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Grazing incidence X-Ray Fluorescence Analysis

and X-Ray Reflectivity

Giancarlo Pepponi Fondazione Bruno Kessler MNF – Micro Nano Facility

MAUD school 2015 Trento, Italy

1 GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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acknowledgements

Fabio Brigidi - Elettra, Trieste, Italy

Christina Streli – Technische Universität Wien – Atominstitut

Dieter Ingerle – Technische Universität Wien – Atominstitut

Florian Meirer – Universiteit Utrecht, Netherlands

Luca Lutterotti – Università degli studi di Trento

Mauro Bortolotti – Università degli studi di Trento

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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XRF configurations

XRF

bulk analysis

micro-XRF

2D - 3D micrometer spot

grazing incidence

TXRF

GI-XRF

XSW

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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XRF GIXRF

Why?

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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XRF GIXRF

A. H. Compton, The total Reflection of X-Rays, Phil. Mag., 45, 1121; 1923

Pictures from the Nobel Lecture, December 12, 1927

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Snell’s law – optical region

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Snell’s law – x-ray region

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Snell’s law – x-ray region

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Index of refraction – decrement - delta

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Critical angle for total reflection

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Snell’s law – absorption

Au sheet

Calculated for E = 17500eV

I0

I(x)

0 50 100 150 200 250 300 350 400 450

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Inte

nsity [a

rbitra

ry u

nits]

distance [µm]

Beer-Lambert‘s Law:

)exp()( 0 µxIxI

Linear absorption coefficient:

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Snell’s law – x-ray region – with absorption

medium 1 is vacuum Total external reflection

heterogeneous wave

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Beta – absorption

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Atomic form factor

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

photoelectric absorption

corrections for photoabsorption (Kramers-Kronig dispersion) relativistic effects, nuclear scattering

‘anomalous’ energy dependent terms

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Atomic form factor (forward direction)

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Grazing incidence, θ close to 0

forward scattering factors (x = theta = q = 0)

f1 and f2 are directly related to the index of refraction (reflection, refraction, XRR)

photoabsorption

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Fresnel – reflected intensity

Propagating electromagnetic field

Photon Energy

Energy of the electromagnetic field, number of photons

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Fresnel – 2 media

Electric vector perpendicular to the plane of incidence (s, TE, polarisation ) In German senkrecht = perpendicular

Approximations (ignore quadratic terms):

Same formalism as for XRR X-Ray Reflectivity

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Reflectivity

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Reflectivity

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Reflectivity

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Fresnel – x-ray region – exact

Complex dielectric constant

B.L. Henke, Phys. Rev. A, 6, 1, (1972) M.-R. Lefévère, M. Montel, Opt. Acta 20, 97 (1973)

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Fresnel – approximated vs exact - angle of refraction

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Fresnel – approximated vs exact - transmission

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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GIXRF - intensity calculation – 1 interface – thin layer

P. Kregsamer, (1991), Spectrochimica Acta Part B, 46(10), 1332–1340. (1991)

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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‘diluted’ dopant profile

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

G. Pepponi et al. / Spectrochimica Acta Part B 59 (2004) 1243–1249

optical properties of the substrate are used

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Multiple layers

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

L. Parratt, Physical Review, 95(2), 359–369, 1954

X-Ray Reflectivity (but GIXRF also “given”)

In the optical range: F. Abeles, Le Journal de Physique et le Radium, "La théorie générale des couches minces", 11, 307–310 (1950) Recursive transfer matrix method, used also for XRR

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Multiple layers

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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‘non ‘diluted’ doping profiles

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

optical properties calculated for each layer each layer a different material

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‘non diluted’ doping profiles

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Total reflection, OK, but practically?

The interference of incident and reflected beam causes a standing wave field above the reflectors surface.

Intensity distribution as a function of incident angle and depth

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Total reflection, OK, but practically?

TXRF – analysis of surface contamination analysis of materials deposited on flat reflecting surface GIXRF – get “positional-structural” (as well as chemical) information through the angular dependence of fluorescence in the grazing incidence region: above-below surface film-like, particle-like particle size layered samples XSW – standing wave field created by interference of incident and Bragg reflected field but also the study of crystalline like “super-structures” (e.g. Langmuir-Blodgett films)

EDX-

detector

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Quantitative analysis

Empirical methods

First principles / fundamental parameters - deterministic - Monte Carlo

PROS No physical model needed CONS Need of SPECIFIC standard samples One calibration per experimental condition APPLICATION Good for monitoring very similar samples

PROS NON SPECIFIC standard samples used to evaluate model parameters One calibration per experimental condition CONS Need a physical model to simulate results APPLICATION Good if samples keep changing

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Quantitative analysis

PROS NON SPECIFIC standard samples used to evaluate model parameters One calibration per experimental condition CONS Need a physical model to simulate results APPLICATION Good if samples keep changing

Describe/model - source - detector (efficiency) - sample Interactions: - scattering - photoelectric absorption - fluorescence/auger Fundamental Parameters

First principles / fundamental parameters - deterministic - Monte Carlo

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Quantitative analysis

First principles / fundamental parameters - deterministic - Monte Carlo

PROS NON SPECIFIC standard samples used to evaluate model parameters One calibration per experimental condition CONS Need a physical model to simulate results APPLICATION Good if samples keep changing

Peak intensity Extraction Intensity simulation/comparison/fitting

Spectrum (spectra) simulation/comparison/fitting

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Quantitative analysis

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Monochromatic

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Fundamental parameters

- Standard Atomic Weight: IUPAC recommended values - Elemental densities: J. H. Hubbell and S. M. Seltzer - Electron binding energies, Edge Jump, X-Ray lines, Transition probabilities, Fluorescence yield, Cascade effect: xraylib, T. Schoonjans et al. - Atomic energy level widths: J. L. Campbell, T. Papp - Fluorescence yield, Coster-Kronig probabilities: M. O. Krause - Atomic scattering factors (150eV-30000eV): B. L. Henke et al. - Atomic scattering factors (30000eV - 300000 eV): S. Brennan et al. - Phoelectric (shell-specific and total), elastic and inelastic scattering cross sections: H.Ebel et al.

https://data-minalab.fbk.eu/txrf/xraydata/

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Fundamental parameters

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Sample

Experimental Parameters

Elements

Materials

Layers

( Contamination/dopant Profile )

Nanoparticles

Experimental Set-up

(primary beam, detector)

Geometrical Configuration

Simulation

Experimental Data

Data Fittin

g

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Fundamental parameters

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Elements

Materials

Layers

( Contamination/dopant Profile )

Nanoparticles

In XRF: Cross sections are tabulated in cm^2/g For single elements

To define a material in XRF you must provide: Weight fractions and density

In XRD: you just need the phase parameters

Phases

Layers

( Contamination/dopant Profile )

Nanoparticles

SiO2 (native)

Si (bulk)

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Example : doped silicon surface

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Si (bulk)

SiO2 (native)

Arsenic concentration

cm at

om

s /

cm^3

20nm

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GIXRF quantitative analysis

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

0.1 deg simulated spetrum

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GIXRF quantitative analysis

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XRR

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

GIXRF vs XRR ?

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GIXRF - intensity calculation – 1 interface

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

sensitive to electron density and its changes: - material density - film thickness - optical constants - roughness

reveals elemental surface concentrations: - material composition - in depth elemental information

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GIXRF vs XRR

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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GIXRF - ambiguity problem - As doping profile

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

0 5 10 150

2

4

6

8

10

12

14x 10

21

depth [nm]

co

nc

en

tra

tio

n [

ato

ms

/cm

3]

Depth distribution of Arsenic

fit result

SIMS GIXRF fit result looks very good, almost no difference between calculation and measurement

… but the result for the depth distribution is unrealistic -> GIXRF is ambiguous

courtesy of Dieter Ingerle

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GIXRF - ambiguity problem – Hf thin film

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

GIXRF can only determine surface mass concentration! Ambiguity thickness vs. density (XRR probably better)

GIXRF measurement data fitted to calculated values. This comparison shows the ambiguity of GIXRF concerning density and thickness. For the left side a layer-density of 6.7 g/m3 was used, while on the right 6.1 g/m3 was used

courtesy of Dieter Ingerle

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GIXRF - intensity calculation – 1 interface

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Si wafers implanted with 1E15 atoms/cm2 of Arsenic by beamline ion implantation with different implantation energies: • As1 – 0.5keV • As3 – 2keV • As4 – 3keV

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Roughness

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

L. Nevot, P. Croce, Revue de physique appliquée, 15, 761 (1980)

P. Croce and L. Nevot, Rev. Phys. Appl. 11, 113 (1976)

interface layers with changing index of refraction - error function , linear

factors multiplying the Fresnel coefficient

All good for XRR but what about Fluorescence???

Can we model it as particles?

Multiply reflectivity and transmission by a damping factor

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Roughness

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Depth resolution – buried layers and interfaces

Definition of depth resolution:

- different at different depths

Sample 10nm In2O3 / 4nmAg / 10nm In2O3

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Depth resolution – junction depth

0 2 4 6 8 10 12 14 16

0.02

0.04

0.06

0.08

0.10norm

alis

ed A

s c

oncentr

ation [a.u

.]

depth [nm]

0 2 4 6 8 10 12 14 161E-3

0.01

0.1

no

rmalis

ed

As c

on

cen

tra

tio

n [a

.u.]

depth [nm]

0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008

0

1

2

3

4

5

flu

ore

sce

nce

in

ten

sity [

a.u

.]

angle [rad]0.000 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008

-0.006

-0.004

-0.002

0.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

diffe

rence a

mong a

ngula

r

fluore

scence inte

nsitie

s

angle [rad]

blu - black

blu - red

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Fluorescence intensity cascade effect – secondary fluorescence

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Incident photon

Photoelectron

Fluorescence

photon

Incident photonIncident photon

PhotoelectronPhotoelectronPhotoelectron

Fluorescence

photon

Fluorescence

photon

Fluorescence

photon

Cascade photon

Secondary

fluorescence

photon

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Fluorescence intensity cascade effect – secondary fluorescence

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

GaAs solution deposited on silicon – Cascade – No Secondary Fluo

GaAs Wafer – No Cascade – No Secondary Fluo

GaAs Wafer – Cascade – Secondary Fluo

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GIXRF - secondary fluorescence

200 nm of ZnSe on Ge ZnK

GeKa1

SeKa1

GeK

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Geometric corrections

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Conway, John T. , Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 614.1 (2010): 17-27.

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Divergence

Divergence 0.5 mrad

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‘Strange’ angular fluorescence dependencies

????

And the happy end!

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GIXRF on plasma immersion doped samples

P2 As PIII (7s/ 50mTorr) Si as implanted P1 As PIII (7s/ 50mT0rr) Si RTA 1050°C

Very strange angle scan!!!

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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GIXRF on plasma immersion doped samples

Confronting GI-XRF with theory reveals that it is hiding As containing surface particles/residues.

Characteristic shapes due the angular dependence of the fluorescence radiation for three different cases of atomic locations.

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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GIXRF - particles

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GIXRF - particles

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Result: about 1/3 of the As is in particles

and 2/3 in the film-like doped layer

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Arsenolite crystals on the surface

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Following the trace of breadcrumbs we found that the particles are actually micro- and nano-crystals…

Si

As O

… crystals that are made of Arsenic and Oxygen …

… and melt in the electron beam. Total exposure time:

1h10min

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Extension of the wavefield - coherence

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Extension of the wavefield - coherence

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

courtesy of Dieter Ingerle

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Extension of the wavefield - coherence

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

courtesy of Dieter Ingerle

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Example Ge:Sn

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

SIMS measured profile

Beta curve

Si Ge Sn

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Example Al2O3 protective layers

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

Experimental Data

Simulation

Background

Al - Ka

Si - Ka

S - Ka

Ag - La University of Maryland

Prof. Ray Phaneuf

Amy Marquardt

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Example Al2O3 protective layers

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Example Al2O3 protective layers

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

𝐴𝑔4𝐶𝑢1.5𝑆1.5

Multiple Layers

Diffusion Profile

Nanoparticles

Nanoparticles Composition:

Sulphur Estimation

Nanoparticles Size:

Gaussian distrib. - xc: 30 nm ; σ 6 nm

(good agreement with AFM measurements)

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Grazing exit x-ray fluorescence

R. Becker, J. Golovchenko, J. Patel, PRL 50(3), 153–156

“the principle of microscopic reversibility predicts that the results of absorption- and emission-type experiments should be identical were they performed with the same wavelength radiation.”

GI-XRF

GE-XRF

Advantage: - higher lateral resolution Disadvantage: - reduced sensitivity

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Grazing exit

SSRL beamline 10-2 mesoprobe setup pinhole: spotsize 500µm2

Motivation: Check spatial homogeneity

S2R6C10

S2R6C11

Scan 180

200

190

Y [mm]

“the principle of microscopic reversibility predicts that the results of absorption- and emission-type experiments should be identical were they performed with the same wavelength radiation.” Becker et al.

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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Grazing exit

Motivation: Check spatial homogeneity of annealing

increasing angle Motor position

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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GIXRF/XRR software - JGIXA

Dieter Ingerle – ATI - TuWien

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

courtesy of Dieter Ingerle

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XRF/GIXRF/XRR software - GIMPY

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

• ED-XRF • GI-XRF • GE-XRF

• Spectrum Simulation

• XRR

SciPy library

Computation/Simulation

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The Software

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi

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THANKS FOR YOUR

ATTENTION

GIXRF and XRR– MAUD school 2015 – Giancarlo Pepponi