MCCSEMI.COMRev.3-3-12012020 1/4

BCP76

NPNPlastic-Encapsulate

Transistors

Features

• Halogen Free. “Green” Device (Note 1)• Moisture Sensitivity Level 1• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)

Collector-Base Voltage VCBO 100 V

Maximum Ratings @ 25°C Unless Otherwise Specified

• Operating Junction Temperature Range: -55℃ to +150℃• Storage Temperature Range: -55℃ to +150℃• Thermal Resistance: 83.3℃/W Junction to Ambient

Parameter Symbol Rating Unit

Collector-Emitter Voltage VCEO 80 VEmitter-Base Voltage VEBO 5 V

1.5 WPower Dissipation PD

Collector Current IC 3 A

Internal Structure

1.BASE2,4.COLLECTOR3.EMITTER

2,4

3

1

SOT-223A

D

GH

B C

F

E

MIN MAX MIN MAXA 0.248 0.264 6.30 6.70B 0.130 0.146 3.30 3.70C 0.264 0.287 6.70 7.30D 0.001 0.004 0.02 0.10E 0.114 0.122 2.90 3.10FG --- 0.071 --- 1.80H 0.009 0.014 0.23 0.35J 0.030 --- 0.75 ---

DIMENSIONS

DIM INCHES MM NOTE

0.091 2.30

1 2 3

4

TYP.

J

K 0.026 0.033 0.66 0.84

K

0.75 2.30

3.40

7.75 4.55

1.60

6.15

(mm)

Suggested Solder Pad Layout

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

MCCSEMI.COMRev.3-3-12012020 2/4

BCP76

Electrical Characteristics @ TA=25°C Unless Otherwise Specified

Collector-Base Cutoff Current

VCE=5V, IC=1A, f=100MHzTransition Frequency fT 10 MHzVCE=2V, IC=500mABase-Emitter Voltage VBE 1 VIC=500mA, IB=50mACollector-Emitter Saturation Voltage VCE(sat) 0.5 V

VCE=2V, IC=1AhFE3 25 VCE=2V, IC=3A

VCE=2V, IC=100mADC Current Gain

hFE1 25hFE2 40 160

ICBO 100 nA VCB=30V, IE=0Emitter-Base Breakdown Voltage V(BR)EBO 5 VCollector-Emitter Breakdown Voltage V(BR)CEO 80 V IC=10mA, IB=0Collector-Base Breakdown Voltage V(BR)CBO 100 V

Parameter Symbol Min Typ Max Units Conditions

IC=100µA, IE=0

IE=10µA, IC=0

MCCSEMI.COMRev.3-3-12012020 3/4

BCP76

Curve Characteristics

1 10 100010

100

1000Common EmitterVCE=2V

TA=100°C

DC

Cur

rent

Gai

n

100

Collector Current (mA)

Fig. 1 - DC Current Gain Characteristics

TA=25°C

3000 1 10 100 10001

10

100

1000

β=10

TA=100°C

Col

lect

or-E

mitt

er S

atur

atio

n Vo

ltage

(mV)

Collector Current (mA)

Fig. 2 - Collector-Emitter Saturation Voltage Characteristics

TA=25°C

1 10 100 1000200

400

600

800

1000

β=10

TA=100°C

Base

-Em

itter

Sat

urat

ion

Volta

ge (m

V)

Collector Current (mA)

Fig. 3 - Base-Emitter Saturation Voltage Characteristics

TA=25°C

1

10

100

1000

200 400 600 800 1000

Common EmitterVCE=2V

TA=100°C

TA=25°C

Base-Emitter Voltage (mV)

Col

lcet

or C

urre

nt (m

A)

Fig. 4 - Base-Emitter Voltage Characteristics

0 25 125 1500.0

0.5

1.0

1.5

2.0

Pow

er D

issi

patio

n (W

)

50 75 100

Ambient Temperature (°C)

Fig. 5 - Power Derating Curve

MCCSEMI.COMRev.3-3-12012020

Ordering Information

Device Packing

Part Number-TP Tape&Reel: 2.5Kpcs/Reel

4/4

BCP76

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