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ENGI 242/ELEC 222 January 2004 BJT Small Signal Model 1 Transistor Modeling ENGI 242 ELEC 222 January 2004 ENGI 242/ELEC 222 2
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ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 1

Transistor Modeling

ENGI 242ELEC 222

January 2004 ENGI 242/ELEC 222 2

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 2

January 2004 ENGI 242/ELEC 222 3

Hybrid Equivalent Circuit for BJT

1 11 12 1

2 21 22 2

V h h I =

I h h V

January 2004 ENGI 242/ELEC 222 4

h-parameter Model for Common Emitter

Parameters from the spec sheet (x = lead based on circuit configuration):h11 = hix

h12 = hrx

h21 = hfx

h22 = hox

hrx and hfx are dimensionless ratioshix is an impedance <Ω>hox is an admittance <S>

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 3

January 2004 ENGI 242/ELEC 222 5

Short Circuit Input Impedance

January 2004 ENGI 242/ELEC 222 6

Open Circuit Reverse Transfer Ratio

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 4

January 2004 ENGI 242/ELEC 222 7

Short Circuit Forward Transfer Ratio

January 2004 ENGI 242/ELEC 222 8

Open Circuit Output Admittance

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 5

Transistor ModelingHybrid Model Pi

ENGI 242ELEC 222

January 2004 ENGI 242/ELEC 222 10

HYBRID MODEL PI

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 6

January 2004 ENGI 242/ELEC 222 11

HYBRID MODEL PI PARAMETERS• Parasitic Resistances• rb = rb’b = ohmic resistance – voltage drop in base region

caused by transverse flow of majority carriers, 50 ≤ rb ≤ 500

• rc = rce = collector emitter resistance – change in Ic due to change in Vc, 20 ≤ rc ≤ 500

• rex = emitter lead resistance – important if IC very large, 1 ≤ rex ≤ 3

January 2004 ENGI 242/ELEC 222 12

HYBRID MODEL PI PARAMETERS• Parasitic Capacitances• Cje0 = Base-emitter junction (depletion layer) capacitance,

0.1pF ≤ Cje0 ≤ 1pF• Cµ0 = Base-collector junction capacitance, 0.2pF ≤ Cµ0 ≤

1pF• Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF• Cje = 2Cje0 (typical)• ψ0 =.55V (typical)• τF = Forward transit time of minority carriers, average of

lifetime of holes and electrons, 0ps ≤ τF ≤ 530ps

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 7

January 2004 ENGI 242/ELEC 222 13

HYBRID MODEL PI PARAMETERS• rπ = rb’e = dynamic emitter resistance – magnitude varies to

give correct low frequency value of Vb’e for Ib

• rµ = rb’c = collector base resistance – accounts for change in recombination component of Ib due to change in Vc which causes a change in base storage

• cπ = Cb’e = dynamic emitter capacitance – due to Vb’e

stored charge• cµ = Cb’c = collector base transistion capacitance (CTC)

plus Diffusion capacitance (Cd) due to base width modulation

• gmVπ = gmVb’e = Ic – equivalent current generator

January 2004 ENGI 242/ELEC 222 14

Hybrid Pi Relationships

Cm

T

T

Cm

C B

I g = V k T V = = 26mV @ 300 K

q I g =

26mV (26mV) ( ) 26mV r = =

I Iπ

°

β

β = gm rππ

c m ππ

β v i = = g vr

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 8

January 2004 ENGI 242/ELEC 222 15

Hybrid Pi Relationships

January 2004 ENGI 242/ELEC 222 16

HYBRID MODEL PI MID BAND

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 9

January 2004 ENGI 242/ELEC 222 17

HYBRID MODEL PI HIGH FREQ.

January 2004 ENGI 242/ELEC 222 18

Common Emitter Amplifier

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 10

January 2004 ENGI 242/ELEC 222 19

Common Emitter Amplifier – DC Bias Model

January 2004 ENGI 242/ELEC 222 20

Common Emitter Amplifier - Complete Hybrid PI

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 11

January 2004 ENGI 242/ELEC 222 21

Mid Band Hybrid PI Common Emitter

January 2004 ENGI 242/ELEC 222 22

Equivalent Circuit to find ZO

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 12

January 2004 ENGI 242/ELEC 222 23

High Frequency Hybrid PI CE Amp

January 2004 ENGI 242/ELEC 222 24

Common Emitter Amplifier

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 13

January 2004 ENGI 242/ELEC 222 25

CE Amplifer Example output

January 2004 ENGI 242/ELEC 222 26

Common Emitter Amplifier

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 14

January 2004 ENGI 242/ELEC 222 27

CE Amplifer Example output

January 2004 ENGI 242/ELEC 222 28

Emitter Follower

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 15

January 2004 ENGI 242/ELEC 222 29

Emitter Follower

January 2004 ENGI 242/ELEC 222 30

Emitter Follower

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 16

January 2004 ENGI 242/ELEC 222 31

Emitter Follower

January 2004 ENGI 242/ELEC 222 32

Emitter Follower

ENGI 242/ELEC 222 January 2004

BJT Small Signal Model 17

January 2004 ENGI 242/ELEC 222 33

Common Base

January 2004 ENGI 242/ELEC 222 34

Common Base


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