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Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for the ATLAS ID Upgrade ( H. Sadrozinski, P. Allport, N. Unno +25 Institutions)).
“The goal of the program is the industrial pre-production of SSD optimized for sLHC operation and includes both short and long strips.”
“In addition, the RD activity should take into account the needs of the module development program and plan to have sensors available on the required time-scale.”
Outline:
1. Framework of R&D Program
2. Recent Results
3. Future Plans
4. ATLAS07 Submission to HPK
5. Budget
SSD Development for ATLAS Upgrade Tracker
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Goal: Identify optimal SSD technology and start commercial production.
P-type promise higher luminosity reach (underdepleted operation)
Concentrate on test pre-rad and post-rad
Electrical Characterization
Charge Collection: CC-V
Devices:
SMART SSD (RD50) Status: p, and n irradiations done, in test
RD50 run with commercial 6” foundry (Micron), n and p irradiation underway
Start work with high volume supplier: HPK
ATLAS06: pilot run for investigation of geometry, n and p planned
ATLAS07: in preparation, PRR at HPK (June) and CERN (ID week July)
SSD Development for the ATLAS Upgrade Tracker:Overview
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Design for: 1*1015 neq/cm2 short strips, 4*1015 neq/cm2 long strips (includes 2x safety factor)New: p-type, neutrons
sATLAS Fluences for 3000fb-1
1.E+12
1.E+13
1.E+14
1.E+15
1.E+16
1.E+17
0 20 40 60 80 100 120
Radius R [cm]
Flue
nce
neq/
cm2
All: RTF Formulan (5cm poly)pionproton
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Previous data: Liverpool FZ allows low initial depletion voltage (<100V) >10 k-cm FZ, Good uniformity, Annealing affects under control
MCz vs. FZ
Adopt p-type FZ as Baselinecontinue to investigate high-resistivity p-type MCz
G. Casse et alVCI ‘04
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Surface condition: Interstrip capacitance and Isolation pre-rad and after TIDi-V and breakdown behavior (STD6 Contribution)
Charge collection: Beta source (~30 Hz), 100ns shaping time pos and neg signals.connect electrical parameter C-V with MIP Charge collection(RESMDD06 Contribution)
Annealing studies:Allow for elevated temperature
Development of tools to support testing:
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
C(V) ~ 1/dCCE(V) ~ d expected collected charge = 3.5 fC*Co/C(V)At low temps, use low frequency! RT: 10 kHz,-10o C: 400 Hz, -20o C: 250 Hz
M. Petterson et al.RESMDD06
Depletion: C-V and CCE: Temp and Frequency
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
SCIPP Measurements on p-type Mczwith neutron irradiated sensors.Absolute prediction of 1/CAgrees well with CCE
Neutrons
CCE / C-V W09 p Mcz 1.7e-15 n/cm^2
0
0.5
1
1.5
2
2.5
0 200 400 600 800 1000Bias voltage [V]
Cha
rge
[fC]
cce
1/C -20C 250 Hz
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Caveats:Binary vs. Analog (Single-strip vs. Sum?)Median vs. Most probableFZ vs. MCz, Starting Depletion Voltage100 ns vs. 25 ns
Neutrons vs. Protons?
Collected charge
0.0E+00
5.0E+03
1.0E+04
1.5E+04
2.0E+04
0 200 400 600 800 1000Bias Voltage
Col
lect
ed c
harg
e [e
-]Casse et al: FZ, p neq=1.9e15Petterson et al: MCz n 1.7e15 (prelim)Casse et al: FZ, n 1.5e15
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Short strips:At target fluence and 500V Bias:Sufficient yield for good signal-to-noise
Charge collectionCollected charge
Vbias =800V
0.0E+00
5.0E+03
1.0E+04
1.5E+04
2.0E+04
2.5E+04
0.E+00 1.E+15 2.E+15 3.E+15 4.E+15 5.E+15Fluence [1/cm2]
Col
lect
ed c
harg
e[e-
]
Casse et al: FZ, p irr.Petterson et al: MCz n irra(prelim)Casse et al, FZ, n irradiationPetterson et al: MCz n irra(prelim)
Collected chargeVbias = 500V
0.0E+00
5.0E+03
1.0E+04
1.5E+04
2.0E+04
2.5E+04
0.E+00 1.E+15 2.E+15 3.E+15 4.E+15 5.E+15Fluence [1/cm2]
Col
lect
ed c
harg
e[e-
]
Casse et al: FZ, p irr.Petterson et al: MCz n irra(prelim)Casse et al, FZ, n irradiationPetterson et al: MCz n irra(prelim)
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Evidence for Double-Junction instead of “Inversion”.
Wafer: n MCz
1/C SMART n MCz Neutron/Proton irradiated
0
0.005
0.01
0.015
0.02
0 100 200 300 400 500 600
Bias Voltage [V]
1/C
[pF^
1]
176-4 (-20C) n 5.3e14 Louvain
176-2 (-20C) n 4e14 Louvain
176-2 unirradiated
187-4 (-10C) p 1.4e14
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Non-uniform doping density in MCz: Simple simulation of parallel capacitors with different depletion voltagesreproduces the 1/C2 curves.
Wafer: MCz SMART
1/C^2 W044-4 10kHz Vdep: 46.0 -> 77.6 V
1.5E-04
1.7E-04
1.9E-04
2.1E-04
2.3E-04
2.5E-04
40 50 60 70 80Bias Voltage [V]
1.C^
2 [p
F-2]
10kHz
sim2
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
MCz Wafer Uniformity with CCE: SMART vs. Micron Median Q
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150Bias Voltage [V]
med
Q [f
C]
detector end
detector middle
detector front
Med Q Micron p-type MCz (2552-7-13)
0
1
2
3
4
0 200 400 600 800Bias Voltage [V]
med
Q [f
C]
edgePMFEcenter1/C norm
Med Q: Micron p-type FZ (2551-7-13)
0
1
2
3
4
0 50 100 150Bias Voltage [V]
Med
Q [f
C]
centerfar edgePMFE edge1/C norm
SMART:4.5 cm long
Micron:6 cm long
Charge collection at 3 positions along strips:
Micron has excellent uniformity along strips and across the wafer
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
New data: CCE annealing for n-type and p-type MCz similar time structure as C-V
Annealing
1000min @60 oC = 514 days @RT
M. Petterson et alIrradiated with 26 MeV p to ~2*1014 cm-2
Binary readout 100ns, 90Sr beta source
Bias voltage for 90% efficiency
020406080
100120140160180
1 10 100 1000 10000 100000Anneal time @60C [min]
Bia
s vo
ltage
[V]
p MCz 253-4
Bias Voltage for 90% effiency
020406080
100120140160180200
1 10 100 1000 10000 100000Anneal time @60C [min]
Bia
s vo
ltage
[V]
n MCz 187-4
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Continued Development of tools to support testing:Mate SCT hybrid (20ns ) with custom quick-disconnect Sensor boardWork on SCT DAQ: negative pulsesImprove thermal management
Testing of MICRON mini-SSD pre- and post-radIssue: Evaluate role of resistivity of waferFZ: ~20k-cm (Micron) vs. 8 k-cm (HPK), MCz ~ 2k-cm (Micron and HPK) Initially Depletion Voltage: FZ 60 V (Micron) vs. 140 V (HPK) MCz ~ 500 V (Micron and HPK)
Testing of ATLAS06, ATLAS07 (HPK), ATLASxx mini-SSDSurface condition pre- and post-rad (p, n, ): Optimize isolation and capacitanceCharge collection pre- and post-rad (p, n, ): Optimize wafer resistivity
Planned activity in FY ’08 and beyond
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Allows both electrical and dynamic testing of sensors pre-rad/post-rad/post-annealBonding is bottle-neck: use connectors!
Quick-Disconnect Sensor Board
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Cooling of irradiated sensors required both for electrical and dynamic testing.Present mode of spilling LN2 into a thermal enclosure is reliable, but clumsy / wasteful.
Peltier based system promises good uniformity.
Peltier based Cooling System
Temp vs. Heat Removed
Chiller 0C, Peltier Current: 4.40 Amps
-25
-24
-23
-22
-21
-20
0 0.2 0.4 0.6 0.8
Heat Input [W]
Tem
pera
ture
[o C]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Test Program: with 1 cm x 1 cm test structures
Testing of ATLAS Upgrade Sensors
Company un-diced wafers i-V and C-V, processing control test structures, R(poly).Single-strips: C(coupl), R(bias), shorts
ATLAS SSD / Test diodes Electrical: both pre-rad and post-radi-VC-VCintRintR(Al)
CCE post-rad only ?Beta sourceLaserTSC
Irradiationsn Lubljana April - Dec.p CERN May - Oct PSI August '07
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: Neutrons
Lubljana: (Marko Mikuz)
- available all year upon short notice (week)
- flux > 1012 n_eq/(cm2.s), downgradeable by reactor power
- TID ~ 100 kRad for 1014 n_eq/cm2 (> kRad/s)
- sample width ~60 mm, length ~150 mm
- bias & cooling - difficult
Suitable for irradiations of bare sensors, depending on the design we adopt (width !).
For modules need to be careful, activation issues might be serious at the target fluences. The sensors (Si, Al) cool down quite efficiently (days), so mounting on evaluation boards/modules could be done post-irradiation.
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: Neutrons
Louvain: (Otilia Militaru)
UC Santa Cruz had two runs in late 2006 (2*1014 and 2*1015 ).
Damage coefficients about 2x larger than at 1 MeV.
Good dosimetry possible
TID ~1%?
Cooling possible
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: PionsPSI in August 2007 with RD50, CMS
Contact: Tilman Rohe, PSI
Target fluence about 2*1015
Limited number of small devices ~40?
Irradiation Program: ProtonsRD50 Runs in 2007: May, July, September
Contact: Michael Moll, Maurice Glasser
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07• Purpose
– Full square– Usage in 2008
• Delivery target– Dec. 2007
• Wafer– 150 mm p-FZ(100)– 320 µm thick
• n-strip isolation– Individual p-stop
• Stereo– 40 mrad– Integrated in half
area– Dead area: 2 mm • Strip segments
– 4 for SS (but still true for 4% limit?)– LS: segments wire-bonded
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 specification ATLAS07
Wafer size 150 mm Thickness 320 µm Orientation <100> Type P Ingot FZ Resistivity >3 k cm Outer dimension 98.99x98.99 mm2
Sensitive implant edge dimension 96.99x96.99 mm2
Strip segments 4 Strip segement length (approximate) 24 mm Strip implant N Strip pitch 75.50 µm Strip implant Width 16 µm Strip bias resistor Polysilicon Strip bias resistnace (Rb) 1.5+/-0.5 M Strip readout coupling AC Strip readout metal Pure Aluminium Strip readout metal width 20 µm Strip AC coupling capacitance >20 pF/cm Strip isolation >2xRb at 1/2xVop Strip isolation method Individual p-stop Gap between strip segments <160µm (rail)
<70µm (no rail) Design operation voltage 800V Microdischarge onset voltage >600V Maximum operation voltage (*) 600V Radiation tolerance 9x1014 1-MeV neq/cm2
(*) The voltage rating of the extenal high voltage cable is 500V and tested 1 KV
• Issues remaining– location of Bonding
pads – Most likely to add
one more pad at centre of strip
• 5 pads per strip
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 Fabrication
• Schedule from HPK– Delivery Dec 07– Fabrication incl. testing (3 m) Sep 07– Acquiring wafers (2 m) Jul 07– Designing masks (2 m) Jul 07– Finalizing specifications in Jul 07– Wafer specification Beg Jun
07• p-type FZ vs. MCZ
• Financing– Pro rata basis
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 Review• Purpose
– To review and finalize the design and specification of the upgrade silicon microstrip sensor to be fabricated by the end of 2007 (ATLAS07)
– ATLAS07 serves sensor needs in 2008• till ATLAS08 comes in the end of 2008
• Review date– 2nd July, during the ID week at CERN
• Steps to the review– Mid May: Pre-meeting– 18-19 June: Pre-meeting at KEK
• 20 June: Meeting with HPK in Japan– 2nd July: Review date
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Sensor Technology BudgetFY 2008 WBS 4.1.1.2.1Labor Enginer Tech Tech UG Tech Tech
Activity FTE Layout Assembly Assembly Testing Testing TestingSSDShort strip SSD SSD SamplesTest structuresElectrical Characterization 0.45 0.23 0.23Assembly 0.28 0.28Efficiency Measurements 0.57 0.28 0.28Irradiations 0.28 0.14 0.14Electrical Characterization 0.28 0.14 0.14Efficiency Measurements 0.57 0.28 0.28DAQ 0.50 0.25 0.25Sensor BoardDesign+Layout 0.11 0.11Fab Parts Test 0.11 0.11Assembly 0.07 0.07Total Labor 3.24 0.11 0.07 0.40 1.33 0.68 0.65
Labor 133.552Domestic travel 4.000Foreign Travel 6.000M&S 37.000Total direct 180.552Indirect 26% 46.944Total FY2008 227.496