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Device Characterization

1

2

Transistor Modeling

Testing Measuring the dc, S-parameters, noise parameters, etc.

Parameters extraction Small-signal model

Large-signal model

Extracting the parameters of the equivalent circuits or equations

Creating model

Comparison of the measured and simulated results Bias-dependent S-parameters, IV characteristics, RF load-pull data

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Transistor Testing

DC characteristics (DCIV)

Semiconductor parameter analyzer

RF characteristics (Sparameters)

Vector network analyzer

Semiconductor parameter analyzer

Bias T

Calibration

Vector Network

Analyzer (8510)

Semiconductor

Parameter Analyzer

(4156)

DUTBias T Bias T

4

Devices Measurement

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Calibration Using Open Pad

Y1 Y2

Y3

6

Y1 Y2

Y3

11 1221 22

DUT

Y YY

Y Y

11 1 3 12 3

21 3 22 2 3

Y Y Y Y Y Y

Y Y Y Y Y

1 3 3PAD

3 2 3

Y Y YY

Y Y Y

- PAD DUT Y Y Y

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Two-Step Calibration

Y

SHORTY

OPENY

1 1 3 3

3 2 3

L L L

SHORT OPEN

L L L

Z Z Z Y Y

Z Z Z

1 1

OPEN SHORT OPEN DUT Y Y Y Y Z

M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G Versleijen, Animproved de-embedding technique for on-wafer high-frequency

characterization, Proceedings of the 1991 Bipolar Circuits and

Technology Meeting, pp. 188-191, Sept. 1991

8

SOLT CalibrationS: Short, O: Open O: Open, S: Short T: ThroughL: Load

Characteristics of the all calibration kits are needed

Short:

Open:

Load:

Limitation: accuracy of the models of the calibration kits

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TRL Calibration

Characteristic impedance and

length of the line are needed

Limitation: frequency range (20 ~

160 degree of the line)

Multi-Line TRL calibration

T: Through R: Reflect (short or open)

L: Line

G. F. Engen, and C. A. Hoer, Thru-Reflect-Line: an improved technique for calibrating the dual six-

port automatic network analyzer,IEEE Trans. Microw. Theory Tech., vol. 51, no. 4, pp. 1076-1085,

Apr. 2003.

10

Diode Modeling

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Diode

Mixer, frequency multiplier, switch, phase shifter

Schottky diode

Drain-source connected HEMT

Mixer, frequency multiplier

PIN diode

Switch, phase shifter

Schottky

Ohmic

12

Diode Model

Nonideal diode current equation

V: voltage across junction

K: Bolzmanns constant (1.37 x 10-23 J/K)

T: absolute temperature

q: 1.6 x 10-19 C

: Ideality factor

jC

SR

Ideal diode current equation

0 1qV

KT I V I e

0 1qV

KT I V I e

Diode model

Nonlinear resistor (current source)

Nonlinear capacitor

Series resistor

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1

2

0 1

qV

KT

S

V

I I e R

2V

SR

1V

I

2 SV IR

1 2 0ln ln SKT

V V V I I IRq

S

dV KT R

dI qI

0.2 0.4 0.6 0.8 1.0 1.2 1.40.0 1.6

10

20

30

40

0

50

Vd

I_Probe1.i,mA

0.2 0.4 0.6 0.8 1.0 1.2 1.40.0 1.6

-30

-25

-20

-15

-10

-5

-35

0

Vd

ln(I_

Probe1.i

)

High current

0ln lnKT

V I Iq

Low current

0ln lnqV

I IKT

0

1 lnI

I

q

KTV

14

Capacitance-Voltage Characteristic

Voltage-dependent capacitor

Reverse-voltage capacitive effect of

the depletion region

Forward-voltage charge represented

by mobile carriers in the diode

junction

0

1/2C

1 /

j

j

j

C

V

Cj0: zero-bias value

: junction barrier potential

2

0

21 /

j

j

j

CV

C

jV

21/ jC

-0.5 0.0 0.5-1.0 1.0

100

200

300

400

0

500

Vd

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Build a Diode Model Using

Symbolically Defined Devices (SDD) inADS

16

Voltage Control Current Source

Eqn Based-Nonlinear SDD1P

jC

SR

0 1qV

KT I V I e

File Design Parameters

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Voltage Control CapacitorjC

SR

Implicit equation defining a nonlinear

relationship of port voltages and port

currents

1 2 1 2, ,..., , , ,..., 0n nf V V V I I I

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Diode Model

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Diode Modeling Example

20

DCIV

Export IV data

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Read Measured IV Data Data Item DAC

22

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andI0 Extraction

0 0ln lnVI I slopeq

KT

24

S

dV KT R

dI qI

RSExtraction

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IV Comparison

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Read Measured Sparameters

Data Item DAC

Eqn Based-Linear S2P_Eqn

Simulate S-parameters: -1 V ~ 0.5 V

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Cj0 and

2

0

21 /

j

j

j

CV

C

0 0j j j V C C

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S-Parameters Comparison

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Exercise: Diode Modeling

Data

DCIV: Diode_IV_Measurement.ds

S-parameters: Diode_S_Measurement_xxum.ds

Modeling

Use SDD in ADS

Diode size: 20, 40, 60, 80 m

List your model parameters in a table DCIV

S parameters (0 V, 0.5 V, -0.5 V)