2015 International Conference on Compound Semiconductor Manufacturing Technology
May 18th – 21st, 2015 www.csmantech.org
Hyatt Regency Scottsdale Resort & Spa at Gainey Ranch
Scottsdale, Arizona, USA
2 2015 CS ManTech
Photographs courtesy of
Scottsdale Convention & Visitors Bureau
Hyatt Regency Scottsdale Resort & Spa
2015 CS ManTech 3
CONFERENCE AT A GLANCE
SUNDAY, May 17th
6:00 PM – 8:00 PM REGISTRATION Vaquero A&E Booths MONDAY, May 18th 7:00 AM – 7:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:00 AM CS MANTECH
BREAKFAST Arizona Ballroom IV 8:00 AM – 4:45 PM CS MANTECH
WORKSHOPS Arizona Ballroom I-III 7:00 AM – 8:15 AM ROCS BREAKFAST Arizona Ballroom V 8:30 AM – 5:00 PM ROCS WORKSHOP Arizona Ballroom VI-VIII 12:30 PM – 1:30 PM LUNCHEON FOR
WORKSHOPS Arizona Ballroom IV-V 6:00 PM – 9:00 PM EXHIBITS RECEPTION Vaquero Ballroom TUESDAY, May 19th
7:00 AM – 5:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero Ballroom – Exhibits 8:30 AM – 9:00 AM OPENING CEREMONIES Arizona Ballroom 8:30 AM – 5:20 PM EXHIBIT HOURS Vaquero Ballroom 9:00 AM – 9:30 AM KEYNOTE: Prof. Hiroshi
Amano – Nobel Prize for Physics
Arizona Ballroom 9:30 AM – 11:00 AM SESSION 1: PLENARY
Arizona Ballroom 11:00 AM – 1:00 PM EXHIBITS LUNCH Vaquero Ballroom
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1:00 PM – 2:50 PM SESSION 2: COMPOUND SEMICONDUCTOR TRENDS
Arizona Ballroom 2:50 PM – 3:40 PM BREAK Vaquero Ballroom – Exhibits 3:40 PM – 5:20 PM SESSION 3: GaN
MANUFACTURING Arizona Ballroom 5:30 PM – 6:30 PM EXHIBITORS’ FORUMS Dunes A-B, Markland
Boardroom, Hyatt Boardroom 5:30 PM – 6:30 PM STUDENT FORUM Arroys E 7:00 PM –10:00 PM INTERNATIONAL
RECEPTION Buses Depart at 6:30 PM WEDNESDAY, May 20th 7:00 AM – 5:00 PM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero Ballroom – Exhibits 8:00 AM – 9:40 AM SESSION 4: MATERIALS
Arizona Ballroom I-IV 8:00 AM – 9:40 AM SESSION 5:
METALIZATION Arizona Ballroom V-VIII 8:30 AM – 11:00 AM EXHIBIT HOURS Vaquero Ballroom 9:40 AM – 10:20 AM BREAK Vaquero Ballroom - Exhibits 10:20 AM – 12:00 PM SESSION 6: GaN
MATERIALS Arizona Ballroom I-IV 10:20 AM – 12:00 PM SESSION 7: GaN DRY
ETCH Arizona Ballroom V-VIII 12:00 PM – 1:30 PM OPEN LUNCH Time at you own leisure 1:30 PM – 3:10 PM SESSION 8: THERMAL
MANAGEMENT FOR HIGH POWER DEVICES
Arizona Ballroom I-IV
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1:30 PM – 3:10 PM SESSION 9: GaN Annealing/Passivation Arizona Ballroom V-VIII
3:10 PM – 3:30 PM BREAK Vaquero Ballroom 3:30 PM – 5:10 PM SESSION 10: TEST/YIELD Arizona Ballroom I-IV 3:30 PM – 5:10 PM SESSION 11:
MANUFACTURING IMPROVEMENTS Arizona Ballroom V-VIII
5:10 PM – 5:50 PM RUMP SESSION
RECEPTION Vaquero Ballroom F1 & F2 5:50 PM – 6:50 PM RUMP SESSIONS A-D Vaquero Ballroom E1 & E2,
G1& G2 7:00 PM – 9:00 PM SEMI STANDARDS
MEETING Dunes B
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THURSDAY, May 21st
7:00 AM – 9:30 AM REGISTRATION Vaquero A&E Booths 7:00 AM – 8:30 AM BREAKFAST Vaquero ABCD 8:00 AM – 9:40 AM SESSION 12: GaAs
PROCESSING Arizona Ballroom I-IV 8:00 AM – 9:40 AM SESSION 13: GaN RF
DEVICES Arizona Ballroom V-VIII 9:40 AM –10:10 AM BREAK South Foyer & Desert
Garden 10:10 AM –12:00 PM SESSION 14: III-V DEVICES Arizona Ballroom I-IV 10:10 AM –12:00 PM SESSION 15: GaN POWER
ELECTRONICS Arizona Ballroom V-VIII
12:00 PM – 1:00 PM LUNCH
Vaquero ABCD 1:00 PM – 1:30 PM 30th Anniversary: A Look
Ahead Vaquero ABCD 1:30 PM – 3:00 PM SESSION 16: GaN
RELIABILITY Arizona Ballroom I-IV 3:00 PM – 4:00 PM SESSION 17: POSTERS South Foyer & Desert
Garden 4:00 PM – 4:30 PM CLOSING RECEPTION South Foyer & Desert
Garden
2015 CS ManTech 7
MESSAGE FROM THE CONFERENCE CHAIR
The 2015 conference will mark the 30th anniversary of
CS MANTECH, the only conference dedicated to the
manufacturing challenges and opportunities in the
Compound Semiconductor industry. From the inaugural
conference in 1986, CS MANTECH has stayed true to its
original intent to be a forum to discuss “manufacturing
science and technology”. GaAs, and III-V’s in general,
were very much the “material of the future” in 1986,
holding out much promise but innumerable technical and
commercial challenges. It was, to quote one author, an
“industry made up of young, small high technology start-
ups”. State of the art wafer throughput was measured in
tens or (shock!) hundreds of 3” diameter wafers per week
and reported yields ranged from 8% to near 65% (!). The
majority of the papers submitted at the first conference
envisaged GaAs primarily as a niche, digital LSI
technology. In 2015, largely in due to the intervening wide
spread adoption of mobile phones, GaAs IC’s are now
essentially a consumer driven, analog market. Most, if not
all, of this year’s attendees will own or hold in their hand
phones that contain GaAs based modules. Behind the
commercial success in the intervening 30 years, lie the
cumulative expertise, foresight and experience of
numerous organizations and individuals that have
facilitated production at efficiencies and cost levels few
would have dared speculate possible in 1986. Could the
original attendees ever have imagined a world so
seamlessly interconnected and reliant on III-V technology
that would require and support the currently installed GaAs
fabrication capacity?
The 2015 CS MANTECH conference encompasses a
diverse technical program covering several material
systems, processing steps, devices and applications.
Recent conferences have witnessed a steady increase in
activity and interest in wide-band gap materials that has
paralleled the early focus on GaAs. This year’s program
continues that trend with a majority of the contributed
presentations focused on GaN or related materials. It is
interesting to speculate whether this technology will follow
a similar long term trajectory to GaAs. Will attendees 10,
20 or even 30 years from now, be discussing how
everyone’s lives were shaped by the innovations the
technology enabled? Will the numbers of wafers and
devices being produced today and the problems being
tackled both technically and commercially, seem almost
trivial in hindsight?
This year’s CS MANTECH will kick-off on Monday
with a series of workshops that will provide a primer on
RF technology. Once again, the ROCS Symposium will be
co-located with CS MANTECH and run in parallel with
the workshops. The technical sessions will kick-off on
Tuesday and continue throughout the week.
8 2015 CS ManTech
In the spirit of the impact compound semiconductors are
making, we are greatly honored to have Dr Hiroshi
Amano, winner of the 2014 Nobel Prize in Physics, as our
keynote speaker. The international recognition of their
fundamental enabling work on solid state lighting is
testament to the advances in the basic the understanding of
III-V materials, the ability to manufacture in volume and
the promise the compound semiconductors hold for even
greater advances in the future.
The technical sessions will continue through the week
and will cover, amongst other topics, materials,
metallization, etching, test, reliability, GaN power and
GaN RF devices. The conference will also include the
traditional supplier exhibits, exhibitor forums, rump
sessions, student forum and SEMI standards meetings.
Networking opportunities will abound and will include
heading off-site for the conference International Reception.
As with previous CS MANTECH’s, the 2015 conference
has relied heavily on many individuals who have
volunteered their time to ensure its success. I would like to
thank all the volunteers on both the organizing committees,
along with their supporting organizations, who have
enabled CS MANTECH to reach and mark its 30th
anniversary.
On behalf of both the Executive and Technical Program
Committees, welcome to the 2015 CS MANTECH in
Scottsdale Arizona!
Paul Cooke
IQE RF LLC
Conference Chair,
2015 CS MANTECH
2015 CS ManTech 9
2015 CONFERENCE SPONSORS
CS MANTECH is an independent not-for-profit
organization whose mission is to promote technical
discussion and scientific education in the compound
semiconductor manufacturing industry. The continued
success of the conference is enabled by donations from
corporate sponsors. The 2015 CS MANTECH
Conference Committee gratefully acknowledges the
support from our sponsors.
Platinum Sponsors:
Northrop Grumman Corporation Plasma-Therm, LLC Skyworks Solutions
Qorvo
MAX IEG
Gold Sponsors:
Accel-RF SPTS Technologies
SawStreet LLC Avago Technologies Virginia Diodes, Inc
Cree, Inc. Brewer Science
Vacuum Engineering & Materials Win Semiconductors
Materion Sumika Electronic Materials Inc.
OEM Group
SCIOCS
Silver Sponsors:
CMK, s.r.o. Freiberger MACOM
EMD Performance Materials Corp.
Itochu Plastics Inc.
Media Sponsors: Semiconductor Today
i-Micronews
Compound Semiconductor Magazine
Microwave Journal
10 2015 CS ManTech
2014 CONFERENCE SPONSORS We would again like to thank our 2014 sponsors!
Platinum Sponsors:
Skyworks Solutions RF Micro Devices
Plasma-Therm, LLC Northrop Grumman ES
Gold Sponsors:
WIN Semiconductor Virginia Diodes, Inc
Sumika Electronic Materials, Inc SPTS Technologies
CMK, s.r.o Materion Corporation
AIXTRON SE Brewer Science
Silver Sponsors:
TriQuint Semiconductor MACOM Freiberger
Cree, Inc.
AXT Hitachi Metals
Avago Technologies
Media Sponsors:
Semiconductor Today i-Micronews
Compound Semiconductor Magazine
Microwave Journal
2015 CS ManTech 11
2015 CONFERENCE HIGHLIGHTS
The 2015 CS MANTECH program begins on Monday,
May 18th with a series of tutorial workshops. This year’s
workshop theme is RF for Device and Fab Engineers:
Basic and Advanced Measurements, Device Modeling,
Power Amplifier Design, and RF Packaging. Please see
the MANTECH WORKSHOP section for details.
Also on Monday, CS MANTECH is pleased to be
hosting the internationally recognized Reliability of
Compound Semiconductor (ROCS) workshop. This
workshop is the premier forum for the presentation of the
latest results and new developments related to compound
semiconductor reliability. The JEDEC Committee JC-14.7
sponsors the ROCS workshop. Please see
http://www.jedec.org/home/gaas for details.
The conference social functions begin Monday evening
at 6:00pm with the Exhibitor Reception. Attendees will
have the opportunity to interact with material suppliers,
tool manufacturers, and service provides. This is a great
chance to touch base with current vendors, view new
offerings, and network with colleagues all while enjoying a
taste of the Southwest.
The CS MANTECH Conference begins Tuesday
morning with opening ceremonies that include the 2014
Best Paper awards, Sponsorship Recognition, and a
conference overview along with a short tutorial on the
Guidebook Application. There will also be a special
recognition of the CS MANTECH founder, He Bong Kim
on the 30th Anniversary of the conference. Following the
opening functions the CS MANTECH committee is
pleased to announce there will be a Keynote Presentation
from the 2014 Noble Prize for Physics winner, Dr. Hiroshi
Amano from Nagoya University. Dr. Amano will give his
unique perspective on light emitting diodes with his talk
"Lighting the Earth with LEDs, -Past, Present and Future
Prospects of GaN-Based Blue LEDs-".
The technical program begins with a Plenary Session
composed of three invited talks. First, Timothy Heidel
from the office of Advanced Research Projects Agency -
Energy (ARPA-E), will discuss power electronics in his
talk “Strategies for Wide Bandgap, Inexpensive Transistors
for Controlling High-Efficiency Systems”. Second, Dr.
Daniel Green from the Defense Advanced Research
Projects Agency (DARPA) will provide an overview of
current Microsystems Technology Office (MTO)
semiconductor research activities in his talk “Compound
Semiconductor Technology for Modern RF Modules:
Status and Future Directions”. Third, Dr. Tatsuya
Hosotani from Murata Manufacturing will describe
wireless power transfer in his talk “Importance of High
Frequency Compound Semiconductor devices for Wireless
Power Transfer using Direct-Current-Resonance System”.
12 2015 CS ManTech
Following the Plenary, attendees are welcome to attend a
sponsored luncheon in the Exhibitor Hall.
After lunch, the technical program resumes with sessions
on Compound Semiconductor Trends and GaN
Manufacturing. These serial sessions are composed of
invited and regular submission talks. The Tuesday
technical program concludes with the Exhibitors’ Forum
and Student Forum. The Exhibitors’ Forum provides an
opportunity for exhibitors to present short
marketing/technical presentations to the conference
attendees. The Student Forum provides an opportunity for
students to explore career options through networking with
members of the CS community from industry, academia,
and government. Tuesday evening, CS MANTECH will
host the International Reception
Wednesday morning begins early with breakfast in the
Exhibitor Hall where attendees can follow up on questions
from the Exhibitors’ Forum or meet with one or two new
vendors before the technical sessions begin at 8:00am.
There is a full program of parallel sessions throughout the
day. Morning sessions focus either on III-V and III-N
materials or metallization and dry etch processing.
Afternoon sessions continue thermal analysis and yield
enhancement or annealing/passivation and manufacturing
improvements. Parallel sessions have been structured so
that attendees can move between talks and sessions. The
morning break, held in the Exhibitor Hall, will be one last
opportunity to talk with vendors before the exhibits close
at 11:00am. Lunch is open to allow attendees to explore
the resort area and maybe take in a little sun. Following
the technical sessions, Wednesday evening is host to the
popular CS MANTECH Rump Sessions. Eat, drink, and
debate! Attendees are encouraged to join any (or all) of
the four parallel highly interactive and lively discussions.
Thursday morning the technical program continues with
parallel sessions. Topics include GaN and III-V RF
Devices along with GaN Power Electronics. CS
MANTECH will be providing lunch where Dr. Milton
Feng from the University of Illinois @ Urbana-Champaign
will discuss the future of compound semiconductors in his
talk “Compound Semiconductor Microelectronics /
Photonics Research for the next 30 years – Personal View
based on past 30 years evolution”. After lunch there will
be one serial session on GaN Reliability followed by the
interactive Poster Session. The poster session is a unique
opportunity to talk one-on-one with the author on topics
including photonic devices, photolithography, noise
characterization, and more. Attendees vote for best poster
for which the winning author will receive a Best Poster
Award.
The conference ends Thursday afternoon with a Closing
Reception and the perennial picture contest. However,
instead of the usual Ugly picture, this year the picture
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contest has a Western Theme. Cactus, cowboys, Clint
Eastwood – anything on a Western theme is allowed! The
pictures can be real or photo-shopped, have something to
do with a fab or not, be beautiful or funny, whatever your
creativity can come up with! Amazon gift cards will be
given to the top two pictures, as determined by voting of
attendees at the Interactive Forum. The closing reception
also features the conference feedback prize drawing.
On behalf of the 2015 Technical Program Committee,
Welcome to Scottsdale!
14 2015 CS ManTech
CS MANTECH WORKSHOP
This year the CS-MANTECH workshop provides a crash
course in “all things RF.” Aimed at practicing engineers in
the III-V device community (but also appropriate for
students or anyone curious about how III-V devices can be
characterized, modeled, packaged, or designed into
systems), this workshop will provide attendees with
exposure to a broad range of key RF concepts and
techniques. With coverage of basic and advanced
measurements of RF devices, device modeling, power
amplifier design, and device and circuit packaging, the
workshop will provide a solid foundation as well as
coverage of emerging techniques and approaches in the RF
application space for III-V devices.
This year’s workshop consists of five segments led by
experts in their respective domains. The first two segments
focus on device characterization. The Fundamentals of RF
Measurements will be taught by Marcel Tutt (Freescale);
topics include a discussion of device properties, figures of
merit, and measurements and analysis techniques.
Measurement techniques that will be discussed include S-
parameters, X-parameters, noise figure, and power. On-
wafer and in-fixture measurements, as well as calibration
and de-embedding will be discussed. The second segment,
Advanced Microwave Measurements for Device
Characterization, will be led by Wooyeol Choi (U. Texas-
Dallas). This talk focuses on more advanced RF device
characterization techniques, with emphasis on nonlinear
properties of devices. The role and limitations of pulsed-
bias s-parameter measurements, load-pull (both
conventional as well as harmonic load pull), and large-
signal network analysis will be discussed, with
explanations of both how these techniques are performed
as well as examples of the information they can provide
about the devices under test.
Following the discussion of RF device characterization,
Jonathan Chisum (formerly MIT Lincoln Laboratory, now
at the Univ. of Notre Dame) will lead the third segment,
focusing on circuit design for power amplifiers. RF power
amplifiers (PA) are of critical importance for wireless
communication systems, radar, electronic warfare, and
more. Because PAs are designed to extract the maximum
power, gain, efficiency, or linearity out of a given active
device, there are fundamental tradeoffs that must be made
and therefore PA non-idealities typically limit overall
system performance. This segment will provide an
overview of PA performance parameters, linear,
overdriven, and switch-mode amplifier classes and
topologies (A, B, AB, C, D, E, F, F-1), design methods,
and PA non-idealities in order to understand these design
tradeoffs and their effect on PA performance. The effect
of harmonic termination on amplifier efficiency and
bandwidth, and the impact of device, interconnect, and
packaging parasitics will be discussed. The segment
2015 CS ManTech 15
culminates with a discussion of advanced topologies and
compensation methods for enhancing PA performance.
The fourth segment of the workshop, Packaging and
Functional Integration, will be jointly led by Elias Reese
and Tarak Railkar (Qorvo). In this segment, the
distinctions between RF/microwave/mm-wave packaging
and other semiconductor packaging will be discussed, and
common RF packaging forms in production today will be
described. In addition, the implications of volume and cost
structure on packaging will be considered, as will the
escalating challenges in RF packaging, including
performance (frequency, power, environmental
considerations), functional integration (performance
improvement, size reduction), and manufacturing cost and
volume. The discussion will also include how the interplay
among semiconductor, packaging technology, and
manufacturing affects the viability and deployment of
electronic systems, and how packaging can impact system
development time and lifecycle cost. Beyond the current
state of the art, the segment will conclude with a look
forward to the packaging needs, trends, and visions for the
future.
The final segment will provide an overview of device
modeling, delivered by David Root (Keysight). Since
modeling work flows differ greatly depending on the
intended user of the models (e.g., circuit designers want
models that simulate quickly and accurately but without
regard to whether or not the models have a physical basis,
while fab and device engineers typically use models to
understand devices and their variation and so require
physically-meaningful models), the various different types
of device models (physically based, empirical, and
behavioral) will be contrasted and their benefits and
limitations discussed. In addition, there is often a reliance
on in-fab device PCMs based on DC and S-parameter
measurements; while these tests are mature, they are often
insufficient to infer the large-signal performance of devices
under the high-power or modulated stimuli typical of
modern systems. The basics of the relationships between
in-fab measurements and model equivalent circuits will be
reviewed, and simple but rigorous principles relating
measurements to nonlinear model characteristics are
reviewed, resulting in a unified description for both FET
and bipolar devices. Finally, trends toward more
sophisticated measurements and simulation models that
could be exploited in fabs will be presented.
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2015 ROCS WORKSHOP
Reliability of Compound Semiconductors
Monday, May 18th, 2015
Hyatt Regency Scottsdale Resort & Spa
Room: Arizona Ballroom VI-VIII
8:30 a.m. – 5:00 p.m.
The 30th annual ROCS Workshop - formerly known as the
GaAs Rel Workshop - will be held in conjunction with the
CS ManTech Conference on Monday May 18th, 2015, at
the Hyatt Regency Scottsdale Resort & Spa in Scottsdale,
AZ. This meeting is sponsored by the JEDEC JC-14.7
Committee on GaAs Reliability and Quality Standards and
the EIA.
The ROCS Workshop brings together researchers,
manufacturers and users of compound semiconductor
materials, devices and circuits. Papers presenting latest
results, including work-in-progress and new developments
in all aspects of compound semiconductor reliability will
be presented. Potential authors are invited to submit an
electronic copy of a one to two page comprehensive
summary, suitable for a 15 minute presentation, to
[email protected]. The deadline for receipt of submissions is
March 2rd, 2015; late papers of significant interest may be
considered up to the date of the Workshop. The Advanced
Program will be published approximately one month prior
to the meeting at http://www.jedec.org/home/gaas/.
Advance registration for the workshop is $100 for
students, $200 for JEDEC members, and $225 for non-
members; on-site registration is $250. Registration
includes a full day of ROCS presentations, two breaks, a
luncheon and a copy of the Proceedings. Late registration
will be available starting at 7:30 a.m. on the morning of the
workshop. For further information or to register on-line
(through May 4th, 2015), visit our web site at
http://www.jedec.org/home/gaas/, or contact: Peter
Ersland, Workshop Chairman, M/A-COM Technology
Solutions, 100 Chelmsford Street, Lowell, MA 01851,
(978) 656-2817, [email protected].
2015 CS ManTech 17
INDUSTRY EXHIBITS
As a tradition, the Exhibit held in conjunction with the
CS MANTECH Conference demonstrates the venue for the
compound semiconductor arena that offers an excellent
opportunity for conference attendees and vendors to
directly interact with each other for both parties to submit
detailed information to commonly resolve open issues on
the spot regarding products and services. The portfolio of
Vendors that are on display include those that manufacture
fully functional equipment for various applications or
related sub-assemblies, both for the development and
production of devices and semiconductor materials. Others
offer necessary starting materials like substrates and gases
or any kind of relevant service activities. Representations
on tools for optical inspection and those for evaluation of
materials and components are established in addition as
well. To complete the unique set-up of the Exhibits, both
highly qualified and respected journals providing latest
news from R&D labs or production companies as well as
market research agencies submitting an overview on
what’s happening in the different markets and technologies
of the semiconductor industry are represented also.
Conference attendees as students, whether experienced
or new to this get-together, as well as technical and
business people are receiving latest updates and detailed
information they are looking for or may become aware of
by chance stopping at a booth attracting their attention.
Communication and exchange between vendors and
conference attendees is strongly enhanced through the
Exhibit Reception Monday evening as well as coffee-
breaks during the Exhibit and conference lunch on
Tuesday, all just taking place in the Exhibition Hall around
the booths which further underlines the value of
participation. In conjunction with the Exhibit, the Exhibitor
Forum on Tuesday after the technical sessions has been a
platform to further support provision of the unique
capabilities of companies and vendors to demonstrate
advantages and performance of their products and services,
very beneficial for conference attendees.
As a novelty, the Forum this year will be open to a larger
group of conference attendees to present at this event as
well. To qualify for presentation at the Exhibitors’ Forum
in its new format the person only needs a Full or One Day
Conference Registration, an Exhibitor, or One Day
EXHIBITS ONLY Pass. There will be no extra charge.
To receive more information and to subscribe for one of
the limited number of short presentations, if not yet done
as part of Exhibitor Registration, please contact Ruediger
Schreiner, Exhibits Chair at [email protected].
18 2015 CS ManTech
2015 EXHIBITORS
Accel-RF Corporation AXT, INC.
Brewer Science Inc.
C&D Semiconductor Services, Inc. California Coating Systems
China Crystals Technologies Co., Ltd
ClassOne Technology CREE Inc.
CS CLEAN SYSTEMS Inc
CS Compound Semiconductors DISCO Hi-Tec America, Inc.
DOWA International Corporation
PAK International EpiWorks, Inc.
Evans Analytical Group
Ferrotec USA Corp. FRT of America
Gel-Pak
II-VI Advanced Materials INNOViON Corporation
Insaco, Inc.
Inspectrology Integrated Micro Materials
Intelligent Epitaxy Technology Inc.
IQE JST MANUFACTURING
KITEC GmbH
KLA-Tencor Lehighton Electronics, Inc.
Logitech Ltd
MEI Wet Processing Systems and Services MicroChem Corp
MicroSense, LLC
Oxford Instruments Pall Corporation
Plasma-Therm, LLC
SAMCO INC. SawStreet LLC
Semiconductor Today
Shin-Etsu MicroSi Silicon Materials Inc
SPTS Technologies
Strasbaugh Sumika Eletronic Materials, Inc.
Veeco PSP
Vacuum Engineering & Materials Virginia Diodes Inc
Visual Photonics Epitaxy Co., Ltd
Wafer World Inc. Yole
2015 CS ManTech 19
Special Thanks to our
2014 EXHIBITORS
Accel-RF Corporation AIXTRON
AXT, INC.
BISTel America Inc Brewer Science
Brolis Semiconductors
C&D Semiconductor Services, Inc. Cascade Microtech
China Crystal Technologies Co., Ltd.
Compound Semiconductor Cree Inc.
CS CLEAN SYSTEMS, Inc.
DOWA International Corporation EDAX Inc.
ePAK International
EpiWorks Inc.
Evans Analytical Group
Evatec
FRT of America Gel-Pak
Hi-Solar Co.,Ltd.
Hitachi Metals Ltd II-VI WBG
Insaco, Inc
Inspectrology LLC Wire Transfer Intelligent Epitaxy Technology Inc.
IQE
Kaufman & Robinson KITEC GmbH
KLA-Tencor
Lehighton Electronics, Inc. MEI
MicroChem Corp
Momentive Performance Materials NANOPLAS
NTT Advanced Technology Corporation
Oxford Instruments Plasma-Therm, LLC
Pozzetta
Proton Onsite RIBER INC Check
SAES Pure Gas
SAFC Hitech SAMCO INC.
Semiconductor Today
Shin-Etsu MisroSi Solid State Equipment LLC
SPTS Technologies Sumika Electronic Materials, Inc.
Vacuum Engineering & Materials
Virginia Diodes Inc. Visual Photonics Epitaxy Co., Ltd
WaferWorld Inc
Yole Developpement
20 2015 CS ManTech
2014 BEST PAPERS AWARDS
On Tuesday morning, CS ManTech will formally
recognize the authors of the best paper and best student
paper from the 2014 conference. Both awards are based on
conference attendee on-line feedback. The Best Paper
Award is named in honor of Dr. He Bong Kim, the founder
of the International Conference on Compound
Semiconductor MANufacturing TECHnology.
The He Bong Kim Award winner for the 2014
Conference is:
GaAs Wafer Breakage Reduction
ShibanTiku, Bruce Darley, Manjeet Singh, Ernesto
Ambrozio and Patrick Santos
Skyworks Solutions Inc.
The responses in 2014 warranted an Honorable Mention
to the Best Paper Award which goes to:
GaN Reliability – Where we are and where we need to
go
G.D. Via, AFRL
The Best Student Paper for the 2014 Conference, for
which the principal student author will receive a special
cash award of $1000, is:
Stability and Temperature Dependence of Dynamic
RON in AlN-Passivated AlGaN/GaN HEMT on Si
Substrate
Zhikai Tang, Sen Huang1, and Kevin J. Chen
Hong Kong University of Science and Technology, 1Institute of Microelectronics, Chinese Academy of
Science.
The committee has also elected to award a Honorable
Mention to the Best Student Paper, where the principal
student author will receive a special cash award of $500:
Surface Recombination and Performance Issues of
Scaling Submicron Emitter on Type-II GaAsSb
Huiming Xu, Eric Iverson, and Milton Feng
University of Illinois at Urbana-Champaign
Congratulations to these award winning teams for their
excellent presentation and technical contribution to our
field.
2015 CS ManTech 21
INTERNATIONAL RECEPTION
Come join us
for our annual
International
Reception on
Tuesday evening
May 19th 2015!
This event is
always one of the
highlights of CS-
MANTECH, and this year will be no exception. The
reception will be held at Monterra at West World, and, as
always, will have classic MANTECH Company and
conversation. This year we have a Western theme,
including Western food (think quesadillas, BBQ chicken,
cowboy beans, s’mores), Western games (make sure you
practice your horseshoes and electronic quick draw!), and
fantastic views of a classic Arizona sunset. We will have
live music from one of Phoenix’s favorite local bands, The
Walkens, and even the opportunity to meet some of
Arizona’s most notorious live reptiles (with the most
dangerous ones “behind bars”). CS MANTECH extends
an invitation to family and friends who accompany you at
the Conference to join us. Guest tickets are $50 each. We
strongly encourage you to purchase guest tickets at the
time of your registration to ensure space at the reception.
SEMI STANDARDS MEETING
The SEMI Standards meeting is scheduled for
Wednesday May 20th, from 7:00 pm to 9:00 pm
(immediately following the Rump Sessions. The SEMI
Compound Semiconductor (GaAs, InP and SiC)
Committee invites CS MANTECH Conference attendees
interested in the development of internationally approved
standards for wafer specifications to attend this meeting.
Topics being addressed are GaAs, InP, and SiC
dimensions/orientations and electrical properties, epitaxial
layer specifications (which properties should be specified,
and how they are to be verified), and non-destructive test
methods.
Based in San Jose, CA, SEMI is an international trade
association serving more than 2,400 companies
participating in the semiconductor and flat panel display
equipment and materials markets. SEMI maintains offices
in Brussels, Moscow, Tokyo, Seoul, Hsinchu, Beijing,
Singapore, Austin, Boston and Washington, DC. For
additional information, please contact: Co-Chair: James
Oliver of Northrop Grumman at 410-765-0117 or
[email protected], Co-Chair: Russ Kremer of Freiberger
Compound Materials at 937-291-2899 or russ@fcm-
us.com, or at SEMI Standards contact Paul Trio at 408-
943-6900 or [email protected].
22 2015 CS ManTech
WESTERN THEME PICTURE CONTEST
To celebrate our
western site for this
year’s conference,
we are sponsoring a
picture contest.
Cactus, cowboys,
Clint Eastwood -
anything on a
Western theme is
allowed! The pictures can be real or photo-shopped, have
something to do with a fab or not, be beautiful or funny,
whatever your creativity can come up with! Amazon gift
cards will be given to the top two pictures, as determined
by voting of attendees at the Poster Session. Help us honor
the American West by submitting a picture to
CONFERENCE CLOSING RECEPTION
The Conference Closing Reception brings the 2015 CS
MANTECH to an end. Immediately following the Poster
Session, the closing reception affords attendees one last
opportunity to exchange business cards, ideas, and
experiences as they reflect on the week. During the
reception voting for Best Poster Presentation and Picture
Contest will be tallied and winners announced.
Returning this year is the Feedback Form Raffle.
Conference feedback on technical content and venue is
valuable to the CS MANTECH committees in structuring
in the conference and technical program year to year. In
addition, conference feedback is used to help select the
Best Paper and Best Student Paper. Each Feedback Form
submitted will be entered into a raffle for a prize. It’s as
simple as that! The drawing will be held during the
closing reception, though the winner need not be present to
win.
2015 CS ManTech 23
2015 EXECUTIVE COMMITTEE
Chairman Emeritus He Bong Kim, GaAstronics
Conference Chair Paul Cooke, IQE RF
Technical Program Chair Dave Via
Publication Chair Thorsten Saeger, Qorvo, Inc.
Local Arrangements Chair Alex Smith, Brewer Science
Exhibits Chair Ruediger Schreiner
Workshop Chair Patrick Fay, University of Notre Dame
Publicity Chair Kelli Rivers1, Vacuum Engineering & Materials Co.
Sponsorship Chair Jansen Uyeda,
Northrop Grumman (AS)
Local Arrangements Vice-Chair Drew Hanser, Veeco Instruments, Inc.
International Liaisons Europe: Joerg Splettstoesser1, United Monolithic Semiconductors
Asia: Chang-Hwang Hua, WIN Semiconductors Corp
Registration Chair Travis Abshere, nLIGHT
Web Chair Michelle Bourke,
Kilbrydon Consulting
University Liaison Shiban Tiku,
Skyworks Solutions, Inc.
International Reception Chair
Karen Moore, Freescale
Information Chair
Andy Souzis,
WBG Materials / A Subsidiary
of II-VI Inc
Budget Chair George Henry, Northrop
Grumman (ES)
Audio Visual Chair Russ Kremer, Freiberger
Compound Materials GmbH
Committee Members Karen Renaldo, Northrop Grumman (ES)
Yohei Otoki, Hitachi Metals Marty Brophy, Avago
Scott Sheppard, CREE, Inc Scott Davis, Sumitomo Electric
Celicia Della-Morrow, Qorvo, Inc. Peter Ersland, M/A-COM Technology Solutions
1 TPC liaison
24 2015 CS ManTech
2015 BOARD OF DIRECTORS
Board of Directors Chair Scott Davis, Sumitomo Electric
Secretary Celicia Della-Morrow, TriQuint Semiconductor
Treasurer Peter Ersland, M/A-COM Technology Solutions
Board Members Mike Barsky, Northrop Grumman (AS)
Marty Brophy, Avago Paul Cooke, IQE RF
Mariam Sadaka, Soitec USA Chris Santana, IQE
Scott Sheppard, CREE, Inc Karen Renaldo, Northrop Grumman (ES)
TECHNICAL PROGRAM COMMITTEE
Jon Abrokwah, Avago Technologies Travis Abshere, nSight
Kamal Alavi, Raytheon
Zaher Bardai, IMN.EPIPHANY, Technology Business Consulting John Blevins, Air Force Research Laboratory
Karlheinz Bock, Fraunhofer Institute
Michelle Bourke, Kilbrydon Consulting Marty Brophy, Avago Technologies
Shawn Burnham, HRL Laboritories
Arnold Chen, Aurrion Suzanne Combe, Qorvo, Inc.
Paul Cooke, IQE RF
Jim Crites, Skyworks Solutions Scott Davis, Sumitomo Electric
Celicia Della-Morrow, Qorvo, Inc.
Stefan Eichler, Freiberger Compound Materials GmbH Andreas Eisenbach, IQE PLC
Peter Ersland, M/A-COM Technology Solutions
Patrick Fay, University of Notre Dame Milton Feng, University of Illinois
Drew Hanser, Veeco Compound Semiconductor, Inc.
Allen Hanson, M/A-COM Technology Solutions Quesnell Hartmann, Epiworks
George Henry, Northrup Grumman ES Haldane Henry, Qorvo, Inc.
Chang-Hwang Hua, WIN Semiconductors Corp.
Ming-Yih Kao, Qorvo, Inc. Hidetoshi Kawasaki, Sony
Toshihide Kikkawa, Transphorm Japan
Gene Kohara, Marubeni America Russell Kremer, Freiberger Compound Materials
Judy Kronwasser, NOVASiC
Martin Kuball, University of Bristol Barbara Landini, Sumika Electronic Materials
Chun-Lim Lau, Booz Allen Hamilton
Tom Low, Agilent Technologies Earl Lum, EJL Wireless Research
Steve Mahon, Cascade Microtech
David Meyer, Naval Research Lab Greg Mills, AXRTECH
Eizo Mitani, Sumitomo Electric Device Innovations, Inc
Bobb Mohondro, S-cubed Karen Moore, Freescale
Corey Nevers, Qorvo, Inc.
Yohei Otoki, Hitachi Metals Karen Renaldo, Northrop Grumman
Kelli Rivers, Vacuum Engineering & Materials Co.
2015 CS ManTech 25
Thomas Roedle, NXP Semiconductors
Mariam Sadaka, Soitec USA
Robert Sadler, GCS
Thorsten Saeger, Qorvo, Inc.
Keith Salzman, Qorvo, Inc. Ruediger Schreiner, Consultant, AIXTRON SE
Shyh-Chiang Shen, Georgia Tech
Scott Sheppard, CREE Alex Smith, Brewer Science, Inc.
Andy Souzis, II-VI, Incorporated
Joerg Splettstoesser, United Monolithic Semiconductor GmbH Kevin Stevens, IQE
Mike Sun, Skyworks Solutions
Shiban Tiku, Skyworks Solutions Naveen Tipirneni, Texas Instruments Inc
Jansen Uyeda, Northrop Grumman
Kevin Vargason, IntelliEPI Dave Via
David Wang, Global Communication Semiconductors
Russ Westerman, Plasma-Therm, LLC Keith Wieber, Qorvo, Inc.
Sharon Woodruff, Northrop Grumman
Chris Youtsey, Microlink Devices Guoliang Zhou, Skyworks
Heribert Zull, OSRAM Opto Semiconductors GmbH
26 2015 CS ManTech
TECHNICAL PROGRAM
Monday, May 18th
CS MANTECH WORKSHOPS
Chair: Patrick Fay, University of Notre Dame
7:00 AM Registration
8:00 AM Fundamentals of RF Measurements
Marcel Tutt, Freescale
9:30 AM Advanced Microwave Measurements for
Device Characterization
Wooyeol Choi, University of Texas, Dallas
10:45 AM BREAK
11:00 AM Device Modeling for Fab Engineers
David Root, Keysight
12:30 PM WORKSHOP LUNCH
(CS MANTECH & ROCS)
1:30 PM Power Amplifier Design
Jonathan Chisum, Univ. of Notre Dam
3:00 PM BREAK
3:15 PM Packaging and Functional Integration
Elias Reese and Tarak Railkar, Qorvo, Inc.
4:45 PM WORKSHOP CLOSING
6:00 PM EXHIBITS RECEPTION
ROCS WORKSHOPS
Chair: Peter Ersland, M/A-COM Technology Solutions
7:30 AM - 8:30 AM ROCS Registration
8:30 AM - 5:00 PM ROCS Workshop Sessions
12:30 AM – 1:30 PM WORKSHOP LUNCH
(CS MANTECH & ROCS)
6:00 PM EXHIBITS RECEPTION
2015 CS ManTech 27
Tuesday, May 19th
CONFERENCE OPENING
8:30 AM Opening Ceremonies
Paul Cooke, IQE RF Conference Chair
8:40 AM 2014 Conference Best Paper Awards
Paul Cooke, IQE RF Conference Chair
8:50 AM Technical Program Highlights
Dave Via
Technical Program Chair
KEYNOTE
Chair: Yohei Otoki, Hitachi Metals
9:00 AM Keynote: Lighting the Earth by LED’s,
Past, Present and Future Prospects of
GaN-Based Blue LED’s
Dr. Hiroshi Amano, 2014 Nobel Prize in
Physics
Nagoya University, Japan
SESSION 1: PLENARY
Chair: David Via
9:30 AM Invited Presentation
1.1 Strategies for Wide Bandgap,
Inexpensive Transistors for Controlling
High-Efficiency Systems
Timothy D. Heidel1, David Henshall1, Pawel
Gradzki2
1Advanced Research Projects Agency –
Energy (ARPA-E) U.S. Department of
Energy, 2Booz Allen Hamilton
10:00 AM Invited Presentation
1.2 Compound Semiconductor Technology
for Modern RF Modules: Status and
Future Directions
Daniel S. Green1, Carl L. Dohrman2, Avinash
S. Kane2, Tsu-Hsi Chang3 1DARPA, 2Booz Allen Hamilton, 3HetInTec
Corp
10:30 AM Invited Presentation
1.3 Importance of High Frequency
Compound Semiconductor Devices for
Wireless Power Transfer using Direct-
Current-Resonance System
Tatsuya Hosotani
Murata Manufacturing Co., Ltd
28 2015 CS ManTech
Tuesday, May 19th
11:00 AM EXHIBITS LUNCH
SESSION 2: COMPOUND SEMICONDUCTOR
TRENDS
Chairs: Michelle Bourke, Kilbrydon Consulting
Barb Landini, Sumika Electronic Materials
1:00 PM Invited Presentation
2.1 Mobile RF Front End Integration
James P. Young
Skyworks Solutions, Inc.
1:30 PM Invited Presentation
2.2 Packaging Trends in the Wireless
Industry
Robert Darveaux, Tony LoBianco, Lori
DeOrio, Andrew Kay, Bob Williams
Skyworks Solutions, Inc.
2:00 PM 2.3 Market and Technology Trends in
WBG Materials for Power Electronics
Applications
Dr. Hong LIN
Compound Semiconductor Market and
Technology Analyst, Yole Développement
2:20 PM 2.4 6-inch VCSEL Wafer Foundry
Economics
David Cheskis
ANADIGICS, Inc.
2:50 PM BREAK
2015 CS ManTech 29
Tuesday, May 19th
SESSION 3: GaN MANUFACTURING
Chairs: Dane Henry, Qorvo, Inc.
Toshihide Kikkawa, Transphorm
3:40 PM 3.1 0.15μm GaN MMIC Manufacturing
Technology for 2-50 GHz Power
Applications
Sabyasachi Nayak, Ming-Yih Kao, Hua-Tang
Chen, Trish Smith, Peter Goeller, Weixiang
Gao, Jose Jimenez, Shuoqi Chen, Charles
Campbell, Gergana Drandova, and Robert
Kraft
Qorvo, Inc.
4:00 PM 3.2 RF Performance Improvement of
0.25μm GaN HEMT Foundry Technology
Jhih-Han Du, Che-Kai Lin, Sheng-Wen Peng,
Fu-Chuan Chu, Kai-Sin Cho, Yue-Ting Lin,
Wei-Chou Wang, Walter Wohlmuth
WIN Semiconductors Corp
4:20 PM 3.3 Effects of Underlying Metals on
Textures of Plated Au films on GaN
Kazuhiro Maeda, Koichiro Nishizawa,
Daisuke Suzuki, Toshihiko Shiga and Hitoshi
Watanabe
Mitsubishi Electric Corporation
4:40 PM 3.4 Enhanced Visual Performance in GaN
HEMT Technology
Kai-Sin Cho, Yue-Ting Lin, Wei-Chou
Wang, Jhih-Han Du, I-Te Cho, and Walter
Wohlmuth
WIN Semiconductors Corp.
5:00 PM 3.5 High Power Plastic Packaging with
GaN
Quinn D. Martin
MACOM Technology Solutions
5:30 PM EXHIBITOR AND STUDENT FORUMS
Please refer to the posted placards in the
exhibit area for forum participants and
scheduled presentations.
7:00 PM INTERNATIONAL RECEPTION
Buses depart at 6:30 pm.
30 2015 CS ManTech
Wednesday, May 20th
SESSION 4: MATERIALS
Chairs: Guoliang Zhou, Skyworks
Kevin Stevens, IQE
8:00 PM 4.1 A Mechanism and a Solution to non-
Uniformity of pHEMT Wafers Grown by
MBE Process
Guoliang Zhou, Mark Borek
Skyworks Solutions, Inc.
8:20 PM 4.2 Fast and Highly Accurate in-situ
Calibration of AlGaAs Ternary
Composition for MOVPE-based Growth of
Edge-Emitting Diode Lasers
M. Zorn1, O. Schulz3, A.J. Spring Thorpe2,
J.-T. Zettler3 1JENOPTIK Diode Lab GmbH, 2NRC of
Canada, 3LayTec AG
8:40 PM 4.3 Orderly Array of in-plane GaAs
Nanowires on Exact (001) Silicon for
Antiphase-Domain-free GaAs Thin Films
Qiang Li, Kar Wei Ng, Kei May Lau
Hong Kong University of Science and
Technology
9:00 PM 4.4 Fabrication of III-V virtual Substrate
on 200 mm Silicon for III-V and Si Devices
Integration David Kohen1, Riko I Made1, Shuyu Bao1,2,
Kwang Hong Lee1, Kenneth Eng Kian Lee1,
Chuan Seng Tan 2, Soon Fatt Yoon 1,2,
Eugene A. Fitzgerald 1,3 1Singapore-MIT Alliance for Research and
Technology Center, 2Nanyang Technological
University, 3Massachusetts Institute of
Technology
9:20 PM 4.5 Improvements in Processing - Carrier
and Material Impacts
Molly Hladik1, Aric Shorey2 1Brewer Science, Inc, 2Corning, Inc
9:40 PM BREAK
2015 CS ManTech 31
Wednesday, May 20th
SESSION 5: METALLIZATION
Chairs: Heribert Zull, Osram Opto Semiconductors
Shiban Tiku, Skyworks Solutions
8:00 AM 5.1 Dynamics of Surface Treatments and
Pre-Cleans for High Volume Wafer
Manufacturing
J. Crites1, W. Snodgrass2, L. Luu3 and
Collaborators 1Skyworks Solutions Inc., 2Avago
Technologies, 3Global Communication
Semiconductors LLC
8:20 AM 5.2 A Simulation of Wafer Temperature-
Time Profile in PVD Process Using an
Exponential Model and Its Applications
Xiaokang Huang1, Romek Bobkowski1,
Duofeng Yue1, Craig Hall1, Charles Dark1,
Arthur McGeown2, Chris Jones2, Paulo
Lima2, Paul Rich2 1Qorvo, Inc., 2SPTS Technologies Ltd.
8:40 AM 5.3 Stress Reduction in Metallization using
in-situ Stress Measurement and Plasma
Assisted Evaporation Silvia Schwyn Thöny, Jürgen Buchholz,
Reinhard Benz
Evatec AG.
9:00 AM 5.4 Wafer-to-Wafer Metal Sputter
Deposition Process Control by Automatic
Deposition Rate Adjustment
Chang’e Weng1, Jinhong Yang1, Ron
Herring1, Brian Zevenbergen1, Joel
Anderson2, Chris Jones2, Liam Cunnane2 1Qorvo, Inc., 2SPTS Technologies Ltd.
9:20 AM 5.5 Understanding Process Capability for
Cu Bump Electroplating
Dave Walker, Brian Zevenbergen
Qorvo, Inc.
9:40 PM BREAK
32 2015 CS ManTech
Wednesday, May 20th
SESSION 6: GaN MATERIALS
Chairs: John Blevins, Air Force Research Laboratory
Judy Kronwasser, NOVASiC
10:20 AM 6.1 The Growth of Low Wafer Bow
AlGaN/GaN Structure on 200mm Si(111) Chieh-Chih Huang1, Frank Ried2, Tomas
Palacios3, Soo Jin Chua4, Eugene A
Fitzgerald5 1Singapore-MIT Alliance for Research and
Technology Center, 2AIXTRON SE, 3Department of Electrical Engineering and
Computer Science-MIT, 4National University
of Singapore, 5Department of Materials
Science and Engineering-MIT.
10:40 AM 6.2 GaN MOCVD on Si via Single Crystal
Rare-Earth Oxide Buffer Layer
Rytis Dargis, Erdem Arkun, Radek Roucka,
Andrew Clark
Translucent Inc.
11:00 AM 6.3 Characterization of Strained
AlGaN/GaN HEMTs on CMP-thinned Si
Substrates Marko J. Tadjer1, Travis J. Anderson2,
Andrew D. Koehler2, Jordan D. Greenlee3,
Karl D. Hobart2, Fritz J. Kub2 1American Society for Engineering
Education, 2United States Naval Research
Laboratory, 3National Research Council
11:20 AM 6.4 Effect of Capping Structure on High
Temperature Annealing of GaN
Jordan D. Greenlee1, Boris N. Feigelson2,
Jennifer K. Hite2, Karl D. Hobart2, Fritz J.
Kub2, Travis J. Anderson2 1National Research Council, 2Naval Research
Laboratory
11:40 AM 6.5 Withdrawn
12:00 PM OPEN LUNCH
Time at your own leisure
2015 CS ManTech 33
Wednesday, May 20th
SESSION 7: GaN DRY ETCH Chairs: Jansen Uyeda, Northrop Grumman (AS)
Russ Westerman, Plasma-Therm, LLC
10:20 AM 7.1 Optimizing the SiC Plasma Etching
Process for Manufacturing Power Devices
Haruna Oda, Peter Wood, HIromichi Ogiya,
Seita Miyoshi, Osamu Tsuji
SAMCO Inc.
10:40 AM 7.2 Electrical Properties of GaN Etched by
Low Bias Power Process
Yuichi Minoura, Naoya Okamoto, Toshihiro
Ohki, Shiro Ozaki, Kozo Makiyama, Keiji
Watanabe
Fujitsu Laboratories Ltd.
11:00 AM 7.3 SiC / GaN Via Process – in Search for
Perfection
Ju-Ai Ruan, Craig Hall, Harold Isom, Tom
Nagle
Qorvo, Inc.
11:20 AM 7.4 Qualification of Backside Via Etch
Process in GaN-on-SiC HEMT Devices
Frank Fan, Minkar Chen, Daniel Hou, David
Wang
Global Communication Semiconductors, LLC
11:40 AM 7.5 Analysis and Optimization of a
Through Substrate Via Etch Process for
Silicon Carbide Substrates
Andreas Thies1, Wilfred John1, Stephan
Freyer1, Jaime Beltran2, Olaf Krüger1 1Ferdinand-Braun-Institut, 2LayTec AG.
12:00 PM OPEN LUNCH
Time at your own leisure
34 2015 CS ManTech
Wednesday, May 20th
SESSION 8: THERMAL MANAGEMENT FOR
HIGH POWER DEVICES Chairs: Tom Low, Keysight Technologies
Chang-Hwang Hua, WIN Semiconductors
Corp.
1:30 PM Student Presentation
8.1 Measuring the Thermal Conductivity
of the GaN Buffer Layer in AlGaN/GaN
HEMTs: Effect of Carbon and Iron
Doping
M.Power1, J.W. Pomeroy1, Y.Otoki2,
T.Tanaka2, J.Wada2, M. Kuzuhara3, W.Jantz4,
A.Souzis5, M.Kuball1 1University of Bristol, 2Hitachi Metals, 3University of Fukui, 4SemiMap Scientific
Instruments, 5II-VI Wide Bandgap Group
1:50 PM 8.2 Rapid Characterization of GaN-on-
Diamond Interfacial Thermal Resistance
Using Contactless Transient
Thermoreflectance
Huarui Sun1, James W. Pomeroy1, Roland B.
Simon1, Daniel Francis2, Firooz Faili2, Daniel
J. Twitchen2, Martin Kuball1 1University of Bristol, 2Element Six
Technologies
2:10 PM 8.3 Comparison of Thermal Properties of
Packaged AlGaN/GaN HFETs on Si and n-
SiC Substrates R. Zhytnytska1, J. Böcker2, H. Just2, E.
Bahat-Treidel1, O. Hilt1, S. Dieckerhoff2, J.
Würfl1, G. Tränkle1 1Ferdinand-Braun-Institut, 2Technische
Universität Berlin
2:30 AM Student Presentation
8.4 Improved Thermal Stabilities in
Normally-off GaN MIS-HEMTs
Cheng Liu, Hanxing Wang, Shu Yang,
Yunyou Lu, Shenghou Liu, Zhikai Tang,
Qimeng Jiang, Kevin J. Chen
The Hong Kong University of Science and
Technology
2:50 AM 8.5 Simulation of the Impact of Through-
Substrate Vias on the Thermal Resistance
of Compound Semiconductor Devices Rajesh Baskaran, Allen W. Hanson
MACOM Technology Solutions Inc.
3:10 PM BREAK
2015 CS ManTech 35
Wednesday, May 20th
SESSION 9: GaN ANNEALING/PASSIVATION Chairs: Scott Sheppard, CREE, Inc.
Paul Pinsukanjana, IntelliEPI
1:30 PM 9.1 Atomic Layer Deposition for GaN
Power Semiconductors
H.C.M. Knoops, Y. Huang, B. Mackenzie, T.
R. Sharp, C. J. Hodson, M. Bourke
Oxford Instruments Plasma Technology
1:50 PM 9.2 Comparative Study of AlGaN/GaN
HEMTs with LPCVD- and PECVD-SiNx
Passivation
Xinhua Wang, Sen Huang, Jinhan Zhang,
Yingkui Zheng, Ke Wei, Xiaojuan Chen,
Guoguo Liu, Tingting Yuan, Weijun Luo, Lei
Pang, Haojie Jiang, Hushan Cui, Junfeng Li,
Chao Zhao, Xinyu Liu
Chinese Academy of Sciences
2:10 PM Student Presentation
9.3 A Low-Annealing-Temperature
Process Using Si-Incorporated Contact
Stacks for n-Type III-Nitride
Semiconductors
Yi-Che Lee, A F M Saniul Haq, Shyh-Chiang
Shen
Georgia Institute of Technology
2:30 PM Student Presentation
9.4 Impact of Post Fabrication Annealing
PEALD ZrO2 for GaN MOSFETs
K. Bothe, A. Ma, A. Afshar, P. Motamedi, K.
Cadien, D. Barlage
University of Alberta
2:50 PM 9.5 Suppressed Current Collapse in High
Pressure Water Vapor Annealed
AlGaN/GaN HEMTs
Yohei Kobayashi1, Joel T. Asubar1, Koji
Yoshitsugu2, Hirokuni Tokuda1, Masahiro
Horita2, Yukiharu Uraoka2, Masaaki
Kuzuhara1 1University of Fukui, 2Nara Institute of
Science and Technology
3:10 PM BREAK
36 2015 CS ManTech
Wednesday, May 20th
SESSION 10: TEST/YIELD Chairs: Gene Kohara, Marubeni America
Corporation
Robert Sadler, Global Communication
Semiconductors, LLC
3:30 PM 10.1 Improving Return on Invested
Capital (ROIC) in PHEMT Technology
Peng (Tom) Cheng, Patrick Carroll, Tom
Rogers
Qorvo, Inc.
3:50 PM 10.2 Optimization Methodology of Clean
Pads Selection for Lifetime and Test Yield
on RF bump Wafer Test with Membrane
Probe Card
I-Pin Chia, Min-Chang Tu, Paul Yeh
WIN Semiconductor
4:10 PM 10.3 Threshold Voltage Extraction Method
for 2D Devices with Power-Law µ(nS)
Dependence
Vincent Mosser, David Seron, Youcef
Haddab
Itron France
4:30 PM 10.4 Process Optimization to Improve
Known-Good-Die (KGD) Test Accuracy
and Wafer Final Yield Yu Wang, Patrick Carroll, Jing Yao, Zach
Reitmeier, Tom O’Brien, Doug Melville
Qorvo, Inc.
4:50 PM 10.5 Using GaAs Diesort Methods for
Efficient High Volume Capacitor Testing Martin J. Brophy, John Stanback, Thomas
Dungan
Avago Technologies
5:10 PM RUMP SESSION RECEPTION
2015 CS ManTech 37
Wednesday, May 20th
SESSION 11: MANUFACTURING IMPROVMENTS Chairs: Corey Nevers, Qorvo, Inc.
David Wang, Global Communication
Semiconductors
3:30 PM 11.1 Seam Defects Caused by Clear Field
Mask Chrome Dimensions
Richard Nutter
HRL Laboratories, LLC
3:50 PM 11.2 Effect of Tape Liftoff Tool Settings
and Plasma Conditions on Metal Peeling
from Polyimide Surfaces Jiang Wang, David Lipka, Sam Mony, Nercy
Ebrahimi
Skyworks Solution Inc.
4:10 PM 11.3 Effective in-line Monitoring
Structures for Critical Dimension
Measurement in Photolithography
Chao Wang, Lisa Huynh, Kevin Zoglo
Qorvo, Inc.
4:30 PM 11.4 InAlN/GaN HEMTs With Over 100-
GHz Ft Using an Improved Y-Gate
Process by an i-line Stepper
Hiroyuki Ichikawa, Isao Makabe, Tsuyoshi
Kouchi, Ken Nakata, Kazutaka Inoue
Sumitomo Electric Industries, Ltd.
4:50 PM 11.5 Rapid Production Readiness Through
Process Margin Study: How to Isolate the
Epi and Fab Parameters That Really
Matter
S. Hurtt, D. Schwartz, J. Yang, S.
Nedeljkovic, T. Henderson, F. Pool
Qorvo, Inc.
5:10 PM RUMP SESSION RECEPTION
38 2015 CS ManTech
Wednesday, May 20th
5:50 PM RUMP SESSIONS
Chair: Steve Mahon
SESSION A: GaN-on-Si vs. GaN-on-SiC: THE RACE
TO COMMERCIAL MAINSTAY
Moderator: Allen Hanson
M/A-COM Technology Solutions, Inc.
As the benefits of GaN for RF and microwave
applications become increasingly more understood, the
promise of mainstream commercial adoption is also
becoming more apparent every day. With as much as 50%
of GaN revenue presently attributable to government
funding, it’s clear that a different supply chain will be
required to attain mass-market adoption and to move
beyond the performance at any cost mindset. Two schools
of thought have emerged - one favoring GaN-on-Si with
the claim that it will benefit from silicon industry cost
structures that will ultimately result in a significant cost
benefit over the competition. The other advocates the
current mainstream technology - GaN-on-SiC – and site
it’s inherent performance advantages, every decreasing
substrate costs, and a challenge common to both
approaches - the cost of the package - as reasons their
approach will prevail. What say you?
SESSION B: MBE vs MOCVD – ONCE MORE INTO
THE BREACH
Moderator: Andy Souzis
II-VI Technologies
This rump topic was written 20 years ago and now it
returns. With the rise InGaP HBTs in the late 1990s and
early 2000s the obituary of MBE appeared fully written.
However, technology mimics life in that twists are always
around the corner. With integrated optics and the rise of
GaN technologies the MBE approach to applying that ever-
so crucial layer is regaining prominence. Does deposition
speed of MOCVD trump abrupt layer transitions of MBE?
Who owns the scalability race? Is there a winner over the
horizon or will we have this same Rump Session at the
60th anniversary of CS ManTech? Is a winner required?
Bring on your best!
2015 CS ManTech 39
SESSION C: THE KILLER ELEMENTS OF THE
PERIODIC TABLE - WHAT DO YOU
WANT TO KEEP OUT?
Moderator: Michelle Bourke, Kilbrydon Consulting
As compound semiconductors get more diverse with
integrated optics, very high speed transistors, copper
damascene interconnect and other new innovations, the
smorgasbord of chemistries gets very unwieldy. Most of
the issues are in the critical epitaxial layer that defines the
critical electronics and optics. Are there fundamental
“keep out” elements that should be banned from the stage
to avoid contamination issues? What priorities of
functionality take precedent over others- who is first in
line? Is there a need for a roadmap (ala IRTS) to create
some consistency among technologies. Is this time for the
compound semiconductor standard? Say it ain’t so!
SESSION D: GAN FAB VS SILICON FAB - WHAT IS
THE PLAYING FIELD?
Moderator: Greg Mills, AXRETECH
GaN is the hot rising star of the compound community.
Potential scaled use of Si substrate technology looks closer
to reality for GaN compared to the several crashed
attempts with GaAs on Si. This presents the question of
whether a purposed built fab for GaN is needed or can a
shared/repurposed 200mm CMOS fab be the most
effective answer to this promising technology. The Si
industry has reported that, in near term a significant
number of excess of 200m CMOS fabs will become
unprofitable for conventional CMOS and will be available
for other processes. These fabs are courted to be retooled
for MEMS, Filters or Advanced Power Devices. Can GaN
get in line? Does the ramp of GaN devices support the
scale of a 200mm CMOS fab with their very large
capacities or does history repeat itself with the creation of
modest sized III-V fabs as GaN ramps. Who wins here?
Does anyone lose?
7:00 PM SEMI STANDARDS MEETING
40 2015 CS ManTech
Thursday, May 21st
SESSION 12: GaAs PROCESSING Chairs: Jim Crites, Skyworks Solutions
Keith Wieber, Qorvo, Inc.
8:00 AM 12.1 High Aspect Ratio Individual Source
Through Wafer Vias for High Frequency
GaAs pHEMT Processes
H.Stieglauer1, E.Dengler1, M.Hosch1,
P.Michel2, C.Teysandier2, H.Blanck1 1United Monolithic Semiconductors
Germany, 2United Monolithic
Semiconductors France
8:20 AM Student Presentation
12.2 A CMOS-compatible Fabrication
Process for Scaled Self-Aligned InGaAs
MOSFETs
Jianqiang Lin, Dimitri A. Antoniadis, and
Jesús A. del Alamo
MIT
8:40 AM 12.3 Effect of Pt Thickness on the Gate
Sinking in a pHEMT Device
Debdas Pal, Julia Okvath
MACOM
9:00 AM 12.4 An Integration of On-Chip High-Q
Inductors by Cu Redistribution Layer
(RDL) with Bumping for InGaP/GaAs
HBT MMIC Jung-Hao Hsu, Shu-Hsiao Tsai, Shih-Wei
Chen, Kay Wu, Cheng-Kuo Lin, and Dennis
Williams, Yu-Chi Wang
WIN Semiconductors Corp.
9:20 AM 12.5 Highly Linear Ka-Band 0.15µm GaAs
Power pHEMT Process for Use in Low-
Cost Molded QFN Plastic Package
Michael Hosch1, Hermann Stieglauer1,
Charles Teyssandier2, Philippe Auxemery2,
Mikael Richard2, Jan Grünenpütt1, Benoît
Lambert2, Didier Floriot2 and Hervé Blanck1 1United Monolithic Semiconductors
Germany, 2United Monolithic
Semiconductors France
9:40 AM BREAK
2015 CS ManTech 41
Thursday, May 21st
SESSION 13: GAN RF DEVICES Chairs: Martin Kuball, University of Bristol
David Meyer, Naval Research Lab
8:00 AM 13.1 Leakage Current and Two-Tone-
Linearity Investigations on 0.5µm
AlGaN/GaN HEMTs
Bernd Schauwecker, Michael Hosch, Hervé
Blanck
United Monolithic Semiconductors
8:20 AM 13.2 AlInN/GaN HEMTs on SiC and on
Silicon with Regrown Ohmic Contacts by
Selective Ammonia MBE
Stefano Tirelli1, Diego Marti1, Lorenzo
Lugani2, Marco Malinverni2, J.-F. Carlin2, E.
Giraud2, Nicolas Grandjean2, and C. R.
Bolognesi1 1Millimeter-Wave Electronics Group, ETH-
Zürich, 2ICMP, École Polytechnique
Fédérale de Lausanne (EPFL)
8:40 AM 13.3 Correlation between Luminescence
and Current Collapse in AlGaN/GaN
HEMTs
S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda,
and M. Kuzuhara
University of Fukui.
9:00 AM 13.4 Current Dispersion in Short Channel
Al0.32Ga0.68N/GaN HEMTs
K. Y. Osipov, S. A. Chevtchenko, O.
Bengtsson, P. Kurpas, F. Brunner, N. Kemf,
J. Würfl and G. Tränkle
Ferdinand-Braun-Institut
9:20 AM 13.5 Practical Challenges of Processing III-
Nitride/Graphene/SiC Devices
Andrew D. Koehler1, Neeraj Nepal2, Marko J.
Tadjer3, Rachael L. Myers-Ward1, Virginia
D. Wheeler1, Travis J. Anderson1, Michael A.
Mastro1, Jordan D. Greenlee4, Jennifer K.
Hite1, Karl D. Hobart1, Francis J. Kub1 1Naval Research Laboratory, 2Sotera Defense
Solutions, 3ASEE Postdoctoral Fellow
Residing at NRL, 4NRC Postdoctoral Fellow
Residing at NRL
9:40 AM BREAK
42 2015 CS ManTech
Thursday, May 21st
SESSION 14: III-V DEVICES Chairs: Hidetoshi Kawasaki, Sony
Shyh-Chiang Shen, Georgia Tech
10:10 AM Invited Presentation
14.1 Field Plate Models Applied to
Manufacturability and RF Frequency
Analysis
Robert Coffie
RLC Solutions
10:40 AM 14.2 ESD Protection Device for HEMT
MMICs
Jung-Tao Chung, Shinichiro Takatani,
Cheng-Kuo Lin, Hsi-Tsung Lin, Shao-Chang
Cheng, Shu-Hsiao Tsai, Cheng-Guan Yuan,
Joseph S.M. Liu, Yu-Chi Wang
WIN Semiconductors Corp.
11:00 AM 14.3 pHEMT Device Characterization for
Current Transient Time Constant and
Link to Error Vector Magnitude
S. Nedeljkovic, S. Hurtt
Qorvo, Inc.
11:20 AM Student Presentation
14.4 Development of an InP/GaAsSb
DHBT MMIC Process with a Teflon AF
Interlevel Dielectric
Ralf Flückiger, Rickard Lövblom, Maria
Alexandrova, Hansruedi Benedickter, Olivier
Ostinelli, C. R. Bolognesi
Millimeter-Wave Electronics Group, ETH-
Zürich
11:40 AM Student Presentation
14.5 Characterization of Heterojunction
Bipolar Phototransistor with Integrated
Two-Section Light-Emitting Transistors
Cheng-Han Wu1, Yuan-Fu Hsu2, Gong-Sheng
Cheng2, Chao-Hsin Wu1,2 1Graduate Institute of Electronics
Engineering, 2Graduate Institute of Photonics
and Optoelectronics, National Taiwan
University
12:00 PM LUNCH
2015 CS ManTech 43
Thursday, May 21st
SESSION 15: GaN POWER ELECTRONICS
Chairs: Drew Hanser, Veeco Instruments, Inc.
Chris Youtsey, MicroLink Devices
10:10 AM Invited Presentation
15.1 Vertical Power Semiconductor
Devices Based on Bulk GaN Substrates
I.C. Kizilyalli, X. Xin, T. Prunty, M. Raj, O.
Aktas
Avogy Inc.
10:40 AM 15.2 Above 2000 V Breakdown Voltage on
2 µm-thick Buffer Ultrathin Barrier
AlN/GaN-on-Silicon Transistors
N. Herbecq, I. Roch-Jeune, A. Linge, M.
Zegaoui, F. Medjdoub
Institute of Electronics, Microelectronics and
Nanotechnology
11:00 AM 15.3 EC-2.0eV Trap-Related Dynamic
RON in GaN/Si MISHEMTs
W.Sun, A. Sasikumar, A. Arehart, S. Ringel
Ohio State University
11:20 AM 15.4 Stress and Characterization Strategies
to Assess Oxide Breakdown in High-
Voltage GaN Field-Effect Transistors
S. Warnock, J. A. del Alamo
Massachusetts Institute of Technology
11:40 AM 15.5 RDSON Stability of GaN High Voltage
Power Devices Post Long-Term Stress: A
New Method to Screen Unstable RDSON
Performers Hyeongnam Kim, H. Kannan, Y. Pan, D.
Veereddy, R. Garg, C. Zhu, J. Sun, Bhargav
Pandya, D. Smith, S. Hardikar, M. Imam, T.
McDonald
International Rectifier Corp.
12:00 PM LUNCH
44 2015 CS ManTech
Thursday, May 21st
LUNCH TALK
1:00 PM Compound Semiconductor
Microelectronics / Photonics Research for
the next 30 years – Personal View based on
past 30 year’s evolution.
Dr. Milton Feng
The University of Illinois, Urbana-
Champaign
SESSION 16: GaN RELIABILITY Chairs: Shawn Burnham, HRL Laboratories
Karen Moore, Freescale
1:30 PM Invited Presentation
16.1 GaN HEMT Lifetesting –
Characterizing Diverse Mechanisms
Bruce M. Paine, Steve R. Polmanter, Vincent
T. Ng, Neil T. Kubota, Carl R. Ignacio
Boeing Network and Space Systems
2:00 PM 16.2 Failure Mechanisms in AlGaN/GaN
HEMTs Irradiated with 2MeV Protons
T.J. Anderson1, A.D. Koehler1, P. Specht2,
B.D. Weaver1, J.D. Greenlee1, M.J. Tadjer1,
J.K. Hite1, M.A. Mastro1, M. Porter3, M.
Wade3, O.C. Dubon2, M. Luysberg4, K.D.
Hobart1, T.R. Weatherford3, F.J. Kub1 1Naval Research Laboratory, 2University of
California, Berkeley, 3Naval Postgraduate
School, 4Ernst-Ruska Research Center
2:20 AM 16.3 Drain - Bulk Leakage Current
Mechanisms and Model for Power GaN
HEMT on Si Substrate
Mirwazul Islam1, Grigory Simin1, Naveen
Tipirneni2, Jungwoo Joh2, Vijay
Krishnamurthy2, Sameer Pendharkar2 1University of South Carolina, 2Texas
Instruments, Dallas, TX
2:40 PM 16.4 Hot-Phonon Effect on the Reliability
of GaN-Based Heterostructure Field-Effect
Transistors
Cemil Kayis1, Hadis Morkoç2 1ASELSAN, Inc., 2Virginia Commonwealth
University
2015 CS ManTech 45
Thursday, May 21st
SESSION 17: POSTER Chairs: Nick Kolarich, Epiworks
Kelli Rivers, Vacuum Engineering &
Materials Co.
3:00 PM Student Presentation
17.1 0.18 mm E/D-mode pHEMT using I-
line Photolithography for Microwave
Application
Min-Li Chou1, Yi-Shun Lin2, Ming-Tai Wu2,
Sheng-Chun Wang2, Hsin-Chi Wang2, Li-
Chung Lee2, Zhi-Peng Lin2, Chih-Yu Tseng2,
Fred CH Lin2, Pang-Shao Chen2, Houng-Chi
Wei2, Chian_Gau1, Shih1, Hsien-Chin Chiu1 1Chang Gung University, 2Wavetek
Microelectronics Corp.
Student Presentation
17.2 6A-Operating Current GaN-Based
Enhancement-Mode High Electron
Mobility Transistors
Chih-Hao Wang, Liang-Yu Su, Finella Lee,
Jian-Jang Huang
National Taiwan University
Student Presentation
17.3 Enhancement of Cut-off Frequency
and Optical Bandwidth in Light-Emitting
Transistors at High Temperature
I-Te Lee, Chao-Hsin Wu
National Taiwan University
17.4 Micromachined p-GaN Gate
Normally-off PowerHEMT with an
Optimized Air-Bridge Matrix Layout
Design
Chih-Wei Yang1, Hsiang-Chun Wang1,
Hsien-Chin Chiu1, Chien-Kai Tung2, Tsung-
Cheng Chang2, Schang-jing Hon2
1Chang Gung University, 2Huga Optotech
Inc.
17.5 Optical Frequency Response of GaN-
based Light-emitting Diodes with
Embedded Photonic Crystals
Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu
Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-
Hsin Wu, JianJang Huang
National Taiwan University
17.6 Si-Ge-Sn based Compound
Semiconductors for Photonic Applications
Radek Roucka, Andrew Clark, Nam Pham
Translucent Inc.
46 2015 CS ManTech
17.7 Withdrawn
17.8 Wide Head T-Shaped Gate Process
for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon, Byoung Gue Min, Jong
Min Lee, Dong Min Kang, Ho Kyun Ahn,
Hae Cheon Kim, Jong Won Lim
Electronics and Telecommunications
Research Institute
Student Presentation
17.9 Effect of Gate Threshold Swings by
ALD-Al2O3/AlGaN Interfacial Traps in
GaN Power HEMT with Multiple
Fluorinated Gate Dielectric Layers
Yun-Hsiang Wang1,4, Yung C. Liang1,
Ganesh S. Samudra1, Bo-Jhang Huang2, Ya-
Chu Liao2, Chih-Fang Huang2, Wei-Hung
Kuo3, Guo-Qiang Lo4
1National University of Singapore, 2National
Tsing Hua University, 3Industrial Technology
Research Institute, 4A*STAR Institute of
Microelectronics
CONFERENCE CLOSING
4:00 PM Closing Reception
2015 CS ManTech 47
GENERAL INFORMATION
2015 International Conference on Compound
Semiconductor Manufacturing Technology
May 18th – 21st, 2015
Hyatt Regency Scottsdale Resort & Spa at Gainey Ranch
7500 E. Doubletree Ranch Road
Scottsdale, Arizona, USA, 85258
REGISTRATION INFORMATION (US$)
For Conference Registration, register online at
www.csmantech.org. Register by April 28th to take
advantage of our early bird rate.
www.csmantech.org
On or before Apr. 28 After Apr. 28 Full Conference Registration $580 $680
Student Conference Registration $125 $125 Government Conference Registration $580 $580
One-Day Conference Registration $300 $300
One-Day Exhibit Registration $100 $100 Workshop Registration $175 $275
Government Workshop Registration $175 $175
Payment of the full, student, or government conference
registration fee includes one copy of the printed
Conference Digest (if desired), one copy of the Conference
Digest on a USB memory stick, and admission to all
sessions and the exhibits. It also includes the International
Reception, Exhibits Reception, Exhibits Luncheon, Rump
Session Reception, Interactive Forum Reception,
breakfasts, and refreshment breaks. Additional copies of
the Conference Digest may be purchased at $140 each.
Additional copies of the Conference Digest on a USB
memory stick may be purchased for $50 each.
The one-day registration includes admission to all
sessions for that day, admission to the Exhibits Hall, buffet
breakfast, break refreshments, and lunch. The Rump
Session Reception or Interactive Forum Reception is
included on Wednesday and Thursday, respectively. It also
includes a printed Conference Digest and a Conference
Digest on a USB memory stick. The one-day registration
does not include admission to the International Reception.
The one-day option can be taken only once during the
conference.
Payment of workshop registration includes one copy of
the Workshop Digest, breakfast, Workshop Luncheon and
break refreshments. Additional copies of the Workshop
Notes may be purchased for $100.
Registrants may pay by credit card. The only acceptable
credit cards are Master Card, VISA, and American
48 2015 CS ManTech
Express. REGISTRATION WITHOUT PAYMENT WILL
NOT BE ACCEPTED. All refund requests must be
received by Peter Ersland at the CS MANTECH office
shown below by April 28th for a full refund less a $25
processing fee. NO REFUNDS AFTER APRIL 28, 2015.
CS MANTECH
14525 SW Millikan Way #26585
Beaverton, Oregon 97005-2343
For Advanced Conference Registration, register online at
our Web Site by April 28th.
www.csmantech.org
HOTEL RESERVATIONS
CS MANTECH has arranged for a discounted nightly
rate at the Hyatt Regency Scottsdale Resort & Spa. The
rate for single or double occupancy is $189 per night.
State and local occupancy taxes (currently 14.92%) will be
added to these rates
The CS MANTECH rate includes free guest room
Internet access. State and local occupancy taxes (currently
14.92%) will be added to these rates. For those wishing to
extend their stay, a limited number of rooms are available
at the group rate before and after the conference on a first
come, first served basis.
Please note that if guaranteed by credit card, one night’s
room and tax will be charged if the reservation is cancelled
after 6pm the day before arrival.
Hotel reservations may be made through either:
The CS MANTECH website www.csmantech.org -
Hotel Reservation Link
Calling the Hyatt Regency Scottsdale Resort & Spa
at: +1-480-444-1234
When calling the Hotel directly, please request the CS
MANTECH group rate. To receive the CS MANTECH
rate, Hotel reservations must be received BEFORE
April 16th, 2015. Reservations made after this date will be
subject availability and to the prevailing rates at the Hyatt
Resort.
If you require the US Government rate (ID required)
please call the Hyatt Regency Scottsdale Resort & Spa
directly and notify them you are attending CS MANTECH.
The discounted rate is subject to availability, so please
MAKE YOUR RESERVATION EARLY!
2015 CS ManTech 49
We ask you to please support CS MANTECH and to
enjoy all of the conference activities by staying at our
official 2015 location, the Hyatt Regency Scottsdale
Resort & Spa.
CONFERENCE REGISTRATION &
INFORMATION CENTER
Conference registration is located between the Vaquero
Ballroom (Exhibits) and Arizona Ballroom (Workshop and
Meeting Rooms) in the Vaquero Foyer.
MESSAGE BOARD
A Conference Message Board will be maintained at the
Registration & Information Center during registration
hours. Please advise callers who wish to reach you during
the day to ask the hotel operator to deliver a message to the
CS MANTECH Conference Registration Desk. Please
check the message board periodically.
THE CONFERENCE HOTEL
Escape to the stunning desert vistas of our Scottsdale
luxury resort. Choose our incomparable Scottsdale luxury
hotel for business or leisure and experience services that
define the difference between a hotel and a Hyatt. Enjoy
views of shimmering lakes from the patio or balcony of
your Southwest contemporary guestroom, play 27-holes of
championship golf, or dine alfresco as you gaze at the
majestic McDowell Mountains from our open-air lobby
restaurant and bar. Take advantage of services created to
fill your stay with ease, such as our staffed and 24 hour
self-service Business Center, Hyatt FastBoard™, PDA
Check-in and a 24 hour StayFitTM gym. No matter what
brings you to Hyatt Regency Scottsdale Resort and Spa,
our attentive staff is always ready to assist and ensure your
stay is perfect in every way.
TRANSPORTATION TO THE HOTEL
The Hyatt Regency Scottsdale Resort & Spa can be
reached by car, taxi or shuttle bus from the Phoenix Sky
Harbor Airport:
Transtyle Sedan and SUV Service – offers 24-
hour private chauffer driven services in sedans
that can accommodate up to four passengers and
luggage, and SUV’s that can accommodate up to
six passengers and luggage. Transtyle also offers
Van’s, Stretch Limousines, thirty two passenger
Mini Buses, and full size fifty six passenger
Motor Coaches. Advance reservations required.
50 2015 CS ManTech
Please note: Car seat options not offered. Cost:
$50 Call upon arrival for your car to pick you up,
$70 Meet and Greet Service - have a car waiting
for you upon arrival, SUV Request is an
additional $20, Reservations: Call 800 410 5479
Super Shuttle – offers transportation between the
airport and the hotel 24 hours a day. Upon arrival
at the airport, look for the island marked Van
Service outside of baggage claim. A uniformed
Guest Service Representative will assist you with
your arrangements to the hotel. No advance
reservations are needed from the airport to the
hotel; however, 24 hour advance notice is
requested for return trips from the hotel to the
airport. Cost is $22 per person, each way. Groups
may reserve an entire shuttle for $80. Vans
accommodate a maximum of seven people.
Reservations: Call 800 730 9267
By car - The Hyatt has complementary self-
parking for guests. Directions From Sky Harbor
International Airport (approximately 18 miles):
Exit the airport following the signs to the 202
East. Take the 202 East to the 101 North.
Continue on 101 North to the Via De Ventura
Exit and make a left. Travel West for
approximately 2.5 miles (Via De Ventura turns
into Doubletree Ranch Road). Our Scottsdale AZ
resort will be on the right side just before
Scottsdale Road.
FINANCIAL ASSISTANCE
CS MANTECH encourages presentations and
participation by academic delegates. To support this
participation, limited funding is available to support travel
and conference attendance by student presenters. Requests
will be considered on a first-come, first-served basis.
Please see
http://www.csmantech.org/students/students.html
for details regarding the guidelines and requirements on
applying for financial assistance. Requests or questions
may be sent to the CS MANTECH University Liaison at