http://www.weitron.com.twWEITRON
C945NPN Transistors
Lead(Pb)-FreePbTO-92
12
3
1. EMITTER2. COLLECTOR3. BASE
1/4 08-Feb-06
°C
°CJunction Temperature Tj
TSTG
+150
0.4
Storage Temperature -40 to + 150
Collector Output CapacitanceVCB = 10V, IE = 0, f = 1MHz
Noise figureVCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz
TransitionFrequenceVCE = 6V, IC = 10mA, f = 30MHz
--
-
--
- -
-
700
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
7040
CLASSIFICATION OF hFE1
Rank
Range
YO
70-140
0.3
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VBE(sat) V1.0
200
- 3.0 pF-
4.0 10 dB-
BLGR
120-240 200-400 350-700
Cob
NF
MHz
VCE(sat)
fT
Base-Emitter VoltageIC=100mA, IB=10mA
hFE1hFE2
DC Current GainVCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA
Collector-Emitter Saturation VoltageIC=100mA, IB=10mA
C945
2/4 08-Feb-06
Characteristics Symbol Min Typ Max Unit
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C945
3/4 08-Feb-06
FIG1. Total Power Dissipationvs Ambient Temperature
FIG.2 Collector Current vs Collectorto Emitter Voltage
FIG.4 Gain Bandwidth Product vsEmitter Currentvs Collector Current
FIG.3 Collector and Bade Saturation Voltage
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DimABCDEGHJKL
Min3.301.100.380.364.403.434.30
MaxTO-92
TO-92 Outline Dimensions unit:mm
3.701.400.550.514.70
-4.70
2.6414.50
1.270TYP
E
C
H
A
BD
L
J
K
G
2.4414.10
C945
4/4 08-Feb-06