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1
IPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
PG-TO220FP
DrainPin 2, Tab
GatePin 1
SourcePin 3
MOSFET800VCoolMOSªP7PowerTransistorThelatest800VCoolMOS™P7seriessetsanewbenchmarkin800Vsuperjunctiontechnologiesandcombinesbest-in-classperformancewithstateoftheartease-of-use,resultingfromInfineon’sover18yearspioneeringsuperjunctiontechnologyinnovation.
Features•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss•Best-in-classDPAKRDS(on)•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V•IntegratedZenerDiodeESDprotection•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)•Fullyoptimizedportfolio
Benefits•Best-in-classperformance•Enablinghigherpowerdensitydesigns,BOMsavingsandlowerassemblycosts•Easytodriveandtoparallel•BetterproductionyieldbyreducingESDrelatedfailures•Lessproductionissuesandreducedfieldreturns•Easytoselectrightpartsforfinetuningofdesigns
ApplicationsRecommendedforhardandsoftswitchingflybacktopologiesforLEDLighting,lowpowerChargersandAdapters,Audio,AUXpowerandIndustrialpower.AlsosuitableforPFCstageinConsumerapplicationsandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 800 V
RDS(on),max 0.28 Ω
Qg,typ 36 nC
ID 17 A
Eoss @ 500V 4 µJ
VGS(th),typ 3 V
ESD class (HBM) 2 -
Type/OrderingCode Package Marking RelatedLinksIPA80R280P7 PG-TO 220 FullPAK 80R280P7 see Appendix A
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
1710.6 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 45 A TC=25°C
Avalanche energy, single pulse EAS - - 43 mJ ID=2.2A; VDD=50V
Avalanche energy, repetitive EAR - - 0.36 mJ ID=2.2A; VDD=50V
Avalanche current, repetitive IAR - - 2.2 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V
Gate source voltage VGS-20-30
--
2030 V static;
AC (f>1 Hz)
Power dissipation Ptot - - 30 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screw
Continuous diode forward current IS - - 7 A TC=25°C
Diode pulse current2) IS,pulse - - 45 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=3.6A,Tj=25°C
Maximum diode commutation speed3) dif/dt - - 50 A/µs VDS=0to400V,ISD<=3.6A,Tj=25°C
Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.1 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s
1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.36mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
Gate-source leakage curent incl. zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.240.62
0.28- Ω VGS=10V,ID=7.2A,Tj=25°C
VGS=10V,ID=7.2A,Tj=150°C
Gate resistance RG - 1 - Ω f=250kHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1200 - pF VGS=0V,VDS=500V,f=250kHz
Output capacitance Coss - 20 - pF VGS=0V,VDS=500V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 38 - pF VGS=0V,VDS=0to500V
Effective output capacitance, timerelated2) Co(tr) - 490 - pF ID=constant,VGS=0V,VDS=0to500V
Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=7.2A,RG=4.7Ω
Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=7.2A,RG=4.7Ω
Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=7.2A,RG=4.7Ω
Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=7.2A,RG=4.7Ω
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 5 - nC VDD=640V,ID=7.2A,VGS=0to10V
Gate to drain charge Qgd - 15 - nC VDD=640V,ID=7.2A,VGS=0to10V
Gate charge total Qg - 36 - nC VDD=640V,ID=7.2A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=7.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=7.2A,Tf=25°C
Reverse recovery time trr - 1200 - ns VR=400V,IF=3.6A,diF/dt=50A/µs
Reverse recovery charge Qrr - 15 - µC VR=400V,IF=3.6A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 24 - A VR=400V,IF=3.6A,diF/dt=50A/µs
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 10010-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
10
20
30
40
50
6020 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
3520 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 10 20 30 400.40
0.50
0.60
0.70
0.80
0.90
1.00
5 V 5.5 V
6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
98%
typ
RDS(on)=f(Tj);ID=7.2A;VGS=10V
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
5
10
15
20
25
30
35
40
45
50
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 400
1
2
3
4
5
6
7
8
9
10
120 V640 V
VGS=f(Qgate);ID=7.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
25 °C125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
5
10
15
20
25
30
35
40
45
50
EAS=f(Tj);ID=2.2A;VDD=50V
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175700
750
800
850
900
950
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 50010-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 500 600 700 8000
1
2
3
4
5
6
7
8
Eoss=f(VDS)
10
800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
5TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
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800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
6PackageOutlines
A2
H
b
D
c
b2
E
e1
e
L
Q
øP
L1
N
D1
A
DIM
A1
DOCUMENT NO.
Z8B00003319
2.5
REVISION
06
18-03-2016
ISSUE DATE
EUROPEAN PROJECTION
1.130
0.177
MIN
0.095
0.026
0.016
0.617
0.037
0.092
0.394
0.503
0.116
0.124
0.111
0.353
2.862.42
2.54 (BSC)
5.08
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
2.95
12.78
8.97
3
29.75
0.90
0.63
1.51
16.15
3.50
3.38
3.45
13.75
10.65
9.83
MILLIMETERS
MIN
4.50
2.34
MAX
4.90
2.85
0.113
0.100 (BSC)
0.200
3
1.171
0.059
0.636
0.025
0.035
0.419
0.136
0.133
0.138
0.541
0.387
0
INCHES
0.193
MAX
0.112
SCALE
5mm
0
2.5
b1 0.0370.95 1.38 0.054
b4 0.0260.65 1.51 0.059
b3 0.0260.65 1.38 0.054
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches
12
800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
13
800VCoolMOSªP7PowerTransistorIPA80R280P7
Rev.2.0,2016-07-05Final Data Sheet
RevisionHistoryIPA80R280P7
Revision:2016-07-05,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-07-05 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
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