Post on 15-Apr-2018
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PXT8550DISCRETE SEMICONDUCTORSR
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description Designed for general purpose amplifier applications.
Pinning1 = Base
3 = Emitter2 = Collector
Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -1500 mATotal Power Dissipation PD 300 mWJunction Temperature TJ +150 oCStorage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
Rank C D E
Classification of hFE
Characteristic Symbol Min Typ Max Unit Test ConditionsCollector-Base Breakdown Volatge BVCBO -40 - - V ICollector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-0.1mA,IB=0Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA,IC=0Collector Cutoff Current ICBO - - -1 µA VCB=-40V,IE=0Emitter Cutoff Current IEBO - - -0.1 µA VEB=-5V,IC=0Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.5 V IC=-800mA, IB=-80mABase-Emitter Saturation Voltage(1) VBE(sat) - - -1.2 V IC=-800mA, IB=-80mADC Current Gain(1) hFE 120 - 400 - IC=-100mA, VCE=-1VTransition Frequency fT 100 - - MHz IC=-50mA, VCE=-10V, f=30MHz
Electrical Characteristics(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% MARKING:Y2
Range 120~200 200-350 300-400
C=-100µA, IE=0
SOT-89
Dimensions in inches and (millimeters)
.063(1.60)
.055(1.40).066(1.70).059(1.50)
.167(4.25)
.159(4.05)
.016(0.41)
.014(0.35).120(3.04).117(2.96)
.181(4.60)
.173(4.40)
.060(1.52)
.058(1.48)
.020(0.51)
.014(0.36)
.102(2.60)
.095(2.40)
1 2 3
Static Characteristics
Collector-Emitter Voltage ( V)
Col
lect
or C
urre
nt, I
C(A
)
-0 -0.4 -0.8 -1.2 -1.6 -2.00
-0.1
-0.2
-0.3
-0.4
-0.5
IB=-0.5mA
IB=-1.0mA
IB=-1.5mA
IB=-2.0mA
IB=-2.5mA
IB=-3.0mA
DC Current Gain
Collector Current, IC (mA)
DC
Cur
rent
Gai
n, h
FE
VCE=-1V
-10-1 -100 -101 -102 -103100
101
102
103
Collector Current, IC (mA)
Sat
urat
ion
Vol
tage
(m
V)
Saturation Voltage
VCE(SAT)
VBE(SAT)
IC=10*IB
-10-1 -100 -101 -102 -103-101
-102
-103
-104
PXT8550Electrical Characteristic Curves
R
DC COMPONENTS CO., LTD.
Current Gain-Bandwidth Product
Collector Current, IC (mA)
Cu
rren
t Gai
n-B
andw
idth
Pro
duc
t,f T
(MH
z)
VCE=-10V
-100 -101 -102 -103100
101
102
103