GOOD MORNING. TECHNOLOGY THAT IS DRIVING THE WORLD VLSI AND ASIC DESIGN VERY LARGE SCALE INTEGRATED...

Post on 24-Dec-2015

213 views 0 download

Tags:

transcript

GOOD MORNING

TECHNOLOGY THAT IS DRIVING THE WORLD

VLSI AND ASIC DESIGN

• VERY LARGE SCALE INTEGRATED

CIRCUIT AND

APPLICATION SPECIFIC INTEGRATED CIRCUIT DESIGN © R.Lamsal

DEVELOPMENT IN INTEGRATED CIRCUIT TECHNOLOGY

SMALL SCALE INTEGRATIONSSI

MEDIUM SCALE INTEGRATIONMSI

LARGE SCALE INTEGRATIONLSI

VERY LARGE SCALE INTEGRATIONVLSI

ULTRA VLSI

< 10 TRANSISTORS

10 TO 100 TRANSISTORS

100 TO 1,000 TRANSISTORS

MORE THAN 1000 TO MILLION OF TRANSISTORS

© R.Lamsal

VLSI DESIGN CYCLE

Design specification

HDL CAPTURE

RTL SIMULATION

NETLIST GENERATION

IMPLEMENTATIONIN FPGA

© R.Lamsal

PLACEMENT,ROUTINGPOSTLAYOUT

SIMULATION,MASKINGPACKAGING

VLSI DESIGN DOMAINS

Behavioral

Structural

Physical

1

2

3

© R.Lamsal

PROCESSORS

DATA PATH; ALU,REGISTERS

TRANSISTOR

ALGORITHM

RTL (HDL)

LOGIC

TRANSISTOR

CELL.

CHIP,MODULE

BOARD,SYSTEM

Introduction to HDL

Hardware descriptive languages are used purely to describe the digital circuits in various level of abstraction ranging from gate to board

and system level.

HDL differs from conventional HLL in the sense they make use of concurrency however

sequential option is also provided.

HDL incorporates timing feature to represent real hardware.

© R.Lamsal

AND GATE

Some delay occursTo pass the input

Signal at the output

A

B

C

C<=A AND B after propagation delay;

© R.Lamsal

Transistor representation of And gate

• Delay occurs due to RC effect of the transistor.

A B

CVDD

© R.Lamsal

Acts as a capacitor

Placement TYPE1

Cell A

Cell C

Cell B

Cell D

Cell E

Cell F

© R.Lamsal

PLACEMENT TYPE2

Cell A

Cell C

Cell B

Cell D

Cell F

Cell E

© R.Lamsal

ROUTING

Cell A

Cell C

Cell B

Cell D

Cell F

Cell E

© R.Lamsal

Nmos transistor

sourcegate

Drain

© R.Lamsal

FABRICATION OF NMOS TRANSISTOR

BASE SILICON

SIO2 ADDED AT THE TOP

PHOTOMASKING AND UV RAYS

Polysilicon and diffusionTo create base source and drain region

Metaliziation

© R.Lamsal

IMPORTANT PARAMETERS TO BE CONSIDERED WHILE DESIGINING THE CHIP.

• 1. POWER

• 2.SPEED

• 3.AREA© R.Lamsal

EXAMPLE

• FULL ADDER

FULL ADDER

A

B

CIN

CARRYOUT

SUM

© R.Lamsal

TRUTH TABLE

A B CIN SUM CARRYOUT

0 0 0 0 0

0 0 1 1 0

0 1 0 1 0

0 1 1 0 1

1 0 0 1 0

1 0 1 0 1

1 1 0 0 1

1 1 1 1 1

Sum<= A XOR B XOR CIN ;

Carry<= (A AND B) OR ( A AND CIN) OR (B AND CIN) ;

© R.Lamsal

VHDL DESCRIPTION• library IEEE;• use IEEE.STD_LOGIC_1164.ALL;• use IEEE.STD_LOGIC_ARITH.ALL;• use IEEE.STD_LOGIC_UNSIGNED.ALL;

• entity fulladder1 is• Port ( a : in std_logic;• b : in std_logic;• cin : in std_logic;• CARRYout : out std_logic;• SUM : out std_logic);• end fulladder1;

• architecture Behavioral of fulladder1 is

• begin• SUM<=a xor b xor cin;• CARRYOUT<=(a and b )or (a and cin) or (b and cin);• end Behavioral; © R.Lamsal

SIMULATION WAVE

© R.Lamsal

LIST TABLE

© R.Lamsal

RTL SCHEMETIC

© R.Lamsal

SYNTHESIS

© R.Lamsal

© R.Lamsal