Post on 17-May-2018
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RND Center, EMW / 2014-03-14
Note : All specifications are subject to change without notice. 1/5
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* Specified VSWR values are measured in +25°C. Where, the port 2 is terminated with 50Ω and WBMC is connected L1(12nH) and
L2(15nH).
40 to +85
Storage temperature [°C] 40 to +125
Low-Band Carrier Aggregation Solution(Preliminary Datasheet-Ver. 1.5)
ApplicationsMobile device antennas for low frequency Inter-band
carrier aggregation(B5&B12/B5&B17/B8&B20/B18&B28)
Wideband matching for antennas
(Bandwidth enhancement up to 300%)
Port 2 is connected to an antenna.
L1 and L2 are external matching components.
650~1000 (Low Band) / 1700~3000 (MID/HIGH Band)
*VSWR (:1) @port1 < 3 (Low Band) / < 2 (MID/HIGH Band)
Operating temperature [°C]
Features
Block Diagram
No DC power supply and software control required
Applicable to primary and secondary antennas
Simplified circuit design than that of switchable antenna
Capable of antenna sharing for variation handset models
Dimensions [mm] 2.5 X 3.0 X 0.7
Port 1 is connected to RF signal.
Specifications
Applicable frequency range [MHz]
1
2
3
4
5
6
7
8
9
10
11
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
VSW
R_S
11
Freq. [MHz]
VSWR (@Z0_p2=50 Ω)
Port2
Port1
L2
L1FEED
LOW
Band
MID/HIGH
Band
Wideband Impedance Matching Component Datasheet_Ver.1.4
RND Center, EMW / 2014-03-14Note : All specifications are subject to change without notice. 2/5
Land pattern
5 Dummy pad
[Unit : mm]
[Unit : mm]
Package outline
Pin No.1234
DescriptionPort2 (Ant.)
L2 connected portPort1 (Feed)
L1 connected port
TOP VIEW SIDE VIEW BOTTOM VIEW
1 2
3 4
2 1
4 3
5
Wideband Impedance Matching Component Datasheet_Ver.1.4
RND Center, EMW / 2014-03-14Note : All specifications are subject to change without notice. 3/5
Evaluation board Ⅰ (2-Port)
Substrate Parts list
FR4 (εr=4.4)
Thickness=0.8mm
Metal thickness=25um
Outline size = 24 X 24 mm
Typical data on EVBⅠ
[Unit : mm]
No. Value
L1 10nH
L2 10nH
Type
1005
-30
-25
-20
-15
-10
-5
0
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S-pa
ram
eter
s [dB
]
Freq. [MHz]
S11 S21
S12 s22
Port
1
L1
L2
Port
2
-200
-150
-100
-50
0
50
100
150
200
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S-pa
ram
eter
s [D
eg.]
Freq. [MHz]
S11 S21
S12 s22
Wideband Impedance Matching Component Datasheet_Ver.1.4
RND Center, EMW / 2014-03-14Note : All specifications are subject to change without notice. 4/5
Evaluation board Ⅱ (with ANT)
Antenna
Type : Inverted-F
Non-ground size = 65 X 17 mm
Substrate Parts list
FR4 (εr=4.4)
Thickness=0.8mm
Metal thickness=25um
Outline size = 65 X 135 mm
Typical data on EVBⅡ
Value
L11005
10nH
L2 10nH
No. Type
[Unit : mm]
L1
L2 0Ω
1
2
3
4
5
6
7
8
9
10
11
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
VSW
R_S
11
Freq. [MHz]
VSWR (@without WBMC)
VSWR (@with WBMC)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
Avg.
Gai
n [d
B]
Freq. [MHz]
Avg. Gain (@without WBMC)
Avg. Gain (@with WBMC)
Wideband Impedance Matching Component Datasheet_Ver.1.4
RND Center, EMW / 2014-03-14Note : All specifications are subject to change without notice. 5/5
Application note
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Part No (EMW)
Part No (EMW) EWM-3025-F0630EA0
E WM - 3025 - F0630 E A 0
(1) (2) (3) (4) (5) (6) (7)
(1) EMW
(2) series : Wideband impedance Matching component
(3) Dimensions First two disits : length(mm)
Last two disits : Width(mm)
(4) Matching band frequency F : Fequency
First two disita : 0.6GHz
Last two disits : 3 GHz
(5) Packaging P : Embossed paper tape
E : Embossed plastc tape
(6) termination N : nickel barrier
A : Au plating
(7) Version Nomber
As L2 decreases, the resonant frequency near 700 MHz increases.
Available values of L1 and L2 are 4.7 nH up to 15 nH .
Metal ground under the area of chip, L1 and L2 must be removed.
As the value of the antenna GND inductor increases, the radius of the impedance locus
increases and the resonant frequency at BandⅠ shifts toward the higher frequency side.
As the value of L1 decreases, the resonant frequency near 900 MHz shifts toward the higher
frequency side.
[Unit : mm]
TOP VIEW
Chip
L2
L1
Ant feed and GND PAD
Ant GND inductor (or 0ohm)