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1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

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Digital baseband controller DB3370 and DB3430 Data sheet 1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B © Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL
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Page 1: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller

DB3370 and DB3430

Data sheet

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Page 2: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Abstract

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 2 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Abstract

This data sheet defines the electrical and physical specifications for the DB3370, and DB3430 digital baseband controllers in SCP, as well as the PoP versions. It also defines the available variants, describes the component marking, and shows the mechanical drawings.

The primary target audiences for this document are electronic hardware engineers and designers working with the design and development of ME, based on ST-Ericsson platforms.

In order to optimize the design and supply of this device, ST-Ericsson reserves the right to make changes at any time.

IMPORTANT!

This data sheet is valid for DB3370 and DB3430; the specification is the same for both. In this document, some figures, tables, and text only refer to DB3370, but are to be considered valid for DB3430.

Page 3: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Legal information

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 3 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Legal information

© Copyright ST-Ericsson 2009, 2010. All rights reserved.

Disclaimer

The contents of this document are subject to change without prior notice. ST-Ericsson makes no representation or warranty of any nature whatsoever (neither expressed nor implied) with respect to the matters addressed in this document, including but not limited to warranties of merchantability or fitness for a particular purpose, interpretability or interoperability or, against infringement of third party intellectual property rights, and in no event shall ST-Ericsson be liable to any party for any direct, indirect, incidental and or consequential damages and or loss whatsoever (including but not limited to monetary losses or loss of data), that might arise from the use of this document or the information in it.

ST-Ericsson and the ST-Ericsson logo are trademarks of the ST-Ericsson group of companies or used under a license from STMicroelectronics NV or Telefonaktiebolaget LM Ericsson.

All other names are the property of their respective owners.

Trademark list

All trademarks and registered trademarks are the property of their respective owners.

AMBA™

AMBA is a trademark of ARM Limited.

ARM® ARM is a registered trademark of ARM Limited.

ARM926EJ-S™

ARM926EJ-S is a trademark of ARM Limited.

Bluetooth® The Bluetooth word mark and logos are owned by the

Bluetooth SIG, Inc. and any use of such marks by ST-Ericsson is under license.

CEVA™

CEVA is a trademark of CEVA, Inc.

CEVA-X1622™

CEVA-X1622 is a trademark of CEVA, Inc.

ECOPACK2® ECOPACK2 is a registered trademark of

STMicrolelectronics.

Embedded Trace

Macrocell

™ Embedded Trace Macrocell is a trademark of ARM Limited.

ETM9™

ETM9 is a trademark of ARM Limited.

I²C™

I²C is a trademark of NXP B.V.

I²S™

I²S is a trademark of NXP B.V.

IrDA® IrDA is a registered trademark of Infrared Data

Association.

Memory Stick

PRO

™ Memory Stick PRO is a trademark of Sony.

Page 4: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Legal information

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 4 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

MMC™

MMC is a trademark of the MultiMediaCard Association.

Philips® Philips is a registered trademark of NXP B.V.

SD™

SD is a trademark of Toshiba Corporation.

ST® The ST logo is a registered trademark of

STMicroelectronics

Page 5: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 5 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Contents

1 About this document 11

1.1 Purpose 11

1.2 Audience 11

1.3 Revision information 12

1.4 Reference list 13

2 Introduction 14

2.1 General description 14

3 Hardware architecture 15

3.1 Block diagram 16

3.1.1 Access subsystem 16

3.1.2 Application subsystem 17

4 Functional requirements 18

4.1 Access CPU subsystem 18

4.1.1 ARM926 subsystem 18

4.1.2 AHB matrix 18

4.1.3 DMA 19

4.1.4 Boot ROM 19

4.1.5 AAIF 19

4.2 Access peripherals subsystem 19

4.2.1 INTCON 19

4.2.2 SIMIF 20

4.2.3 SYSCON 20

4.2.4 GPIO 20

4.2.5 Timer 20

4.2.6 Watchdog 21

4.2.7 UART 21

4.2.8 SPI 21

4.2.9 IrDA 21

Page 6: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 6 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

4.2.10 USB 22

4.2.11 I2S/PCM 23

4.2.12 GPRS crypto 23

4.2.13 WCDMA cipher and integrity 23

4.2.14 I2C interface 23

4.2.15 ETX 23

4.2.16 EDC 23

4.2.17 Bus Trace 23

4.2.18 EventHist 24

4.2.19 CableDetect 24

4.2.20 MMC/SD/SDIO host controller 24

4.3 DSP subsystem 24

4.3.1 External memories 24

4.3.2 Peripherals 24

4.4 EGG subsystem 25

4.5 WCDMA subsystem 25

4.6 Application CPU subsystem 25

4.6.1 ARM926 subsystem 26

4.6.2 DMA 27

4.6.3 AAIF 27

4.6.4 NAND flash IF 27

4.6.5 SEMIF 27

4.6.6 Application EMIF 27

4.6.7 Boot ROM 28

4.7 XGAM subsystem 28

4.8 Camera data synchronizer 28

4.9 Camera image signal processor 28

4.10 Video encoder 28

4.11 Application peripherals subsystem 29

4.11.1 RTC 29

4.11.2 I2C interface 29

4.11.3 I2S/PCM interface 29

4.11.4 SPI 29

4.11.5 GPIO 29

4.11.6 Timer 30

4.11.7 Watchdog 30

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Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 7 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

4.11.8 SYSCON 30

4.11.9 Keypad 30

4.11.10 INTCON 31

4.11.11 UART 31

4.11.12 MMC/SD/SDIO host controller 31

4.11.13 Memory Stick PRO 31

4.11.14 Bus Trace 31

4.11.15 EventHist 31

4.11.16 Dynamic memory use counters 31

4.12 APEX 31

4.13 Analog cells 32

4.13.1 PLL 26 to 208 MHz 32

4.13.2 PLL 26 to 48/60 MHz 32

4.13.3 PLL 32 kHz to 13 MHz 32

4.13.4 PLL 13 MHz to 208 MHz 32

4.13.5 Random noise generator 32

4.13.6 DAC 32

4.13.7 ADC 32

4.13.8 General purpose ADC 32

4.13.9 Fuses 33

4.14 Chip level control 34

4.14.1 CHIPCON 34

4.14.2 Pad MUX 34

4.15 Test IP structure 34

4.15.1 TAP controllers 34

4.15.2 MemBIST controller 34

4.15.3 MemBIST 34

4.15.4 Fuse controller 34

4.15.5 Scan combiners (gates) 34

4.15.6 Test vector compression/decompression (gates) 35

5 Interfaces 36

5.1 DB3370 R1A 36

5.2 Unused IOs 36

Page 8: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 8 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

6 Revisions and variants 37

6.1 DB3370 and DB3430 revisions and variants 37

7 Packaging the SCP 38

7.1 Package outline assembly 38

7.2 Package mechanical drawing: SCP 39

8 Packaging the 12 × 12 PoP 40

8.1 Package outline assembly 40

8.2 Package mechanical drawing: PoP 12 × 12 42

8.2.1 Top view 42

8.2.2 Bottom view 43

9 Packaging the 14 × 14 PoP 44

9.1 Package outline assembly 2L substrate 44

9.2 Package mechanical drawing: PoP 14 × 14 46

9.2.1 Top view 46

9.2.2 Bottom view 47

10 Component identification 48

10.1 Component markings: SCP 48

10.2 Component markings: PoP 49

11 Electrical characteristics 50

11.1 Absolute maximum ratings 50

11.2 Normal operating conditions 51

11.2.1 Characteristics 51

11.3 IO characteristics 52

11.3.1 Input clock MCLK 52

11.3.2 Input clock RTCCLKIN 52

11.3.3 Output clock SYSCLK [2:0] 53

11.3.4 Bidirectional buffer 2 mA 1.8 V 53

11.3.5 Bidirectional buffer 4 mA 1.8 V 55

11.3.6 Bidirectional buffer 8 mA 1.8 V 56

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Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 9 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

11.3.7 Bidirectional buffer 1.8 V 58

11.3.8 subLVDS buffer 1.8 V 61

11.4 I2C Input/Output cell 63

11.4.1 I2C bidirectional buffer 1.8/2.75 V 63

11.5 PLL 64

11.5.1 PLL_26x 64

11.5.2 PLL_416x_A 65

11.5.3 PLL_240x 66

11.6 Analog pads 68

11.7 Converters 68

11.7.1 WCDMA I and Q Sigma-Delta ADC 68

11.7.2 WCDMA I/Q 10 bit D/A converters and smoothing filters 70

11.7.3 General purpose ADC 73

11.7.4 Band gap reference voltage generator and central bias current generator 77

11.8 Random noise generator 78

11.9 IO cell requirements 79

11.10 Operation modes 79

11.10.1 Clock frequencies 79

11.11 Power-on sequence 80

12 Test modes 81

12.1 Chip modes 81

12.2 Production test mode 82

12.3 JTAG emulation mode 82

13 Definitions 83

13.1 Jitter 83

13.1.1 Sigma 83

13.2 Duty cycle 83

13.3 Timing 83

13.3.1 Rise and fall time 83

13.3.2 Other timing 83

Page 10: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Contents

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 10 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Glossary 84

Page 11: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet About this document

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 11 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

1 About this document

1.1 Purpose

This data sheet defines the electrical and physical specifications for the DB3370 and DB3430 digital baseband controllers in Single Chip Package (SCP), as well as the Package on Package (PoP) versions.

The data sheet also defines the available variants, describes the component marking, and shows the mechanical drawings.

IMPORTANT!

This data sheet describes both DB3370 and DB3430, the specification is the same for both. In this document, some figures, tables, and text only refer to DB3370, but are to be considered valid for DB3430.

1.2 Audience

The primary target audiences for this document are electronic hardware engineers and designers working with the design and development of Mobile Equipment (ME), based on ST-Ericsson platforms.

It is assumed that the reader has a reasonable understanding of the concepts associated with mobile communications, combined with an appreciation of hardware design techniques.

Page 12: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet About this document

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 12 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

1.3 Revision information

The revision history of this document is listed below.

Table 1 Revision history

Date Rev. Comments

2009-05-28 A Original version

2009-07-09 B Leakage values and corresponding footnotes corrected in Table 7

Adjusted unused IO leakage recommendations in Unused IOs section.

Input capacitance of IOs changed to 3,5 pF and placed in last row of Characteristics table in Normal operating conditions section. (Same value for all buffers and including package cap.) (Values was 4-5 pF excluded package cap)

IIL and IIH of BDSCARyQP buffer changed from ±2 to ±1 µA in Bidirectional buffer 8 mA 1.8 V characteristics table.

Updated Boot ROM section.

2009-11-24 C Added watermark information.

Updated package information.

2010-01-14 D Updated for DB 3430.

2010-04-13 E Removed “Ericsson” prefix to digital baseband controller names.

“Ericsson Mobile Platform” replaced by “ST-Ericsson platforms”.

Digital baseband controller names converted to “DBxxxx” from “DB xxxx”

New chapter added: Chapter 6 Revisions and variants

2010-10-08 F Removed PRELIMINARY watermark.

Minor layout changes.

2010-11-02 G Updated Revision and variants chapter.

Page 13: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet About this document

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 13 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

1.4 Reference list

[1] USB 2.0 Specification http://www.usb.org

[2] Philips I2C specification version 2.1 http://www.nxp.com

[3] MMC Version 4.0 Specification http://www.mmca.org

[4] CE-ATA version 1.0 Specification http://www.ce-ata.org

[5] SD Specification 1.01 http:///www.sdcard.org

[6] Digital baseband controller, DB3370 and DB3430, Pinout description*

* See the Delivery Note (1212-APX xxx xxx), supplied with the platform release, for current document

number and revision.

Page 14: 1424-LZN9012501 1 Digital Baseband Controller DB3370 DB3430 DATA SHEET Rev G

Digital baseband controller Data sheet Introduction

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 14 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

2 Introduction

2.1 General description

The DB3370 is a highly-integrated digital baseband controller that includes Global System for Mobile Communication (GSM), General Packet Radio Services (GPRS), Enhanced Data Rate for GSM Evolution (EDGE), and Wideband Code Division Multiple Access (WCDMA).

The DB3370 also includes High-speed Downlink Packet Access (HSDPA) class 8 functionality and High-speed Uplink Packet Access (HSUPA) class 4 functionality.

The DB3370 includes support for the following:

NAND flash with on-die ECC, support of ECC with 4 KiByte page size. The DB3350 supports 4 KiByte in Strict mode.

Improved USB timing margins.

SPI Slave mode.

In this document, the term digital baseband controller is used to refer to the DB3370 and DB3430, unless otherwise stated.

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Digital baseband controller Data sheet Hardware architecture

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 15 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

3 Hardware architecture

The hardware architecture consists of the following two distinct subsystems:

Access subsystem

- Access CPU subsystem – ARM926EJ-S™

, Joint Test Action Group (JTAG), Embedded Trace Module (ETM), Instruction and Data (I&D)-cache, and I&D- Tightly Coupled Memory (TCM)

- Access peripheral subsystems –SIM interface, IrDA®, USB, Universal

Asynchronous Receiver/Transmitter (UART), and so on

- Digital Signal Processor (DSP) subsystem – CEVA-X1622™

, JTAG, Static Random Access Memory (SRAM), and Program Data Read Only Memory (PDROM)

- EDGE/GSM/GPRS (EGG) subsystem – EGG hardware accelerators

- WCDMA subsystem – WCDMA hardware accelerators

Application subsystem

- Application CPU subsystem – containing ARM926EJ-S, JTAG, ETM, I&D-cache, and I&D-TCM

- Application peripheral subsystems – I2C

™, keypad, UART, and so on

- Graphics subsystem – XGAM subsystem

- Audio Processing Execution (APEX) and video encoder subsystems

In addition to the two subsystems above, there is also a test block, chip control block, and a pad multiplexing block residing at the top level.

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Digital baseband controller Data sheet Hardware architecture

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 16 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

3.1 Block diagram

3.1.1 Access subsystem

WCDMA subsystemEGG Access HW DataCom HWAA Interface HW Basic HW

AHB1 (Data)

AHB Master

AHB-Lite

AHB-LiteAHB2 (DMA1)

AHB4 (DSP)

AHB-Lite

DSP subsystemAHB Master

PDROM

464 kB

SSRAM

332 kB

AHB Slave

JTAG

SYSCON

GPIO

SIMIF

AHB Matrix 52 MHz

8

16

3

8

I2C0

54

SPI

UART2RS232

IRDA3

4

16

8

16

BT UART

I2S/PCM

(BT)

4

416

UART0 416

AAIF

AHB Master

EDC

ETX

32

32

AHB

IF

ARB

APB Bridge

(Slow)

ARB

Access-

Application IF

To EMIF

arbiter

GPRS

CRYPTO32

16

26

MHz

DMA

58 Channels

54 Requests

WatchDog16 6

AHB2APB

(Fast)

8 2

26

MHz

AHB

IFAHB IF

AHB Master

16 Cable

Detect

EventHist16

BusTracer16

MSL

AHB-Lite

ARB

AHB

IF

AHB3 (DMA2)

CEVA-

X1622

AHB M

GPIO ICU PMU

CRU Timer0 Timer1

XpertCEVA

64 kB

IRAM

128 kB

DRAM

104 MHz

208 MHz

PLL

26 -> 208 MHz

USB PLL

26 -> 48/60 MHz

Random noise

generator

EGG subsystem

EGG HW accelerators

3

4

RF-CTRL

26 MHz

1

ANTSW

RX/TX

26 MHz

TXADC

APB Bridge AHB IF

1GPSSTART

3

26/52 MHz

Timer8

Access slow peripherals subsystem Access fast peripherals subsystem

LEGEND

WCDMA HW accelerators

52/104 MHz

3

10

3

10

AHB S

ARBARB ARB

ADC I&Q

12 x 3.84 MHz

DAC I/Q

12 x 3.84 MHz

1 Vpp

2 Vpp

1 Vpp

2 Vpp

AHB

IF

WCDMA Access HW

WCDMA

CIPHER 032

AHB

IF

AHB

IF

AHB Slave AHB SlaveAHB Slave AHB SlaveAHB Slave

Access ARM926 subsystem

D

Cache

32 kB

I

Cache

32 kB

AHB

Master

MMU

I Mem

Control

D Mem

Control

ARM9EJ-S

TLB

DTCM

8 kB

ITCM

26 kB

ETM IF

ETM9

JTAG DEBUG TCM IF

EICE

AHB

Master

13

JTAG

AHB BUS IF

AHB0 (Inst)

INTCON232

Boot ROM32

52

MHz

AHB peripherals subsystem

DMA

AHBr

AR

B

DMAC

General Purpose

ADC

2.35

Vpp 10

USB1232

AHB 2AHB

3

3ADC I&Q

12 x 3.84 MHz

1 Vpp

1 Vpp

WCDMA

INTEGRITY32

WCDMA

CIPHER 132

PPM 32

5RF-CTRL GP

4RF ANTSW

?RF-CTRL STRB

MMC0632

1PA_ENABLE

MMC1632

Figure 1 Access subsystem architecture

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Digital baseband controller Data sheet Hardware architecture

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 17 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

3.1.2 Application subsystem

EMIFAHB

Slave

SDRAM IF

ISP

Application CPU subsystem

APP BUS

APP DMAC

CDS

SEMIF

APEX+

ARM926 SM

ARM926EJ-S

D

Cache

32 kB

I

Cache

32 kB

AHB4 (Inst)

AHB5 (Data)

JTAG

SDRAM IF

APEX

MMU

I Mem

Control

D Mem

Control

ARM9_CORE

TLB

ETM IF

ETM9

SDRAM/NOR

Data Com HW

MM HW

AA Interface HW

Basic HW

JTAG DEBUG TCM IF

EICE

AAIF

AHB

Slave

Acc-App link

AHB0 (DMA0)

AHB2 (XGAM)

AHB

Slave

AHB

Master

AHB

Slave

AHB

Slave

ETM

Intel

MSL

AHB

Slave

PSRAM/NOR/NAND

APEX

RAMAPEX

ROM

AHB1 (DMA1)

55

55

55

From Access system

Video Encoder

AHB3 (V Enc)

Video Encoder

ARB ARB

EMIF Arbiter

SDRAM/NOR

AH

B p

eri

ph

era

ls

INTCON32 2

MS PRO832

Boot ROM

5k*32 bit32

AHB2AHB

ARB

52

MH

z

AAIF

RAM

AAIF

RAMV ENC

RAM0

V ENC

RAM1

NOR/

PSRAM/

NAND IF

ARB

AHB

Slave

ARB

AHB

Slave

ARB

AHB

Slave

AHB

MasterAHB

Slave

ARB

DMA CORE 40 Channels

and 31 RequestsAHB BUS IF

AHB

Master

AHB

Slave

AHB

Master

52 MHz

APB SLOW

KEYPAD

GPIO

13

MH

z

32

TIMER0

16

32

11

16 56

WDOG32

SYSCON16

UART0

AHB

Slave

4

RTC16

BUS TR32

Event H32

AHB2APB

(Slow)

TIMER132

APB FAST

I2C032

26

MH

z

MMC/SD932

AHB2APB

(Fast)

I2S/PCM016

AHB

Slave

4

2

I2C132 2

I2S/PCM116 4

SPI16 6

ARB

XGAM

CDI

PDI

PA

R/ S

SI

AHB

Slave

GAMCONPDI

AHB

Master

MCiDCT

(Video)

PDICON

CDICON

DA

TA

CP

U

GAMEACC

(3D)

GRAM

64k byte

ISP

CDICDS

AHB

Slave

ARB

32EMIF

32ISP

AHB

Periferals

AHB

Slave

AHB

Periferals

PPM32

ARB

V ENC

OCRAM

V ENC

TRAM

V ENC

DRAM

UART116 4

DTCM

8 kB

ITCM

8 kB

Figure 2 Application subsystem architecture

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Digital baseband controller Data sheet Functional requirements

DB3370 and DB3430

1424-LZN 901 2501/1 Uen Rev G 2010-11-02 LZN 901 2501/1 R2B 18 (86)

© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

4 Functional requirements

4.1 Access CPU subsystem

The digital baseband controller includes an Access CPU subsystem, which includes the submodules described in Subsections 4.1.1-4.1.5.

4.1.1 ARM926 subsystem

The ARM926EJ-S includes the following components:

32 KiB I-cache

32 KiB D-cache

Page table

Memory Management Unit (MMU)

JTAG

ETM9™

26 KiB I-TCM

8 KiB D-TCM

4.1.1.1 ARM926EJ-S

The CPU is an ARM926EJ-S core with a cache configuration of 32 KiB instruction and 32 KiB data.

The CPU can be clocked at 26, 104, and 208 MHz. The ARM926EJ-S includes an MMU with at least 32 entries.

4.1.1.2 TCM

The DB3370 includes a 26 KiB instruction TCM, and an 8 KiB data TCM. The data TCM is accessible by the Direct Memory Access (DMA). The instruction TCM is accessed at 208 MHz and the data TCM is accessed at 208 MHz.

4.1.1.3 ETM9

The ARM9 subsystem includes an Embedded Trace Macrocell™

9 medium+.

4.1.2 AHB matrix

The ARM High-speed Bus (AHB) architecture in the access part is clocked at either 13 MHz or 52 MHz.

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The AHB architecture includes five AHBs. The bus architecture implements AHB-Lite, which allows only one AHB master on each AHB. All other devices that share an AHB with a master are slaves. The AHB is programmable to operate at 13 MHz or 52 MHz.

The five AHBs are defined as follows:

AHB0 – CPUI_AHB (CPU instruction bus is the only master)

AHB1 – CPUD_AHB (CPU data bus is the only master)

AHB2 – DSP_AHB (DSP is the only master)

AHB3 – DMA_AHB (DMA is the only master)

AHB4 – DMA_AHB (DMA is the only master)

4.1.3 DMA

The DMA controller is Random Access Memory (RAM)-based and supports 54 DMA requestors and 58 DMA channels, where each channel supports unidirectional transfer. Both single and burst DMA requests are supported. The burst sizes are programmable for 1, 2, 4, 8, 12, or 16 words and the DMA controllers support 8, 16, and 32-bit wide transactions. The DMA controller is configured through its AHB slave interface. Accesses are 8, 16, or 32-bit on this interface.

4.1.4 Boot ROM

The Boot Read-only Memory (ROM) is 48 KiB. The boot code supports booting from the NAND flash or the USB.

In DB3370, NAND FLASH with on-die Error Code Correction (ECC) is supported. ECC of 4 KiByte page size is also supported.

4.1.5 AAIF

The Application to Access Interface (AAIF) block provides a high-speed flexible interface between the access and the Application parts of the digital baseband controller. It operates at up to 52 MHz, supports seven transmit and seven receive channels, and handles burst sizes between 1 and 64 bytes.

4.2 Access peripherals subsystem

4.2.1 INTCON

The Interrupt Controller (INTCON) provides up to 64 prioritized interrupts. Each of the 64 interrupts is routed to either of the two interrupts of the ARM core that is the Fast Interrupt Request (FIQ) or the low priority Interrupt Request (IRQ). The interrupt inputs are active low sensitive. All 64 prioritized interrupts are maskable.

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4.2.2 SIMIF

The Subscriber Identity Module Interface (SIMIF) connects to the SIM, through an external voltage level shifter module. The SIMIF block consists of three hardware lines (simrst, simclk, and simio). The data line (simio) is bi-directional and is used to transfer data to and from the SIM. The output clock (simclk) defines the data transfer rates and can be disabled when necessary. The data rate can be altered without having to reset the SIM card. The clock rate is selectable to either 26/8 MHz or 26/24 MHz. The data rate is the clock rate divided by a programmable value between 372 and 32. The clock to the SIM card can be switched off under software control.

The SIMIF includes a 24-byte First In, First Out (FIFO) for buffering received data from the SIM card. This data can be received with the Most Significant Bit (MSB) first or last, as well as inverted or non-inverted.

The data is transferred from the CPU to the SIMIF in 1 byte (8-bit) bursts. There is no FIFO buffering of transmit data within the SIMIF. Therefore, the block indicates to the CPU when it can send the next byte.

4.2.3 SYSCON

The System Controller (SYSCON) is responsible for clock generation and clock and reset distribution within the digital baseband controller, as well as to external devices.

The digital baseband controller chip-ID number is readable from the SYSCON.

The block is a slave peripheral under control of the ARM® processor. The programming of

the SYSCON controls the fundamental modes of operation within the digital baseband controller. Individual blocks can also be reset and their clocks held inactive by accessing the appropriate control registers.

A register in the SYSCON includes support for a dedicated interrupt from the ARM processor to the DSP for GSM radio signal processing-related functions (manipulated by the appropriate ARM software module). This enables the communication channel to be used for communication of speech coder data.

4.2.4 GPIO

The General Purpose Input/Output (GPIO) block operates as a general input and output port to the digital baseband controller external pins.

Each GPIO pin can be independently set as either input or output. The output type is push-pull or a pseudo form of open-drain or open-source output drive, selectable under software control. All ports are set as input after reset.

The GPIO block is able to generate interrupts, when configured as input, on either falling or rising edge.

4.2.5 Timer

The timer supports two OS timers using the 32.768 kHz clock and two general purpose timers running at not less than 1 MHz.

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4.2.6 Watchdog

The watchdog timer resets the CPU, if the CPU does not feed it before it times out. The timer has a default time-out period of 0.5 s.

4.2.7 UART

The DB3370 provides three UARTs in the access part to provide asynchronous interfaces to external devices. The size of receive and transmit FIFO is 16 bytes.

Table 2 UART description

UART # Use Alternative use Comment

UART0 Accessory control bus Debug There must be at least one debug connection.

UART2 RS232 The RS232 bus uses the UART2 to communicate with external devices on the system connector.

BT UART Bluetooth® Application Engine

Video Bus Can be used for the bridge interface, if the Bluetooth solution is handled in the Application chip.

4.2.8 SPI

The Serial Peripheral Interface (SPI) has support for Master mode and word lengths from 4 to 32 bits. It supports programmable bit rate, polarity, phase, and up to three slaves in Master mode.

4.2.9 IrDA

Infrared Data Association (IrDA) supports Slow Infrared (SIR), Medium Infrared (MIR), and Fast Infrared (FIR) when running on the 48 MHz clock.

The IrDA block is able to perform SIR detect at 9600 baud. It operates at 26 MHz when waiting for SIR (or SIP) pulses, which allows idle low power.

The block handles speeds up to 115,200 baud in UART mode, when clocked at 26 MHz.

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4.2.10 USB

The digital baseband controller USB function blocks both have a full speed transceiver interface and a ULPI 1.1 Single Data Rate (SDR) interface used for high speed USB transceivers. The interface selection is controlled by the SYSCON and the pinout selection in the pad MUX.

The transceiver is external to the platform. The type of external transceiver used determines the USB hardware capability of the product. The transceiver interface supports the following external transceiver types:

High speed PHY with SDR USB Low Pin Interface (ULPI). The ULPI mode consists of 12 signals (eight (SDR) data, clock, next, stop, and direction). Both full speed USB operation and high speed USB operation is possible. USB/UART multiplexing is possible by selecting the appropriate external ULPI transceiver with the built-in multiplexer.

Full speed PHY using a standard 4-pin differential interface with DP/DM/OE and RCV and sideband signaling for USBVbus detect, PullUpEnable, and suspend. This mode only supports USB full speed device operation. USB/UART multiplexing is possible by selecting the appropriate external full speed transceiver with the built-in multiplexer.

Full speed PHY using a standard 3-pin single-ended interface with DAT/SE0/OE or full speed PHY using a standard 4-pin differential interface with DP/DM/OE and RCV, both with sideband signaling using I

2C.

The transceiver interface works with standard transceivers from multiple major manufacturers. The transceiver interface allows the type of external transceiver to be signaled or detected so that the USB boot code and main software can set up the transceiver interface accordingly.

The USB function block uses a 60 MHz clock for the Full Speed modes. The internal 60 MHz clock mode takes the clock signal from the internal 48/60 MHz Analog Phase-locked Loop (APLL). The 60 MHz APLL clock is used for the USB function block and the full speed PHY interface.

For High Speed modes, an external 60 MHz clock is required. This is generated by the ULPI transceiver, based on an external Crystal (XTAL) or SYSCLK from the platform.

The USB function block supports a Low-power Suspend mode with automatic wake-up on resume signaling.

It is possible to initiate remote wake-ups from the USB function block when operating as a device.

The USB function block has seven in and ten out endpoints with sufficient endpoint FIFO sizes and DMA capability to fulfill the currently defined use cases for the USB, as well as some future USB use cases.

The USB function block supports operation as either a USB device or a USB host using either high speed or full speed signaling rates. All transfer types (control, interrupt, bulk, and isochronous) are supported. The USB host operation is according to the USB On-the-Go (OTG) supplement to the USB 2.0 specification, see Reference [1]. When operating as a USB host, the USB function block supports multiple devices.

Note: Special USB transceivers are needed for USB host and OTG operation. There is currently no software support for operation as a USB host or OTG.

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4.2.11 I2S/PCM

The Integrated Interchip Sound (I2S

™) supports both master and Slave Transmitter and

Receiver modes. Both transmit and the receive paths contain two logical channels each. Each logical channel supports 16-bit data words. It supports two audio transmit and two audio receive channels.

4.2.12 GPRS crypto

The GPRS crypto block is a dedicated hardware accelerator for GPRS encryption, decryption, and Cyclic Redundancy Check (CRC).

4.2.13 WCDMA cipher and integrity

The WCDMA cipher and integrity block is a dedicated hardware accelerator for WCDMA ciphering and integrity functionality.

4.2.14 I2C interface

The digital baseband controller includes one I2C Interface (I

2CIF) block in the access part

to provide communication with a power management device. The interface is compliant with Reference [2]. The interface operates in Multi-master Transmitter, Slave Transmitter, Multi-master Receiver, and Slave Receiver mode. The interface supports both the Standard mode and the Fast mode.

4.2.15 ETX

The Enable Transmission (ETX) block provides a level of security by protecting proprietary data within the digital baseband controller, such as the contents of the flash memory. It also ensures that the operation of the system is enabled only after the validation of certain parameters.

The ETX contains two electrically programmable values, one 64-bit and one 128-bit, residing in on-chip fuse farms, and programmed during wafer fabrication and set-up, with random offsets of the digital baseband controller die-ID fuse values. This allows each digital baseband controller to have unique ETX fuse values.

4.2.16 EDC

The digital baseband controller includes the ST-Ericsson Discretix Crypto Cell (EDC), which provides encryption/decryption functionality. The EDC block can retrieve a random number from the analog cell Random Noise Generator (RNG).

4.2.17 Bus Trace

The Bus Trace block is a set of counters that counts the number of accesses on the different AHBs during two seconds. The CPU can read the collected numbers and the counters can be reset.

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4.2.18 EventHist

The EventHist block is a FIFO in which a CPU can post an 8-bit code that is tagged by a time stamp. The CPU can read out the contents of the FIFO and get both the code and the time stamp. The time stamp field is 32 bits and it is updated with a time resolution of approximately 100 µs. The event history is available for the ARM926.

4.2.19 CableDetect

The CableDetect block is able to detect whenever a cable is connected to the external interface of the UART and then it requests the system clock and sends an interrupt to the CPU.

4.2.20 MMC/SD/SDIO host controller

The digital baseband controller includes two MMC™

/SD™

/SDIO interfaces.

4.3 DSP subsystem

The Digital Signal Processor Subsystem (DSPSUB) includes a DSP megacell, which contains the DSP CPU together with a TCM. The DSP is the CEVA-X1622 core with a 64 KiB instruction RAM and a 128 KiB data RAM. It also contains debug logic and interfaces. In addition to the megacell, the DSPSUB includes external memories, peripheral units, and interfaces. The DSP megacell is clocked at 208 MHz.

The DSPSUB includes an AHB master and an AHB slave interface. The AHB master provides a direct access to the Internal Random Access Memory (IRAM) in the EGG core through the AHB. The AHB slave interface allows the CPU and the DMA to access in the program and data RAM residing in the DSPSUB.

4.3.1 External memories

The external memories consist of a 464 KiB ROM and a 332 KiB RAM. The external memory operates at 104 MHz.

4.3.2 Peripherals

The DSP has the following internal peripherals:

DSP GPIO

Timers

Code Replacement Unit (CRU)

Interrupt Controller Unit (ICU)

Power Management Unit (PMU)

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4.3.2.1 DSP GPIO

The digital baseband controller DSUB includes an 8-bit DSP GPIO. Its signals are routed and multiplexed to the digital baseband controller GPIO.

4.3.2.2 Timers

There are two timers attached as DSP peripherals.

4.3.2.3 CRU

The CRU enables easy patching when executing software from the ROM.

4.3.2.4 ICU

The ICU handles interrupts from internal and external peripherals, and from the ARM CPU.

4.3.2.5 PMU

The PMU performs clock control and power management.

4.4 EGG subsystem

The EGG subsystem incorporates a GSM modem and an interface to the GSM radio together with memory control and an internal single port RAM. The GSM core has two AHB slave interfaces, the GSM peripherals are accessible through the IO bridge and the IRAM is accessible through the other AHB.

The EGG subsystem is handled and provided by ST-Ericsson.

4.5 WCDMA subsystem

The digital baseband controller WCDMA subsystem incorporates a WCDMA modem and an interface to the WCDMA together with memory control and an internal single port RAM. The WCDMA subsystem has three AHB slave interfaces.

The DB3370 also includes HSDPA class 8 functionality and HSUPA class 4 functionality.

The WCDMA subsystem is handled and provided by ST-Ericsson.

4.6 Application CPU subsystem

The digital baseband controller includes an Application CPU subsystem, which includes the submodules described in Subsections 4.6.1-4.6.7.

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4.6.1 ARM926 subsystem

The ARM926EJ-S includes the following components:

32 KiB I-cache

32 KiB D-cache

Page table

MMU

JTAG

ETM9

8 KiB I-TCM

8 KiB D-TCM

4.6.1.1 ARM926EJ-S

The CPU is an ARM926EJ-S core with a cache configuration of 32 KiB instruction and 32 KiB data.

The CPU has the capability to be clocked at 13, 52, 104, and 208 MHz. The ARM926EJ-S includes an MMU with 32 entries.

4.6.1.2 TCM

The digital baseband controller includes an 8 KiB instruction TCM and an 8 KiB data TCM. The data TCM is accessible by the DMA.

4.6.1.3 ETM9

The ARM9 subsystem includes an ETM9 medium+.

4.6.1.4 AHB

The AHB architecture in the application part is clocked at 6.5, 26, or 52 MHz.

The AHB architecture includes six AHBs. The bus architecture implements Advanced Microprocessor Bus Architecture (AMBA

™)-Lite, which allows only one AHB master on

each AHB. All other devices that share an AHB with a master are slaves. The AHB is programmable to operate at 6.5, 26, or 52 MHz.

The six AHBs are defined as follows:

AHB0 – DMA0_AHB (DMA is the only master)

AHB1 – DMA1_AHB (DMA is the only master)

AHB2 – XGAM_AHB (XGAM is the only master)

AHB3 – Venc_AHB (Video encoder is the only master)

AHB4 – CPUI_AHB (CPU instruction bus is the only master)

AHB5 – CPUD_AHB (CPU data bus is the only master)

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4.6.2 DMA

The DMA controller is RAM-based and supports 40 DMA requestors and 40 DMA channels, where each channel supports unidirectional transfer. Both single and burst DMA requests are supported and the burst sizes are programmable for 1, 4, 8, or 16 words. The DMA controller is configured through its AHB slave interface. All accesses are 8, 16, or 32-bit on this interface.

4.6.3 AAIF

The AAIF block provides a high-speed flexible interface between the access and the application parts of the digital baseband controller. It operates up to 52 MHz, supports seven transmits and seven receive channels, and handles burst sizes between 1 and 64 bytes.

4.6.4 NAND flash IF

The NAND flash interface is the port from the Application subsystem to an external NAND flash device. The NAND flash holds the software code during power off and, if required, it can hold some applications.

A complete page access support is handled using page sizes of 512 bytes or 2 KiB.

The block contains support for automatic error encoding and decoding using Hamming ECC, which can be turned on and off.

4.6.5 SEMIF

The CPU, Direct Memory Access Controller (DMAC), Graphics Hardware Subsystem (XGAM), and Video Encoder access the Shared External Memory Interface (SEMIF) through the AHBs.

The SEMIF supports dynamic memory sizes up to a total of 1 GiB (two banks of 512 MiB). There is only limited support for static memories when the application External Memory Interface (EMIF) is not active. The EMIF is shared between the Access and the Application subsystem and has functions for handling this arbitration. To ensure synchronous access from the AHB to the RAM, the SEMIF can run on both the clock used in the Access subsystem, and the clock used in the Application system. The clock of the system accessing the RAM is multiplexed and used in the SEMIF.

The SEMIF support for burst read and write is configurable for 1, 2, 4, and 8 words towards external memories. The SEMIF has a 16-bit data interface for read and write, and supports access rates up to 104 MHz.

4.6.6 Application EMIF

The CPU, DMAC, or XGAM accesses the EMIF through the AHBs. It supports both static and dynamic memories.

The EMIF supports asynchronous read and writes to the Synchronous Dynamic Random Access Memory (SDRAM) and burst read and write is configurable for 1, 2, 4, and 8 words towards the SDRAM.

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The EMIF has a 16-bit data interface for read and write, and supports access rates up to 104 MHz.

The application EMIF is a general interface for communication with an external SDRAM, NOR flash, NAND flash, companion chips, and so on. The application EMIF can be set in several different modes to support different types of memory combinations. The EMIF modes are as follows:

SDRAM (1-2 units), NAND flash (8-16 bits)

SDRAM (1-2 units), NOR

SDRAM (1-2 units), NAND flash (8-16 bits) (plus NOR flash, if the camera interface is used)

Extended SEMIF. Complete NOR flash support brought out from the SEMIF block.

A NOR flash can be an SRAM, companion chip, or similar.

4.6.7 Boot ROM

The Boot ROM is 20 KiB.

4.7 XGAM subsystem

The XGAM subsystem is a graphics acceleration module that provides hardware support in the creation of visual imagery and the transfer of this data to a display. The XGAM also provides support for connecting a Camera module. The visual data can be graphics, still images, or video.

The XGAM subsystem is handled and provided by ST-Ericsson.

4.8 Camera data synchronizer

The Camera Data Synchronizer (CDS) subsystem provides an interface to the camera modules outside the DB3370 with both parallel CCIR-656 types and serial SMIA/CCP2 type sensors. The CDS passes the data on to either the XGAM subsystem or the Camera Integrated Signal Processing (CAMISP) block.

4.9 Camera image signal processor

The CAMISP is a third-party Intellectual Property (IP) handled by ST-Ericsson.

4.10 Video encoder

The video encoder provides hardware acceleration for video encoding, capable of H.264 video encoding.

The video encoder is a third-party IP and handled by ST-Ericsson.

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4.11 Application peripherals subsystem

4.11.1 RTC

The Real Time Clock (RTC) block in the digital baseband controller is only a shadow register of the RTC register in the power management device, keeping track of time and date.

Alarms can also be programmed to generate interrupts to the CPU upon reaching a programmable count.

4.11.2 I2C interface

The digital baseband controller includes two I2CIF blocks in the application part to allow

for easier product development. One of the I2C buses can connect the digital baseband

controller to a power management device and the other to any other suitable device, for example, a camera. Both I

2CIFs are identical (except for the addressing).

The interfaces are compliant with Reference [2]. The interfaces operate in Multi-master Transmitter, Slave Transmitter, Multi-master Receiver, and Slave Receiver mode. The interfaces support both Standard mode and Fast mode.

4.11.3 I2S/PCM interface

The digital baseband controller includes two I2S interface blocks to provide a standardized

communication interface for audio between the digital baseband controller and an external audio device.

The I2S blocks support both master and Slave Transmitter and Receiver modes. Both the

transmit and the receive path contain two logical channels each. Each logical channel supports 16-bit data words. The blocks support two audio transmit and two audio receive channels. The I

2S blocks support DMA access and ST-Ericsson simple PCM Master and

Receiver mode.

The DB3370 supports SPI slave mode by using the PCM/I2S #1 interface.

4.11.4 SPI

The SPI block has support for Master mode and word lengths from 4 to 32 bits. It supports programmable bit rate, polarity, phase, and up to three slaves in Master mode.

The DB3370 supports SPI slave mode by using the PCM/I2S #1 interface.

4.11.5 GPIO

The GPIO block operates as a general input and output port to the digital baseband controller external pins.

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Each GPIO pin can be independently set as either input or output. The output type is push-pull or a pseudo form of open-drain or open-source output drive, selectable under software control. All ports are set as input after reset.

The GPIO block is able to generate interrupts, when configured as input, on either falling or rising edge.

4.11.6 Timer

The timer supports two OS timers using the 32.768 kHz clock and two general-purpose timers running at not less than 1 MHz.

4.11.7 Watchdog

The watchdog timer resets the CPU, if the CPU does not feed it before it times out. The timer has a default time-out period of 0.5 seconds.

4.11.8 SYSCON

The SYSCON resides at the top level of the circuit architecture and is responsible for clock generation and clock and reset distribution within the digital baseband controller, as well as to external devices.

The block is a slave peripheral under control of the ARM processor. The programming of the SYSCON controls the fundamental modes of operation within the digital baseband controller. Individual blocks can also be reset and their clocks held inactive by accessing the appropriate control registers.

4.11.9 Keypad

The keypad interface block supports up to 30 keys with 65 columns and 6 rows and operates in both Scan and Idle mode.

The keypad scan is performed by software. Any transition in the state of the column inputs is written directly to the register. The keypad interface differentiates between single key presses, simultaneous presses of any keys with a function key, and any key releases.

The period between successive scans is programmable over the range 5 ms to 80 ms, in 5 ms steps.

During Scan mode, the keypad generates an interrupt whenever a valid keypad state change occurs (including a release of any pressed keys). The scan function is disabled during system power-up.

The keypad can detect at least four simultaneous key presses. Not all combinations are supported.

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4.11.10 INTCON

The INTCON block provides up to 64 prioritized interrupts. Each of the 64 interrupts is routed to either of the two interrupts of the ARM core that is FIQ or IRQ. The interrupt inputs are active low sensitive. All 64 prioritized interrupts are maskable.

4.11.11 UART

The digital baseband controller provides two UARTs in the application part to provide an asynchronous interface to an external device. The size of receive and transmit FIFO is 16 bytes.

4.11.12 MMC/SD/SDIO host controller

The digital baseband controller includes the MMC/SD host controller. The width of the data interface is configurable to 1, 4, or 8 bits. MMC version 4.0 (see Reference [3]), CE-ATA ver. 1.0 (see Reference [4]) and SD version 1.0.1 (see Reference [5]) are supported.

4.11.13 Memory Stick PRO

The Memory Stick PRO™

block supports a 4-bit data bus with a maximum clock frequency of 34.6 MHz.

4.11.14 Bus Trace

The Bus Trace block is a set of counters that counts the number of accesses on the different AHBs during two seconds. The CPU can read the collected numbers and the counters can be reset.

4.11.15 EventHist

The EventHist block is a FIFO in which a CPU can post an 8-bit code tagged by a time stamp. The CPU can read out the contents of the FIFO and get both the code and the time stamp. The time stamp field is 32 bits and updated with a time resolution of approximately 1 ms.

4.11.16 Dynamic memory use counters

The Dynamic Memory Use Counters (DMUCs) keep track of current, minimum, and maximum memory use, based on the delta values that are the result of allocating and freeing memory.

4.12 APEX

The APEX block creates Music Industry Digital Interface (MIDI) tones from wave tables using sinc. interpolation and performs re-sampling.

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4.13 Analog cells

4.13.1 PLL 26 to 208 MHz

This Phase-locked Loop (PLL) provides the Access subsystem with the system clock in active mode of operation.

4.13.2 PLL 26 to 48/60 MHz

This PLL provides the clock to the USB (60 MHz) and to the IrDA (Fast IrDA 48 MHz).

4.13.3 PLL 32 kHz to 13 MHz

The PLL provides the Application subsystem with a system clock in Idle and Active mode operation.

4.13.4 PLL 13 MHz to 208 MHz

This PLL provides the Application subsystem with a system clock in Active mode operation.

4.13.5 Random noise generator

The random noise generator block generates random numbers for the EDC block.

4.13.6 DAC

The DAC block is a WCDMA Digital to Analog Converter (DAC). The I and Q channels have 10-bit inputs at 52 MHz and the differential output 2 Vpp.

4.13.7 ADC

The ADC block is a WCDMA sigma delta Analog to Digital Converter (ADC). The I and Q channels have the input differential 1 Vpp and 3-bit outputs at 46.08 MHz. Two identical ADCs are used to support RxDiversity.

4.13.8 General purpose ADC

The General Purpose ADC block is a general purpose ADC for measurement of TX power. The input full range is 2.35 V and 10 bits.

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4.13.9 Fuses

The digital baseband controller contains several E-fuses for various functions. Some are related to security, some for disabling functionality in product devices, and some for memory repair and for customer use.

The E-fuses in the DB3370 are divided in the following groups, depending on their function:

Security

Memory redundancy

Quality

Configuration

4.13.9.1 Security E-fuses

The security group of E-fuses is used for setting a seed to the security blocks inside the digital baseband.

The security E-fuses must be programmed at wafer level, as they are not accessible at package level.

4.13.9.2 Memory redundancy E-fuses

The memory redundancy E-fuses must be programmed at wafer level, as they are not accessible at package level.

4.13.9.3 Quality E-fuses

Quality bits are used for traceability. They contain the following information:

Lots

Wafer number

Die ID

Wafer site

The quality E-fuses are programmed at wafer level. Readout signal is bounded at package level.

4.13.9.4 Configuration E-fuses

The configuration group of E-fuses is used for customer One Time Programmable (OTP), disable debug functionality or reconfigure functionality in the digital baseband.

As they are fused at ME production, they need to be covered by ECC. The solution for this is to have a software ECC covering everything that is not directly used by the hardware.

The configuration E-fuses are programmable at wafer level, package level, and in ME production.

Write operations are not possible when the lock bit has been fused. The hardware checks theses bits after hardware reset using a Finite State Machine (FSM). If any of the four lock bits is set, it becomes impossible to change the programming of any fuses.

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4.14 Chip level control

4.14.1 CHIPCON

The CHIPCON block handles the clock generation and is controlled from the Application SYSCON, the Access SYSCON, or the transferred account procedure controller.

4.14.2 Pad MUX

The digital baseband controller includes a pad MUX block, which is used to control multiplexing of all signals used for test, such as: scan, analog Parallel Multiplexed Test (PMT), and Built-in Self Test (BIST). The multiplexers are controlled by signals from the CHIPCON, Application SYSCON, Access SYSCON, and TAP_REGS.

For details of the pad MUX, see Reference [6].

4.15 Test IP structure

4.15.1 TAP controllers

The TAP controllers provide control through the standard JTAG interface. Each of the CPUs, that is, the two ARM cores and the DSP, has a TAP controller which controls debugger functions. The TAP controller at chip level controls the pin MUX and CHIPCON.

4.15.2 MemBIST controller

The Memory BIST (MemBIST) controller block controls all MemBISTs and combination of MemBIST results.

4.15.3 MemBIST

For efficient production memory test, each memory has a MUX collar and a test circuit for pattern generation and comparison. The test circuit can be shared among memories with the same word depth.

4.15.4 Fuse controller

The fuse controller block burns fuses and reads out the fuse values at startup.

4.15.5 Scan combiners (gates)

The scan combiner block combines scan chains if sharing input/output pins. This block is inserted at the net list/gate level.

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4.15.6 Test vector compression/decompression (gates)

To reduce the test time and so as not to exceed the tester capacity, test vector compression is applied.

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5 Interfaces

5.1 DB3370 R1A

See Reference [6].

5.2 Unused IOs

All digital pins on the IC are implemented with bidirectional pads. Even if a pin is assigned to an output signal, the pad actually includes an input driver, and vice versa for a pin assigned to an input signal. This means that care must be taken to configure all unused pins in order to minimize the pad leakage.

The following guideline is used to minimize total leakage in unused digital pins:

The lowest leakage is achieved with a tristated output driver, and either internal or external pull-up (100 kΩ).

Enabling the output driver and driving a 1 slightly increases the leakage, but has the signal integrity benefit of acting as a noise barrier between neighboring pins.

The output driver of an unused pin must not be tristated without a pull resistor, since this may cause significant short circuit currents in the input driver stage of the pad.

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6 Revisions and variants

This chapter defines all revisions and variants of the DB3370, and DB3430 digital baseband controllers.

The digital baseband controllers are available in several revisions and variants. Functional differences are separated by revisions.

The devices are available in three package types, SCP, PoP 12x12 and PoP 14x14. Each package type is treated as a specific variant. For detailed information of the packages, please refer to Chapters 7, 8, and 9.

6.1 DB3370 and DB3430 revisions and variants

Table 3 DB3370 R1A/x and DB3430 R1A/x, list of variants

Package type Package marking

DB3370

Package marking

DB3430

SCP DB3370 R1A/2 DB3430 R1A/2

PoP 12x12 DB3370 R1A/3 DB3430 R1A/3

PoP 14x14 DB3370 R1A/4 Not available

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7 Packaging the SCP

This chapter describes the SCP assembly. The digital baseband controller is supplied in a Very thin profile Fine pitch Ball Grid Array (VFBGA) package. 10 × 10 mm. 392 balls with 0.4 mm pitch.

7.1 Package outline assembly

Title: VFBGA 10 × 10 × 1.0 392 5R24 × 24 PITCH 0.4 BALL 0.25

Table 4 VFBGA SCP mechanical data

Package mechanical data [mm] [mm]

Ref. Min. Typ. Max.

A0F

1 - - 1.0

A1 0.125 0.165 0.205

A2 0.15 0.19 0.23

A4 0.57 0.585 0.60

b1F

2 0.22 0.26 0.30

D 9.95 10.00 10.05

D1 - 9.20 -

E 9.95 10.00 10.05

E1 - 9.20 -

e3 - 0.40 -

Z - 0.40 -

ddd - - 0.08

eee2F

4 - - 0.09

fff3F

5 - - 0.04

1 Very thin profile: 0.80 mm < A ≤ 1.00 mm/Fine pitch: e < 1.00 mm pitch.

The total profile height (Dim A) is measured from seating plane to the top of the component. The maximum total package height is calculated by the following methodology:

A1 Typ + A2 Typ. + A4 Typ. +√ (A1² + A2² + A4² tolerance values). 2 The typical ball diameter before mounting is 0.25 mm.

3 VFBGA with 0.40 mm ball pitch is not yet registered in JEDEC publications. 4 The tolerance of position that controls the location of the pattern of balls with respect to datums A and B. For each ball, there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datums A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.

5 The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball, there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained entirely in the respective zone eee above. The axis of each ball must lie simultaneously in both tolerance zones.

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7.2 Package mechanical drawing: SCP

Figure 3 illustrates the SCP mechanical package6.

Figure 3 SCP mechanical package

6 The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized markings, or other

feature of package body or integral heat slug. A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1 corner. The exact shape of each corner is optional.

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8 Packaging the 12 × 12 PoP

This chapter describes the 12 × 12 PoP assembly. The digital baseband controller is supplied in a VFBGA PoP: 12 × 12 mm. 396 balls with 0.5 mm pitch. 128 top lands with 0.65 mm pitch.

The package conforms to lead-free (ROHS Directive 2002/95/EC) and halogen-free (ECOPACK2

®) requirements.

8.1 Package outline assembly

Title: VFBGA 12 × 12 × 1.0 344 + 52 5R23 × 23 PITCH 0.5 BALL 0.30 JEDEC/EIAJ reference number: JEDEC standard no.95, section 4.22.

Table 5 VFBGA (PoP) package mechanical data

Package mechanical data [mm]

Ref. Min. Typ. Max.

A5F

7 - - 0.85

A1 0.16 0.21 0.26

A2 - 0.57 -

A3 0.26 0.30 0.34

A5 0.24 0.27 0.30

b6F

8 0.25 0.30 0.35

C - 1.00 -

c - 0.30 -

D 11.90 12.00 12.10

D1 - 11.00 -

D2 - 11.05 -

E 11.90 12.00 12.10

E1 - 11.00 -

7 Very thin profile: 0.80 mm < A ≤ 1.00 mm/Fine pitch: e < 1.00 mm pitch.

- The total profile height (Dim A) is measured from seating plane to the top of the component. - The maximum total package height is calculated by the following methodology:

A1 Typ + A3 Typ. + A5 Typ. +√ (A1² + A3² + A5² tolerance values) 8 The typical ball diameter before mounting is 0.30 mm.

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Package mechanical data [mm]

E2 - 11.05 -

e - 0.50 -

F 8.819 8.869 8.919

f - 0.65 -

G 8.819 8.869 8.919

h - 1.50 -

K - 30° -

Z - 0.50 -

Z1 - 0.475 -

ddd - - 0.10

eee7F

9 - - 0.15

fff8F

10 - - 0.05

kkk11 - - 0.15

mmm12 - - 0.08

9 This is the tolerance of position that controls the location of the pattern of balls with respect to datums A and B. For each ball, there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datums A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.

10 This is the tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball, there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained entirely in the respective zone eee above. The axis of each ball must lie simultaneously in both tolerance zones.

11This is the tolerance of position that controls the location of the pattern of lands with respect to datums A and B. For each land there is a cylindrical tolerance zone kkk perpendicular to datum C and located on true position with respect to datums A and B as defined by f. The axis perpendicular to datum C of each land must lie within this tolerance zone.

12This is the tolerance of position that controls the location of the lands within the matrix with respect to each other. For each land, there is a cylindrical tolerance zone mmm perpendicular to datum C and located on true position as defined by kkk. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone mmm in the array is contained entirely in the respective zone kkk above. The axis of each ball must lie simultaneously in both tolerance zones.

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8.2 Package mechanical drawing: PoP 12 × 12

8.2.1 Top view

Figure 4 illustrates the top view of the 12 × 12 PoP mechanical package.

Figure 4 12 × 12 PoP mechanical package top view

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8.2.2 Bottom view

Figure 5 illustrates the bottom view of the 12 × 12 PoP mechanical package13.

Figure 5 12 × 12 PoP mechanical package bottom view 9f

13 The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized markings, or other

feature of package body or integral heat slug. A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1 corner. The exact shape of each corner is optional.

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9 Packaging the 14 × 14 PoP

This chapter describes the 14 × 14 PoP assembly. The digital baseband controller is supplied in a VFBGA PoP: 14 × 14 × 1.0 mm and in a Very Very Thin profile Fine pitch Ball

Grid Array (WFBGA) PoP: 14 × 14 × 0.8. The packages have 412 balls with 0.5 mm pitch and 152 top lands with 0.65 mm pitch.

The package conforms to lead-free (ROHS Directive 2002/95/EC) and halogen-free (ECOPACK2) requirements.

9.1 Package outline assembly 2L substrate

Title: WFBGA 14 × 14 × 0.8 412 6R25 × 25 PITCH 0.5 BALL 0.30 JEDEC/EIAJ reference number: JEDEC standard no. 95, section 4.22 Package code: 9L

Table 6 WFBGA (PoP) package mechanical data

Package mechanical data [mm]

Ref. Min. Typ. Max.

A5F14

- - 0.77

A1 0.16 - 0.28

A3 - - 0.24

A5 - - 0.30

b6F15

0.25 0.30 0.35

C - - 1.10

c - 0.30 -

D 13.90 14.00 14.10

D1 - 12.00 -

D2 - 13.00 -

E 13.90 14.00 14.10

E1 - 12.00 -

14 Very Very Thin profile: 0.65 mm < A ≤ 0.80 mm / Fine pitch: e < 1.00 mm

The total profile height (Dim A) is measured from seating plane to the top of the component. The maximum total package height is calculated by the following methodology:

A max = A1 Typ + A3 Typ. + A5 Typ. +√ (A1² + A3² + A5² tolerance values) 15

The typical ball diameter before mounting is 0.30 mm.

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Package mechanical data [mm]

Ref. Min. Typ. Max.

E2 - 13.00 -

e - 0.50 -

F - - 10.90

f - 0.65 -

G - - 10.90

K - 30° -

Z - 1.00 -

Z1 - 0.50 -

ddd - - 0.10

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9.2 Package mechanical drawing: PoP 14 × 14

9.2.1 Top view

Figure 6 illustrates the top view of the 14 × 14 PoP mechanical package.

Figure 6 14 × 14 PoP mechanical package top view

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9.2.2 Bottom view

Figure 7 illustrates the bottom view of the 14 × 14 PoP mechanical package16.

Figure 7 14 × 14 PoP mechanical package bottom view

16 The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized markings, or other

feature of package body or integral heat slug. A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1 corner. The exact shape of each corner is optional.

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10 Component identification

This chapter describes the different examples of the component identification marking.

The examples in Section 10.1 and Section 10.2 illustrate the markings for DB3370, and DB3430.

10.1 Component markings: SCP

Figure 8 illustrates the typical package markings for the digital baseband controller in SCP.

e2

/// DB3370, or DB3430

R1A/XX

F

G

H

I

J

K

L

M

Green package

ST-Ericsson device number

ST-Ericsson revision number

Assembly plant

BE sequence

Diffusion traceability plant

Country of origin

Test and finishing plant

Assembly year

Assembly week

Pin1-ref

Figure 8 Component markings: SCP

ST-Ericsson device number DB3370, or DB3430

Each digital baseband controller unit is marked as follows:

The ST-Ericsson external family product number

The number/batch ID and assembly sequence [manufacturer’s information]

The date of manufacture, that is, year and week in a digit code according to ISO 8601 (yyyyww) or batch code [manufacturer’s information]

The ST-Ericsson revision code and internal ID suffix.

A terminal identification index on the case (pin 1, where applicable).

Note: The markings are resistant to mechanical wear and common fluids that the digital baseband controller may be exposed to during normal handling, storage, and operation.

///DB3370

R1A/XX

F G H

I J K L

M

e2

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10.2 Component markings: PoP

Figure 9 illustrates the typical package markings for the digital baseband controller in PoP version.

e2

/// DB3370 or DB3430

R1A/XX

D

E

F

G

H

I

J

b

Green package

ST-Ericsson device number

ST-Ericsson revision number

Assembly plant

BE sequence

Diffusion traceability plant

Country of origin

Test and finishing plant

Assembly year

Assembly week

Pin1-ref

Figure 9 Component markings: PoP

ST-Ericsson device number DB3370, or DB3430

Each digital baseband controller unit is marked as follows:

The ST-Ericsson external family product number

The number/batch ID and assembly sequence [manufacturer’s information]

The date of manufacture, that is, year and week in a digit code according to ISO 8601 (yyyyww) or batch code [manufacturer’s information]

The ST-Ericsson revision code and internal ID suffix.

A terminal identification index on the case (pin 1, where applicable).

Note: The markings are resistant to mechanical wear and common fluids that the digital baseband controller may be exposed to during normal handling, storage, and operation.

DB3370

R1A/XX

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11 Electrical characteristics

11.1 Absolute maximum ratings

The device reliability can be adversely affected by exposure to the absolute maximum ratings for extended periods.

Table 7 Absolute maximum ratings

Symbol Parameter Condition Min. Max. Unit

VDD Supply voltage core - -0.30 1.32 V

VDDA Supply voltage analog cells - -0.30 2.75 V

VDDE Supply voltage IOs without level shifter - -0.30 2.75 V

VDDE Supply voltage IOs with level shifter - -0.30 2.75 V

VDDE Supply voltage IOs with level shifter and fail safe

- -0.30 2.75 V

VPP Fuse programming voltage - -0.30 7.10 V

VI Input voltage IOs without level shifter - -0.30 2.75 V

VI Input voltage IOs with level shifter - -0.30 2.75 V

VI Input voltage IOs with level shifter and fail safe - -0.30 2.75 V

VO Output voltage IOs with level shifter - -0.30 2.75 V

VO Output voltage IOs with level shifter and fail safe - -0.30 2.75 V

IIC Input clamp current VI < VSS or VI > VDD - - 100 mA

IOC Output clamp current VO < VSS or VO > VDD - - 100 mA

ESD Human body model - 2,000 - V

Tamb Operating ambient temperature Still air -40 85 C

Tstg Storage temperature Still air -65 150 C

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11.2 Normal operating conditions

The device can operate in a mixed-voltage environment. To obtain the correct function on IOs, analog blocks, and subcores, the controlling block (main core) must be supplied first during power up.

To guarantee system functionality, PWRRSTn must be active until all supplies are valid during power up and go active before any supply drops during power down.

The device must be used in normal operating conditions, see Subsection 11.2.1, unless otherwise specified.

11.2.1 Characteristics

Table 8 Characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

tamb Operating ambient temperature Still air -30 25 85 C

Clkin Main clock square wave input - - 26.0 - MHz

Clkin RTC clock square wave input - - 32.768 - kHz

NoiseA Supply noise 5 MHz, % RMS of VDD All supplies - - 1 %

NoiseB Supply noise 104 MHz, % RMS of VDD All supplies - - 1 %

VDD Supply voltage core Active mode 1.12 1.20 1.30 V

VDD Supply voltage core Idle mode 0.96 1.05 1.10 V

VDDA Supply voltage analog cells PLL - 2.35 2.5 2.65 V

VDDA Supply voltage analog cells DAC/ADC - 2.35 2.50 2.65 V

VDDE Supply voltage IO Normal operation

1.70 1.80 1.90 V

VPP Fuse programming voltage During fuse programming

6.95 7.00 7.05 V

VDD Supply voltage core During fuse programming

1.12 1.20 1.30 V

VDDA_AF Supply voltage fuse During fuse programming

2.35 2.5 2.75 V

VDDE Supply voltage IO During fuse programming

1.7 1.8 1.9 V

tamb Temperature range (Environment = DARK)

During fuse programming

+10 - +45 C

IDD Supply current core Online17

- 300 500 mA

17 Digital Signal Processor (DSP) and CPUs running at full speed. All parts powered up.

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Symbol Parameter Condition Min. Typ. Max. Unit

IDDA Supply current analog - - - 20 mA

IDDE Supply current IO 18

- - 55 mA

IDDQ Leakage current VDD 19

@1.0 V - 1.14 mA

IDDQ Leakage current VDD [email protected] V - 0.28 (1.50) mA

IDDQA Leakage current VDDA 19

- 150 450 µA

IDDQE Leakage current VDDE 19

- 20 100 µA

CIN Input capacitance IO 20 - - 3.5 pF

Note: Leakage at 1.2 V is only an estimated value, not measured.

11.3 IO characteristics

11.3.1 Input clock MCLK

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 9 Input clock MCLK characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

fin Input frequency - - 26 - MHz

tDCin Input duty cycle (including jitter) - 45 50 55 %

tr/tf Clock input rise and fall time 20-80% 1 - 5 ns

tjitterin Input jitter -0.5 - 0.5 %

11.3.2 Input clock RTCCLKIN

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 10 Input clock RTCCLKIN characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

fin Input frequency - - 32,768 - Hz

tDCin Input duty cycle (including jitter) - 35 50 65 %

18 Max. allowed total IO current 19 Value specified at Tamb = 25 C VDD = Typ. 20 Sum of the package maximum capacitance and the maximum buffer input capacitance.

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tr/tf Clock input rise and fall time 20-80% 1 - 20 ns

tjitterin Input jitter -0.30 - 0.30 %

11.3.3 Output clock SYSCLK [2:0]

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 11 Output clock SYSCLK characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

fout Output frequency - 0 - 52 MHz

tDCin Output duty cycle (including jitter) - 45 50 55 %

tr Rise time CL = 10 pF 0.86 - 0.93 ns

tr Rise time CL = 50 pF 3.08 - 3.41 ns

tf Fall time CL = 10 pF 0.84 - 0.93 ns

tf Fall time CL = 50 pF 3.17 - 3.53 ns

tjitterout Output jitter -2 - 2 %

11.3.4 Bidirectional buffer 2 mA 1.8 V

Vendor reference: BD2SCARyQP_1 V8_LIN (IO65LPVT_SF_1 V8)

The Y in the vendor reference indicates whether the cell has pull-up (U), pull-down (D) or both (UD).

The buffer is level-shifting.

The buffer has internal, controllable pull-up and pull-down. The use of the pull-up and pull-down is described in Reference [6].

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 12 Bidirectional buffer 2 mA 1.8 V characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.35 VDDE V

VIH High-level input voltage - 0.65 VDDE - VDDE V

Vhys Hysteresis (VIT+ - VIT-) - 150 - - mV

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

IIL Low-level input current VIL -2 - 2 µA

IIH High-level input current VIH -2 - 2 µA

fmax Input cell frequency VIL, VIH - - 104 MHz

tDCout Input cell duty cycle out tDCin 50%, VIL, VIH 45 - 55 %

IOL Low-level output current - - - 2.00 mA

IOH High-level output current - -2.00 - - mA

IOZ Output leakage current VO = VDD or VSS -1 - 1 µA

VOL Low-level output voltage IOL 0 - 0.20 V

VOL Low-level output voltage IOL = 100 µA 0 - 0.10 V

VOH High-level output voltage IOH VDDE - 0.20 - VDDE V

VOH High-level output voltage IOH = -100 µA VDDE - 0.10 - VDDE V

VIO IO cell operating voltage 21

0 - VDDE V

VIO IO cell operating voltage - -0.3 - VDDE + 0.3 V

fmax Output cell frequency CL = 10 pF - - 52 MHz

fmax Output cell frequency CL = 20 pF - - 26 MHz

tDCout Output cell duty cycle out tDCin 50%, VOL,

VOH 45 - 55 %

zout Output impedance - - 80 - Ω

tr Rise time CL = 10 pF 1.42 - 1.53 ns

tr Rise time CL = 50 pF 5.84 - 6.45 ns

tf Fall time CL = 10 pF 1.49 - 1.60 ns

tf Fall time CL = 50 pF 6.41 - 7.14 ns

IEN Pull-up current enabled - -85 -36 -18 µA

IEN Pull-down current enabled - 15 36 88 µA

IDIS Pull-up/pull-down current disabled - -1 - 1 µA

IZ Total IO cell leakage current - -1 - 1 µA

21 Limited to less than ¼ of the period time

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

11.3.5 Bidirectional buffer 4 mA 1.8 V

Vendor reference: BD4SCARyQP_1 V8_LIN (IO65LPVT_SF_1 V8)

The Y in the vendor reference indicates whether the cell has pull-up (U), pull-down (D) or both (UD).

The buffer is level-shifting.

The buffer has internal, controllable pull-up and pull-down. The use of the pull-up and pull-down is described in Reference [6].

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 13 Bidirectional buffer 4 mA 1.8 V characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.35 VDDE V

VIH High-level input voltage - 0.65 VDDE - VDDE V

Vhys Hysteresis (VIT+ - VIT-) - 150 - - mV

IIL Low-level input current VIL -2 - 2 µA

IIH High-level input current VIH -2 - 2 µA

fmax Input cell frequency VIL, VIH - - 104 MHz

tDCout Input cell duty cycle out tDCin 50%, VIL, VIH 45 - 55 %

IOL Low-level output current - - - 4.00 mA

IOH High-level output current - -4.00 - - mA

IOZ Output leakage current VO = VDD or VSS -1 - 1 µA

VOL Low-level output voltage IOL 0 - 0.20 V

VOL Low-level output voltage IOL = 100 µA 0 - 0.10 V

VOH High-level output voltage IOH VDDE - 0.20 - VDDE V

VOH High-level output voltage IOH = -100 µA VDDE - 0.10 - VDDE V

VIO IO cell operating voltage 22

0 - VDDE V

VIO IO cell operating voltage - -0.3 - VDDE + 0.3 V

fmax Output cell frequency CL = 10 pF - - 104 MHz

fmax Output cell frequency CL = 30 pF - - 60 MHz

22 Limited to less than ¼ of the period time

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tDCout Output cell duty cycle out tDCin 50%, VOL,

VOH 45 - 55 %

zout Output impedance - - 50 - Ω

tr Rise time CL = 10 pF 0.86 - 0.93 ns

tr Rise time CL = 50 pF 3.08 - 3.41 ns

tf Fall time CL = 10 pF 0.84 - 0.93 ns

tf Fall time CL = 50 pF 3.17 - 3.53 ns

IEN Pull-up current enabled - -85 -36 -18 µA

IEN Pull-down current enabled - 15 36 88 µA

IDIS Pull-up/pull-down current disabled - -1 - 1 µA

IZ Total IO cell leakage current - -1 - 1 µA

11.3.6 Bidirectional buffer 8 mA 1.8 V

Vendor reference: BD8SCARyQP_1 V8_LIN (IO65LPVT_SF_1 V8)

The Y in the vendor reference indicates whether the cell has pull-up (U), pull-down (D) or both (UD).

The buffer is level-shifting.

The buffer has internal, controllable pull-up and pull-down. The use of the pull-up and pull-down is described in Reference [6].

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 14 Bidirectional buffer 8 mA 1.8 V characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.35 VDDE V

VIH High-level input voltage - 0.65 VDDE - VDDE V

Vhys Hysteresis (VIT+ to VIT-) - 160 - - mV

IIL Low-level input current VIL -1 - 1 µA

IIH High-level input current VIH -1 - 1 µA

fmax Input cell frequency VIL, VIH - - 104 MHz

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tDCout Input cell duty cycle out tDCin 50%, VIL, VIH

45 - 55 %

IOL Low-level output current - - - 8.00 mA

IOH High-level output current - -8.00 - - mA

IOZ Output leakage current VO = VDD or VSS

-1 - 1 µA

VOL Low-level output voltage IOL 0 - 0.20 V

VOL Low-level output voltage IOL = 100 µA 0 - 0.10 V

VOH High-level output voltage IOH VDDE - 0.20 - VDDE V

VOH High-level output voltage IOH = -100 µA VDDE - 0.10 - VDDE V

VIO IO cell operating voltage 23

0 - VDDE V

VIO IO cell operating voltage -0.3 - VDDE + 0.3 V

fmax Output cell frequency CL = 10 pF - - 104 MHz

fmax Output cell frequency CL = 50 pF - - 52 MHz

tDCout Output cell duty cycle out tDCin 50%, VOL, VOH

45 - 55 %

Czout Output impedance - - 20 - Ω

tr Rise time CL = 10 pF 0.58 - 0.64 ns

tr Rise time CL = 50 pF 1.70 - 1.87 ns

tf Fall time CL = 10 pF 0.56 - 0.62 ns

tf Fall time CL = 50 pF 1.84 - 1.98 ns

IEN Pull-up current enabled - -85 -36 -18 µA

IEN Pull-down current enabled - 15 36 88 µA

IDIS Pull-up/pull-down current disabled - -1 - 1 µA

IZ Total IO cell leakage current - -1 - 1 µA

23 Limited to less than ¼ of the period time

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

11.3.7 Bidirectional buffer 1.8 V

Vendor reference: BDPROGMOBDDRSCARUDQP_1 V8_2 V5_TF_LIN (IO65LPSVTHVT_SF_TF_DDR_1 V8_2 V5_7M4X0Y2Z)

BDCLKMOBDDRSCARUDQP_1 V8_2 V5_TF_LIN (IO65LPSVTHVT_SF_TF_DDR_1 V8_2 V5_7M4X0Y2Z)

The Y in the vendor reference indicates whether the cell has pull-up (U), pull-down (D) or both (UD). The use of the pull-up and pull-down is described in Reference [6].

The buffer has three input signals (ZOUT-PROGA, PROGA, and PROGB). Table 15 contains the four different configurations that can be selected.

Table 15 Modes of operation

ZOUT-PROGA PROGA PROGB Mode Impedance [Ω] Description

0 0 0 000 50 -

0 0 1 001 50 -

0 1 0 010 50 -

0 1 1 011 50 -

The buffer is level-shifting.

The buffer has internal, controllable pull-up and pull-down.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 16 Bidirectional buffer with programmable slope 1.8 V characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.3 V

VIH High-level input voltage - 0.8 VDDE - VDDE V

Vhys Hysteresis (VIT+-VIT-) - 200 - - mV

IIL Low-level input current VIL -1 - 1 µA

IIH High-level input current VIH -1 - 1 µA

fmax Input cell frequency VIL,VIH - - 104 MHz

tDCout Input cell duty cycle out tDCin 50%, VIL,VIH 45 - 55 %

IOL Low-level output current All modes - - 2.00 mA

IOH High-level output current All modes -2.00 - - mA

IOZ Output leakage current VO = VDD or VSS -1 - 1 µA

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

VOL Low-level output voltage IOL 0 - 0.20 V

VOH High-level output voltage IOH 0.9 VDDE - VDDE V

VIO IO cell operating voltage - 0 - VDDE V

VIO IO cell operating voltage 24

-0.3 - VDDE + 0.3 V

fmax Output cell frequency Mode = 000

CL = 5 pF

- - 260 MHz

fmax Output cell frequency Mode = 001

CL = 5 pF

- - 260 MHz

fmax Output cell frequency Mode = 010

CL = 5 pF

- - 260 MHz

fmax Output cell frequency Mode = 011

CL = 5 pF

- - 260 MHz

tDCout Output cell duty cycle out tDCin 50%, VOL, VOH 45 - 55 %

zout Output impedance 50 Ω mode - 50 - Ω

tr Rise time Mode = 000

CL = 8 pF

0.58247 - 0.79954 ns

tr Rise time Mode = 001

CL = 8 pF

0.57903 - 0.7755 ns

tr Rise time Mode = 010

CL = 8 pF

0.56486 - 0.81862 ns

tr Rise time Mode = 011

CL = 8 pF

0.55789 - 0.7514 ns

tr Rise time Mode = 000

CL = 15 pF

0.96636 - 1.2772 ns

tr Rise time Mode = 001

CL = 15 pF

0.96461 - 1.2635 ns

tr Rise time Mode = 010

CL = 15 pF

0.95179 - 1.2752 ns

tr Rise time Mode = 011

CL = 15 pF

0.94717 - 1.24 ns

tr Rise time Mode = 000

CL = 22 pF

1.359 - 1.766 ns

24 Limited to less than ¼ of the period time

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tr Rise time Mode = 001

CL = 22 pF

1.359 - 1.756 ns

tr Rise time Mode = 010

CL = 22 pF

1.349 - 1.755 ns

tr Rise time Mode = 011

CL = 22 pF

1.346 - 1.732 ns

tr Rise time Mode = 000

CL = 30 pF

1.817 - 2.330 ns

tr Rise time Mode = 001

CL = 30 pF

1.816 - 2.322 ns

tr Rise time Mode = 010

CL = 30 pF

1.806 - 2.315 ns

tr Rise time Mode = 011

CL = 30 pF

1.802 - 2.302 ns

tf Fall time Mode = 000

CL = 8 pF

0.564 - 0.862 ns

tf Fall time Mode = 001

CL = 8 pF

0.572 - 0.835 ns

tf Fall time Mode = 010

CL = 8 pF

0.546 - 0.837 ns

tf Fall time Mode = 011

CL = 8 pF

0.529 - 0.751 ns

tf Fall time Mode = 000

CL = 15 pF

0.911 - 1.288 ns

tf Fall time Mode = 001

CL = 15 pF

0.914 - 1.272 ns

tf Fall time Mode = 010

CL = 15 pF

0.900 - 1.268 ns

tf Fall time Mode = 011

CL = 15 pF

0.891 - 1.215 ns

tf Fall time Mode = 000

CL = 22 pF

1.272 - 1.742 ns

tf Fall time Mode = 001

CL = 22 pF

1.270 - 1.732 ns

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tf Fall time Mode = 010

CL = 22 pF

1.264 - 1.727 ns

tf Fall time Mode = 011

CL = 22 pF

1.261 - 1.695 ns

tf Fall time Mode = 000

CL = 30 pF

1.686 - 2.280 ns

tf Fall time Mode = 001

CL = 30 pF

1.686 - 2.271 ns

tf Fall time Mode = 010

CL = 30 pF

1.678 - 2.263 ns

tf Fall time Mode = 011

CL = 30 pF

1.680 - 2.244 ns

IEN Pull-up current enabled - -85 -36 -18 µA

IEN Pull-down current enabled - 15 36 88 µA

IDIS Pull-up/pull-down current disabled - -1 - 1 µA

IZ Total IO cell leakage current - -1 1 µA

11.3.8 subLVDS buffer 1.8 V

Vendor reference: SUBLVDS_IN_1 V8_SF_LIN (IO65LPSVTHVT_SF_SUBLVDS_1 V8_50_7M4X0Y2Z)

The buffer is a standard Low Voltage Differential Signal (LVDS) buffer used as a Standard Mobile Imaging Architecture (SMIA) buffer.

The buffer can operate in the following two modes:

As a standard single-ended 1.8 V input buffer, also referred to as Single-ended (SE) Mode.

As a low voltage differential input buffer, also referred to as LVDS mode. In this mode, an LVDS input buffer has two input pads.

The termination resistor is separately controlled and must be disabled in mode 1.

The buffer is level-shifting.

The conditions are as defined in Section 11.2, unless otherwise specified.

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Table 17 SE mode characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface

- 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.35 VDDE V

VIH High-level input voltage - 0.65 VDDE - VDDE V

Vhys Hysteresis (VIT+ - VIT-) - 160 - - mV

IIL Low-level input current VIL -2 - 2 µA

IIH High-level input current VIH -2 - 2 µA

VIO IO-cell operating voltage - -0.3 - VDDE + 0.3 V

fmax Input cell frequency VIL, VIH - - 104 MHz

tDCout Input cell duty cycle out tDCin 50%, VIL, VIH 45 - 55 %

IZ Total IO cell leakage current - -1 - 1 µA

Table 18 Differential mode characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

IDDE Current consumption Rterm = 100 Ω, 330 MHz

- - 2.0 mA

IDDE Current consumption AC, µA/MHz - - 6.1 µA

VCM Differential input range 25

(VDDE/2) -0.30

VDDE/2 (VDDE/2) + 0.30

V

VTHL Differential input threshold low

- -25 - - mV

VTHH Differential input threshold high

- - - 25 mV

Rterm Internal termination resistor 25

75 100 125 Ω

fmax Input cell frequency CL = 5 pF - - 330 MHz

tDCout Input cell duty cycle out tDCin 50% 45 - 55 %

IZ Total IO cell leakage current - -1 - 1 µA

tPDup Power up time - - - 20 µs

tPDdwn Power down time - - - 20 µs

25 Outside the SMIA standard

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

11.4 I2C Input/Output cell

11.4.1 I2C bidirectional buffer 1.8/2.75 V

Vendor reference: I2C_MASTER_1 V8_2 V85T_LIN (IO65LPVT_SF_I2C_MASTER_1 V8_2 V85T_7M4X0Y2Z)

The cell can operate at both 1.8 V and 2.75 V bus voltage.

The buffer is level-shifting.

The IO cell is fail safe that is, the IO voltage may exceed the supply voltage.

The IO cell is designed for Fast mode with a maximum of 400 kbit/s.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 19 I2C bidirectional buffer 1.8/2.75 V characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

VDDE Supply voltage IO cell (low voltage mode)

fmax = 1 MHz 1.12 1.20 1.30 V

VDDE Supply voltage IO cell - 1.70 1.80 1.90 V

VIL Low-level input voltage - 0 - 0.3 VDDE V

VIH High-level input voltage - 0.7 VDDE - 2.85 V

VIH High-level input voltage (low voltage mode)

VDDE = 1.2 V VDDE - 2.85 V

VBUS Bus voltage - -0.5 - 2.85 V

Vhys Hysteresis (VIT+ - VIT-) - 0.1 VDDE - - mV

II Total IO cell leakage and input current at

VI = 0.1 VBUS and VI = 0.9 VBUS

VBUS = 1.80 V -10 - 10 µA

II Total IO cell leakage and input current at

VI = 0.1 VBUS and VI = 0.9 VBUS

VBUS = 2.75 V -10 - 10 µA

IIH High-level input current Fail safe mode -1 - 1 µA

fmax Input cell frequency VIL, VIH - - 400 kHz

fmax Input cell frequency VIL, VIH26

- - 24 MHz

tDCout Input cell duty cycle out tDCin 50%, VIL, VIH 45 - 55 %

26 Without glitch suppression

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

IOL Low-level output current - - - 3.00 mA

VOL Low-level output voltage IOL

VBUS = 1.80 V

0 - 0.20 VDD V

VOL Low-level output voltage IOL

VBUS = 2.75 V

0 - 0.4 V

fmax Output cell frequency CL = 10 - 400 pF27

- - 400 kHz

fmax Output cell frequency CL = 10-60 pF28

- - 400 kHz

tof Fall time from VIH min to VIL max CL = 10-400 pF29

20 + 0.1Cb - 250 ns

tSP Pulse width of spikes that have to be suppressed by the input filter.

- 0 - 50 ns

11.5 PLL

11.5.1 PLL_26x

Vendor reference: PLL_26x_CMOS065LP

The PLL output frequency (fout) is 397 times the input frequency (fin).

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 20 PLL_26x characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 0.95 1.20 1.35 V

VDDA Supply voltage to analog - 1.70 1.80 2.75 V

IDD Current consumption active mode VDD - 30 50 µA

IDD Current consumption active mode VDDA - 120 150 µA

IDDQ Current consumption power down VDD - 0.1 1 µA

IDDQ Current consumption power down VDDA - 0.1 1 µA

fin Input frequency - 32,440 32,768 33,096 Hz

tDCin Input duty cycle (including jitter) - 30 50 70 %

tr/tf Clock input rise and fall time - - - 2 ns

27 With an external 1.0 kΩ pull-up resistor 28 With an external 3.3 kΩ pull-up resistor 29 Cb = Capacitance of one bus line in pF

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tjitterin Input jitter -0.5 0.5 %

floop Loop filter cut off frequency - - 1800 - Hz

Load Cell drive capability - - - 0.35 pF

fout Output frequency - - 397 × fin - MHz

tDCout Output duty cycle (including jitter) - 45 50 55 %

tjitterout Output jitter -2 - 2 %

Pherr Static phase error - -250 - 250 ps

tlock Locking time - - - 30 ms

tPD Minimum width of Power Down (PDN) pulse required

- 2 - - ms

11.5.2 PLL_416x_A

Vendor reference: PLL_416x_A_CMOS065LP

The PLL can operate in the following modes, controlled by the SEL input signal:

The PLL output frequency (fout) is 8 times the input frequency (fin) when SEL = 1.

The PLL output frequency (fout) is 16 times the input frequency (fin) when SEL = 0. In this mode the input clock to the PLL could come from the PLL_26x (that is, PLL_26x and PLL_416x_A in series).

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 21 PLL_416x_A characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 0.95 1.20 1.35 V

VDDA Supply voltage to analog - 1.70 1.80 2.75 V

IDD Current consumption active mode VDD - 510 580 µA

IDD Current consumption active mode VDDA - 320 420 µA

IDDQ Current consumption power down VDD - 0.1 6 µA

IDDQ Current consumption power down VDDA - 0.1 1 µA

fin Input frequency SEL = 0 12.85 13 13.15 MHz

fin Input frequency SEL = 1 25.70 26 26.30 MHz

tDCin Input duty cycle (including jitter) - 30 50 70 %

tr/tf Clock input rise and fall time - - - 0.2 ns

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© Copyright ST-Ericsson 2009, 2010. All rights reserved. COMPANY CONFIDENTIAL

Symbol Parameter Condition Min. Typ. Max. Unit

tjitterin Input jitter -2 - 2 %

floop Loop filter cut off frequency - - 750 kHz

Load Cell drive capability - - - 0.35 pF

fout Output frequency SEL = 0 - 16 × fin - MHz

fout Output frequency SEL = 1 - 8 × fin - MHz

tDCout Output duty cycle (including jitter) - 45 50 55 %

tjitterout Output jitter -2 - 2 %

Pherr Static phase error - -200 - 200 ps

tlock Locking time - - - 100 µs

tPD Minimum width of PDN pulse required

- 10 - - µs

11.5.3 PLL_240x

Vendor reference: PLL_240x_CMOS065LP

The PLL generates the following output frequencies:

F60. The PLL output frequency fout60 = fin/13 × 30.

F48. The PLL output frequency fout48 = fin/13 × 24.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 22 PLL_240x characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 0.95 1.20 1.35 V

VDDA Supply voltage to analog - 1.70 1.80 2.75 V

IDD Current consumption active mode VDD - 425 480 µA

IDD Current consumption active mode VDDA - 130 160 µA

IDDQ Current consumption power down VDD - 0.1 1 µA

IDDQ Current consumption power down VDDA - 0.1 1 µA

fin Input frequency - 25.7 26 26.3 MHz

tr/tf Clock input rise and fall time - - - 0.2 Ns

tjitterin Input jitter -1 - 1 %

tDCin Input duty cycle (including jitter) - 30 50 70 %

floop Loop filter cut off frequency - - 120 - kHz

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Symbol Parameter Condition Min. Typ. Max. Unit

Load Cell drive capability - - - 0.35 pF

fout48 Output frequency - - fin/13 × 24 - MHz

fout60 Output frequency - - fin/13 × 30 - MHz

tDCout Output duty cycle (including jitter) fout48 40 50 60 %

tDCout Output duty cycle (including jitter) fout60 45 50 55 %

tjitterout Output jitter fout48 -400 - 400 ps

tjitterout Output jitter fout60 -400 - 400 ps

Pherr Static phase error - -250 - 250 ps

tlock Locking time - - - 100 µs

tPD Minimum width of PDN pulse required

- 20 - - µs

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11.6 Analog pads

The ANA_2 V5_LIN is a bidirectional pad for analog signals. It contains primarily Electrostatic Discharge (ESD) diode protections in parallel with the pad and a secondary diode protection after a serial resistor.

11.7 Converters

11.7.1 WCDMA I and Q Sigma-Delta ADC

Vendor reference: TL01_Converters

Unless otherwise specified, the minimum and maximum values are given for the process worst cases, that is the full junction temperature range (-30°C to 125°C) and the full supply voltage range (VDDA from 2.35 V to 2.65 V), and the typical values are specified at typical VDDA and temperature.

General conditions

The proposed converter is a second-order sigma delta modulator using a 3-bit quantizer (seven levels). Therefore, it must at least be followed by a second-order multi-rate decimation filter and a digital filter. A third-order decimator is suggested to have less in-band folding of the out-of-band noise coming both from the input and from the modulator itself.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 23 ADC specification

Parameter Condition Min. Typ. Max. Unit

VDDA - 2.35 2.5 2.65 V

VDDA current In active mode30

- 7.5 11 mA

VDDA leakage current In power down, CK steady, max. at 105°C

31

- 0.3 14 µA

Power Supply Rejection (PSR)

VDDAAD = 2.5 VDC+ 20 mVRMS, f < 100 kHz

Input voltage = 0

40

-

-

dB

Junction temperature tjunc -30 125 °C

30 The complete cell: I and Q ADC + common parts + reference buffers (one for each ADC), but without the band gap reference

generator (common to all ADCs and DACs). The maximum value is at 125°C and in worst process conditions. 31 Half cell:1(I+Q) ADC + their service circuits.

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Parameter Condition Min. Typ. Max. Unit

Maximum input voltage Differential peak-to-peak

32

- 2 - V

Input signal bandwidth - 2.2 2.2 2.2 MHz

Input Common Mode Voltage (ICMV) - 0.75 - VDDA - 0.75 V

Output offset for both inputs connected to a fixed common mode voltage

33 -30 - +30 mV

Signal to Noise and Distortion ratio (SINAD) input level -2 dB

[2.2 MHz bandwidth]

CK = 46.08 MHz

Vin = 1.59 Vppd

fin ≤ 2.2 MHz 34

40 - - dB

SINAD input level -6 dB

[2.2 MHz bandwidth]

CK = 46.08 MHz

Vin = 1 Vppd

fin ≤ 2.2 MHz

40 - - dB

SINAD input level -32 dB

[2.2 MHz bandwidth]

CK = 46.08 MHz

Vin = 50 mVppd

fin ≤ 2.2 MHz

14 - - dB

SINAD input level 0 dB

[2.2 MHz bandwidth]

CK = 46.08 MHz

Vin = 2 Vppd

fin ≤ 2.2 MHz 35

- 10 - dB

I/Q amplitude mismatch - -0.2 - +0.2 dB

I/Q phase mismatch - -1 - +1 Degrees

Equivalent input impedance Each input36

20 - - kΩ

In-band ripple (up to 1.7 MHz) Referred to DC value -0.1 - +0.1 dB

In-band ripple (from 1.7 MHz to 2.2 MHz)

Referred to DC value

37

-0.3 - +0.3 dB

Output gain error DC value38

-0.3 - +0.3 dB

Output gain variation with temperature Referred to 27°C value

39

-0.4 - +0.4 dB

32 The signal level normally does not exceed this value, so there is no need to design any headroom in the modulator. The reference

voltage can also be set to this value. If an over-voltage exceeds this value, the modulator immediately and automatically recovers when the input returns to the normal values. The input of the converter is assumed to be DC coupled to the source voltage generator.

33 The value is constant in time and almost independent of supply voltage variations. It changes slightly with temperature (typ. ± 10% over all the temperature range).

34 For out-of-band signals (2.2 MHz < fin < 23.04 MHz, Vin ≤ 1.59 Vppd), there is no degradation of the in-band noise. 35 For 1.59 V < Vin < 2 V, there is a increasing clipping of the output wave form. 36 Equivalent Rin = 1/(2 × fs × Cs), where fs = sampling frequency and Cs = input switched capacitor 37 There is no out-of-band peaking in the gain. The gain starts decreasing after 2.2 MHz. 38 The reference voltage error is excluded in the calculation. 39 This is the variation of the gain, in the full temperature range, for one sample of the ADC, including the reference voltage.

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Parameter Condition Min. Typ. Max. Unit

Startup time (ADC Power Down (PDAD) from 1 to 0)

40 - - 250 µs

Activation time 41

- 50 - µs

Sampling clock Jittered clock - 46.08 - MHz

CK period - 19.23 - 24.04 ns

Output data width 42

- 3 - bits

Output data rate (sampling clock) - 46.08 - MHz

11.7.2 WCDMA I/Q 10 bit D/A converters and smoothing filters

Vendor reference: TL01_Converters

Unless otherwise specified, the minimum and maximum values are given for the process worst cases, that is the full junction temperature range (-30°C to 125°C) and the full supply voltage range (VDDA from 2.35 V to 2.65 V), and the typical values are specified at typical VDDA and temperature.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 24 DACs and smoothing filters specification

Parameter Condition Min. Typ. Max. Unit

VDDA - 2.35 2.5 2.65 V

VDDA current In active mode43

- 6.5 8 mA

VDDA leakage current In power down, CKDA and input data steady max. at 105°C

- 0.2 15 µA

PSR

VDDADA = 2.5 VDC+ 20 mVRMS, f < 100 kHz

Input code = 000H

40

- -

dB

Junction temperature tjunc -30 - 125 °C

Analog output (differential)

40 Measured from the time that the power down is released to the time when the converter is within the specification (the startup of the

reference is assumed to be already finished). 41 Measured from the time that the power down is released to the time when the converter is functional (startup of reference finished) 42 The three output bits format is two’s complement. The equivalent decimal content is between +3 and -4. To have symmetrical +7/-7

values and avoid systematic offset, it is necessary to add an LSB fixed to 1 (the final word length 4 bits). 43 The complete cell: I and Q DACs and filters + common parts + the reference buffer, but without the band gap reference generator

(common to all ADCs and DACs). The maximum value is at 125°C and in worst process conditions.

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Parameter Condition Min. Typ. Max. Unit

SINAD with full-scale output voltage = 2 Vppd

[2 MHz bandwidth]

CKDA = 52 MHz

fin ≤ 2 MHz

1 < Vout < 2 Vppd

44

56 - - dB

Peak Harmonic or Spurious Noise (SFDR) [0-26 MHz] with full-scale output voltage = 2 Vppd

CKDA = 52 MHz

fin ≤ 2 MHz

1 < Vout < 2 Vppd

44

- - -57 dB

SINAD with full-scale output voltage = 1.8 Vppd

[2 MHz bandwidth]

CKDA = 52 MHz

fin ≤ 2 MHz

1.2 < Vout < 1.8 Vppd

44

56 - - dB

SFDR [0-26 MHz] with full-scale output voltage = 1.8 Vppd

CKDA = 52 MHz

fin < 2 MHz

1.2 < Vout < 1.8 Vppd

44

- - -57 dB

SINAD with full-scale output voltage = 1.6 Vppd

[2 MHz bandwidth]

CKDA = 52 MHz

fin ≤ 2 MHz

1.3 < Vout < 1.6 Vppd

44

57 - - dB

SFDR [0-26 MHz] with full-scale output voltage = 1.6 Vppd

CKDA = 52 MHz

fin ≤ 2 MHz

1.3 < Vout <1.6 Vppd

44

- - -58 dB

SINAD with full-scale output voltage = 1.4 Vppd

[2 MHz bandwidth]

CKDA = 52 MHz

fin <2 MHz

1.3 < Vout < 1.4 Vppd

44

58 - - dB

SFDR [0-26 MHz] with full-scale output voltage = 1.4 Vppd

CKDA = 52 MHz

fin ≤ 2 MHz

1.3 < Vout < 1.4 Vppd

44

- - -59 dB

44 Sine wave input signal.

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Parameter Condition Min. Typ. Max. Unit

Differential out-of-band noise spectral density (with any fixed input code)

f > 2 MHz

f = 2 MHz

f = 5 MHz

f = 10 MHz

f = 50 MHz

F = 200 MHz

-

-

-

-

-

-

-

45

32

25

18

3

60

-

-

-

-

-

nVRMS/ Hz

nVRMS/ Hz

nVRMS/ Hz

nVRMS/ Hz

nVRMS/ Hz

nVRMS/ Hz

Cutoff filter frequency (-3 dB) CKDA = 52 MHz 3.72 4.0 4.28 MHz

Filter+sinc attenuation at 50 MHz CKDA = 52 MHz 64 - - dB

In-band ripple (up to 2 MHz) CKDA = 52 MHz45

-0.5 - +0.2 dB

Full-scale output voltage Differential peak-to-peak.

200 mV step regulation.46

1.4 - 2.0 V

Common mode output voltage 25 mV step regulation47

1.15 - 1.45 V

Differential output offset error

(Input code: 000H)

No offset cancel

With offset cancel48

-50

-2

-

-

+50

+2

mV

mV

Offset drift with temperature - -3 - +3 mV

Output gain error 49

-0.3 - +0.3 dB

Output gain variation with temperature Referred to 27°C value50

-0.25 - +0.25 dB

Common mode offset error 51

-20 - +20 mV

Resistive output load - Rdiff 52

10 - - kΩ

Capacitive output load - Cdiff 52

- - 12 pF

Capacitive output load - Csp, Csm 52

- - 5 pF

Output impedance - - - 130 Ω

Output impedance in power down 53

6.5 - kΩ

45 Refers to the DC value. The minimum value of -0.5 dB is because of the attenuation at 2 MHz of the smoothing filter having a typical -

3 dB cut-off frequency at 4 MHz. 46 2 bits are necessary for this regulation: SELFS(1:0). 00 ≥ 1.4 V, 01 ≥ 1.6 V, 10 ≥ 1.8 V, 11 ≥ 2.0 V. 47 4 bits are necessary for this regulation: VCMREG(3:0). Table 25 describes the correspondence between the VCMREG(3:0) bits and

the common mode output voltage. 48 1 bit is necessary for this cancellation (OFFCAN). The cancellation request is managed externally to the cell. The request can be done

only when the reference voltage and the converter itself are already active (after startup). The cancellation is activated on the rising edge of OFFCAN and the cancellation time is 50 µs max. No specific timing is necessary for the relation between the clock edges and OFFCAN edges. The value with offset cancellation is guaranteed for a fixed output range and a fixed common mode voltage. If the output range or the common mode is changed, a new offset cancellation must be done to obtain this value.

49 The Vref voltage error is excluded in the calculation. 50 This is the variation of the gain, in the full temperature range, for one sample of the DAC, including the band gap reference voltage. 51 The Vref voltage error is excluded in the calculation. A variation of the reference results in a common mode voltage variation

according to this rule: ΔVcm/Vcm = ΔVref/Vref 52 See Figure 10.

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Parameter Condition Min. Typ. Max. Unit

I/Q amplitude mismatch - -0.3 - +0.3 dB

I/Q phase mismatch - -1.5 - +1.5 Degrees

Startup time (PDDA from 1 to 0) 54

- - 250 µs

Activation time 55

- 50 µs

Sampling clock 56

51 52 53 MHz

Input data width Two’s complement56

10 10 10 bits

Input data rate (Sampling clock)56

51 52 53 MHz

Table 25 VCMREG (3:0) and VCM OUT correspondence

VCMREG(3:0) 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 11XX

VCM OUT 1.15 1.175 1.2 1.225 1.25 1.275 1.3 1.325 1.35 1.375 1.4 1.425 1.45

Figure 10 illustrates the output load configuration.

Figure 10 Output load configuration

11.7.3 General purpose ADC

Vendor reference: TL01_Converters

53 The impedance is between the two outputs of each converter. The circuit outputs are in high impedance versus the power supplies. 54 Measured from the time that the power down is released to the time when the converter is within the specification (the startup of the

reference is assumed to be already finished) 55 Measured from the time that the power down is released to the time when the converter is functional (startup of the reference

finished). 56 The clock must be present before the power down is released.

Rdiff

Csp

Csm

OP(I, Q)Q

OM(I, Q)Q

Cdiff

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Unless otherwise specified, the minimum and maximum values are given for the process worst cases, that is the full junction temperature range (-30°C to 125°C) and the full supply voltage range (VDDA from 2.35 V to 2.65 V), and the typical values are specified at typical VDDA and temperature.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 26 General purpose ADC specification

Parameter Condition Min. Typ. Max. Unit

VDDA - 2.35 2.5 2.65 V

VDDA current In active mode57

- - 0.7 mA

VDDA leakage current In power down, max. at 105°C

- 0.2 5 µA

Junction temperature tjunc -30 125 °C

Resolution - 10 10 10 bits

Minimum full-scale input range All errors included (also reference variations)

- - 1.2 V

Maximum full-scale input range All errors included, (also reference variations)

58

2.35 - - -

Programmable full-scale range step 10-step regulation59

- 200 - mV

Integral Non-linearity (INL) - -1 - +1 LSB

Differential Non-linearity (DNL) - -0.8 - +0.8 LSB

Offset error - -10 - +10 LSB

Conversion gain variation All errors included60

-10 - +10 %

Conversion gain temperature sensitivity - -0.0025 - 0.0025 dB/°C

Conversion gain temperature sensitivity variation between devices. Reference included.

Calibration temperature = 30°C

(junction temp.)61

-0.7 - 0.7 %

57 Mean consumption during conversion time (15 µs) 58 The specification is fulfilled for input voltages below 2.35 V. No voltages above 2.35 V are present at the ADC input. 59 The step resolution for the converter, excluding the reference variations, is 1 LSB according to the desired input

ranges. 60 The gain variations are because of the reference variations (both with process and temperature) plus non-idealities inside the

converter itself. The selectable input ranges can be calculated for these gain errors as illustrated in Table 27 A 4-bit selection code is needed to choose the range in order to fulfill the worst case requirement in Table 26 for the full-scale input range (max. FSRMin and min. FSRMax) with 0.2 V nominal step resolution. Margins A = 0.2 V and B = 0.45 V are needed on Nom FSRMin and Nom FSRMax, as illustrated in Figure 11.

61 Conversion gain temperature sensitivity requirements limit the slope near 30°C. The nominal characteristic of gain temperature

sensitivity is a second order polynomial of the type Y = mX2 + nX + p with a minimum at 30°C and with m = 3.5897 × 10-7,

n = -1.985 × 10-5, p = 0.99629. Figure 12 defines the possible area of variation with temperature of the gain characteristics with

different devices, assuming that these characteristics are normalized to the typical reference value at 30°C.

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Parameter Condition Min. Typ. Max. Unit

Input capacitance, switched capacitor during sampling

62 - - 5 pF

Input capacitance, total excluding switched capacitor

62 - - 5 pF

Input leakage current 62 -20 - +20 nA

Equivalent input resistance 62 5 - - MΩ

Output data width Binary63

- 10 - bits

Table 27 shows the input ranges selection, starting at 1 V with nominal 0.2 V step resolution and with regards to the worst gain errors.

Table 27 Input ranges selection

Nominal input range Selection code Worst gain error +10%

Worst gain error -10%

Equivalent input range

0 to 1.0 V 0000 0 to 0.90 V 0 to 1.10 V

0 to 1.2 V 0001 0 to 1.08 V 0 to 1.32 V

0 to 1.4 V 0010 0 to 1.26 V 0 to 1.54 V

0 to 1.6 V 0011 0 to 1.44 V 0 to 1.76 V

0 to 1.8 V 0100 0 to 1.62 V 0 to 1.98 V

0 to 2.0 V 0101 0 to 1.80 V 0 to 2.20 V

0 to 2.2 V 0110 0 to 1.98 V 0 to 2.42 V

0 to 2.4 V 0111 0 to 2.16 V 0 to 2.64 V

0 to 2.6 V 1000 0 to 2.34 V 0 to 2.86 V

0 to 2.8 V 1001 0 to 2.52 V 0 to 3.08 V

0 to 2.8 V 1010 1111 0 to 2.52 V 0 to 3.08 V

62 See Figure 14 for the input equivalent circuit. When the sampling switch is open, the input resistance is RTOT, which is much higher

than the minimum 5 MΩ value of the specification. During sampling, the 5 pF switched capacitor can be seen as an equivalent resistance RSW in parallel with RTOT (RSW // RTOT > 5 MΩ). The equivalent input resistance affects the input signal value of a quantity depending on the source equivalent resistance. CTOT is the total parasitic capacitance at the input pad. ILEAK is the leakage current of the junctions and of the protections connected to the pad plus the subthreshold current of the sampling switch when opened.

63 The value of the output data GPADD (9:0) is undetermined from the time that the supply voltage is applied to the first conversion result.

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Figure 11 illustrates the specification of the programmable full-scale range of the GP ADC.

FSRMaxFSR

Min

Max FSRMin

Min FSRMax

Guaranteed FSR

Nom FSRMax

Nom FSRMin

A B

FSR (V)

Figure 11 Specification of the programmable full-scale range of the GP ADC

Figure 12 illustrates the nominal conversion gain variation with temperature characteristic (bold black line) and the permitted area of variation with different devices (red dashed region).

Figure 12 Nominal conversion gain variation and permitted area of variation with different devices

Convers

ion g

ain

+125°C

Slope = +0.0025 dB/°C Slope = -0.0025 dB/°C

-30°C +30°C

(0.99602)

(Y1)

(Y2)

(Y1 + 0.7%)

(Y1 - 0.7%)

(Y2 + 0.7%)

(Y2 - 0.7%)

Nominal curve: Y = 3.5897 × 10-7

X2 - 1.985 × 10

-5X + 0.99629

Temperature

Different devices within specification Nominal characteristic

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Figure 13 illustrates the equivalent input circuit for the GP ADC.

Figure 13 Equivalent input circuit for the GP ADC

11.7.4 Band gap reference voltage generator and central bias current generator

Vendor reference: TL01_Converters

Unless otherwise specified, the minimum and maximum values are given for the process worst cases, that is the full junction temperature range (-30°C to 125°C) and the full supply voltage range (VDDA from 2.35 V to 2.65 V), and the typical values are specified at typical VDDA and temperature.

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 28 Reference voltage and bias current generators specification

Parameter Condition Min. Typ. Max. Unit

VDDA - 2.35 2.5 2.65 V

VDDA current In active mode - 0.9 1.3 mA

VDDA leakage current In power down, CK steady max. at 105°C

- 0.1 3 µA

Junction temperature tjunc -30 - 125 °C

Reference voltage value At 27°C64

0.94 1 1.06 V

Reference variation with temperature - - - 1.35%

Temperature coefficient, see Figure 14 65

-160 - +160 Ppm/°C

Startup time (PDCOMMON from 1 to 0) - - - 500 µs

Activation time 66

- 50 - µs

64 This precision can be obtained with a sampled differential band gap without trimming and external components. The reference value

is almost independent of the power supply level. 65

Figure 14 illustrates the reference voltage temperature coefficient. The reference voltage variation with temperature has a parabola-like behavior. The inclination of the parabola can change. The Vmax and Vmin are the maximum and minimum value voltage points of the parabola. These points define the temperature value points TVmax and TVmin. Vref is the nominal reference voltage.

ILEAK CTOT CSW RSW

Input pad

Sampling switch

RTOT

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Figure 14 illustrates the temperature coefficient definition for the reference voltage.

Figure 14 Temperature coefficient definition for the reference voltage

11.8 Random noise generator

Vendor reference: t1xp_rng_65lp_top_ana_SNPS-AVT-CDS

The conditions are as defined in Section 11.2, unless otherwise specified.

Table 29 Random noise generator characteristics

Symbol Parameter Condition Min. Typ. Max. Unit

VDD Supply voltage core interface - 1.12 1.20 1.30 V

IDD Current consumption norm operation VDD - - 20 µA

IDDQ Current consumption power down VDD - - 1 µA

SR Sampling rate - 27 - 48 MHz

N Sequence length for equiprobability test - - - 1000 bits

tST Startup time - - - 1 µs

FT1 Voltage-controlled Oscillator (VCO) frequency in test mode 1

- - 20 - MHz

FT2 VCO frequency in test mode 2 - - 30 - MHz

FT3 VCO frequency in test mode 3 - - 40 - MHz

66 Measured from the time that the power down is released to the time when the band gap is functional.

Vmax

Vmin

V

T/°C

Vrefmax

Vrefmin

TVmin

TVmax

minmax

minmax1..

VVref TT

VV

VcoeffTemp

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11.9 IO cell requirements

The load and maximum operating frequency of the IOs are defined in Reference 82H[6].

11.10 Operation modes

To reduce the power consumption, the device can operate in two main modes: Active and Idle. In each of these modes, various sub modes are defined depending on the clock gating. In Table 30, the maximum clock frequency is defined for the subsystems and the main modes of operation.

Table 30 Operation modes

Mode name Core voltage [V]

Access mode name

Application mode name

Fast 1.2 Active Active

- 1.2 Active Low Power

- 1.2 Sleep Active

Low Power 1.2 Sleep Low Power

Idle 1.05 Sleep Low Power

11.10.1 Clock frequencies

In the tables in Subsections 11.10.1.1 and 11.10.1.2, Active mode means 1.2 V core supply and Idle mode means 1.05 V core supply.

11.10.1.1 Application subsystem

Table 31 specifies the Application subsystem clock frequencies.

Table 31 Application subsystem clock frequencies

Block/System name Active Idle/Low Power Unit

ARM926 208 13 MHz

AHB matrix 52 6.5 MHz

Application EMIF (SDRAM)

104 13 MHz

Application NFIF (Static) 104 6.5 MHz

MSL 52 6.5 MHz

DMA 52 6.5 MHz

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Block/System name Active Idle/Low Power Unit

XGAM 52 6.5 MHz

Peripherals 52/26/13 13 MHz

Video encoder 208 6.5 MHz

APEX 52 6.5 MHz

11.10.1.2 Access subsystem

Table 32 specifies the Access subsystem clock frequencies.

Table 32 Access subsystem clock frequencies

Block/System name Active Idle/Sleep Unit

ARM926 208 0 MHz

AHB matrix 52 0 MHz

EMIF 104 0 MHz

MSL 52 050F

67 MHz

DMA 52 0 MHz

DSP 208 0 MHz

EGG 104/52/26 0 MHz

WCDMA 104/52/26 0 MHz

WDOG 26 and 32 32 kHz

Peripherals 26 and 48 087H

67 MHz

11.11 Power-on sequence

The core VDD supply must be stable above 0.9 V, and the PWR_RST held low, for at least 1 µs before VDD_AF ramps above 1.0 V. During power down, the reverse sequence must be ensured. Violating these requirements may cause uncontrolled fusing in the on-chip One Time Programmable Memory (OTP).

67

Some blocks must be able to wake up by asynchronous detection.

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Digital baseband controller Data sheet Test modes

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12 Test modes

12.1 Chip modes

The chip modes are defined by the EMU_MODE_1 and EMU_MODE_0 signals when the TRST_N signal is deactivated. The default mode is Single Full Test Access Port (TAP) Emulation mode.

Table 33 Chip mode selection

EMU_MODE_1 EMU_MODE_0 TRST_N Description

1 1 0 Mission mode

1 1 1 Single Full TAP Emulation mode

1 0 1 Single Application TAP Emulation mode

0 1 1 Dual TAP Emulation mode (DSP on a separate multiplexed JTAG interface. The Multiplexer (MUX) is controlled by the System Controller (SYSCON))

0 0 1 Production TEST mode - Boundary Scan (BS) - MBIST - SCAN - IDDQ - Analog cell test - Fuse mode - HIGHZ

Table 34 TAP configuration

EMU_MODE_1 EMU_MODE_0 Comment

1 1 JTAG IO CHIP TAP DSP TAP Access ARM TAP

Application ARM TAP JTAG IO

1 0 JTAG IO Application ARM TAP JTAG IO

0 1 JTAG IO Access ARM TAP Application ARM TAP JTAG IO +

Multiplexed JTAG IO DSP TAP Multiplexed JTAG IO

0 0 JTAG IO CHIP TAP JTAG IO

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12.2 Production test mode

The Test mode can be used during PCB test BS to get the highest possible speed.

Table 35 defines the primary Join Test Action Group (JTAG) chain in Test mode.

Table 35 Primary JTAG chain in Production Test mode

TAP Comment IR size BS size

Chip Digital baseband controller TAP 5 801

12.3 JTAG emulation mode

89HTable 36 defines the JTAG chains in Emulation mode.

Table 36 JTAG Emulation mode

TAP Comment IR size BS size Order

Chip Digital baseband controller TAP 5 801 1

DSP DSP CEVA-X 1620 TAP 32 - 2

CPU CPU ARM926 Access TAP 4 - 3

CPU CPU ARM926 Application TAP 4 - 4

Table 37 TAP ID register

Bit Comment

31-28 Version

27-12 Part number

11-1 Manufacturer ID

0 Always high

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13 Definitions

13.1 Jitter

13.1.1 Sigma

The sigma value is based on the requested up-time and the Bit Error Rate (BER).

13.2 Duty cycle

If nothing else is specified, the duty cycle is defined as positive.

The duty cycle is defined at 50% of the supply.

13.3 Timing

13.3.1 Rise and fall time

If nothing else is specified, the rise and fall time is defined as 20-80% of the supply.

13.3.2 Other timing

If nothing else is defined, timing is defined at 50% of the supply.

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Glossary

AAIF Application to Access Interface

AC Alternating Current

ADC Analog to Digital Converter

AHB ARM High-Speed Bus

AMBA Advanced Microprocessor Bus Architecture

APEX Audio Processing Execution

APLL Analog Phase Locked Loop

ARM Advanced RISC Machine

BER Bit Error Rate

BIST Built-in Self Test

BS Boundary Scan

CAMISP Camera Integrated Signal Processing

CDS Camera Data Synchronizer

CHIPCON Chip Controller

CK Clock

CKDA Clock D/A Converter

CMOS Complementary Metal Oxide Semiconductor

CPU Central Processing Unit

CRC Cyclic Redundancy Check

CRU Code Replacement Unit

D/A Digital/Analog

DAC Digital to Analog Converter

DB Digital Baseband

DC Direct Current

DFT Design for Test

DMA Direct Memory Access

DMAC Direct Memory Access Controller

DMUC Dynamic Memory Use Counters

DNL Differential Non-linearity

DSP Digital Signal Processor

DSPSUB Digital Signal Processor Subsystem

ECC Error Code Correction

EDC ST-Ericsson Discretix Crypto Cell

EDGE Enhanced Data Rate for GSM Evolution

EGG EDGE/GSM/GPRS

EMIF External Memory Interface

ESD Electrostatic Discharge

ETM Embedded Trace Macrocell

ETX Enable Transmission

FBGA Fine Pitch, Square Ball Grid Array Package

FIFO First In First Out

FIQ Fast Interrupt Request

FIR Fast Infrared

FSM Finite State Machine

FSR Full-scale Range

GP General Purpose

GPADD General Purpose ADC Data

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GPIO General Purpose Input/Output

GPRS General Packet Radio Services

GSM Global System for Mobile communication

HSDPA High-speed Downlink Packet Access

HSUPA High-speed Uplink Packet Access

I&D Instruction and Data

I/Q In-phase Signal/Quadrature Phase Signal

I2C Inter-integrated Circuit

I2CIF I2C Interface

I2S Integrated Interchip Sound

IC Integrated Circuit

ICMV Input Common Mode Voltage

ICU Interrupt Controller Unit

ID Identity

INL Integral Non-linearity

INTCON Interrupt Controller

IO Input, Output

IP Intellectual Property

IR Instruction Register

IRAM Internal Random Access Memory

IrDA Infrared Data Association

IRQ Interrupt Request

JPEG JPEG file interchange format

JTAG Join Test Action Group

KiB Kilo binary byte - A unit of information or computer storage, 1 KiB = 2

10 bytes =

1,024 bytes

LSB Least Significant Bit

LVDS Low Voltage Differential Signal

MCLK Master Clock

ME Mobile Equipment

MemBIST Memory BIST

MiB Mega binary byte - A unit of information or computer storage, 1 MiB = 2

20 bytes

= 1,048,576 bytes

MIDI Music Industry Digital Interface

MIR Medium Infrared

MLCK Master Clock

MMC Multimedia Memory Card

MMU Memory Management Unit

MSB Most Significant Bit

MSL Mobile Scalable Link

MUX Multiplexer

NAND flash Non-volatile flash memory offering multimedia and Internet capability

NFIF Flexible Static Memory Controller Interface

NOR flash Non-volatile flash memory for mobile and digital applications

OS Operating System

OTG On-The-Go USB 2.0

OTP One Time Programmable Memory

PCB Printed Circuit Board

PCM Pulse Code Modulation

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PDAD ADC Power Down

PDN Power Down

PDROM Program Data Read Only Memory

PHY Physical level software for WCDMA

pin A pin is a part of a male connector. The description of the signal associated with each pin in a connector is called a pinout.

PLL Phase-Locked Loop

PMT Parallel Multiplexed Test

PMU Power Management Unit

PoP Package on Package

PSR Power Supply Rejection

PVT Process, Voltage, and Temperature

RAM Random Access Memory

RISC Reduced Instruction Set Computer

RMS Root Mean Square

RNG Random Noise Generator

ROM Read-only Memory

RS232 Recommended standard 232. Serial interface standard approved by EIA.

RTC Real-time Clock

SCP Single Chip Package

SD Secure Digital

SDIO Secure Digital Input/Output

SDR Single Data Rate

SDRAM Synchronous Dynamic Random Access Memory

SE Single-ended

SEMIF Shared External Memory Interface

SFDR Peak Harmonic or Spurious Noise

SIG Special Interest Group

SIM Subscriber Identity Module

SIMIF Subscriber Identity Module Interface

SINAD Signal-to-Noise and Distortion ratio

SIR Slow Infrared

SMIA Standard Mobile Imaging Architecture

SPI Serial Peripheral Interface

SRAM Static Random Access Memory

SYSCLK System Clock

SYSCON System Controller

TAP Test Access Port

TCM Tightly Coupled Memory

TX Transceiver

UART Universal Asynchronous Receiver/Transmitter

ULPI USB Low Pin Interface

USB Universal Serial Bus

VCO Voltage Controlled Oscillator

VFBGA Very Thin profile Fine pitch Ball Grid Array

WCDMA Wideband Code-division Multiple Access

WDOG Watchdog

XGAM Graphics Hardware Subsystem

XTAL Crystal


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