Post on 21-Jun-2019
transcript
Circuit Description
Samsung Electronics 13-1
13. Circuit Description13-1 Circuit Key Point13-1-1 Pin configuration of “Face-down” QIP versions
13-1-2 UOC3(TDA120XX) Pin Description
1
1
100
0
1
laitinI laitinI
)uneM ,nwoD emuloV ,pU emuloV ,nwoD lennahC ,pu lennahC(1 yeK lenaP-niarD nepO3.3P1yeKlenaPp51
troP potS suB-niarD nepO2.3PpotSsuBp41
DI 2tracS-yaR-X kcaJ ACR-niarD nepO1.3P2tracSp31
DI 1tracS-- noitpO ACR(W/S retliF waS dnuoS M : dnuoS ,woL )hgiHniarD nepO0.3P1tracSp21
nO etuM dnuoS : hgiH- ffO etuM dnuoS : woL-lluP hsuP1.2PetuMdnuoSp11
nocomeR ,edoMyBdnatS(deL-lluP hsuP0.2PDELp01ataD suB C2I-lluP hsuP7.1PADSp8kcolC suB C2I-lluP hsuP6.1PLCSp7
3.1P
1.1P
0.1P
5.0P
0.0P
retsigeR retsigeR
lluP hsuP
lluP hsuP
lluP hsuP
niarD nepO
lluP hsuP
epyT troP epyT troP
nO rewoP : hgiH- ffO rewoP : woL-rewoPp6
)woL : 85.3CSTN ,hgiH : LAP(W/S LAP/CSTN-- WCretliFwaSp5
lioC gnissuageD-liocDp4
RInocomeR-RIp2
tliT-tliTp15
( ( mociM mociM )46 ~ 45 ,11 ~ 1 niP )46 ~ 45 ,11 ~ 1 niPemaN emaNniP niPoNoN
1
1
100
0
1
laitinI laitinI
-
)
retsigeR retsigeR epyT troP epyT troP
- )woL : L ,hgiH : 'L(W/S waS dnuoS 'LL /
( ( noitpircseD noitpircseD noitpircseD notpircseD mociM mociM )46 ~ 45 ,11 ~ 1 niP )46 ~ 45 ,11 ~ 1 niPemaN emaNniP niPoNoN
Europe
China :
Circuit Description
13-2 Samsung Electronics
13-1-3 Control System Features
* 80C51 micro-controller core standard instruction set and timing* 0.4883 ms machine cycle (6 clock cycles with 12.288 MHz derived from an xtal frequency of 24.576MHz)* maximum 256k x 8-bit program ROM* maximum of 8k x 8-bit auxiliary RAM* auxiliary RAM page pointer* 12-level interrupt controller for individual enable/disable with two level priority* stand-by, idle and power-down modes* watchdog timer* two 16-bit timer/counters* additional 24-bit timer (16-bit timer with 8-bit Pre-scaler)* 16-bit data pointer* five 6-bit pulse width modulator (PWM) outputs for control of TV analogue signals.* one 14-bit PWM for voltage synthesis tuning control.* 8-bit ADC with 4 multiplexed inputs.* remote control pre-processor (RCP).* I2C byte level bus interface.* universal asynchronous receiver transmitter (UART)* 24 General I/O.
13-1-4 Vertical Circuit (LA78045)
rof lortnoc niag kcab deeF evah osla ezis erutcip lacitrev
tfihs lacitrev rotcennoc emos
rof lortnoc niag kcab deeF evah osla ezis erutcip lacitrev
tfihs lacitrev rotcennoc emos
Circuit Description
Samsung Electronics 13-3
13-1-5 Power IC (STR-W6750F)
egatlov wol tupni CA
Circuit Description
13-4 Samsung Electronics
13-1-6 TDA6109JF
Circuit Description
Samsung Electronics 13-5
13-1-7 CRT Drive
13-1-8 Spot Killer
Circuit Description
13-6 Samsung Electronics
13-1-9 Picture In Picture
Circuit Description
Samsung Electronics 13-7
13-1-10 X-Ray Protection
tnioP tseT noitcetorP
egatloV retaeH morF
noitcetorP yaR-X”OTHE“ COU oT
47# niP
13-8 Samsung Electronics
MEMO