Post on 20-Mar-2018
transcript
450mm Metrology and Inspection: The Current State and the Road Ahead
Rand Cottle (CNSE), Nithin Yathapu (GF), Katherine Sieg (Intel)
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
Program Update
• DTM changed from 14nm to <10nm demonstration testing.
• Equipment Performance Metrics (EPM) being updated to included <10nm HVM targets.
• Initial baseline testing shortened to allow for longer CIP.
• DTM schedule shifted from 2013-15 to 2014-16.
New DTM Timeline
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
DTM Schedule Model: Metrology Tools
G450C Test “Levels” vs. Traditional Product Development
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
EPM Revision - Preliminary
Items 14nm < 10nm
Module
FIN/STI Full Pitch 42nm (Fin 10nm) 24nm (Fin 8nm)
Contact CD 20nm (AR 10:1) 10nm (AR 10:1)
Poly Full Pitch* 42nm (Line AR 5:1) 24nm (Line AR 5:1)
BEOL Trench Full Pitch 54nm (Trench AR 3:1) 26nm (Trench AR 3:1)
Generic Items
PWP Particle Size > 30nm > 21nm
PWP Backside Particle 50nm 50nm
Basic Total Variability* < 3.0% < 2.1%
Basic Target Thickness 100% 70%
Basic Geometry to meet pitch shrink 100 50
*Total Variability 𝑇𝑇 = 𝐼𝐼𝐼2 + 𝐼𝑇𝐼2 + 𝐿𝑇𝐿2
Targeted Device Dimension and Basic Generic Rules
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
Test Wafer Strategy • 193i lithography begins virtually in Q3 2014. On-site at G450C Q2
2015. • Immersion lithography will be used for guide patterns. • Directed self assembly (DSA) will be use to construct most of the
<10nm design rule structures. • 100 keV e-beam lithography will be used to patterning requirements
not met by DSA, like programmed defect arrays for inspection sensitivity demonstrations.
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
450mm Metrology Tool Availability Tool Type Status Application
SE/OCD Thickness -operational on-site OCD-Ready to measure
Dielectric or thin metal films thickness and stress
4Pt Probe Operation on-site Sheet resistance 3DAFM Operation on-site Nanotopography, pattern CD
and depth, reference metrology TXRF Operation on-site Metallic contamination XRR/XRF Opaque Film Thickness
Operation on-site Metal thickness, roughness, and density
Overlay 1 tool ready to measure, 1 on-site Q3 2014
litho overlay: DBO and IBO
AMC Analyzer On-site Q3 2014 Outgassing of wafers and carriers, FOUP clean qual
CD-SEM Virtual Q3 2014, On-site Q1 2015
ADI and AEI pattern CD
Advanced Wafer Geometry
Operational Supplier's Site SFQR,ERO, GBIR, nanotopography
450mm Inspection Tool Availability
Tool Type Status Application Macro Inspection Operation on-site Macro defect inspection (blanket and
patterned), front and backside, EBR and bevel etch.
Defect Review SEM Operation on-site Defect imaging and EDS, pattern CD Bare Wafer Particle Inspection
2 tools operational on-site Bare Si and films particle inspection
BF Inspection Supplier's Site Q1 2015 Patterned wafer inspection
Metro and inspection recipes setup and running for a wide range of film stacks, including SiN, a-Si, poly, Oxide (native, thermal and CVD), TiN, Ta, TaN, W, Cu (PVD and ECP), Co, Al, ACL, SiCN, OPL, PR, ULK.
Factory Automation
• SECS/GEM hasn’t changed from 300mm to 450mm
• Most M&I tool running under fully automated MES host control and data collection.
• Remaining M&I tools will be fully automated by Q3 2014.
Measurement Precision vs EPM Targets
Tool Type Measurement Type Current 3σ <10nm EPM 3σ 1.5mm EE Ready?
Bare Wafer Particle Inspection Particle count - 30nm silica spheres ~1% <2% (10nm spheres) yes
Spectroscopic Ellipsometry Dielectric Film Thickness <0.1% <0.1% yes X-ray Fluorescence Metallic Film Thickness <1.5% <0.2% TBD CD-AFM Critical Dimension <1nm TBD TBD 4-Point Probe Sheet Resistance <0.5% TBD TBD
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
Proposed Standards • Edge exclusion reduction from 2mm to 1.5mm
– Gauge studies are being conduction with 1.5mm EE – Process tool DTM data will be collected at 1.5mm EE
• Notchless wafers – Notch to be replaced with 3 sets of laser marked
fiducials on the backside. – First full notchless compatible inspection tool to arrive
Q1 2015. – Retrofitting of current 450mm M&I tools to begin Q1
2015.
Outline • Program Update • Demonstration Testing Method (DTM) • Equipment Performance Metric (EPM) • Test Wafer Strategy • 450mm Metrology Tool Readiness
– Factory Automation – Current Measurement Precision
• Proposed Standards • Summary
Summary
• Twelve 450mm metrology and inspection tools up and running at G450C.
• Four more M&I tools will be installed on-site by Q2 2015.
• Gauge studies are underway for unpatterned wafer M&I.
• Patterned wafer M&I will begin Q4 2014.
Thank You!
Notch Replacement Laser Marks