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transcript
EMC Test Specification for BroadR-Reach® Common
Mode Chokes Version 2.0
Author & Company Dr. Bernd Körber, FTZ Zwickau
Title EMC Test Specification for BroadR-Reach® Common Mode Chokes
Version 2.0
Date December 19, 2014
Status Final version
Restriction Level Public
This measurement specification shall be used as a standardized common scale for EMC evaluation of common mode chokes for 100 Mbit/s BroadR-Reach® in automotive applications.
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Version Control of Document
Version Author Description Date
0.1 B. Körber Initial version 10/23/12
0.2 B. Körber 2cd draft version
discussed changes from telco OA TC1
changed to new OA document template
section “Attenuation at ESD discharge“ removed
recommended limits added in Appendix
07/08/13
1.0 B. Körber 3rd draft version
software configuration for test Transceiver updated
recommended limits for S-Parameter added
recommended limits for RF immunity and RF emission changed
24/09/13
1.1 B. Körber Disclaimer added 10/04/13
1.2 B. Körber Limit return loss changed Change of reference transceiver
09/14/14
1.3 B. Körber Definition for optimized BIN changed 10/02/14
2.0 B. Körber Numbering of version changed 12/19/14
Restriction level history of Document
Version Restriction Level Description Date
0.1 Open internal only 10/23/12
0.2 Open internal only 07/08/13
1.0 Open internal only 24/09/13
1.1 Open internal only 10/04/13
1.2 Public 09/14/14
1.3 Public 10/02/14
2.0 Public 12/19/14
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Disclaimer
The OPEN Specifications (including any part thereof) are intended to be used as an information source to
enable to manufacture and test products which comply with the OPEN Specification.
All OPEN Specifications are provided on “as is” basis and all warranties, either explicit or implied, are
excluded unless mandatory under law. Accordingly, the OPEN Alliance Members who have contributed to
the OPEN Specifications make no representations or warranties with regard to the OPEN Specifications or
the information (including any software) contained therein, including any warranties of merchantability,
fitness for purpose, or absence of third party rights and make no representations as to the accuracy or
completeness of the OPEN Specifications or any information contained therein.
The OPEN Alliance Members who have contributed to the OPEN Specifications will not be liable for any
losses, costs, expenses or damages arising in any way out of use or reliance upon any OPEN Specification
or any information therein. Nothing in this document operates to limit or exclude any liability for fraud or
any other liability which is not permitted to be excluded or limited by operation of law.
The material contained in OPEN Specifications is protected by copyright and may be subject to other types
of Intellectual Property Rights. OPEN Specifications (or any part thereof) shall be distributed only among
those bound by the confidentiality defined for the OPEN Specification and as announced in the OPEN
Specification documents.
The distribution of OPEN Specifications shall not operate as an assignment or license to any recipient of
any OPEN Specification of any patents, registered designs, unregistered designs, trademarks, trade names
or other rights as may subsist in or be contained in or reproduced in any OPEN Specification. The
commercial exploitation of the material in this document may require such a license, and any and all
liability arising out of use without such a license is excluded.
OPEN Specification documents may be reproduced in electronic or paper form or utilized in order to
achieve the Scope only. Reproduction or utilization for any other purposes as well as any modification of
the Specification document, in any form or by any means, electronic or mechanical, including
photocopying and microfilm, is explicitly excluded.
Without prejudice to the foregoing, the OPEN Alliance Specifications have been developed for automotive
applications only. They have neither been developed, nor tested for non-automotive applications.
OPEN Alliance reserves the right to withdraw, modify, or replace any OPEN Specification at any time,
without notice.
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Contents 1 Introduction .......................................................................................................................................... 5
1.1 Scope ............................................................................................................................................. 5
1.2 References .................................................................................................................................... 5
1.3 List of abbreviations and definitions ............................................................................................. 6
2 Required Tests ...................................................................................................................................... 7
2.1 General .......................................................................................................................................... 7
2.2 Mixed mode S-Parameter measurement ..................................................................................... 8
2.2.1 Test setup .............................................................................................................................. 8
2.2.2 Test procedure and parameters ........................................................................................... 9
2.3 TDR measurement of differential mode impedance .................................................................. 11
2.3.1 Test setup ............................................................................................................................ 11
2.3.2 Test procedure and parameters ......................................................................................... 12
2.4 Damage from ESD ....................................................................................................................... 13
2.4.1 Test setup ............................................................................................................................ 13
2.4.2 Test procedure and parameters ......................................................................................... 14
2.5 Common test conditions for tests in combination with a BroadR-Reach® transceiver .............. 15
2.6 Increase in RF immunity of interface network ............................................................................ 16
2.6.1 Test setup ............................................................................................................................ 16
2.6.2 Test procedure and parameters ......................................................................................... 17
2.7 Decrease in RF emission of interface network ........................................................................... 18
2.7.1 Test setup ............................................................................................................................ 18
2.7.3 Test procedure and parameters ......................................................................................... 19
Appendix A - Test circuit boards ................................................................................................................. 20
A.1 Example for test fixture S-Parameter measurement .................................................................. 20
Appendix B – Recommended limits for tests .............................................................................................. 21
B.1 S-Parameter measurements ....................................................................................................... 21
B.2 Damage from ESD ....................................................................................................................... 23
B.3 Increase in RF immunity of interface network ............................................................................ 23
B.4 Decrease in RF emission of interface network ........................................................................... 24
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1 Introduction
1.1 Scope
This measurement specification shall be used as a standardized common scale for EMC evaluation of
common mode chokes (CMCs) intended to use with 100 Mbit/s BroadR-Reach® in automotive applications
according to [OPEN1]. It contains recommended limits. The final judgment of the tested device is left to
the customer.
Several tests are based on [OPEN2]. For these tests all definitions of [OPEN2] are valid.
This specification is not applicable for devices that are intended for use in Power over Data Line
applications.
This instruction includes test procedures and test setups concerning:
Mixed mode S-Parameter measurement
TDR measurement of differential mode impedance
Test of damage from ESD
Test the increase in RF immunity of a defined BroadR-Reach® interface network
Measuring the decrease in RF emission of a defined BroadR-Reach® interface network.
1.2 References
[OPEN1] Broadcom / OPEN Alliance BroadR-Reach® (OABR) Physical Layer Transceiver Specification For Automotive Applications, Version 3.2
[OPEN2] OPEN ALLIANCE: EMC Test Specification for BroadR-Reach® Transceivers, Version 1.3
[IEC1] IEC 61967-1, Integrated circuits, Measurement of electromagnetic emissions, 150 kHz to 1 GHz – Part 1: General and definitions
[IEC2] IEC 61967-4, Integrated circuits, Measurement of electromagnetic emissions, 150 kHz to 1 GHz – Part 4: Measurement of conducted emissions – 1 Ω/150 Ω direct coupling method
[IEC3] IEC 62132-4, Integrated circuits, Measurement of electromagnetic immunity, 150 kHz to 1 GHz – Part 4: Direct RF power injection method
[IEC4] IEC 61000-4-2, Electromagnetic compatibility, Part 4-2: Testing and measurement techniques – Electrostatic discharge immunity test
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1.3 List of abbreviations and definitions
AM Amplitude Modulation
BIN MDI Test Network
CDMR Common to Differential Mode Rejection, common mode single ended measured
CMC Common Mode Choke
CMR Common Mode Rejection
CW Continuous Wave
DCMR Differential to Common Mode Rejection, common mode single ended measured
DPI Direct Power Injection
ESD Electro Static Discharge
IL Insertion Loss
PM Pulse Modulation
LPF Low Pass Filter
RF Radio Frequency
RL Return Loss
S-Parameter Scattering Parameter
TDR Time domain reflection
VNA Vector Network Analyzer
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2 Required Tests
2.1 General
For evaluation of EMC behavior of the CMC two groups of tests are defined:
1. Passive component tests:
Mixed mode S-Parameter
TDR
Damage from ESD
2. Tests in combination with a BroadR-Reach® transceiver:
Test the increase in RF immunity
Measuring the decrease in RF emission
Prior to performing any TDR, ESD and RF tests, the S-Parameter measurements shall be performed on a
minimum of 10 samples. Based on these results, 3 groups of 2 samples each shall be selected and used
for the remaining tests. The groups are:
best case sample
worst case sample
typical sample.
The main criteria for selection of CMC into groups are the S-Parameter Sdd11 and Ssd21.
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2.2 Mixed mode S-Parameter measurement
2.2.1 Test setup
For measuring the mixed mode S-Parameters a 4-port VNA in combination with a special test fixture
(adapter test board) shall be used. The test fixture has to be included into the test setup during calibration
of VNA test setup. The calibration points are defined to the pads of the CMC at the test fixture board.
VNA
Test fixture
Network analyzer
DUT 1 Calibration
points
1
1
Figure 2-1: Test setup for S-Parameter measurements
Test equipment requirements:
Network analyzer: 4-port vector network analyzer
f = 0.3 - 1000 MHz (in minimum)
Test fixture: according to Appendix A
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2.2.2 Test procedure and parameters
The required measurements are defined in Table 2-1.
Parameter Description
Frequency range: 300 kHz to 1 GHz
S-Parameter per single
path:
Sdd11 (RL), log. Magnitude in dB / transceiver side
Sdd22 (RL), log. Magnitude in dB / connector side
Sdd21 (IL), log. Magnitude in dB / transceiver side
Scc21 (CMR), log. Magnitude in dB / transceiver side
Ssd21 (DCMR), log. Magnitude in dB / transceiver side
Ssd12 (DCMR), log. Magnitude in dB / connector side
Sds21 (CDMR), log. Magnitude in dB / transceiver side
Sds12 (CDMR), log. Magnitude in dB / connector side
VNA measurement circuit: Port definitions:
Mixed mode logic port 1: physical port 1 and port 2 / transceiver side
Mixed mode logic port 2: physical port 3 and port 4 / connector side
Pin 1 of CMC is placed on transceiver side (logic port 1)
Sdd11, Sdd22, Sdd21, Scc21 measurement:
50 Ω input impedance at each measurement port
VNA Port 1
(50 Ohm)
VNA Port 2
(50 Ohm)
DUT
VNA Port 3
(50 Ohm)
VNA Port 4
(50 Ohm)
1
Ssd21 measurement:
differential mode input: 50 Ω impedance each
common mode output: single ended network with symmetrical
network:
Single ended VNA Port 3
(50 Ohm)
75
50
50
VNA Port 1
(50 Ohm)
VNA Port 2
(50 Ohm)
DUT
1
R = (2 x 50 ) +75
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Note: The accuracy of resistor values should by 1 %. The difference
between matching resistors should be 0.1 %.
For Ssd12 measurement the terminal orientation of the CMC must
be flipped at the test board.
Sds12 measurement:
common mode input: single ended network with symmetrical
network:
Single ended VNA Port 3
(50 Ohm)
75
50
50
VNA Port 1
(50 Ohm)
VNA Port 2
(50 Ohm)
DUT
1
R = 75 + (2 x 50 )
Note: The accuracy of resistor values should by 1 %. The difference
between matching resistors should be 0.1 %.
differential mode output: 50 Ω impedance each
For Sds21 measurement the terminal orientation of the CMC must
be flipped at the test board.
Table 2-1: Test parameters for S- Parameter measurements
The measurements shall be performed and documented according the scheme given in Table 2-2.
Test S- Parameter Sample
S1 Sdd11 (RL)
10 samples each
S2 Sdd22 (RL)
S3 Sdd21 (IL)
S4 Scc21 (CMR)
S5 Ssd21 (DCMR)
S6 Ssd12 (DCMR)
S7 Sds21 (CDMR)
S8 Sds12 (CDMR)
Table 2-2: Required S-Parameter measurements
For each test case the results for all 10 samples has to be documented as diagram in the test report.
Recommended limits for evaluation are given in Appendix B.1.
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2.3 TDR measurement of differential mode impedance
2.3.1 Test setup
For measuring the differential mode impedance of the CMC a two-channel TDR test equipment in
combination with a special test fixture (adapter test board) shall be used.
Test fixture
TDR test equipment
DUT
Figure 2-2: Test setup for TDR measurements
Test equipment requirements:
TDR measurement
system:
Type: 2 channel differential mode
System impedance: 50 single ended / 100 differential mode
Rise time: 25 ps internal ( 100 ps at test fixture)
Test fixture: Use test fixture from 4 port S-Parameter measurements
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2.3.2 Test procedure and parameters
The required measurements are defined in Table 2-3 and should be done on one sample. This sample
should be a typical sample, selected by S-Parameter measurements according to section 2.2.
Parameter Description
TDR measurement circuit: Definition:
Pin 1 of CMC is placed on the transceiver side (TDR measurement port)
TDR Port 1
(50 Ohm)
TDR Port 2
(50 Ohm)
DUT
Termination to GND
(open/50 Ohm)
Termination to GND
(open/50 Ohm)
1
Note: The TDR shall be deskewed at the CMC terminals.
Table 2-3: Test parameters for TDR measurements
The measurements shall be performed and documented according the scheme given in Table 2-4.
Test Parameter Sample
T1 Differential mode impedance 1 typical sample
Table 2-4: Required TDR measurements
There is no recommendation for limit. This test is only for information purpose and can be used for
additional interpretation of results of S-Parameter measurements.
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2.4 Damage from ESD
2.4.1 Test setup
The setup given in Figure 2-3 shall be used for testing the ESD robustness of CMC. This test setup is based
on definitions of [OPEN2], section ESD tests.
ESD Test board
GND Discharge points DP1, DP2
Ground plane ESD Test board
Connection point Ground plane
Test generator with contact discharge module
ESD Simulator
Ground reverse line Test generator
connection loads to Ground plane ESD Test board
Ground plane (minimal 0.5 x 0.5 m)
ESD Test board
fixture
Surface connection ESD Test board to Test board support
Surface connection Test board fixture to ground plane
R1
R2
Load resistors Common mode choke
Figure 2-3: Test setup for ESD damage tests
The ground plane with a minimum size of 0.5 x 0.5 m builds the reference ground plane for the ESD Test
setup and must be connected with the electrical grounding system of the test laboratory. The ESD Test
generator ground cable shall be connected to this reference plane. The test board fixture realizes the
positioning of the ESD Test board and the electrical connection of the ESD Test board ground plane with
the reference ground plane. This connection must have low impedance (R < 25 m) and should be built
by a surface contact.
During testing the tip of the ESD Test generator discharge module shall be directly contacted with one of
the discharge pads DP1 or DP2 of the ESD test board. For this purpose, the discharge points DP 1 and DP2
are implemented as rounded vias in the layout of the ESD test board and are directly connected by a trace
15 (-0 +5) mm with the respective pin of the CMC.
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Test Equipment Requirements:
ESD test generator: according to [IEC4]; contact discharge module with
discharge capacitor 150 pF and discharge resistor
330
ESD test board: according to [OPEN2]
2.4.2 Test procedure and parameters
The required tests are defined in Table 2-5 and should be done on one sample. This sample should be a
typical sample, selected by S-Parameter measurements according to section 2.2.
Parameter Description
Coupling of ESD: direct galvanic coupled using a Contact Discharge Module according to
[IEC4] (C = 150 pF, R = 330 )
Test circuit:
Note: All resistors shall be from the SMD design 1206 or 0805 with a
maximum tolerance of 1 %. The exact type ID and manufacturer of the used
resistors must be documented in the test report.
ESD test voltage: 8 kV
Number of discharges: 10 per polarity
Time between discharges: 5 s
Damage evaluation
criteria:
Maximum deviation of 5 % from the original value after performing
the tests:
Series resistance of line 1 and 2: RS1, RS2
Isolation resistance line 1 to line 2: RISO )1
Inductivity line 1 and 2: LS1, LS2 )2
)1 Measurement at +100 V DC test voltage for 2 s )2 Measurement at f = 1 MHz
Test procedure: 1. Apply ESD discharges at DP1 ( 8 kV, 10 per polarity, 5 s delay)
2. Apply ESD discharges at DP2 ( 8 kV, 10 per polarity, 5 s delay)
3. Evaluate damage using damage evaluation criteria
Table 2-5: Test parameters for ESD damage tests
The tests shall be performed and documented according the scheme given in Table 2-6.
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Test Discharge points
Comment Sample
E1 DP1 Line 1 one typical
sample each E2 DP2 Line 2
Table 2-6: Required ESD tests for damage
The CMC must withstand the ESD discharge without damage according to the damage evaluation criteria.
Recommended limits are given in Appendix B.3.
2.5 Common test conditions for tests in combination with a BroadR-Reach®
transceiver For all test of EMC behavior of the CMC in combination with a BroadR-Reach® transceiver according to
[OPEN1] an Ethernet test network consisting of two bus nodes according to [OPEN2] has to be set up. It
shall be done using two different MDI test networks (BIN) - according to Figure 2-4 for BroadR-Reach®
interface with standard MDI interface network and according to Figure 2-5 for BroadR-Reach interface
with optimized MDI interface network.
Figure 2-4: Test circuit diagram for DPI tests for BroadR-Reach® interface with standard MDI interface network
Figure 2-5: Test circuit diagram for DPI tests for BroadR-Reach® interface with optimized MDI interface network
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2.6 Increase in RF immunity of interface network
2.6.1 Test setup
The increase in RF immunity of interface network caused by the CMC shall be measured using the DPI test
method according to [IEC3] and [OPEN2]. The general test setup is illustrated in Figure 2-6. The forward
RF power shall be used for test level definition.
Monitoring
DSO
Test board External voltage supply
Testing: MDI RF1
RF1
Host µC board RF TC board
RF Generation
Power meter
RF Generator
RF Amplifier
Control PC
Figure 2-6: Test setup for DPI tests
Test equipment requirements:
RF Generator: f = 1 - 1000 MHz, including amplitude and pulse modulation
RF Amplifier: PCW 10 W
RF Power meter with
directional coupler:
f = 1 - 1000 MHz
Test board: according to [OPEN2]
DSO
External voltage supply
Control PC
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2.6.2 Test procedure and parameters
The tests are based on the definitions of [OPEN2] for the DPI tests with the additional definitions given in
Table 2-7.
Parameter Description
Modulation: AM 80 %, 1 kHz / PM 217Hz, ton 577µs
Maximum test power: 39 dBm
Transceiver type and
configuration:
The used transceiver must be in line with definitions of [OPEN1] and
[OPEN2]. The used configuration for the transceiver should be in-line
with tests according to [OPEN2].
Optimized MDI test
network configuration:
Should be in-line with tests of used transceiver according to [OPEN2].
Communication test
signal:
according to [OPEN2]
Failure validation: Sum error according to [OPEN2]
Table 2-7: Test parameters for DPI tests
The tests shall be performed and documented according the scheme given in Table 2-8.
Test MDI test network (BIN)
Type of coupling on MDI pins
Coupling resistors
Sample
R1
[]
R2
[]
D1
standard
symmetric 120 120
Set of 2 samples of each group (best case /
typical / worst case)
D2 + 2.5 % unbalanced 121 118
D3 - 2.5 % unbalanced 118 121
D4
optimized
symmetric 120 120
D5 + 2.5 % unbalanced 121 118
D6 - 2.5 % unbalanced 118 121
Table 2-8: Required DPI tests
For each test case an immunity threshold curve with the forward power as the parameter has to be carried
out and presented in the test report in a diagram. Recommended limits are given in Appendix B.3.
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2.7 Decrease in RF emission of interface network
2.7.1 Test setup
The decrease in RF emission of interface network caused by the CMC shall be measured by conducted
emission measurement method (150 Ohm test method) according to [IEC2] and [OPEN2]. A general test
setup is illustrated in Figure 2-7.
Monitoring
DSO
RF Analyzer
Test board External voltage supply
Measuring: MDI EMI1
EMI1
Host µC board RF TC board
Figure 2-7: Test setup for measurement of RF disturbances on MDI
Test equipment requirements:
RF Analyzer: Spectrum analyzer or measuring receiver according to [IEC1]
Test board: according to [OPEN2]
External voltage supply
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2.7.3 Test procedure and parameters
The tests are based on the definitions of [OPEN2] for the 150 measurement method with the additional
definitions given in Table 2-9.
Parameter Description
Transceiver type and
configuration:
The used transceiver must be in line with definitions of [OPEN1] and
[OPEN2]. The used configuration for the transceiver should be in-line
with tests according to [OPEN2]
Optimized MDI test
network configuration:
Should be in-line with tests of used transceiver according to [OPEN2].
Communication test
signal:
according to [OPEN2]
Table 2-9: Test parameters for emission measurements
The tests shall be performed and documented according the following given in Table 2-10.
Test MDI test network (BIN)
Type of measuring on MDI pins
Coupling resistors
Sample
R1
[]
R2
[]
E1
standard
symmetric 120 120
Set of 2 samples of each group (best case /
typical / worst case)
E2 + 2.5 % unbalanced 121 118
E3 - 2.5 % unbalanced 118 121
E4
optimized
symmetric 120 120
E5 + 2.5 % unbalanced 121 118
E6 - 2.5 % unbalanced 118 121
Table 2-10: Required emission measurements
For each test case a diagram has to be presented in the test report. Recommended limits are given in
Appendix B.4.
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Appendix A - Test circuit boards
A.1 Example for test fixture S-Parameter measurement
The calibration points are the pads of the CMC at the test fixture board.
Figure A-1: Example Test fixture S-Parameter measurement - mixed mode, top layer
Figure A-2: Example Test fixture S-Parameter measurement - single ended, top layer
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Appendix B – Recommended limits for tests
B.1 S-Parameter measurements
For evaluation of mixed mode S-Parameters two limit classes for each parameter given in Figure B-1
through Figure B-4 are recommended. The limits are valid for test cases S1 through S8.
Figure B-1: Recommended limits for Sdd11 and Sdd22 (RL)
Figure B-2: Recommended limits for Sdd21 (IL)
-60
-50
-40
-30
-20
-10
0
1 10 100 1000
Limit
[dB]
[MHz]
S-Parameter measurement CMC for OA BroadRReach Item: RL (Sdd11,Sdd22)
f [MHz] RL [dB]
1 - 2710 - 2766 - 19
-5,0
-4,0
-3,0
-2,0
-1,0
0,0
1,0
1 10 100 1000
Limit
[dB]
[MHz]
S-Parameter measurement CMC for OA BroadRReach Item: IL (Sdd21)
f [MHz] IL [dB]
1 - 0,510 - 0,533 - 0,766 - 1,0
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Figure B-3: Recommended limits for Scc21 (CMR)
Figure B-4: Recommended limits for Ssd21, Ssd12 (DCMR) and Sds21, Sds12 (CDMR)
-60
-50
-40
-30
-20
-10
0
1 10 100 1000
Limit
[dB]
[MHz]
S-Parameter measurement CMC for OA BroadRReach Item: Common mode Rejection (Scc21)
f [MHz] CMR [dB]
1 - 2510 - 4580 - 45
1000 - 23
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
1 10 100 1000
Limit
[dB]
[MHz]
S-Parameter measurement CMC for OA BroadRReach Item: Common to Differential mode Rejection (Ssd21,Ssd12)
Differential to Common mode Rejection (Sds21,Sds12)
f [MHz] CDMR/DCMR[dB]
1 - 7010 - 70
100 - 50300 - 34
1000 - 24
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B.2 Damage from ESD
It is recommended that the CMC must withstand the ESD discharge with discharge voltage amplitude of
+/- 6 kV without damage.
B.3 Increase in RF immunity of interface network
For evaluation of the increase in RF immunity of interface network caused by the CMC two limit classes
given in Figure B-5 are recommended. The limits are valid for test cases D3, D4 and D5 (DPI tests on MDI
pins using optimized MDI test network).
Figure B-5: Recommended limits for DPI tests
10
15
20
25
30
35
40
1 10 100 1000
Limit
[MHz]
[dBm]
DPI Test - CMC for OA BroadRReach
f [MHz] DPI [dBm]
1 218 39
88 391000 33
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B.4 Decrease in RF emission of interface network
For evaluation of the decrease in RF emission of interface network caused by the CMC two limit classes
given in Figure B-6 are recommended. The limits are valid for test cases D3, D4 and D5 (150 Ohm emission
measurements on MDI pins using optimized MDI test network).
Figure B-6: Recommended limits for emission measurements
=== END OF DOCUMENT ===
-10
0
10
20
30
40
50
60
70
80
0,1 1 10 100 1000 10000
Limit
[MHz]
[dBµV]
150 Ohm Emission Measurement - CMC for OA BroadRReach
f [MHz] EMI [dBµV]
0,15 720,30 720,75 55
10 5576 23
2750 23