1 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

ITRS Public ConferenceEmerging Research Devices

Jim Hutchby – SRCDecember 14, 2011

2011 ERD Chapter

2 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

Hiro Akinaga AIST Tetsuya Asai Hokkaido U. Yuji Awano Keio U. George Bourianoff Intel Michel Brillouet CEA/LETI John Carruthers PSU Ralph Cavin SRC Chorn-Ping Chang AMAT An Chen GLFOUNDRIES U-In Chung Samsung Byung Jin Cho KAIST Sung Woong Chung Hynix Luigi Colombo TI Shamik Das Mitre Simon Deleonibus LETI Bob Doering TI Tetsua Endoh Tohoku U. Bob Fontana IBM Paul Franzon NCSU Akira Fujiwara NTT Mike Garner Consultant Dan Hammerstrom PSU Wilfried Haensch IBM Tsuyoshi Hasegawa NIMS Shigenori Hayashi Matsushita Dan Herr SRC Toshiro Hiramoto U. Tokyo Matsuo Hidaka ISTEK Jim Hutchby SRC Adrian Ionescu EPFL Kiyoshi Kawabata Renesas Tech Seiichiro Kawamura Selete Suhwan Kim Seoul Nation U Hyoungjoon Kim Samsung Atsuhiro Kinoshita Toshiba Dae-Hong Ko Yonsei U. Hiroshi Kotaki Sharp Mark Kryder INSIC

Franz Kreupl Tech. U. Munich Zoran Krivokapic GLOBALFOUNDRIES Kee-Won Kwon Seong Kyun Kwan U. Jong-Ho Lee Hanyang U. Thomas Liew ASTAR DSI Lou Lome IDA Matthew Marinella SNL Hiroshi Mizuta U. Southampton Kwok Ng SRC Fumiyuki Nihei NEC Dmitri Nikonov Intel Kei Noda Kyoto U. Ferdinand Peper NICT Er-Xuan Ping AMAT Yaw Obeng NIST Yutaka Ohno Nagoya U. Dave Roberts Nantero Shintaro Sato Fujitsu Labs Barry Schechtman INSIC Sadas Shankar Intel Takahiro Shinada Waseda U. Masayuki Shirane U. Tokyo Kaushal Singh AMAT Satoshi Sugahara Tokyo Tech Shin-ichi Takagi U. Tokyo Ken Uchida Toshiba Thomas Vogelsang Rambus Yasuo Wada Toyo U. Rainer Waser RWTH A Franz Widershoven NXP Jeff Welser NRI/IBM Philip Wong Stanford U. Dirk Wouters IMEC Kojiro Yagami Sony David Yeh SRC/TI Hiroaki Yoda Toshiba In-K Yoo SAIT Victor Zhirnov SRC

Emerging Research Devices Working Group

3 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

year

Beyond CMOS

Elements

Existing technologies

New technologies

Evolution of Extended CMOS

More Than Moore

4 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

Changed Scope of Emerging Research Devices Chapter

♦ New More-than-Moore Section added – Focused on RF ♦ Emerging Research Memory Devices section broadened

in 2011 to include: New “Storage Class Memory” Subsection New “Memory Select Device” Subsection

♦ Emerging Research Logic changed Transitioned n-InGaAs & p-Ge alternate channel

MOSFETs to PIDS & FEP. Synchronized better with the Nanoelectronics

Research Initiative (NRI)♦ Expanded technology Benchmarking section♦ Expanded Architecture Section

5 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 ERD ChapterAssessing Emerging Research --

Memory Devices Logic Devices More-than-Moore Devices Architectures

Benchmarking Emerging Devices

6 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

Emerging Memory Technologies

2009 Memory Technology Entries

Electronic Effects Memory− Charge trapping− Metal-Insulator Transition

(Mott Device)

Spin Transfer Torque MRAMNanoelectromechanical RAMNanowire PCMMacromolecular (Polymer)

Nanoionic Memory−Electrochemical memory−Valence change memory− Fuse/Antifuse (Thermochemical memory)Molecular Memory

Ferroelectric Gate Memory

7 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

Emerging Memory Technologies

2011 Memory Technology Entries

Electronic Effects Memory− Charge trapping− Metal-Insulator Transition

(Mott Device)

Spin Transfer Torque MRAMNanoelectromechanical RAMNanowire PCMMacromolecular (Polymer)

Ferroelectric Effects Memory–Fe (gate)FET Memory–Ferroelectric Barrier Memory

Redox Resistive Memory−Electrochemical memory−Valence change memory− Fuse/Antifuse (Thermochemical memory)Molecular Memory

8 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

ERD/ERM Memory Technology Assessment Workshop

ITRS ERD/ERM identified two emerging memory technologies for accelerated research & development:

1) STT-MRAM and 2) Redox Resistive RAM

Redox Memory Cell STT-Memory Cell

9 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

One Diode – One Resistor (1D1R) Memory Cell

H-S. P. Wong – Stanford U.

Select Device

Select Device

MemoryDevice

10 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

11 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 ERD Chapter Emerging Memory Devices Emerging Logic Devices More-than-Moore Devices Benchmarking and Assessing

Emerging Devices Emerging Architectures

12 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2009 Logic Technology Tables

Table 12a – Extending MOSFETs to the End

of the Roadmap_______

CNT FETsGraphene nanoribbon FETs

III-V n&p-Channel MOSFETs

Ge p&n-Channel MOSFETsNanowire FETs

Non-conventional Geometry Devices

Table 12b- UnconventionalFETS, Charge-based

“Beyond CMOS” Devices _____________

Spin FET& Spin MOSFETNegative Cg MOSFET

Atomic SwitchNEMS switchTunnel FET

I-MOSSET

Table 12c - Non-FET, Non Charge-based “Beyond

CMOS” Devices _______________

Moving domain wall devicesPseudo-spintronic Devices

Nanomagnetic Logic(M:QCA)Molecular Switch

BiSFET

13 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 Logic Technology Tables

Table 12a – Extending MOSFETs to the End

of the Roadmap_______

CNT FETsGraphene nanoribbon FETsIII-V n-Channel MOSFETsGe p-Channel MOSFETs

III-V p-Channel MOSFETsGe n-Channel MOSFETs

Nanowire FETsTunnel FET

Non-conventional Geometry Devices

Table 12b- UnconventionalFETS, Charge-based

“Beyond CMOS” Devices_____________

Spin FET& Spin MOSFETNegative Cg MOSFET

Atomic SwitchNEMS switch

Mott FETTunnel FET

I-MOSSET

Table 12c - Non-FET, Non Charge-based ‘“Beyond

CMOS” Devices _______________

Spin Torque Majority GateSpin Wave Devices

Moving domain wall devicesPseudo-spintronic Devices

Nanomagnetic Logic(M:QCA)All Spin Logic

Molecular SwitchExcitonic FET

BiSFET

14 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

ERD/ERM Logic Technology Recommended Focus:Carbon-based Nanoelectronics – Carbon Nanotubes and Graphene

Conventional Devices

Cheianov et al. Science (07)

Graphene Veselago lense

FETBand gap engineered Graphene nanoribbons

Nonconventional Devices

Trauzettel et al. Nature Phys. (07)

Graphene pseudospintronics

Son et al. Nature (07)

Graphene Spintronics

Graphene quantum dot

(Manchester group)

P. Kim – Columbia U.

15 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 ERD Chapter Emerging Memory Devices Emerging Logic Devices More-than-Moore Devices Benchmarking and Assessing

Emerging Devices Emerging Architectures

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Wireless underlying architecture / functions

LNA

LO

ADC

PA DAC

LO

spin-torque oscillator

nanoradioIntermediate level

function

Lower level functions

NEMS nanoresonator

filter oscillator mixer

graphene

011001010…

control

rf wave

Higher level function

17 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 ERD Chapter Emerging Memory Devices Emerging Logic Devices More-than-Moore Devices Benchmarking and Assessing

Emerging Devices Emerging Architectures

18 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

All 3 metrics responding consistently – energy and area superiority.Little change in the energy delay product.

1.00E-02

1.00E-01

1.00E+00

1.00E+01

1.00E+02

DELAY ENERGY AREA

INV

NAND2

ADD32

ENERGY

DELAY AREA

BenchmarkingNRI Median Switch Characteristics

19 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

2011 ERD Chapter Emerging Memory Devices Emerging Logic Devices More-than-Moore Devices Benchmarking and Assessing

Emerging Devices Emerging Architectures

20 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

Emerging Architectures Emerging Memory Architectures in Conventional

Computing– Wireless Computing– Application Specific Computing– Multicore Computing– Research Database Computing in the Cloud

Evolved Architectures Exploiting Emerging Research Memory Devices

Morphic Architectures– Neuromorphic Architectures– Cellular-automata Architectures– Taxonomy of Computational Ability of Architectures

21 ERD 2011 ITRS Winter Conference – Songdo City, Incheon, Korea – Dec. 14, 2011

ERD – Key Messages

♦ New More-than-Moore Section added – Focused on RF devices♦ Emerging Research Memory Devices section broadened in 2011

to include: New “Storage Class Memory” Subsection New Memory “Select Device” Subsection Transitioned STT-MRAM to PIDS & FEP Introduced new memory device category – Redox RAM

♦ Emerging Research Logic changes: Transitioned n-InGaAs & p-Ge alternate channel MOSFETs

to PIDS & FEP. Synchronized more closely with the Nanoelectronics

Research Initiative (NRI)♦ Expanded technology benchmarking section♦ Expanded Architecture Section