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1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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CONCORDIA VLSI D E SIG N LA B 1 Interconnect/Via
Transcript
Page 1: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

CONCORDIAVLSI DESIGN LAB

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Interconnect/Via

Page 2: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Delay of Devices and Interconnect

Page 3: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Reduction of the feature size

Increase in the influence of the interconnect delay on

system performance

The difference in the arrival times of the clock signal to all registers in a synchronous digital system

Skew

Page 4: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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PowerPC microprocessor32,000 master/slave latch

An Example , The Clock Distribution Network (CDN)

A set of interconnections that delivers reliably a time reference, clock signal , to every register element in a synchronous digital system.

Page 5: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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5

11%

12%

3%

54%

8%

6%6%

Memory

Leakage

Short-Circuit

Clock

I/O

Global Interconnect

Logic and Local Routing

Power Consumption &Routing and system complexity

P= CV2f

Page 6: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Delay model of the CDN, Elmore Delay

model

r1 r2

s1

r4r3

s2

s0

It takes into account the interconnect resistance and capacitance and the capacitance of the registers

ec0//2

er0

ec0//2

s1

r1

r2

s2

r3

r4

s0

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OutIn Ri Rj

Ti Tj

TPD(min) /TPD(max)

Example: Routing delay problems The Clock Skew

The difference between time arrivals of the clock signal to all the registers in a synchronous digital system

S(ij) = Ti - Tj

Clock Period Limitations

Permissible range

Race Conditions

S(ij)min S(ij)max

S(ij) THOLDj - TPD(min)

S(ij) Tclk - TPD(max)

Two conditions:

Page 8: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Minimizing the effects of delay, The H_Tree

If it is possible to divide the set of registers R into two symmetric sets recursively and alternatively by vertical and horizontal lines, then the set R can be connected by an H-tree

Page 9: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Interconnect Length

Page 10: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Interconnect/Via

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Cross Section View of Capacitances in interconnect

Units are in Angstrom, 1A=0.1nm

Page 12: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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InterconnectInterconnects in chips are routed in

several layers horizontally and vertically and used according to their

application

Page 13: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Small line length: transistor speed governs the circuit speed.

Medium line length Transistor output resistance and line capacitance govern the circuit speed.

Long line length, line resistance and line capacitance govern the circuit speed.

Cooling the room temperature to 77K reduces the resistivity by an order of magnitude.At higher frequencies, Ghz and above the skin effect has to be taken into account.

Page 14: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Local interconnect are used for short distances on the chip. Mainly to connect the device Drain, source, gates or immediate devices.

Semi_global interconnect is used to connect gates FFs other small devices within a block of the hierarchy.

Global wiring is used for long interconnect such as Clock signal or other control signals.Separating the interconnect wires and the devices from each other are the dielectric material. The dielectric material gets thicker as move higher in the hierarchy of the wire placement

Interconnect usage

Page 15: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Parallel and fringing Capacitance

Page 16: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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http://maxwell.ucdavis.edu/~electro/dc_circuits/capacitance.html

Fringing Capacitance

Page 17: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Fringing Capacitance

H

T

H

T

T

HC rF 4

))11(2

1ln(

*

T is the thickness of wire H is the distance of wire to substrate.

Page 18: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Cross Talk

Page 19: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Cross talk

Is a disturbance caused by the electric or magnetic fields of one telecommunication signal affecting a signal in an adjacent circuit.Two effects: increased capacitance on the driver. Introduction of unwanted signal or noise from one line to the other.

Design tips:Methods to reduce cross talk,Increase inter_wire spacing.Place Vdd or ground wires between signal lines.

Page 20: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Fringing/ Parallel Plate Capacitance of Interconnect

Page 21: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Modeling Interconnect

LUMPED MODEL

T-MODEL

-MODEL

2T-MODEL

2π -MODEL

Page 22: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Modeling of Interconnect

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Delay of Interconnect

)1(2

NNrc

delay2

2rcldelay

Capacitance = C/unit area * L (length) * W (width) = CResistance = R/ * number of squares = R

Page 24: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Delay comparison

24

Page 25: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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RC delay with distributed parameters:

•More accurate than lumped RC model

•More difficult to solve for large N

•Need full-scale SPICE simulation

Page 26: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Example

A signal is propagated on a 6mm length metal 1 (M1) interconnect of CMOSIS5 Process, using minimum wire width.

Calculate the delay and comment on methods for reducing this delay.

6mm

Page 27: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Rent’s rule, relates number of i/O pins T, to the number of

gates N in a random logic network:

T=kN**pWhere:

k = average I/O per gateP= Rent’s exponent. It reflects wiring complexity , p=1 is the

highest.

T

Page 28: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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What is the maximum size of silicon chip?

)2ln(16.0intint o

lpackaging

INToo

chip C

CArea

C

CR

CRA

•Power dissipation•Packaging•Number of pins•Technology•The interconnect used

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Thank you !

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Inductances

)4

ln(2 d

hL

For die wires

h is the height of the wire above the substrate,d is the diameter of the wire is the magnetic permeability of the material

Page 31: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Inductance

For on-chip,

)4

8ln(

2 h

w

w

hL

h is the height of the wire above the substrate,d is the diameter of the wire is the magnetic permeability of the material

Page 32: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Ground Bounce and Vdd Sag examples from Alterahttp://www.altera.com/literature/wp/wp_grndbnce.pdf

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Example on VDD Bounce

yx ,Determine the values of due to inductive and resistive losses when the output driver sources 10mA in 1.5ns in the following circuit.Assume inductance of 13.9nH/mm.

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Circuit Vdd

Circuit GndBoard Gnd

Board Vdd

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Example on Power lines

What will be the power line width if you drive a 10pF load at 1GHz

Assume Vdd=3.5V.

Page 36: 1 Interconnect/Via. 2 Delay of Devices and Interconnect.

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Example on Charge Sharing

Calculate the drop in voltage for 64 read lines each consisting of 0.1pF capacitances. Assume bus capacitance to be 10pF.

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Thank you !


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