MOS Four-Quadrant Analog Multiplier

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MOS Four-Quadrant Analog Multiplier. Saurabh Gupta(Y4392) Vikas Kumar Sharma(Y4482). Guided By: Prof. S.Qureshi. Introduction. Various Applications Modulation Demodulation Wave Shaping Many Designs have limitations of two-quadrant multiplication only. Concept. - PowerPoint PPT Presentation

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MOS Four-Quadrant Analog Multiplier

Saurabh Gupta(Y4392)

Vikas Kumar Sharma(Y4482)

Guided By:Prof. S.Qureshi

Introduction

Various Applications Modulation Demodulation Wave Shaping

Many Designs have limitations of two-quadrant multiplication only

Concept

The basic motivation behind the design is :

This have been a favorite of analog multiplier designs but has its own limitations (later)

MOS Properties

MOSFET’s have the special property of squaring current in saturation

This can be exploited to make the sum/difference Squaring Circuits.

Design

The design has two major parts : Sum-Squaring Circuit Difference-Squaring Circuit

The difference of the two outputs gives the multiplication with some constant gain

Sum-Squaring Circuit

Schematic

Design Equations

Output Voltage ->

Max. Input voltage (for linear operation)

Simulation (Half Circuit)

Complete Circuit

Simulation Results

Highly Linear behavior

Almost zero offset

Distortion at high Input Voltages

DC Transfer Characteristics

DC Transfer Characteristics(Contd..)

Conclusion

The circuit is found to be working satisfactorily for differential input voltages up to 0.5 V

The Circuit is found to have a -0.2dB gain drop at 1 Ghz(suited for high frequency applications)

It is sensitive to component mismatch

Limitations

Body-effect neglected in the design CLM modifies the behavior from expected Component Mismatch will result in harmonic

impurity

Acknowledgement

We are thankful to Dr. Qureshi for giving us this opportunity and to our TA’s who were always there for helping us out.

References

“An MOS Four-Quadrant Analog Multiplier Using Simple Two-Input Squaring Circuits with Source Followers” by Ho-Jun Song & Choong-Ki Kim, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 25, NO. 3, JUNE 1990

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