5G mMIMO Modules with Enhanced Power and Efficiency

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Company Public – NXP, the NXP logo, and NXP secure connections for a smarter world are trademarks of NXP

B.V. All other product or service names are the property of their respective owners. © 2019 NXP B.V.

Marketing Manager EMEA - Radio Power BL

Pascal Massot

5G mMIMO Modules with Enhanced Power and Efficiency

November 2019 | EUF-IND-T3931

COMPANY PUBLIC 1

Focus of this presentation

COMPANY PUBLIC 2COMPANY PUBLIC 2

Agenda

• Introduction to cellular network market

• 5G network RF technology dynamics

• 5G RF Amplifier portfolio

• RF Circuit collection

COMPANY PUBLIC 3

Introduction to cellular network

market

COMPANY PUBLIC 4

Wireless Connectivity Landscape

Ultra-short Range

Short Range

Wide Range

CAT-M1 NB-IoT5G

COMPANY PUBLIC 5

COMPANY PUBLIC 6COMPANY PUBLIC 6

History of Communication Standards

1G-AMPS

1980 – 1990

Voice Only

64 kb/s

2G-GSM

1990 – 2000

Digitized Voice

2 Mb/s

3G-WCDMA

2000 – 2010

Mobile Internet

1 Gb/s

4G-LTE

2010 – 2020

Mobile Broadband

5 Gb/s

5G-NR

2020 –

Man-to-Man Communication Man-to-Internet Communication Everything Connected

COMPANY PUBLIC 7

Explosive Growth in Connected Devices

2015 20182016

25

22

2019

17

15

28

2017 2019 2020 2021

Customers Facing…

• Skyrocketing data rates

• Multiple wireless standards

• Increasing network complexity

• Stringent power requirements

• Worldwide rise in IP traffic

Mobile Broadband for Evolving

Cellular Market

• Reduced energy consumption

• Shrinking equipment footprint

• Reduced time-to-market

Connected Devices vs.

Global Mobile Traffic

# C

on

ne

cte

d D

evic

es (

Bill

ion

s)

Global Mobile Traffic

(Monthly Exabytes)

Source: Ericsson, June 2016

11

20

29

35

53

75

95

COMPANY PUBLIC 8COMPANY PUBLIC 8

Everything Connected Requires a New Communication

Protocol: 5G New Radio (5G-NR)

Ultra-high reliability:

99.9999999%

Ultra-low latency:

Less than 1millisecondUltra-high density

1M nodes / km2

Ultra low complexity:

10s of kbps 5G

Mobile Broadband

Smart Transport

Realtime Virtual Reality

Internet of Things

Massive

Machine

Communication

Data rate: 10s Gbps

Capacity: 10 Tbps / km2

COMPANY PUBLIC 9

5G: Cell Phones and Much MoreL

ow

Po

wer

Wir

ele

ss

2G

/3G

4G

Pre

5G

5G

Critical

MTC:

Latency &

reliability

Connected Cars

Beyond LOS

Ultra low latency

Conventional freq.

Low Power & BW

Mobile

Broad Band

(MBB):

Capacity &

Coverage

LTE Advanced

High BW / CA

Higher diversity

Conventional freq.

Low & high power

eMBB:

Ultra High

Capacity

mmWave

RAN

GBps Data

Last mile connectivity

Ultra high bandwidth

mMIMO

New frequencies

TIME

Massive Machine

Type

Communication

(MTC):

Low Power &

Small signaling

overhead

Internet of Things

Low power & BW

NB-LTE / WiFi / 2G

Conventional freq.

2017-2019 2020-2025

COMPANY PUBLIC 10

5G Network RF

Technology Dynamics

COMPANY PUBLIC 11COMPANY PUBLIC 11

Evolution of the Cellular Base Station

COMPANY PUBLIC 12

Massive MIMO

• Active Antenna Solutions enable a leap in capacity by utilizing between 16 and 64 transmit and receive paths in a single active system.

• TDD-mMIMO systems are leading the way at 2.6 GHz and 3.5 GHz bands but will expand to FDD and other frequencies as well.

• Although system costs are currently higher than traditional RRH, significant throughput improvements justify the investment.

COMPANY PUBLIC 13

mmWave Solutions

• To improve capacity even further, the industry is looking to mmWave frequencies ranging from 24 GHz to 39 GHz, enabling over 1 GHz of bandwidth.

• Beamforming will enable spatial multiplexing for increased spectrum reuse.

• Solutions include Fixed Wireless Access as well as Radio Access Networks.

COMPANY PUBLIC 14

Throughput Evolution

Massive MIMO

• Used in Macro BTS

• Existing spectrum + new bands below 6 GHz

• More data with LTE and existing handsets

• Possible now

• Least expensive option to increase throughput,

even at increased equipment cost

Microwave & Millimeterwave Frequencies

• > 6 GHz on WRC-2019 agenda

• GHz bandwidth has potential to carry a lot of data

• Propagation and building penetration issues force

“small cell” deployments – many of them needed

• Significant increase of throughput – will see use

starting 2020

Today:

LTE

Tomorrow:

mMIMO + LTE

After 2020:

mMIMO + 5G

COMPANY PUBLIC 15

TRX

RFFE

RFFE

RFFE

RFFE

RFFE

RFFE

RFFE

RFFE

Solutions for mmWave

beamforming

Required RF building blocks for a mmWave TDD beamforming system:

− Splitter / combiner network

− TX front end (PA)

− RX front end (LNA)

− TX / RX switch

− Phase shifter

VM

VM

BA

TR TR

LNA

PA

VM

VM

BA

TR TR

LNA

PA

VM

VM

B A

TRTR

LNA

PA

VM

VM

B A

TRTR

LNA

PA

BUS

Example of an integrated 4 channel solution:

COMPANY PUBLIC 16COMPANY PUBLIC 16

Wireless Infrastructure MIMO EvolutionAntenna Diversity Increasing in All Market Sub-segments

2 x 80W 4 x 40W 8 x 15W 32/64 x 2.5W 256 x 200mW

2T120 Mb/s

4T230 Mb/s

8T440 Mb/s

mMIMO2-5 Gb/s

MMW>10 Gb/s

4 x 40W 32x 5W 32/64 x 2.5W 256 x 200mW

4T230 Mb/s

16T1 Gb/s

32T1-2 Gb/s

64T2-5 Gb/s

MMW>10 Gb/s

16x 10W

4G

4G 5G

4G LTE

Wide Area Coverage

LDMOS & GaN

LTE Adv. / 5G

Suburban Coverage

LDMOS, GaN & SiGe

LTE Adv. / 5G

Urban Coverage

LDMOS, GaN & SiGe

LTE Adv. / 5G

Dense Urban Areas

LDMOS, GaN & SiGe

5G – Highest Capacity

Dense Urban Areas

SiGe & GaN

5G

COMPANY PUBLIC 17

5G RF Module Portfolio

COMPANY PUBLIC 18COMPANY PUBLIC 18

NXP’s RF Technology Toolbox

80W

40-60W

10-20W

1-5W

<1 W

LNA SW

LDMOS

48V

GaN

GaN

LDMOS 28V

GaN

and LDMOS

28V

LDMOS 28 V IC

SiGe and RFCMOS

GaAs (HBT, pHEMT)

< 1000MHz 2,0 GHz 2.6 GHz 3.5 GHz 4-10 GHz 10-60 GHz

Existing Spectrum

GaN

and LDMOS

28V

New Spectrum

AV

G P

A P

ow

er

From sub-1GHz to mm-wave;

from mW’s to 10’s of W

COMPANY PUBLIC 19COMPANY PUBLIC 19

Leveraging the Benefits of GaN and LDMOS

GaN Benefits

• Differentiating performance exceeding

LDMOS above 2.5 GHz

• Enables 5G at higher frequencies

• Broadband design

• High efficiency at high frequencies

• Comparable thermal package as LDMOS

• Compact PA design (more power in smaller

package, smaller matching circuitry)

• Wideband CW and Pulse PA applications:

• 200-2600 MHz at 100 W

• S-band 2.7-3.5 GHz at 700 W

LDMOS Benefits

• Competitive performance to 2.7 GHz

• Cost effective PA solutions

• Mature process technology

• High ruggedness up to 65:1 VSWR

• Consistent thermal behavior

• Broadband VHF/UHF below 1 GHz

• Highest power up to 1.5 GHz

• Narrow-band PA applications:

• Cellular bands up to 2.7 GHz

• Avionics/L-band 1.2-1.4 GHz up to 1.5 kW

• S-band 2.7-3.1 GHz at 300 W

COMPANY PUBLIC 20COMPANY PUBLIC 20

NXP Family of Fully-Integrated High Efficiency Power

Amplifiers

• Power levels 2.5 –

5 Watt devices

• Roadmap covering bands

2.3 GHz to 5 GHz

• Easy implementation –

50 Ω input & output

• Pin-compatibility between

all frequency bands and

power levels

• LDMOS – low cost solution

Rx Front-End

Module4x4 mm2 package

PA Module6x10 mm2 package

Pre-Driver Amplifier3x4 mm2 package

Low Cost Small Size21x35 mm2 solution

COMPANY PUBLIC 21COMPANY PUBLIC 21

Block diagram

Tx In

I2C

ENABLE

RX OUT

RF PA

CONTROL

BYPASS

AFRX5G132

AFLP5G35647

BIAS CONTROLLER

AFSC5G35D37

T/R SWITCH

TO ANTENNA

FEEDBACK OUT

BYPASS

TX OUT /

RX IN

CONTROL

DAC0

DAC1

Final stage:

AFSC5G35D37

Driver:

AFLP5G25641

RX Module:

AFRX5G372

COMPANY PUBLIC 22COMPANY PUBLIC 22

Airfast 5G MCM Benefits

Device 10x6 mm2

Solution 15x11 mm2

Time To Market

The ease of use of a 50-ohm, high gain dual-stage PA with integrated Doherty shortens design cycle time

• Eliminates multiple prototype passes

• No compromise on performance

• 50-ohm, pin-compatibility from a MCM PA to another enables reuse for other frequencies / power levels

Manufacturing

A surface mount device, compatible with standard pick and place + reflow, facilitates manufacturing

• Reduces assembly time increasing ROI for manufacturing equipment and reduced need for capital investment

• Eliminates testing redundancies while improving yields

Smaller, lighter active antenna systems

The high integration enables lighter 64T active antenna systems.

• Small size enabled by a 10 x 6 mm package

• 50-ohm in/out with integrated Doherty reduces external component out

COMPANY PUBLIC 23COMPANY PUBLIC 23

Devices

Dual-stage PA• AFSC5G23D37

• AFSC5G26D37

• AFSC5G35D37

• AFSC5G37D37

• AFSC5G35D35 10x6 mm2

LNA + switch• AFRX5G272

• AFRX5G3726.2x6.2 mm2

Pre-driver• AFLP5G25641

• AFLP5G35645

4x3 mm2

Airfast 5G MCM Enablement – Reference Circuits & Reference Designs

Reference DesignReference Circuits

Documentation

(data pack, dxf

drawings) available

from nxp.com

Orderable P/N:

“device#”-EVB (ex: AFSC5G37D37-EVB)

$250 MSRP

Reference Designs

Reference Design:

AFDEV5G-26D37

Reference Design:

AFDEV5G-35D37

More details on

AFDEV5G-26D37

More details on

AFDEV5G-35D37

Orderable Q4 2019

Available now

Orderable Sep 2019

Pre-driver, PA and

LNA together

COMPANY PUBLIC 24COMPANY PUBLIC 24

Part Number Decoder

AFSC5G35D37T2

5G Family

2000 pcs reel

size (MPQ)

NXP’s RF Signature for Cellular

Infrastructure: Airfast

System-in-compact

package

Frequency

band

dBm Avg

Power

Doherty Series

PA Modules:

AFLP5G35645T5Linear Pre-driver Frequency

band

5000 pcs reel

size (MPQ)

Pre-Drivers:

AFRX5G372T4Receiver Frequency

bandGeneration

2500 pcs reel

size (MPQ)Rx Modules:

Back to

portfolio

selection

Back to 5G

portfolio

Introduction

COMPANY PUBLIC 25COMPANY PUBLIC 25

Introducing Airfast 5G MCM Solutions – 28 V LDMOSA

ve

rage

Ou

tpu

t P

ow

er

2300 MHz 2400 MHz 2500 MHz 2600 MHz 2700 MHz ~ 3400 MHz 3500 MHz 3600 MHz 3700 MHz 3800 MHz

AFSC5G23D37 AFSC5G26D37

AFSC5G35D35

AFSC5G35D37 AFSC5G37D37

5 W

37

dB

m

27 dB gain, 38% PAE

2300-2400 MHz

27 dB gain, 38% PAE

2545-2655 MHz

27 dB gain, 36% PAE

3400-3600 MHz

29 dB gain, 38% PAE

3600-3800 MHz

29 dB gain, 38% PAE

3400-3600 MHz

PA MCMs:

Rx Front-end Modules (LNA + switch):

Pre-Driver Amplifiers:

29 d

Bm AFLP5G25641

2300-2700 MHz

AFLP5G35645

3400-3800 MHz

AFRX5G272

2300-2700 MHz

AFRX5G372

3300-4200 MHz

3 W

35 d

Bm

Test conditions: PAE @ 8-8.5 dB OBO

✓ Simple DPD

✓ ACPR < -50 dBc w/ 2x20MHz LTE 7.5dB PAR

COMPANY PUBLIC 26COMPANY PUBLIC 26

mMIMO Power budget

BTS Total Pout (W)

BTS Total Pout (dBm)

MIMO (#)

Antenna Pout (W) Antenna Pout (dBm)

PA avg Pout (W)

PA avg Pout (dBm)

Losses (dB)

320 55 16 20.0 43 32 45 2

240 54 16 15.0 42 24 44 2

200 53 16 12.5 41 20 43 2

320 55 32 10.0 40 16 42 2

240 54 32 7.5 39 12 41 2

200 53 32 6.3 38 10 40 2

160 52 16 10.0 40 16 42 2

100 50 16 6.3 38 10 40 2

320 55 64 5.0 37 8 39 2

240 54 64 3.8 36 6 38 2

200 53 64 3.1 35 5 37 2

160 52 32 5.0 37 8 39 2

100 50 32 3.1 35 5 37 2

3 35 4 0.8 29 1.27 31 2

COMPANY PUBLIC 27COMPANY PUBLIC 27

AFSC5G37D37

Typical line-up:

• 3600-3800 MHz

• 37 dBm / 5 W avg (45.6 dBm / 36 W peak)

• 28 V LDMOS• 50-ohm in/out, dual-stage MCM with Doherty combiner

• 38% efficiency @ 8 dB OBO

• 29 dB gain

• 10x6 mm2 over-molded plastic package

Comments:

• Designed for 240 W, 64T mMIMO active antennas

for the B48

• In production

• Reference circuit: AFSC5G37D37-EVB available

Reference Circuit:

Pout = 5 W avg., VDD = 29 V, 1x 20 MHz LTE, Input PAR 8 dB

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3600 MHz 29.5 -32.4 39%

3700 MHz 29.7 -33.6 38%

3800 MHz 29.9 -34.4 38%

Final stage:

AFSC5G37D37

Driver:

AFLP5G35645

RX Module:

AFRX5G372

COMPANY PUBLIC 28COMPANY PUBLIC 28

AFSC5G35D37

Typical line-up:

• 3400-3600 MHz

• 37 dBm / 5 W avg (45.6 dBm / 36 W peak)

• 28 V LDMOS• 50-ohm in/out, dual-stage MCM with Doherty combiner

• 39% efficiency @ 8 dB OBO

• 29 dB gain

• 10x6 mm2 over-molded plastic package

Comments:

• Designed for 240 W, 64T mMIMO active antennas

for the B42

• In production

• Reference circuit: AFSC5G35D37-EVB available

Reference Circuit:

Pout = 5 W avg., VDD = 29 V, 1x 20 MHz LTE, Input PAR 8 dB

Final stage:

AFSC5G35D37

Driver:

AFLP5G35645

RX Module:

AFRX5G372

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3400 MHz 29.2 -31.4 39%

3500 MHz 29.3 -32.8 39%

3600 MHz 29.4 -31.0 39%

COMPANY PUBLIC 29COMPANY PUBLIC 29

AFSC5G35D35

Typical line-up:

• 3400-3600 MHz

• 35 dBm / 3 W avg (43 dBm / 20 W peak)

• 28 V LDMOS• 50-ohm in/out, dual-stage MCM with Doherty combiner

• 37% efficiency @ 8 dB OBO

• 25 dB gain

• 10x6 mm2 over-molded plastic package

Comments:

• Designed for 240 W, 64T mMIMO active antennas

for the B42

• In production

• Reference circuit: AFSC5G35D35-EVB available

Reference Circuit:

Pout = 3 W avg., VDD = 24 V, 1x 20 MHz LTE, Input PAR 8 dB

Final stage:

AFSC5G35D35

Driver:

AFLP5G35645

RX Module:

AFRX5G372

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3400 MHz 25.3 -27.6 37%

3500 MHz 24.9 -30.8 37%

3600 MHz 24.8 -32.9 35%

COMPANY PUBLIC 30COMPANY PUBLIC 30

AFSC5G26D37

Typical line-up:

• 2496-2690 MHz

• 37 dBm / 5 W avg (45.7 dBm / 37 W peak)

• 28 V LDMOS• 50-ohm in/out, dual-stage MCM with Doherty combiner

• 40% efficiency @ 8 dB OBO

• 27 dB gain

• 10x6 mm2 over-molded plastic package

Comments:

• Designed for 200 W, 64T mMIMO active antennas

for the B41

• In production

• Reference circuit: AFSC5G26D37-EVB available

Reference Circuit:

Pout = 5 W avg., VDD = 28 V, 1x 20 MHz LTE, Input PAR 8 dB

Final stage:

AFSC5G26D37

Driver:

AFLP5G25641

RX Module:

AFRX5G272

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

2575 MHz 27.4 –27.8 40%

2600 MHz 27.2 –27.9 40%

2625 MHz 27.1 –27.7 40%

COMPANY PUBLIC 31COMPANY PUBLIC 31

AFSC5G23D37

Typical line-up:

• 2300-2400 MHz

• 37 dBm / 5 W avg (45.7 dBm / 37 W peak)

• 28 V LDMOS• 50-ohm in/out, dual-stage MCM with Doherty combiner

• 38% efficiency @ 8 dB OBO

• 27 dB gain

• 10x6 mm2 over-molded plastic package

Comments:

• Designed for 240 W, 64T mMIMO active antennas

for the B40

• In production

• Reference circuit: AFSC5G23D37-EVB available

Reference Circuit:

Pout = 5 W avg., VDD = 26 V, 1x 20 MHz LTE, Input PAR 8 dB

Final stage:

AFSC5G23D37

Driver:

AFLP5G25641

RX Module:

AFRX5G272

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

2575 MHz 27.4 –27.8 40%

2600 MHz 27.2 –27.9 40%

2625 MHz 27.1 –27.7 40%

COMPANY PUBLIC 32COMPANY PUBLIC 32

AFLP5G35645

Functional Block Diagram: Typical line-up:

• 3400-3800 MHz pre-driver

• 29 dBm avg (25 dBm @ 3.3 V)

• 5 V GaAs• 50-ohm in/out, 3-stage MCM with 1.8 V logic control pin for bias

enable/disable TDD operation.

• Very low power consumption: 158 mW @ 5 V

(114 mW @ 3.3 V)

• 4x3 mm2 plastic package

Comments:

• Pre-driver for AFSC5G37D37, 35D37, 35D35

• In development, qualification planned end Q4 2019

MATCH

CONTROLLER

GND

GND

GND GND GND GNDVCC2

GND EN VCC1 GNDLLS

RFIN

GND

GND

RFOUT

Final stage:

AFSC5G35D37

Driver:

AFLP5G35645

RX Module:

AFRX5G372

COMPANY PUBLIC 33COMPANY PUBLIC 33

AFLP5G25641

Functional Block Diagram: Typical line-up:

• 2300-2700 MHz pre-driver

• 29 dBm avg (25 dBm @ 3.3 V)

• 5 V GaAs• 50-ohm in/out, 3-stage MCM with 1.8 V logic control pin for bias

enable/disable TDD operation.

• Very low power consumption: 158 mW @ 5 V

(114 mW @ 3.3 V)

• 4x3 mm2 plastic package

Comments:

• Pre-driver for AFSC5G23D37, 26D37

• In development, qualification planned end Q4 2019

MATCH

CONTROLLER

GND

GND

GND GND GND GNDVCC2

GND EN VCC1 GNDLLS

RFIN

GND

GND

RFOUT

Final stage:

AFSC5G26D37

Driver:

AFLP5G25641

RX Module:

AFRX5G272

COMPANY PUBLIC 34COMPANY PUBLIC 34

AFRX5G372

Functional Block Diagram: Typical line-up:

Comments:

• Rx for AFSC5G37D37, 35D37, 35D35

• In development, qualification planned in Q1 2020

• Support circuitry to work from a 5 V supply and a 1.8

logic-level T/R control

• Support Tx and Rx modes, which are controlled by

T/R logic signaling

• 3300-5000 MHz

• 5 V GaAs LNA + switch

• Noise Figure: 1.3 dB • Gain 33dB

• 50-ohm in/out

• 6.2x6.2 mm2 plastic package

PA

Controller

LNA LNARx Tx

Tx / RxDigital control (1.8 V JEDEC)

VDD

(5 V)

6.2 x 6.2 LGA

P in switch

Final stage:

AFSC5G35D37

Driver:

AFLP5G35645

RX Module:

AFRX5G372

COMPANY PUBLIC 35COMPANY PUBLIC 35

AFRX5G272

Functional Block Diagram: Typical line-up:

• 2300-2700 MHz LNA + switch

• Noise Figure: 1.3 dB

• 5 V GaAs• Gain 33dB

• 50-ohm in/out

• 6.2x6.2 mm2 plastic package

Comments:

• Rx for AFSC5G23D37, 26D37

• In development, qualification planned in Q1 2020

• Support circuitry to work from a 5 V supply and a 1.8

logic-level T/R control

• Support Tx and Rx modes, which are controlled by

T/R logic signaling

PA

Controller

LNA LNARx Tx

Tx / RxDigital control (1.8 V JEDEC)

VDD

(5 V)

6.2 x 6.2 LGA

P in switch

Final stage:

AFSC5G26D37

Driver:

AFLP5G25641

RX Module:

AFRX5G272

COMPANY PUBLIC 36COMPANY PUBLIC 36

AFDEV5G-35D37 Reference Design

Functional Block Diagram: Typical line-up:

• 3400-3600 MHz

• 30 V LDMOS

• 5 W AVG, 37 dBm• Integrated RF design

• 50 ohm input/output

• In development, orderable Q1 2020

Design Size:

20.95 mm 38.35 mm

57.15 mm

34.52 mm

Total height including

cover 9.7 mm

Tx In

I2C

ENABLE

RX OUT

RF PA

CONTROL

BYPASS

AFRX5G372

AFLP5G35647

BIAS CONTROLLER

AFSC5G35D37

T/R SWITCH

TO ANTENNA

FEEDBACK OUT

BYPASS

TX OUT /

RX IN

CONTROL

DAC0

DAC1

Final stage:

AFSC5G35D37

Driver:

AFLP5G35645

RX Module:

AFRX5G372

COMPANY PUBLIC 37COMPANY PUBLIC 37

AFDEV5G-26D37 Reference Design

Functional Block Diagram: Typical line-up:

• 2496-2690 MHz

• 30 V LDMOS

• 5 W AVG, 37 dBm• Integrated RF design

• 50 ohm input/output

• In development, orderable Q1 2020

Design Size:

20.95 mm 38.35 mm

57.15 mm

34.52 mm

Total height including

cover 9.7 mm

Tx In

I2C

ENABLE

RX OUT

RF PA

CONTROL

BYPASS

AFRX5G272

AFLP5G25641

BIAS CONTROLLER

AFSC5G26D37

T/R SWITCH

TO ANTENNA

FEEDBACK OUT

BYPASS

TX OUT /

RX IN

CONTROL

DAC0

DAC1

Final stage:

AFSC5G26D37

Driver:

AFLP5G25641

RX Module:

AFRX5G272

COMPANY PUBLIC 38

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COMPANY PUBLIC 39

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COMPANY PUBLIC 40

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COMPANY PUBLIC 41COMPANY PUBLIC 41

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COMPANY PUBLIC 42

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COMPANY PUBLIC 44

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COMPANY PUBLIC 45

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NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. © 2019 NXP B.V.