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Copyright © 2007 | FSI International | All Rights Reserved
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The Financial Benefits of All Wet Photoresist Removal
for 200mm
China IC Manufacture Annual SummitWuxi, China
November 29, 2007
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Outline
• Ion Implantation and PR Stripping Challenge• FSI ZETA® System ViPR™ process capability• Financial Benefit of All-Wet PR stripping
– Process / Production Cycle Time Reduction– Improved Clean Space Productivity– Reduced Capital Investment
• FSI ZETA® System Installed Base Update• Summary
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CMOS – Si Doping by Ion Implantation
15 layers on 90nm and up CMOS process
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⊗dehydrogenated,
amorphouscarbon layer
Key Factor on Implanted PR removal: Dopant / Dose / Energy
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Multiple Process Flexibility for IC fabrication
• FEOL– All-Wet Photoresist Strip (ViPR™)– Metal Strip for Salicide Formation
(PlatNiStrip™ )– Contact Clean
• BEOL– Cu/low-k Post-Ash Clean– Al/Cu Post Ash Clean (DSP)
• Back End Process• Wafer Bumping
– Photoresist Strip – Flux / Oxide Removal
• General – Wafer Reclaim
x8 ChemicalIn one tool
Fresh chemicalby POU mixing
Closed ChamberFSI ZETA® System = Batch Spray Technology
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Asher Residue
ZETA® System ViPR™ Process Eliminates Most Ash Steps
Patterned Photoresist
Clean Wafer
Etch or ion implant
Anneal and/or photo
Asher
ZETA® G3
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Comparison: ZETA® System vs. Wet Bench55keV, 1E15 As Implant
ZETA® System ViPR™ Process 13.5 min
Immersion 170°C for 30 min
• Residue remains• Process is not
feasible in a wet bench
• All PR removed• Direct comparison
shows ViPR™ process is more effective
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ZETA® System with ViPR™ Capability
UHDGate
ContactPlug
B-Gap Eng.
SDE Engineering
Wt / Channel Eng. Twin WellD/Well
CCD
S/D
Isolation
HALO Pocket
DPG1.0E+17
1.0E+16
1.0E+15
1.0E+14
1.0E+13
1.0E+12
1.0E+11
Dos
e (a
tom
s/cm
2 )
Energy (keV)0.1 1 10 100 1000 10000
Requires Ashing
FSI’s ViPR™Technology Capability
Traditional Wet Process Capability
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Reduce Production Cycle Time Significantly
All Wet Strip & Clean
gate gate
Process Cycle Time
Cap
ital
Cos
t
25mins 105mins
FSI’s ViPR™ Process All-Wet PR Stripping
Traditional Ash + Wet PR Stripping
Post Ash Clean
gate gate
Photoresist Ashing
+Batch Queue
gate gatedamagelayer
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Reduce Production Cycle Time Significantly
PR Stripping Process Cycle Time
0.00
5.00
10.00
15.00
20.00
25.00
30.00
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Mask Layers
Accu
milia
ted
Proc
ess
Cyc
le T
ime
(hr)
Ash+BenchFSI Zeta 200 ViPR
Cycle timeSaving
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> 250 WPH rate efficiency for Photoresist stripping process
Improve Clean Room Space Efficiency200mm Wafers
FSI Zeta 200ViPR
(6.3 M2)> 250 WPH
Wet Bench(19M2)
>250 WPH
Asher(6M2)
> 90WPH
Asher(6M2)
>90WPH
Asher(6M2)
>90WPH
ZETA® SystemAll-Wet
Ash + Wet Bench
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Improve Clean Room Space Efficiency200mm Wafers
0
50
100
150
200
250
300
350
10.8 21.6 32.4 43.2 54.0 64.8 75.6 86.4
Fab Capacity (1000's Wafers/ Month)
Cle
an S
pace
( m
2 )
Asher+BenchFSI Zeta 200 ViPR
Clean roomSpaceSaving
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Reduce Capital Investment
0
5,000
10,000
15,000
20,000
25,000
30,000
35,000
10.8 21.6 32.4 43.2 54.0 64.8 75.6 86.4
Fab Capacity (1000's Wafers/ Month)
Dep
osite
d C
apita
l (10
00's
US
D)
Asher + BenchFSI Zeta 200 ViPR
Overall CapitalSaving
BetterCapital turnover
efficiency
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ZETA® System Installation Base> 120 Systems in Production Worldwide
20 Systems Currently with ViPR™ Capability
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Zeta ViPR Summary
• ZETA® system's ViPR™ technology for all wet photoresist removal has been proven in a manufacturing environment.
• Financial Benefits:– Reduce resist stripping process time from
1.5–3hrs to 0.5hrs.– Improve overall fab production cycle time per
mask layer by 3 to 5%– Lower capital investment by 15 to 33%