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Gencoa3G Circular MagnetronPresenting Gencoa’s 3rd generation range of circular magnetrons
November 2017 www.gencoa.com 1
November 2017 2www.gencoa.com
• Product Overview
• Introduction
• 3G Design Features
• 3G Mechanical Options
• Low pressure operation
• High Yield Magnetics from 4” target
• High Strength Magnetics
• Performance curves
• Deposition Rate
• Conclusion
Copper target, DC 300W, 8.5 E-3 Torr
Copper target, RF 300W, 8.5 E-3 Torr
Contents
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3G
Gencoa circular product range
3G magnetron features
• Launched in 2017
• Works in wide range of pressure – into 10-6 Torr range
• Compact Size
• Unique non-bellow tilted magnetron head
• High Yield magnetics for the 4” target size
• Magnetic material sputtering
• Gas Injection as standard
• PEEK insulation to reduce outgassing
• Accommodates different target thickness
• DC, DC pulse, RF and HIPIMS ready
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Copper target, DC 300W, 8.5 E-3 Torr
Copper target, RF 300W, 8.5 E-3 Torr
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Available in a choice of five assembly options:
• 3G - Full option with 45⁰ tilt, RF /HIPIMS ready and gas injection
• 3G(A) - The cathodes are supplied with a straight shaft, RF/HIPIMS ready and gas injection
• 3G(B) - The basic design with only gas injection as option
• 3G(C) - This model comes with tilt and gas injection but no power connection box.
• 3G(E) – Externally-mounted magnetron with gas injection and RF/HIPIMS ready
3G
3G(E)
3G
(C)
3G
(B)
3G cathode variations
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• Small head size – approx. 1” larger than target size
• Most compact tilt height in industry – tilt pivot point is 1” from cathode rear allowing higher tilt angles
• 3G dimensions allow for smaller chambers to be used whilst having the same tilt and head positions
C
A
B24.4
Target A B C
2” 92.3 83.8 76.2
3” 97.7 85.7 101.6
4” 114 101.5 128.1
3G small head size and tilt means smaller chambers
• ±45° tilt without bellows
• Angle can be viewed and adjusted from the front of the cathode
• The 2 position clamp pressure is released by means of a supplied tool or by hand, the head is rotated to the desired angle, then the clamp is re-fixed to the first ‘notch’ tight position
• To measure the angle, there is a milled slot on the clamp that is aligned with the protractor angle allowing the tilt angle to be fixed accurately to 1°.
• The protractor is removable.
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Shaft
Angle Pointer
Tilt Clamp
Angle Call out
45° tilted magnetron
Innovative head angle adjustment
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• Target clamp adjust to the target thickness. anti-sticking materials used for the threaded fixing
• Can use a thermal conduction gasket between target and cooled diaphragm
• High water flow (2 l/min) and diaphragm cooling for high power capacity
• Directly cooled targets available – factory configured
Threaded Target Clamp
PEEK Insulator (reduces Outgassing)
4” HY target with graphite gasket and diaphragm
Eroded Target
Thermal Conduction Sheet (Graphite)
Diaphragm
Self-adjusting target clamps
3G mechanical option matrix
ModelGas
injectionTilt
RF/ HIPIMS
Shutter Chimney Wall mount feedthrough
Water-cooled anode
Hidden anode
3G • • • • • • • •
3G(A) • • • • • • • •
3G(B) • • • • • • • •
3G(C) • • • • • • • •
3G(E) • • • • • • • •
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• Standard Feature
• Optional
• Not Applicable
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Various mechanical options available
• Design allows to fit manual and pneumatic shutter
• Anode cooling to provide extra source cooling for HOT chamber environments
• Hidden anode
• Sputter chimney
• Quick coupling feedthrough
• ISO or CF flange mounting option
Shutter (Optional)
Power Connector (N type /7-16”/HN)
Anode Cooling(Optional) Wall Mount
Feedthrough (Optional)
Shutter Adjustment Manual/Pneumatic (Shown)(Optional)
Gas Injection
3G mechanical options
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Shutter option External mountAnode cooling
3G in 45⁰tilt position
3G with no shaft(customer weld)
Sputter chimney
3G mechanical options
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• High yield (HY) type array available from 4”
• >40% target utilization
• Gencoa solution for precious material sputtering
Ta
rget
pro
file
,m
m
-60 -40 -20 0 20 40 60
4” high yield 10mm thick target erosion
Radial Position, mm
9
6
3 Ta
rget
pro
file
,m
m
3G high yield type magnetics for high target use
Magnetic material sputtering (high strength array)
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• The cathodes allow magnetic material sputtering as standard with diaphragm cooled target.
• Thicker target can be sputtered using directly cooled target. (Pre- configured at factory)
• Anode height adjustable to accommodate different target thickness.
Size
Magnetic Strength on the target
surface (G)
Fe Thickness
(mm)
Ni Thickness
(mm)
50mm (2”)
780 1 3
75mm (3”)
840 1.5 4
100mm (4”)
620 0.5 2
Anode height line
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• Extensive testing performed on 3G prototypes for product reliability and plasma stability
• Achieved 2 l/min water flow through the cathode at 1.5 bar pressure difference
• Operates across a wide range of pressures
• Coating uniformity & deposition rate measured for different target diameters
• Performance curves obtained at various pressure levels for various power modes
Copper target, DC 300W, 8.5 E-3 Torr
Copper target, RF 300W, 8.5 E-3 Torr
3G cathode testing
80
120
160
200
240
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
v
olt
ag
e, V
Pressure, Torr
2” Cu Target
RF 300W
RF 180W
300
350
400
450
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
2” Cu target
DC 300W
DC 180W
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10-6 to 10-2 operating pressure range (2” target diameter)
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300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
v
olt
ag
e, V
Pressure, Torr
3” Al target
DC 600W
DC 300W
300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
3” Cu target
DC 600W
DC 300W
10-6 to 10-2 operating pressure range (3” target diameter)
10-6 to 10-2 Operating Pressure Range (4” target diameter)
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300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
4” Cu target
DC 600W
DC 300W
300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
4” high strength Cu target
DC 600W
DC 300W
300
350
400
450
500
550
600
650
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
4” high yield Cu Target
DC 600W
DC 300W
Precious material sputtering (high yield array)
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0
1
2
3
4
5
200
300
400
500
600
700
0 400 800 1200 1600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 Torr, DC powerAl target
Voltage
Current
Coating uniformity (2” target diameter)
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0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50
OD
Position, mm
DC Power 150mm T/S, Copper target
Range (mm) Uniformity
50 2.0%
30 0.9%
20 0.4%
Coating uniformity (2” target diameter)
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0
0.2
0.4
0.6
0.8
1
1.2
-50 -40 -30 -20 -10 0 10 20 30 40 50
OD
Position (mm)
Normalised Uniformity over 100mm
50mm T/S
150mm T/S
100mm T/S
DC/RF uniformity comparison (3” target diameter)
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Range, mmDC
Uniformity
50 ±4.4%
60 ±6.5%
70 ±8.4%
Range, mmRF
Uniformity
50 ±3.5%
60 ±5.7%
70 ±7.9%
Al target, DC 300W, 2.5 E-3 Torr
Al target, RF 300W, 2.5 E-3 Torr
0
0.2
0.4
0.6
0.8
1
1.2
-30 -20 -10 0 10 20 30
3" Al target @100mm T-S
RF
DC
DC/RF uniformity comparison (4” target diameter)
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Range, mmDC
Uniformity
50 ±5.1%
60 ±7.2%
70 ±9.1%
Range, mmRF
Uniformity
50 ±5.2%
60 ±6.9%
70 ±9.1%
Cu target, DC 300W, 1.4 e-2Torr
Cu target, RF 300W, 1.4 e-2Torr
0
0.2
0.4
0.6
0.8
1
1.2
-40 -20 0 20 40
4" Cu Target @150mm T-S
DC
RF
Power Vs Voltage Vs Current (2” Cu target, DC power)
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0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5E-4 Torr
0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 Torr
0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
Voltage
Current
Voltage
Current
Power Vs Voltage (2” target, RF Power)
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50
90
130
170
50 100 150 200 250 300
DC
vo
lta
ge
, V
Forward power, W
Cu target
5.0E-4 Torr
2.5E-3 Torr
1.4E-2 Torr
250
300
350
400
450
500
550
600
50 100 150 200
DC
vo
lta
ge,
V
Forward power, W
RF power, 2.5E-3 Torr, fused silica target
Power Vs Voltage Vs Current (3” Al target, DC power)
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0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 T orr,
0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 T orr,
Voltage
Current
Voltage
Current
0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rren
t, A
Vo
lta
ge,
V
Power, W
8.5E-3 Torr
Voltage
Current0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
Power Vs Voltage (3” target, RF power)
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120
160
200
240
280
50 100 150 200 250 300
DC
vo
lta
ge,
V
Forward power, W
RF power, Al target
5.0E-4 Torr
2.5E-3 Torr
8.5E-3 Torr
1.4E-2 Torr
Power Vs Voltage Vs Current (4” Cu target, DC power)
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0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
8.5E-3 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 Torr
Voltage
Current
Power Vs Voltage (4” target, RF power)
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0
50
100
150
200
250
50 100 150 200 250 300
DC
vo
lta
ge,
V
Forward power, W
RF power, Cu target
5.0E-4 Torr 2.5E-3 Torr
8.5E-3 Torr 1.4E-2 Torr
3G Cu example deposition rates (100mm T-S)
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TargetSize
Target Thickness (mm)
Power Mode
Power (W)
Deposition Rate (nm/min)
2” 3 DC 300 134
2” 3 RF 300 94.5
3” 6 DC 300 133
3” 6 RF 300 80
4” 6 DC 300 116
4” 6 RF 300 70
Gencoa 3G – No.1 choice for R&D Thin Film Technology
November 2017 www.gencoa.com 31
Gencoa 3G Advantages Competition
Lower Pressure Operation. 3G magnetrons can work down to e-6 Torr range
Most small size magnetrons work e-4 Torr range only
Small head size allows for smaller chambers or more sources within the same space
Larger heads require larger chambers
Magnetron head can be tilted 45 ⁰ with ease. No welded bellows and compact tilt height allows sources closer together in a cluster. The angle can be fixed accurately to 1 °.
Magnetrons are tilted using welded bellows which requires more chamber space and less accurate.
High Yield magnetics for 4” offering >40 % target use and recommended for precious metal sputtering
Not Available
Gas injection standard for all magnetrons Extra cost
DC, RF & HIPIMS compatible as standard Ordered as an option
Gencoa developed uniformity software to generate a coating uniformity direct from the magnetic field model and taking into account all system parameters
Not available
3G Cathode Summary
• Compact Size
• Wide range of working pressure range
• ± 45º tilt angle adjustment (1° accuracy)
• Standard target sizes
• High yield (HY) magnetics available for 4" and 5" target diameters
• Internal gas injection as standard
• DC,RF and HIPIMS ready
• Easy target change and choice of target thickness (1-6mm)
• High strength magnetics for sputtering of magnetic material
• Indirect or direct target cooling (pre-configured)
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Gencoa cluster solution for R&D Market
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IMC75• A powerful new tool for
thin film research.• Fits into the space of a
typical magnetron and has head tilt adjustment.
• Multiple uses - ion assistance, patterning, pre-cleaning, coating stripping, PECVD
• DC power technology for low cost of ownership.
• Dedicated Power supply with Gas regulation via automatic feedback control
FFE75• Dynamic plasma
movement for full face erosion
• Clean target for defect free layers
• High target use for precious metals
• Better Uniformity• Ideal for high cost
and compound targets.
• RF, HIPIMS and DC Option
• Tilt, shutter, Gas injection available
3G75• State of the
art design • Wide rang of
operating pressure
• Compact in size
• Various mechanical options possible.
• RF, HIPIMS and DC Option
Further information
For further information on the Gencoa range of 3G circular magnetrons, visit www.gencoa.com/3g-circular or email sales@gencoa.com to contact member of the sales team.
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