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Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 1
FMD: Silicon multiplicity detectors
FMD: Silicon multiplicity detectors
Thermal simulation meeting,
CERN, 11 November 2002Børge Svane Nielsen
Niels Bohr Institute
1. Geometry of FMD, T0 and V0 detectors2. Material constants for FMD3. Heat dissipation of FMD
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 2
FWD detectors layoutFWD detectors layout
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 3
Si1, T0_r & V0_r layoutSi1, T0_r & V0_r layout
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 4
Si2 layoutSi2 layout
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 5
Si3, T0_l & V0_l layoutSi3, T0_l & V0_l layout
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 6
CERN maquette 1:1CERN maquette 1:1
Si1 (inner)Si1(outer)
V0-R T0-R
Absorber
ITS-pixels
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 7
FMD ring layoutFMD ring layout
256
Inner:
Rin=4.2 cm
Rout=17.2 cm
Outer:
Rin=15.4 cm
Rout=28.4 cm
20x2x128=5120
10x2x256=5120
128Full FMD =Full FMD = 3 inner rings +3 inner rings + 2 outer rings2 outer rings
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 8
Si1 assemblySi1 assembly
Si detectors
Support plates
Read-out electronics card on support plate back side
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 9
Hybrid with Viking chipsHybrid with Viking chips
VA preamp+shaper: 128 ch
Connector(s) forpower, control, read-out
Other components
Other components
Hybrid cards contain: FE chips Bias voltages distribution Gate/strobe distribution Read-out clock distribution Detector bias connection
Read-out cards contain: Bias voltages generation Gate/strobe distribution Read-out clock generation Remote connections
Si detector
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 10
FMD Material constantsFMD Material constants
Material type and thickness of one Si detector ring:
Layer Material ThicknessHeat
conductivity
(W/m·K)
Density
(kg/m3)
Specific heat
(J/kgK)
Silicon detector
Si 0.3 mm 84 2330 678
Hybrid Al2O3 0.5 mm 35 3970 880
FE electronics
air + chips10 mm
(mostly air)
SupportCarbon fibre or aluminium honeycomb
20.5 mm C or Al
+ 10 mm air
C: 24
Al: 222
C: 2200
Al: 2700
C: 691
Al: 900
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 11
FMD Material constantsFMD Material constants
Material type and thickness of one Si detector ring:
Layer Material ThicknessInteraction
lengthRadiation
length
Silicon detector
Si 0.3 mm 0.6 · 10-3 0.3 · 10-2
Hybrid Al2O3 0.5 mm 2.0 · 10-3 1.0 · 10-2
FE electronics
air + chips10 mm
(mostly air)
SupportCarbon fibre or aluminium honeycomb
20.5 mm C or Al
+ 10 mm air
C: 2.6 · 10-3
Al: 2.5 · 10-3
C: 0.5 · 10-2
Al: 1.1 · 10-2
Total thickness of one Si ring: C: 5.2 · 10-3 I 1.8 · 10-2 X0 Al: 5.1 · 10-3 I 2.4 · 10-2 X0
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 12
FMD electronicsFMD electronics
FMD channel count
Note: We are looking into increasing the number of strips, but use more integrated FE chips - red values.
In the following, I assume the new numbers.
Segments (wafers)
Phi sectors
Radial sectors
HybridsChips/
hybridFE chips FE channels
Si1 inner 10 20 (256) 512 10 (16) 8 (160) 80 (5,120) 10,240
Si1 outer 20 40 (128) 256 20 (8) 4 (160) 80 (5,120) 10,240
Si2 inner 10 20 (256) 512 10 (16) 8 (160) 80 (5,120) 10,240
Si2 outer 20 40 (128) 256 20 (8) 4 (160) 80 (5,120) 10,240
Si3 10 20 (256) 512 10 (16) 8 (160) 80 (5,120) 10,240
Total system 70 140 70 (720) 360 (25,600) 51,200
Thermal simulation, CERN, 11 Nov 2002 Børge Svane Nielsen, NBI 13
Heat dissipationHeat dissipation
Heat dissipated by FE electronics of one Si detector ring:
VA1TA preamp chip (128 channels): 150 mW 80 chips = 12 W / ring
For simulation: assume uniform distribution on hybrid surface (towards support plate)
Read-out electronics and power distribution: 5 W / ring
For simulation: assume concentrated in 2 locations near outer radius