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High Power ElectronicsInnovation
Peter K. Steimer, Corporate Research Fellow, RD.S Power Electronics, ABB Switzerland Ltd., 03-06-2015
IntroductionWorld’s Consumable Resources
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sun
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earth
Hours…
“Conventional” “Future”
Bre
eder
Rea
ctor
s
References: [1] Electricity in 2030: PV’s Role, Brent P. Nelson, IEEE Energy 2030, Atlanta 2008© ABB Group June 5, 2015 | Slide 2
Solar Hydro Wind
Biomass
IntroductionThe most important Renewables – driven by the Sun
References: [2] Earth’s Annual Global Mean Energy Budget, JT Kiehl and KE Trenberth, Bulletin of the American Meteorological Society, Vol 78, No. 2, February 1997
© ABB Group June 5, 2015 | Slide 3
Energy Efficiency and New RenewablesPower SemiconductorsPower Electronics ApplicationsConclusions
© ABB Group June 5, 2015 | Slide 4
Electrical Energy SystemsEnergy efficiency and 20% new Renewables
CO2 emissions [3]: - 2/3 of the electrical power based on fossil fuels- transportation is second largest contributor
#0: Transition to gas: 2 to 3 times lower emmissions than coal
#1: Energy efficiency from primary energy to end user1. High effciency combined cycle plants (up to 60% efficient)
2. Use of waste heat in bulk power generation (up to 85% efficient)
3. Variable speed drives for pump, fan and compressor applications
4. More electric transportation for scooters, cars, buses, trains, ships
#2: New Renewables (Wind, Solar) will contribute 20% in 2030 1. up to 12% contribution of Wind (2013: 2.5%, CAGR = 10%) [4]
2. up to 7% contribution of Solar (2013: 0.4%, CAGR =15%) [5]
References: [3] World Energy Outlook 2012 (International Energy Agency)[4] Global Wind Energy Forecast 2012-2025 (IHS Emerging energy reserach)[5] Projections on solar power, 2013 (IHS Emerging energy reserach)
© ABB Group June 5, 2015 | Slide 5
# 1: Energy EfficencyPump and fan applications
60 - 65% of industrial electrical energy is consumed by motors
Substantial energy saving by variable speed drives in pump and fan applications [6]
30 to 40% energy saving, when running below nominal flow
Applies to 30% of all industrial pump and fan applications
Globally appr. 2000 TWh of annual energy saving potential
Saved power (VSD)
Losses
Useful work
Flow (%)
Power (%)
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0 10 20 30 40 50 60 70 80 90 100
References: [6] Impact of Motor Drives on Energy Efficiency, P. Barbosa, P. Wikstroem, M. Kauhanen, PCIM 07
© ABB Group June 5, 2015 | Slide 6
# 1: Energy EfficencyEnergy saving priorities
#1: ENERGY EFFICIENCY Potential / year
Power generation (installed base)
Use of waste heat 3000 TWh
Transportation (installed base)
Hybrid, 30% savings (equivalent to) 3000 TWh
Industry (installed base)
VSD for pump and fans 2000 TWh
#2: NEW RENEWABLES Potential / year
New Windpower installations
New installations in 2009 – 2020 2000 TWh
References: [7] Enabled by High Power Electronics - Energy efficiency, Renewables and Smart Grids, P. K. Steimer, ECCE Asia (IPEC) 2010
© ABB Group June 5, 2015 | Slide 7
#2 New Renewables90% Renewables scenario for 2050
Electrical energy systems with 90% renewable power generation
References: [8] SCS Energiemodell für die Schweiz, 2013 (Supercomputing Systems)
Running river Hydro
Reservoir HydroPV Solar
Wind
Pumped Hydro
Biomass
Gas
Geothermal
PV: 11 GW
Wind: 2.85 GW
PHP: 5 GW200 GWh
Thermal
week of the year© ABB Group June 5, 2015 | Slide 8
#2 New Renewables Future high penetration of renewables
Combine best of old and new electrical energy systems:
1. Fossil fuel Power plants Combined cycle and gas power plants with more power ramping
2. Extension of grid infrastructure Transmit renewables power over large distances (enabler HVDC)
Voltage stability in distribution grids (V-control, battery storage, DC )
3. Hydro power plants Pumped hydro as «new» energy storage option (4 to 8 hours typical)
4. New renewables Wind prefered due to highest energy return on invested energy
PV Solar prefered due to simple application incl. storage option
CSP attractive due to molten salt thermal storage option© ABB Group June 5, 2015 | Slide 9
Energy Efficiency and New RenewablesPower SemiconductorsPower Electronics ApplicationsConclusions
© ABB Group June 5, 2015 | Slide 10
IGCT Presspack
IGBT Presspack
High Power ConversionTrends for High Power Semiconductors
0 1 MVA 10 MVA 100 MVA 1 GW
10 kV
6.5 kV
4.5 kV
3.3 kV
1.7 kV
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Limited plasma (arc protection) infailure mode (SCFM)
High VoltageIGBT / BIGTModule
SCFM: Short-circuit failure mode© ABB Group June 5, 2015 | Slide 11
Higher Efficiency
Dynamic blockingvoltage
Low VoltageIGBT Module
Future Innovations1) 6 inch IGCT2) Enh. Trench SPT IGBT3) LinPak module4) Bi-mode IGBT & IGCT5) SiC MOSFET
Lowest Costs
High Safe Operating Area (SOA) due to corrugated base junction profile
Combined with RC technology up to 6”
Power SemiconductorsHigh performance IGCT technology (HPT)
6 inch HPT RC-IGCT 9.5 kA @ 2.8 kVdc
References: [9] The 150 mm RC-IGCT: a Device for the Highest Power Requirements, T. WikströmM. Arnold, T. Stiasny, C. Waltisberg, H. Ravener, M. Rahimo, IEEE ISPSD 2014
© ABB Group June 5, 2015 | Slide 12
0 1 2 3 40
100
200
Nominal
Cur
rent
(A)
Voltage (V)
T = 25°C T = 150°C
ET-IGBT
EP-IGBT
N-enhancement layer of SPT+ for Trench
Concept avoids hole drainage (low-on-state)
On-state and turn-off
Power SemiconductorsEnhanced Trench SPT
0 1 2 3 4 5 6
-30
-15
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Gate
Current
Gat
e vo
ltage
(V)
Time (µs)
Voltage
Cur
rent
(A)
EP-IGBT ET-IGBT
Volta
ge (V
)
Log
dopi
ng c
once
ntra
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Log
dopi
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once
ntra
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N-Enhancement layer
Emitter P+ well Plasma Increase
References: [10] The next generation high voltage IGBT modules, M. Andenna, Y. Otani, S. Matthias,C. Corvasce, S. Geissmann, A. Kopta, R. Schnell, M. Rahimo, ECCE EPE 2014
x© ABB Group June 5, 2015 | Slide 13
Power SemiconductorsTransistor versus Thyristor
Blocking voltage defines device thickness and related losses
Thyristor has inherently highest plasma in on-state© ABB Group June 5, 2015 | Slide 14
Power semiconductprsNew High Power Module Standard
C1
G1
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C1
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G2
E2
E2
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NTC
Dual Module Concept, 10 nH stray inductance
Ratings (100mm x 140 mm)
typical 1.7 kV ratings up to 2 x 1000A
typical 3.3 kV ratings up to 2 x 500A
typical 6.5 kV ratings up to 2 x 250A
Designed to accommodate Si and SiC Chips
No derating for parallel connection
References: [11] LinPak, a new low-inductive phaseleg IGBT module with easy paralleling for high powerR. Schnell, S. Hartmann, D. Trüssel, F. Fischer, A. Baschnagel. M. Rahimo, PCIM 2015
© ABB Group June 5, 2015 | Slide 15
BIGT Wafer Backside
Power SemiconductorsBi-mode IGBT technology (BIGT)
Integrates an IGBT & diode in one structure=> Reverse Conducting (RC) IGBT
Lower Losses due to larger Area for IGBT and diode (both usewhole silicon area) or
Higher power density and lower costsReferences: [12] M. Rahimo, et al., “The Bi-mode Insulated Gate Transistor (BiGT) - A Potential
Technology for Higher Power Applications”, ISPSD 2009
© ABB Group June 5, 2015 | Slide 16
Power SemiconductorsBi-mode IGCT technology (BGCT)
Integrates IGBT & diode in one structure=> Reverse Conducting (RC) IGCT
Lower lossesLow leakage currents
References: [13] The Concept of Bi-mode Gate Commutated Thyristor, U. Vemulapati, M Bellini,M. Arnold, M. Rahimo and T. Stiasny, IEEE ISPSD 2012
© ABB Group June 5, 2015 | Slide 17
Power SemiconductorsBi-mode IGCT technology (BGCT)
Optimum design proposed to be at 3:1 GCT- to Diode-segments ratio
Soft diode characteristics
Higher surge current capabilities
Higher thermal cycling capabilities
Higher junction temperatures possible due to lower the leakage current
Significantly reduced thermal resistance as the total device area is utilized in both modes of operation
4’’ BGCT technology sample (91mm)
References: [14] Improving Current Controllability in Bi-mode Gate Commutated Thyristors, Lophitis, N.; Antoniou, M.; Udrea, F.; Vemulapati, U.; Arnold, M.; Nistor, I.; Vobecky, J.; Rahimo, M., IEEE Transactions on Electron Devices, Year: 2015
© ABB Group June 5, 2015 | Slide 18
Mature Sitechnology
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High Power ConversionSiC technology
Silicon devices up to 10 kV
1. BIGT and BGCT as newhigh power device options
Wide band gap material devices
2. Unipolar 1.2 kV / 1.7 kV devices
3. Extension to 10 kV unipolar SIC devices, up to 20 kHz
4. Later bipolar SiC
Packaging
1. Higher temperature and
2. Higher voltage packaging
[kV]
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SiC
10 kV0.3 kHz
1 5 20 [kHz]
2 1.2 – 3.3 kVunipolar SIC
10 kV unipolar10 - 20 kHz
20 kV bipolar
© ABB Group June 5, 2015 | Slide 19
Energy Efficiency and New RenewablesPower SemiconductorsPower Electronics ApplicationsConclusions
© ABB Group June 5, 2015 | Slide 20
TopologiesSwitch-based Multi Level Converters
3-level inverter (NPC) is a dominant topology
For low-voltage at 1 kVLL / 1.5 kVdc
For medium-voltage up to 4.16 kVLL / 6 kVdc
Above series connection is needed (higher costs per MVA)
99.2% AC/DC efficiency (4.5 kV IGCTs, fcarr = 500 Hz,f_IGCT = 250 Hz)
Topologies:
NPC
Active NPC
Matrix-switch type NPC(SMC)
AC
AC
AC→
→
→
→=+
→=+
© ABB Group June 5, 2015 | Slide 21
TopologiesCell-based Multi Level Converters
1) Supplied cells: 2) Unsupplied cells:
2-level halfbridge2-level fullbridge cell with 6p diode rectifier
3-level fullbridge cell with 12p diode rectifier
2-level fullbridge
© ABB Group June 5, 2015 | Slide 22
TopologiesCell-based Multi Level Converters
Cell-based (with supply) Multi-level converter for higher voltages:a) 2 level cells b) 3 level cells
Transformer for potential separation needed
Up to 3 % transformer losses at 1 MVA (cost and volume optimized solution)
© ABB Group June 5, 2015 | Slide 23
TopologiesCell-based Multi Level Converters
MMC (Modular Multilevel Converter) with unsupplied halfbbridge cells
Prefered for VSC based HVDC applications due to its very high efficiency
Offers high scalability and N+1 redundancy capabilities, like thyristor solutions
2 times the active switches and 5 times the DC capacitance of a 2-level converter
99.5% AC/DC efficiency (4.5 kV IGBT, fcell = 125 Hz)
References: [15] Modulares Stromrichterkonzept für Netzkupplungsanwendungen bei hohen Spannungen, Rainer Marquardt, Anton Lesnicar, Jürgen Hildinger, ETG 2002
→ACUd
4Ud4
Ud4
Ud4
Ud4
Ud4
Ud4
Ud4
→=+
→=+Ud
2
Ud2
© ABB Group June 5, 2015 | Slide 24
- 6 inch IGCT- IGBT / BIGT
High power electronics applicationsTopologies
0 1MVA 10 MVA 100 MVA
33 kV
6.6 kV3.3 kV
1 kV
Cell-based Multi-level
Module Presspack
Switch-based (A)NPC(ML)
Low parts countBetter than 2L
Voltage scalabilityLow harmonics
© ABB Group June 5, 2015 | Slide 25
#1 Efficiency: MV DrivesSupplied cell-based Multi Level Converter
MV drive: 5-level converter based on supplied 3-level (NPC) cells
36-pulse diode rectifier
Control unitAuxiliary power for control hardware
DC-link capacitors
Inverter unit
Transformer cable connection section for top and bottom entry
Motor cable connection section for topand bottom entry
Water cooling unit with stainless steel piping
Full bridge with two RCIGCT NPC phaselegs
© ABB Group June 5, 2015 | Slide 263BHT490557R0001 Rev. A
#1 Efficiency: TransportationPower Electronics Transformer
Power Electronics Transformer: 8+1 MMC cells for 15 kV, LLC resonant DC/DC, MF Xfrms at 1.8 kHz
References: [16] D. Dujic, Power Electronics Transformer for on-board applications – an overview,Industrial session on HV and high power, APEC 2013
15kV, 17 Hz
1.5 kVDC machine
PE transformer
10’000 km ofoperation
© ABB Group June 5, 2015 | Slide 27
#2 RenewablesConverter for Offshore Windpower
Grid friendly integration of renewables
Very low harmonic limits
Grid codes - supportive behaviour during transients
Low-voltage ride-through (LVRT) capability up to 2..5 seconds
Protection of gearbox during grid-side transients and operation
PCS6000: IGCT NPC Converter for 5-7 MW offshore wind turbines© ABB Group June 5, 2015 | Slide 28
DolWin 1 (MMC transmission system based on Presspack IGBT technology)
Commissioning year: 2015
Power rating: 800 MW
No. of poles: 2
DC voltage: ±320 kV
Length of DC lines: sea 75 km
land 90 km
Reference: [17] B. Jacobson, P. Karlsson, G. Asplund, L. Harnefors, T. Jonsson: VSC-HVDC Transmission with Cascaded Two-Level Converters,Cigré session 2010, paper B4-110
#2 New RenewablesHVDC connection for Offshore Windpower
© ABB Group June 5, 2015 | Slide 29
Grimsel LakeGrimsel 2 PSP
Oberaar Lake
Variable speed Pumped Hydro
#2 New Renewables Variable speed Pumped Hydro
The converter-fed synchronous machine (CFSM) is the future variable speed solution (replacing complex DFIM)
First retrofit reference rated at 100 MVA in commerical operation (since April 13)
Converter gridside transformer
3-levelGrid side inverters
3-levelMachine side
inverters
Voltagelimiting units
Converter machineside transformers
DC-linkfilter
Bypassdisconnector
SynchronousMotor / Generator
220 kV / 50 Hz
Grid side disconnector
Machine side disconnector
13.5 kV / 50 Hz
DC-linkcircuit
S = 100 MVAU = 13.5 kV
GeneratornN = 750 rpm
Pumpn = 450…765 rpm
Large Drive PCS 8000 3.3kVMedium Voltage Static Frequency Converters
S = 2x 50 MVAF1 = 50 Hz
F2 = 0...51Hz
A AA
A AAA AA
Converter Block
HP Filter
+
-
0
A AA
Converter Block
HP Filter
+
-
0
A AA
A AA
Transformers
Frequencyconverter
CoolingUnit
References: [18] 100 MW Full-Size Converter in the Grimsel 2 Pumped Storage Plant, Hans Schlunegger, Andreas Thöni, Hydro 2013 conference, Innsbruck
© ABB Group June 5, 2015 | Slide 31
#2 New Renewables Variable speed Pumped Hydro
DC link filter Converter block
100 MW NPC-based power converter at Grimsel 2
© ABB Group June 5, 2015 | Slide 32
#2 New Renewables Variable speed pump operation at Grimsel 2
© ABB Group June 5, 2015 | Slide 33
Excellent LVRT capability
Supports grid stability during serious grid disturbances
Independent P/Q control
Voltage support du-ring pump or turbineoperation and instand-by
Primary control functions
LVRT: Low-voltage ride-through
#2 New Renewables Grid Code Compatibility of Full converter solution
© ABB Group June 5, 2015 | Slide 34
Energy Efficiency and New RenewablesPower SemiconductorPower Electronics ApplicationsConclusions
© ABB Group June 5, 2015 | Slide 35
High Power ElectronicsConclusions
Electrical power system
1. Optimum co-existance of the old AND new electrical energy systemneeded to mitigate the very costly CO2 impact
Power Semiconductors and Topologies
1. Silicon based IGBT, IGCT, BIGT and BGCT are todays choices
2. NPC and MMC as todays dominant topologies with Silicon
3. SiC based devices to grow with selected volume applications
Applications Drivers
1. Energy effciency is #1 to minimize our CO2 footprint (short-term)
2. New Renewables are #2 to miminize our CO2 footprint (long-term)
Strong driver for multiple high power electronics applications(Power Conversion, Storage, Transmission)© ABB Group
June 5, 2015 | Slide 36
© ABB Group June 5, 2015 | Slide 37