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IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode
Features• Electrical features
- VCES = 3300 V- IC nom = 2400 A / ICRM = 4800 A- High current density- High DC stability- High short-circuit capability- Low switching losses- Low VCE,sat
- Tvj,op = 150°C- Trench IGBT 4- Unbeatable robustness- VCE,sat with positive temperature coefficient- Low Qg and Cres
• Mechanical features- AlSiC base plate for increased thermal cycling capability- High power density- Isolated base plate- Package with CTI > 600- RoHS compliant
Potential applications• High-power converters• Medium-voltage converters• Motor drives• Traction drives• UPS systems• Active frontend (energy recovery)• Commercial agriculture vehiclesProduct validation• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068Description
FZ2400R33HE4IHM-B module
Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.10www.infineon.com 2021-10-15
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
FZ2400R33HE4IHM-B moduleTable of contents
Datasheet 2 Revision 1.102021-10-15
1 Package
Table 1 Insulation coordination
Parameter Symbol Note or test condition Values Unit
Isolation test voltage VISOL RMS, f = 50 Hz 6.0 kV
Partial discharge extinctionvoltage
Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV
DC stability VCE(D) Tvj=25°C, 100 Fit 2100 V
Material of modulebaseplate
AlSiC
Creepage distance dCreep terminal to heatsink 32.2 mm
Clearance dClear terminal to heatsink 19.1 mm
Comparative tracking index CTI > 600
Table 2 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Stray inductance module LsCE 6 nH
Module lead resistance,terminals - chip
RAA'+CC' TC=25°C, per switch 0.08 mΩ
Module lead resistance,terminals - chip
RCC'+EE' TC=25°C, per switch 0.095 mΩ
Storage temperature Tstg -40 150 °C
Mounting torque for modulemounting
M - Mounting according tovalid application note
M6, Screw 4.25 5.75 Nm
Terminal connection torque M - Mounting according tovalid application note
M4, Screw 1.8 2.1 Nm
M8, Screw 8 10
Weight G 1200 g
2 IGBT, Inverter
Table 3 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Collector-emitter voltage VCES Tvj = -40 °C 3300 V
Tvj = 150 °C 3300
Continuous DC collectorcurrent
ICDC Tvj max = 150 °C TC = 105 °C 2400 A
Repetitive peak collectorcurrent
ICRM tP = 1 ms 4800 A
Gate-emitter peak voltage VGES ±20 V
FZ2400R33HE4IHM-B module1 Package
Datasheet 3 Revision 1.102021-10-15
Table 4 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Collector-emitter saturationvoltage
VCE sat IC = 2400 A, VGE = 15 V Tvj = 25 °C 2.40 2.65 V
Tvj = 125 °C 2.95
Tvj = 150 °C 3.10 3.25
Gate threshold voltage VGEth IC = 94 mA, VCE = VGE, Tvj = 25 °C 5.20 5.80 6.40 V
Gate charge QG VGE = ±15 V, VCE = 1800 V 40 µC
Internal gate resistor RGint Tvj = 25 °C 0.5 Ω
Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 280 nF
Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 8 nF
Collector-emitter cut-offcurrent
ICES VCE = 3300 V, VGE = 0 V Tvj = 25 °C 5 mA
Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 400 nA
Turn-on delay time(inductive load)
tdon IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGon = 0.5 Ω
Tvj = 25 °C 0.560 µs
Tvj = 125 °C 0.660
Tvj = 150 °C 0.670
Rise time (inductive load) tr IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGon = 0.5 Ω
Tvj = 25 °C 0.250 µs
Tvj = 125 °C 0.270
Tvj = 150 °C 0.290
Turn-off delay time(inductive load)
tdoff IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGoff = 3.3 Ω
Tvj = 25 °C 4.000 µs
Tvj = 125 °C 4.300
Tvj = 150 °C 4.300
Fall time (inductive load) tf IC = 2400 A, VCE = 1800 V,VGE = ±15 V, RGoff = 3.3 Ω
Tvj = 25 °C 0.540 µs
Tvj = 125 °C 1.180
Tvj = 150 °C 1.400
Turn-on time (resistive load) ton_R IC = 500 A, VCE = 2000 V,VGE = ±15 V, RGon = 0.5 Ω
Tvj = 25 °C 1.19 µs
Turn-on energy loss perpulse
Eon IC = 2400 A, VCE = 1800 V,Lσ = 85 nH, VGE = ±15 V,RGon = 0.5 Ω, di/dt =7600 A/µs (Tvj = 150 °C)
Tvj = 25 °C 2000 mJ
Tvj = 125 °C 3400
Tvj = 150 °C 3900
Turn-off energy loss perpulse
Eoff IC = 2400 A, VCE = 1800 V,Lσ = 85 nH, VGE = ±15 V,RGoff = 3.3 Ω, dv/dt =1500 V/µs (Tvj = 150 °C)
Tvj = 25 °C 3500 mJ
Tvj = 125 °C 4600
Tvj = 150 °C 4950
SC data ISC VGE ≤ 15 V, VCC = 2400 V,VCEmax=VCES-LsCE*di/dt
tP ≤ 10 µs, Tvj ≤ 150 °C
9600 A
(table continues...)
FZ2400R33HE4IHM-B module2 IGBT, Inverter
Datasheet 4 Revision 1.102021-10-15
Table 4 (continued) Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Thermal resistance, junctionto case
RthJC per IGBT 5.50 K/kW
Thermal resistance, case toheat sink
RthCH per IGBT, λgrease= 1 W/(m*K) 4.30 K/kW
Temperature underswitching conditions
Tvj op -40 150 °C
3 Diode, Inverter
Table 5 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Repetitive peak reversevoltage
VRRM Tvj = -40 °C 3300 V
Tvj = 150 °C 3300
Continuous DC forwardcurrent
IF 2400 A
Repetitive peak forwardcurrent
IFRM tP = 1 ms 4800 A
I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 1230 kA²s
Tvj = 150 °C 1110
Maximum power dissipation PRQM Tvj = 150 °C 5400 kW
Minimum turn-on time tonmin 10 µs
Table 6 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Forward voltage VF IF = 2400 A, VGE = 0 V Tvj = 25 °C 2.90 3.30 V
Tvj = 125 °C 2.60
Tvj = 150 °C 2.50 2.80
Peak reverse recoverycurrent
IRM VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)
Tvj = 25 °C 2440 A
Tvj = 125 °C 2820
Tvj = 150 °C 2880
Recovered charge Qr VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)
Tvj = 25 °C 1100 µC
Tvj = 125 °C 2100
Tvj = 150 °C 2500 (table continues...)
FZ2400R33HE4IHM-B module3 Diode, Inverter
Datasheet 5 Revision 1.102021-10-15
Table 6 (continued) Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Reverse recovery energy Erec VR = 1800 V, IF = 2400 A,VGE = -15 V, -diF/dt =7600 A/µs (Tvj = 150 °C)
Tvj = 25 °C 1480 mJ
Tvj = 125 °C 2750
Tvj = 150 °C 3200
Thermal resistance, junctionto case
RthJC per diode 10.6 K/kW
Thermal resistance, case toheat sink
RthCH per diode, λgrease= 1 W/(m*K) 5.10 K/kW
Temperature underswitching conditions
Tvj op -40 150 °C
FZ2400R33HE4IHM-B module3 Diode, Inverter
Datasheet 6 Revision 1.102021-10-15
4 Characteristics diagrams
output characteristic (typical), IGBT, InverterIC = f(VCE)VGE = 15 V
output characteristic (typical), IGBT, InverterIC = f(VCE)Tvj = 150 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
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0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
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transfer characteristic (typical), IGBT, InverterIC = f(VGE)VCE = 20 V
switching losses (typical), IGBT, InverterE = f(IC)RGoff = 3.3 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V
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FZ2400R33HE4IHM-B module4 Characteristics diagrams
Datasheet 7 Revision 1.102021-10-15
switching losses (typical), IGBT, InverterE = f(RG)IC = 2400 A, VCE = 1800 V, VGE = ± 15 V
switching times (typical), IGBT, Invertert = f(IC)RGoff = 3.3 Ω, RGon = 0.5 Ω, VCE = 1800 V, VGE = ± 15 V, Tvj =125 °C
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0 600 1200 1800 2400 3000 3600 4200 48000.01
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switching times (typical), IGBT, Invertert = f(RG)IC = 2400 A, VCE = 1800 V, VGE = ± 15 V, Tvj = 125 °C
transient thermal impedance , IGBT, InverterZth = f(t)
0 1 2 3 4 5 60.1
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10
0.001 0.01 0.1 1 100.01
0.1
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FZ2400R33HE4IHM-B module4 Characteristics diagrams
Datasheet 8 Revision 1.102021-10-15
reverse bias safe operating area (RBSOA), IGBT,InverterIC = f(VCE)RGoff = 3.3 Ω, VGE = 15 V, Tvj = 150 °C
capacity characteristic (typical), IGBT, InverterC = f(VCE)f = 100 kHz, VGE = 0 V, Tvj = 25 °C
0 500 1000 1500 2000 2500 3000 35000
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gate charge characteristic (typical), IGBT, InverterVGE = f(QG)IC = 2400 A, Tvj = 25 °C
forward characteristic of (typical), Diode, InverterIF = f(VF)
0 4 8 12 16 20 24 28 32 36 40-15
-13
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0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.00
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FZ2400R33HE4IHM-B module4 Characteristics diagrams
Datasheet 9 Revision 1.102021-10-15
switching losses (typical), Diode, InverterErec = f(IF)VCE = 1800 V, RGon = RGon(IGBT)
switching losses (typical), Diode, InverterErec = f(RG)VCE = 1800 V, IF = 2400 A
0 600 1200 1800 2400 3000 3600 4200 48000
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transient thermal impedance , Diode, InverterZth = f(t)
safe operation area (SOA), Diode, InverterIR = f(VR)Tvj = 150 °C
0.001 0.01 0.1 1 100.1
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0 500 1000 1500 2000 2500 3000 35000
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FZ2400R33HE4IHM-B module4 Characteristics diagrams
Datasheet 10 Revision 1.102021-10-15
5 Circuit diagram
Figure 1
6 Package outlines
Figure 2
FZ2400R33HE4IHM-B module5 Circuit diagram
Datasheet 11 Revision 1.102021-10-15
7 Module label code
2
Module label code
Code format Data Matrix Barcode Code128
Encoding ASCII text Code Set A
Symbol size 16x16 23 digits
Standard IEC24720 and IEC16022 IEC8859-1
Code content ContentModule serial numberModule material numberProduction order numberDate code (production year)Date code (production week)
Digit1 – 56 - 1112 - 1920 – 2122 – 23
Example71549142846550549911530
Example
7154914284655054991153071549142846550549911530
Figure 3
FZ2400R33HE4IHM-B module7 Module label code
Datasheet 12 Revision 1.102021-10-15
Revision historyDocument revision Date of release Description of changes
1.00 2021-03-25
1.10 2021-10-15 Final datasheet
FZ2400R33HE4IHM-B moduleRevision history
Datasheet 13 Revision 1.102021-10-15
TrademarksAll referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-10-15Published byInfineon Technologies AG81726 Munich, Germany © 2021 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: erratum@infineon.com Document referenceIFX-ABA409-002
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Please note that this product is not qualifiedaccording to the AEC Q100 or AEC Q101 documentsof the Automotive Electronics Council.
WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury.