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HeterogeneousTechnology
AllianceSOI MEMS Platform
Heterogeneous Technology Alliance
23-Aug-11 | Page 1
Added value of HTA SOI MEMS Platform to customers
Heterogeneous Technology Alliance
23-Aug-11 | Page 2
Attractive offering of HTA SOI MEMS PlatformOne-stop shop
Very extensive R&D resources, 900 researchers
Industrialization bridging the gap between prototyping and production
Can provide prototyping and process development
Large set of process modules44
33
22
11
Large set of processing equipment with back-up/second source options
Large set of SOI MEMS devices in offering
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Heterogeneous Technology Alliance
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SOI MEMS Platform
• HTA offers leading SOI MEMS process platform for research, prototyping andpilot production as well as production ramp-up services
VISION
• Makes the large arsenal of tools available for customers and all HTA partners
• Bridging the gap between research and manufacturing
• Strengthening the European position in MEMS field
• Helping researcher to do their work, through networking, creating new projects,and fostering innovations.
MISSION
Heterogeneous Technology Alliance
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• Platform purpose
• To create flexibility in designing andmanufacturing new components
• Customer needs can be better met throughjoining our arsenal of capabilities
• Open up our arsenal to all HTA partners
• Definition
• Platform forms a basis for research andproduct development
• Platform enables flexible processing capabilityand prototyping
Platforms
Prod
uct1
Prod
uct2
Component1 Component2
Product portfolio
Component1 Component2
Platform purpose and definition
Heterogeneous Technology Alliance
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Example of SOI MEMS fabrication cycle
Heterogeneous Technology Alliance
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• This platform covers Silicon-on-Insulator (SOI) MEMS fabricationcapabilities of all HTA partners
• Makes use of the properties of low stress single-crystalline silicon, whereactive structures are typically formed by deep reactive ion etching.
• SOI MEMS is typically used for• Silicon oscillators• Microphones, speakers• Compass, navigation, motion sensors• Sensors and actuators• Energy harvesting• Micro fuel cells, microfluidics• Other deep reactive-ion etched micro structures
Technical definition of SOI MEMS Platform
Heterogeneous Technology Alliance
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Fraunhofer(100, 150 and
200 mm)
Customer2Externalfoundry
HTA
SO
I MEM
SPL
AT
FOR
M
R&D
Prod.HTA facilities
CSEMNeuchâtel
(100 and 150 mm)
VTTEspoo
(150 mm)
CEA LETIGrenoble(200 mm)
Customer needs
Resulting technology
TRLfiles
HTA SOI MEMS Platform
Tech1 Tech3 Tech5 Tech7
Heterogeneous Technology Alliance
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BerlinBerlin
ItzehoeItzehoe
DuisburgDuisburg
ErlangenErlangen
FreiburgFreiburg
GrenobleGrenoble
MunichMunich
DresdenDresdenChemnitzChemnitz
200 mm
150 mm
M(O)EMS processing
Heterogeneous Technology Alliance
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BerlinBerlin
ItzehoeItzehoe
DuisburgDuisburg
ErlangenErlangen
FreiburgFreiburg
GrenobleGrenoble
MunichMunich
DresdenDresdenChemnitzChemnitz
Wafer-level,100~200 mm
Plastic
Packaging
Heterogeneous Technology Alliance
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BerlinBerlin
ItzehoeItzehoe
DuisburgDuisburg
ErlangenErlangen
FreiburgFreiburg
GrenobleGrenoble
MunichMunich
DresdenDresdenChemnitzChemnitz
300 mm
200 mm
150 mm
HelsinkiHelsinki
CMOS processing
Heterogeneous Technology Alliance
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BerlinBerlin
ItzehoeItzehoe
DuisburgDuisburg
ErlangenErlangen
FreiburgFreiburg
GrenobleGrenoble
MunichMunich
DresdenDresdenChemnitzChemnitz
Organics
Compoundsemicond.
LTCC
Processing on specificsubstrates
Heterogeneous Technology Alliance
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FraunhoferResponsible person:
front end CMOS-line available for 8 inch wafers
SiliconGlassCeramics (i.e. PZT, LTCC,...)Lithium Niobate / Lithium Tantalateothers
©/x/n name of equipment ©/x/n name of equipment ©/x/n name of equipmentRCA clean 1 & 2 x beaker x Arias x Arias
Piranha clean x beaker x beaker x beaker
DI-H2O flushing x beaker x Arias x Arias
Thermal Oxidation odry x CentroTherm x CentroTherm
wet x CentroTherm x CentroTherm
RTA x Heatpulse 610 x Heatpulse 610
Chemical Vapour Deposition - CVDSiO2 - low pressure x LPT x LPTSiO2 - plasma enhanced x P5000 / Oxford x P5000 / OxfordSi3N4 x LPT x LPTSi3N4 - plasma enhanced x P5000 / Oxford x P5000 / Oxford
poly-Si x LPT x LPT
SiON - plasma enhanced
TEOS - plamsa enhanced
alpha-Si - plasma enhanced
Special feature:
Name of institute:
Contact:
Applicable materials in MEMS fabrication facilityChip-Level 100 mm Wafer-Level 150 mm Wafer-Level
x x x
x x x
x x
x x
Availability for different substrates and name of equipmentChip-Level 100 mm Wafer-Level 150 mm Wafer-Level
Saphire, SiC, Ge 2'' wafer Saphire, SiC, Ge
Front-End-of-Line
• Example page of process step and equipment list tofacilitate quick and efficient response
• Access available through each partner
Process steps andequipment list
Heterogeneous Technology Alliance
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• Full processing capability for SOI-MEMS• SOI or cavity-SOI• 100 and 150 mm wafer size• Wide range of wafer bonding processes• Through-glass vias• i-line lithography (1 µm)• High-aspect ratio structures by DRIE
• Output: device wafers or diced device wafers• Internal and external options for packaging
• Future development• In-house wafer-level encapsulation• TSV
Technical description
• MEMS developments from R&D to industrializationsince 1985
• ISO-certified fabrication procedures• Activity ranging from R&D to small series
production• Highly flexible processing options• System engineering through wide application
portfolio• Dedicated staff for MEMS project management,
R&D and production• First class reliability (HRXRD and microscopy)
laboratory• World-class partners through HTA and EU projects
Competitive edge
CSEM contribution to SOI MEMS Platform
Heterogeneous Technology Alliance
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• Micromirror• Commercialized by Sercalo
• Resonators from 32 kHz to 5 MHz• Precision micromechanical parts• Production for several watchmakers
• Tunable blazed diffraction grating• Blazing, tilted, mirror surfaces
y = 0.000305x3 - 0.023882x2 + 0.004834x - 0.121196R2 = 0.999114
-80
-60
-40
-20
0
20
40
-40 -30 -20 -10 0 10 20 30 40
T [°C]
F/F o
(ppm
)
G5_#20_A_110
0.005 ppm/°C
= -23.8 ppb/°C2
= 305 ppt/°C3
70 kHz, passive compensation
CSEM MEMS Device examples
Heterogeneous Technology Alliance
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CEA Leti contribution to SOI MEMS Platform
• General process flow containing well-establishedsequences and steps
• 200 mm wafer size• Thin and thick SOI wafer bonding cavity-SOI• Multi wafers assembly• Double side wafer stepper lithography (0.4
µm)• High-aspect ratio structures by DRIE
• Output: device wafers or diced device wafers• Wafer level hermetic packaging• Thin film packaging• TSV
• Future development:• 3D integration with electronics
Technical description
• SOI Manufacturing knowhow since 1990• Industrial type processing facilities• Characterization and reliability platform• Wafer level packaging and 3D integration line• Experienced, well-trained personnel• A strong experience in industrial transfers• ISO 9001 certified• World-class partners through HTA and EU projects
Competitive edge
Heterogeneous Technology Alliance
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Inertialsensors
ResonatorsGaz sensors array 3D force sensor
TM
Leti MEMS device examples
Heterogeneous Technology Alliance
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VTT contribution to SOI MEMS Platform
• General process flow containing well-establishedsequences and steps
• SOI or cavity-SOI• 150 mm wafer size• i-line lithography (0.5 µm)• High-aspect ratio structures by DRIE• Plug-up –method and HF-vapor etching
• Design rules and standard processes (negotiable)• Output: device wafers or diced device wafers
• Encapsulation with HTA partners• Option: 3rd party encapsulation (e.g. VTITechnologies)
• Future development:• In-house wafer-level encapsulation• TSV• 200 mm wafer size
Technical description
• MEMS R&D processing since 1991 andproduction for customers since 1997
• ISO9001-certified fabrication procedures• Infrastructure meeting the standards of R&D
and small-medium scale production• Flexible practices for R&D purposes• Dedicated staff for research, wafer processing
and maintenance• Strategic partnerships with key MEMS
companies• World-class partners through HTA and EU
projects
Competitive edge
Heterogeneous Technology Alliance
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FPI Thermopile
• Magnetometerbased on theLorentz force
• Resonator• Low phase noise, Q~120 000
• Pressure sensor• CMOS monolithically integrated
• Carbon dioxide meter• Commercialized with Vaisala Oyj
VTT MEMS Device examples
Heterogeneous Technology Alliance
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FhG contribution to SOI MEMS Platform
• Technological experience for monolithically integratedMEMS and CMOS
• Clean Room for R&D and fabrication• Wafer size: 100, 150 and 200 mm• Wafer stepper lithography, mask aligner , High-aspect ratio
structures by DRIE processes• Standard SOI and epi-poly-SOI• SOI wafer bonding and patterning, cavity-SOI (bonding and
deep RIE)• Gas phase etching (HF or XeF2)• Wafer grinding and dicing (with IR-capability)• In house wafer level packaging (glass-frit, eutectic, direct,
anodic bonding, metal thermocompression)• Vacuum package (also with getter material)• Wafer level test
• High temperature 1.0µm CMOS process based on thinfilm SOI for 250°C
• Smart Power (600V) process based on thin film SOI• Single crystalline diodes based on SOI for micro
bolometers• Future development:
• integration with electronics• Thin film encapsulation
Technical description
• More than 25 years experience in MEMS R&D• Broad equipment base with flexible processes• Experienced, well-trained personnel• Customer specific processes can be developed
and integrated• Technology transfer to other fabs on customers
demand• Small scale production and medium-large scale
production support• 3 Shift operating for fast development• ISO 9001:2008 certified, ISO/TS 16949
conformal (depending on the institute)• Strategic partnerships with key MEMS
companies• World-class partners through HTA and EU
projects
Competitive edge
Heterogeneous Technology Alliance
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Vacuum packaged 2D MEMS scanning mirror(FhG ISIT Itzehoe)
SOI processing of 2D MEMSscanner (FhG IPMS Dresden)
Step-by-step switch-gear(FhG ENAS Chemnitz)
Diode Bolometer(FhG IMS Duisburg)
thermalisolation
Reflector
Si basic
Si active
FhG contribution to SOIMEMS Platform
Heterogeneous Technology Alliance
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P.M.1 P.M.2 P.M.3
Localsite
HTA 2 HTA 3
Requestby customer
Feasibility, cost
Technology/processing need
• Contact person and coordinator• Acts as a matchmaker between the specialists• Know-how of design rules• Know-how of processing capabilities and limitations• Pricing, scheduling, and resourcing
Platform Manager’s (P.M.) role
• One-stop shop• In case of multiple offers the partner who supplies
the best offer from customer point of view will beused (delivery time, experience, cost, suitability ofprocessing equipment)
• Information is also directly transferred between thespecialists (platform managers are kept informed).
Key principles of operation
Operation of the Platform
Heterogeneous Technology Alliance
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Platform Manager VTT
• Panu.Pekko@vtt.fi
Tel. +358 40 848 5029
• Deputy Jyrki.Kiihamaki@vtt.fi
Tel. +358 20 722 6306
Platform Manager CEA
• Jean-Philippe.Polizzi@cea.fr(Business case)
Tel. +3343878202022
• Bernard.Diem@cea.fr(Equipment & Process)
Tel. +33438784587
Platform Manager FhG
• Maik.Wiemer@enas.fraunhofer.de
Tel. +49 371 45001 233
Mobile +49 1733 7272 59
• Deputy Mario.Baum@enas.fraunhofer.de
Platform Manager CSEM
• Philippe.Niedermann@csem.ch
Tel. +41 32 720 5441
• Deputy Aziz.Ibzazene@csem.ch
Tel. +41 32 720 5441
Access to Platform services