2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And...

8/20/2019 2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And Actuation- -20150902

1/62

CMOS-MEMS Technology for Signal

Processing Sensing and Actuation

Sheng-Shian Li

Professor, NEMS & PME, National Tsing Hua University, Taiwan


2/62

N ATIONAL T SING HUA UNIVERSITY

2

Outline

• Enabling Technology: CMOS-MEMS

• CMOS-MEMS Resonators and Fabrication

• Resonator Performance Enhancement

• Implementations

– Resonant/Acoustic Hub

– Motion Hub

– Environment Hub

– Bio Hub• CMOS-MEMS Extension and Future Directions

• Conclusions


3/62


CMOS Fabrication Platforms

3

Mature CMOS processes: 2P4M, 1P6M, etc…

Available CMOS foundries: TSMC, UMC, etc…

0.35µ

m 2P4M CMOS process 0.18µ

m 1P6M CMOS process

Si substrate Si substrate


4/62


Ex: 0.35µm CMOS-MEMS Platform

4

buffer HF

Etching with

silicon substrate

ElectrodeElectrodePassivation

Electrode

BB’ Cross Section View

B

B’

Via-supported Free-Free beam

B

B’

Pure –Al Free-Free beam


5/62


6/62


CMOS-MEMS Advantage

6

Comparison among air and vacuum, direct

measurement and circuit assistance.

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

1.14 1.15 1.16 1.17 1.18 1.19 1.2 1.21

Frequency [MHz]

T r a n s m i s s i o n [ d B ]

Performance

“ Vacuum”

f o= 1.171MHz

VP

= 70V

Q = 2470

Performance

“Air”

f o= 1.174MHz

VP

= 60V

Q = 141

Performance

f o= 1.166MHz

VP

= 75V

Q = 2726

Rm= 375k

MEMS + Amplifier

Stand-alone MEMS

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

1.14 1.15 1.16 1.17 1.18 1.19 1.2 1.21

Frequency [MHz]


Performance

“ Vacuum”

f o= 1.171MHz

VP

= 70V

Q = 2470

Performance

“ Vacuum”

f o= 1.171MHz

VP

= 70V

Q = 2470

Performance

“Air”

f o= 1.174MHz

VP

= 60V

Q = 141

Performance

“Air”

f o= 1.174MHz

VP

= 60V

Q = 141

Performance

f o= 1.166MHz

VP

= 75V

Q = 2726

Rm= 375k

Performance

f o= 1.166MHz

VP

= 75V

Q = 2726

Rm= 375k

MEMS + Amplifier

Stand-alone MEMS

Double-Ended Tuning

Fork (DETF) Resonator


7/62


Integration Scheme for Smart IoX

7

+ CMOS-MEMS enables Wearable and IoT MEMS components for IoX

— MEMS Sensor-SoC (S-SOC)

MCU

+

Interface

Circuit

Power

TX/RX

Signal Processing /

Communication

CMOS CMOS-MEMS

Multi-Sensors

toward System on Chip

N

S

G


8/62


More-Moore & More-than-Moore

• Small, Integration, and Smart

• Add value to the existing CMOS technology

• CMOS-MEMS:

Combining the SiP, SoC

High value system

Analog / RF Passive Sensor /Actuator Biochip

0

. 3 5

m

0 . 1 8

m

0 . 1

3

m

9 0 n m

8

Diversification

Compact

Form Factor

More than Moore

M o r e M o o r e

Interacting with people and environment

Non-digital content

System-in-package (SiP)

Digital content

System-on-chip

(SoC)

Information

Processing

Modif ied from ITRS Roadmap 2005, www.it rs.net


9/62


NTHU Focus: CMOS-MEMS Tech

• CMOS-MEMS as Building Blocks

Resonant / Acoustic Hub Motion Hub

Environment Hub Bio Hub

Motion Hub

N

S G

Environment Hub

P

Resonant / Acoustic Hub

Bio Hub

9


10/62


CMOS-MEMSResonant/Acoustic Hub

10


11/62


Resonant/Acoustic Hub

MEMS

Resonator

CMOS AmplifierDriving

Electrode

Pull-in Frame Coupler

Beam-Array

Resonator

Meander Spring

Sensing

Electrode

Resonant Sensor Bandpass Filter Ref. Oscillator

Single Chip

MEMS

Interface

Sensor - 1

Sensor - N

Sensor - 2…

BPF

BPF

BPF

A/D

A/D

A/D

MCU

Global Timing Module

(Sens. / ADC / MCU / RF PLL) RTC

TX

RX

CMOS-MEMS

Wireless

Sensor SoC

LNA

LNA

LNA

T o R F

s w i t c h & A n t e n

n a


12/62


Resonator Enhancement

QualityFactor

Q

Power

Handling

Po

Motional

ImpedanceRm

Parasitic

Feedthrough

Cparasitic

ThermalStability

TCf

Frequency

Tuning∆f/ f o

CMOS-MEMS Resonators

12


13/62



QualityFactor

Q

Power

Handling

Po

Motional

ImpedanceRm

Parasitic

Feedthrough

Cparasitic

ThermalStability

TCf

Frequency

Tuning∆f/ f o

13


14/62


Scaling with Advanced IC Tech.

14

TSMC 0.35 µm Process

Rm=6.38 MΩ

222

4

AV Q

d mk R

Po

o

mε

=

Motional Impedance:

do

do=0.5µm

TSMC 0.18µ

m Process

Rm=627 kΩ do=0.28µm

TSMC 0.13µ

m Process

Rm=199 kΩdo=0.21µm

TSMC 90 nm Process

Rm

=39kΩdo= 0.14µm


15/62


Comparison of Various Platforms

15

0.18µm platform

Tuning Fork

Performance

f o=4.91MHz

VP=20VQ=100

Rm=1.17MΩ

0.18µm platform

Free-Free Beam

Performance

f o=15MHz

VP=24VQ=857

Rm=4.88MΩ

14.90 15.101.40 1.45 1.50 4.70 4.90 5.10

0.35µm platform

Pinned-Pinned Beam

Performance

f o=1.45MHz

VP=25VQ=179

Rm=7.16MΩ


Frequency [MHz]Li & Li, EDL 2012.


16/62


17/62


17

CMOS-MEMS Resonator Arrays

Single Resonator 5-Resonator Array

9-Resonator Array

Li & Li, T-UFFC 2012.


18/62


Multi-Beam Array Test

• V P

=30V, measured @ 100µTorr

T r a

n s m i s s i o n [ d B ]

Frequency [MHz]

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1

Single Res. f o=10.86MHz

Q=1,919

Rm=2.23MΩ

5-Res. Array f o=10.62MHz

Q=1,220

Rm=600kΩ

9-Res. Array f o=10.50MHz

Q=1,377

Rm=220kΩ

Li & Li, T-UFFC 2012. 18


19/62



19

Power

Handling

Po

Parasitic

Feedthrough

Cparasitic

ThermalStability

TCf

Frequency

Tuning∆f/ f o

QualityFactor

Q

+ AdvancedCMOS

+ Array

Rm


20/62


High-

Nodal Supports

20-105

-95

-85

-75

-65

-55

3.5 4.0 4.5

Performance

do=275nm

f o=4.46MHz

Q=59

RX=524k

Performance

do=217nm

f o=4.08MHz

Q=36

RX=262k

Performance

do=58nm

f o=4.37MHz

Q=39

RX=87k

Measurement

P=-15dBmVP=110V

Frequency [MHz]

T r a n s m i s s i o n [ d B

]

-105

-95

-85

-75

-65

-55

3.5 4.0 4.5

Performance

do=275nm

f o=4.46MHz

Q=59

RX=524k

Performance

do=217nm

f o=4.08MHz

Q=36

RX=262k

Performance

do=58nm

f o=4.37MHz

Q=39

RX=87k

Measurement

P=-15dBmVP=110V

Frequency [MHz]

T r a n s m i s s i o n [ d B

]

Clamped-Clamped Beam Free-Free Beam

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1


Single Res.

f o=10.86MHz

Q=1,919

VP=30V

Rm=2.23M

5-Res. Ar ray

f o=10.62MHz

Q=1,220

VP=30V

Rm=600k

9-Res. Ar ray

f o=10.50MHz

Q=1,377

VP=30V

Rm=220k

Frequency [MHz]

-117

-104

-91

-78

-65

10.35 10.5 10.65 10.8 10.95 11.1


Single Res.

f o=10.86MHz

Q=1,919

VP=30V

Rm=2.23M

5-Res. Ar ray

f o=10.62MHz

Q=1,220

VP=30V

Rm=600k

9-Res. Ar ray

f o=10.50MHz

Q=1,377

VP=30V

Rm=220k

Frequency [MHz]

Q~1500Q~50


21/62


Chen & Li, IFCS’12.

High-

Material and Bulk Mode

135

90

45

0

45

90

47.92 47.94 47.96 47.98 48.00

P h a s e [ d e g r e e ]

T r a n s m i s s i o n

[ d B ]

Frequency [MHz]

Performance

d air=380nm

V P1=70V

V P2=70V

P=-5dBm

f o=47.9MHz

Q=10,696

R m=250kΩ

10.32 10.37 10.42 10.47 10.52

225

180

135

9045

0

45


[ d B ]

Frequency [MHz]

P h a s e [ D e g r e e ]

Performance

d air =530nm

C o=10.6fF

V P , M6=120VV P , Poly =-90V

P=3dBm

f o=10.42MHz

Q=4,805

DETF Flexural Mode Lamé Bulk Mode

Q>10,000Q>4,800

Chen & Li, EDL 2012. 21


22/62


0

2,000

4,000

6,000

8,000

10,000

12,000

14,000

16,000

2010 2011 2012 2013

Progress on Quality Factor

22

Composite

Oxide-RichOxide

Composite Oxide

Q

Year

Oxide


23/62



23

Power

Handling

Po

Parasitic

Feedthrough

Cparasitic

ThermalStability

TCf

Frequency

Tuning∆f/ f o

+ AdvancedCMOS

+ Pull-in

+ Array

Rm

+ Nodal

Support+ Oxide Rich

+ Bulk Mode

Q


24/62


24

Array – Power Handling Enhance

vi RL

v o

i m1 i o

Power

Handling

( )× × × × o, array i o i m o, resonator P = v i = v N i = N Pvi RL

v o

i m1

…… i m2

i mN

i o

O u t p u t

C u r r e n t

Freq.

Fe

O u t p u t

C u r r e n

t

Freq.

Fe

Fe

Fe /N

Fe /N

Fe /N


25/62


25

Enhancement of Power Handling

-105

-100

-95

-90

-85

-80

-75

-70

-65

0.99 0.995 1 1.005 1.01

-105

-100

-95

-90

-85

-80

-75

-70

-65

0.99 0.995 1 1.005 1.01

-105

-100

-95

-90

-85

-80

-75

-70

-65

0.99 0.995 1 1.005 1.01

Normalized Frequency [MHz/MHz]

T r a n s m i s s i o

n [ d B ]

9-Res. Array

Single-Res.ConditionsRm=200k PNA=+5 dBm

Li & Li, T-UFFC 2012.


26/62



26

Parasitic

Feedthrough

Cparasitic

ThermalStability

TCf

Frequency

Tuning∆f/ f o

+ AdvancedCMOS

+ Pull-in

+ Array

Po + Array

+ Bulk Mode

Rm

+ Nodal

Support+ Oxide Rich

+ Bulk Mode

Q


27/62


Passive Temperature Compensation

M3

M2

M1

VIA2

VIA1

Beam

Support

M4

Mere-Metal Resonator Metal-Rich Resonator

• TC E of metal is negative, TC E,Al ~-716 ppm/℃ (Meas.)

• TC E of oxide is positive, TC E ~ +185 ppm/℃ (Ref.)

SiO2 1st-order temperature compensation!

Oxide-Rich Resonator

M4

M2

Oxide: 0% Oxide~39.6% Oxide> 76% 27


28/62


• Adjustment by SiO2 Ratio

Passive Temp. Compensation

28

Mere metal

FF beam

-358 ppm/K

Metal-Rich

FF beam

-59.7 ppm/K

Metal-Rich

FF beam

-97.8 ppm/K

Oxide-Rich

DETF

63 ppm/K

Oxide-Rich

LAME

81 ppm/K

-25000

-20000

-15000

-10000

-5000

0

5000

290 300 310 320 330 340 350

-25000

-20000

-15000

-10000

-5000

0

5000

290 300 310 320 330 340 350

-25000

-20000

-15000

-10000

-5000

0

5000

290 300 310 320 330 340 350-25000

-20000

-15000

-10000

-5000

0

5000

290 300 310 320 330 340 350

Oxide: 38%

-25000

-20000

-15000

-10000

-5000

0

5000

290 300 310 320 330 340 350Oxide: 0%

Oxide: 78.3%

Oxide: 48%

Oxide: 97%

Temperature [K]

f

/ f o [ p p m ]


29/62



29

+ PassiveOxide/Metal

TCf

∆f/ f o

+ ke+ Thermal+ AdvancedCMOS

+ Pull-in

+ Array

Rm

Po + Array

+ Bulk Mode

Cparasitic+ Mech. Diff.

+ Elec. Diff.

+ Nodal

Support+ Oxide Rich

+ Bulk Mode

Q


30/62


Oscillator Implementation

30

Rm Lm Cm

CoutCin

RF

Sustaining Amplifier

CMOS-MEMS Resonator

+1

Rin Rout

-A1 -A2

Oscillation Conditions Loop Gain > 1

Loop Phase = 0


31/62


Fabrication Results (1/2)

IEDM 2013, Washington DC, USA 31


32/62


Fabrication Results (2/2)

IEDM 2013, Washington DC, USA

M1

M2

M3

PolySi-1

VIA

600nm

PolySi-2

M4-Bridge

DETF

Resonator

Thermal-Isolation

Trench

32


33/62


Resonator Characterization

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

10

1.12 1.14 1.16 1.18 1.2 1.22

IEDM 2013, Washington DC, USA

Frequency [MHz]

T r a n s m i s s

i o n [ d B ]

+72 dB

+0.5 dB

-71.5 dB

f o = 1.166 MHz

VP = 75 V

Q = 1985Pdrive = -14dBm

f o = 1.168 MHz

VP = 75 VVC = 1.3V

Q = 2405

Pdrive = -45dBm

Stand-alone

resonator

Resonator + TIA

33


34/62


Oscillator Measurement

IEDM 2013, Washington DC, USA 34

-150

-130

-110

-90

-70

-50

-30

-10

1.1805 1.181 1.1815 1.182 1.1825 1.183

Frequency [MHz]

O u t p u t P o w

e r [ d B m ]

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0 1 2 3 4 5

Time [ S]

A m p l i t u d e [ V ] 960 mVVP = 45V


35/62


-130

-120

-110

-100

-90

-80

-70

-60

-50

0.01 0.1 1 10 100 1000

Phase Noise (f

o

= 1.18 MHz)

Offset Frequency [kHz]

P h

a s e N o i s e [ d B c / H z ]

-112 dBc/Hz @1-kHz

-120 dBc/Hz @ 1-MHz

Measurement (VP=45V)

Model Fitting Curve

Measured by Agilent E4440a

1/f 3

Li & Li, IEDM’13. 35


36/62


Phase Noise Improvement

• Nonlinear manipulation and feedback phase control

36

-130

-120

-110

-100

-90

-80

-70-60

-50

-40

-30

0.01 0.1 1 10 100 1000

VP = 71V VP = 70.6V

Simulation

(Cadence Spectre)

Offset Frequency, f m

[kHz]

P h

a s e N o i s e [ d B

c / H z ]

12fF12fF

366k

52.81H

0.379fF

Li & Li, IEDM’14.


37/62


38/62


Coupler Resonator 1 Resonator 2 1

st

Mode 2nd

Mode

Pull-in Frame

v iRQ io

vo

Coupler

V pull-in 5-Array Filter

RQ

Optional

Tuning

Electrode

Unterminated

Terminated

f


+ Rm Improvement 1. Gap Reduction2. Arraying Design

Filter Implementation

38


39/62


+ Array Filter with Oxide Etching

Driving

Electrode

Pull-in Frame Coupler

Beam-Array

Resonator

Meander Spring

Sensing

Electrode

Fabrication Results

Chen & Li, S&A:A 2014. 39


40/62



[ d B ]

Frequency [MHz]

-120

-100

-80

-60

-40

-20

0

8.6 8.65 8.7 8.75 8.8

Performance f 0 = 8.69 MHz

BW = 36.7 kHz

%BW = 0.42%RQ = 50 Ω

I.L. = 60.6 dB

Performance f 0 = 8.69 MHz

BW = 37.8 kHz

%BW = 0.43%

RQ

= 33 kΩ

I.L. = 12.75 dB

Extracted

Terminated

Filter Termination

40


41/62


Resonant Sensor Implementation

41

Port-1

B i a s -T e e

I D

V D

Port-2B i a s -T e e

I D

V s

I S Port-3

B i a

s -T e e

i m1

i d

i d

I S

Port-4

B i a s -T e e

i m2

V D = 0.5V

V S = 1.0V P o = -15dBm

: =


42/62


Fabrication Results

42

Poly1

Poly2

Oxide

A’

A

50 µm

100 µm

L=60 µm


43/62


A’

A

50 µm

100 µm

L=60 µm

Potential Mass/Aerosol Sensors

43

Frequency

Power f


44/62


45/62


CMOS-MEMS Motion Hub

45

Metal

W-via

SiO2 Polymer

Poly-SiSi

Developed by Prof. Fang’s group

Standard TSMC CMOS process


46/62


Integration: G/M/P Sensors

46

3-axis G sensor3-axis M sensor

P sensor

Monolithic sensors integration

Sensor3-axis

G-sensor

3-axis

M-sensor

P-sensor T-sensor H-sensor

Sensitivity4.94 / 5.39 /2.96

X/Y/Z (mV/G)

0.21 / 0.20 /0.90

X/Y/Z (µV/µT)19.6

µ

V/KPa 0.72*10-3/ºC 0.037%/%RH

Sensing range 0.01~5G 50~1200µT 30~200KPa 30~120ºC 30~90%RH

Non-linearity < 6.5% < 3.27% 9.5% - -


47/62


48/62


CMOS-MEMS Environment Hub

48

MetalW-via

Parylene np-AAO

Poly-Si

RF-aerogel

Si

SiO2

Developed by Prof. Fang’s group

Standard TSMC CMOS process


49/62


Integration: H/P/T Sensors

49

T sensor

P sensor

H sensor

Monolithic sensors integration

Sensor3-axis

G-sensor

3-axis

M-sensor P-sensor T-sensor H-sensor

Sensitivity4.94 / 5.39 /2.96

X/Y/Z (mV/G)

0.21 / 0.20 /0.90

X/Y/Z (µ

V/µ

T)19.6µV/KPa 0.72*10-3/ºC 0.037%/%RH

Sensing range 0.01~5G 50~1200µT 30~200KPa 30~120ºC 30~90%RH

Non-linearity < 6.5% < 3.27% 9.5% - -


50/62


CMOS-MEMS Bio Hub

50


51/62


CMOS ISFET for Dopamine Detection

51

H2SO4/H2O2 etch

Michael S.-C. Lu, NTHU


52/62


fM-Level Dopamine Detection

52

0 0.5 1 1.5 2 2.5 3

1

2

3

4x 10

-4

Vsg (V)

C u r r e n t ( A )

Simulation

MES buffer 1 fM

100 fM

10 pM

0 0.5 1 1.5 2 2.5 3

1

2

3

4x 10

-3

Vsg (V)

C u r r e n t ( A

)

Simulation

MES buffer

1 fM

100 fM

10 pM

W/L = 3

W/L = 30



53/62


fM-Level Cap. Dopamine Sensors

53

dopamine

Produced negativecharges reduce the

sense capacitance


i b


54/62


Dopamine Sensors by CMOS-MEMS

54

SiO2

microelectrodes


C OS i b d i


55/62


CMOS Magnetic-bead Biosensor Array

55Michael S.-C. Lu, NTHU

D i f Si l Mi b d


56/62


Detection of a Single Microbead

560 1000 2000 3000 40000

1

2

3

4

5

Time (sec)

O u t p u t f r e q u e n c y ( M H z )

before manipulation

w/o bead after manipulation

microbead with functionalized

anti-streptavidin antibody

anti-streptavidin antibody

on sensor surface

0 1000 2000 3000 40001

2

3

4

5

Time (sec)

O u t p u t f r e q u e n c y ( M H

z )

before manipulationwith bead after manipulation

Due to ∆C change (5.3 fF

In average)

No ∆C change



57/62

MEMS I d t S t


58/62


MEMS Industry Supports

58

Micro Sensors and ActuatorsTechnologies Consortium (

µ

SAT)

SAT M b


59/62


µSAT Members

59

System Fabless/Fab-light MaterialEquipment Fab Packaging/Testing

SAT P f


60/62


µSAT Professors

60

方維倫

清動機

李昇憲

清奈微

盧向成

清電機

陳榮順

清動機

傅建中

清奈微

王玉麟

清奈微

羅丞曜

清奈微

鄒慶福

逢甲自控

白明憲

清動機

葉廷仁

清動機

邱

交電機

陳政寰

交光電

張嘉展

中正電機

江政達

嘉電機

沈志雄

彰師機械

蔡宗亨

中正電機

A k l d t


61/62


Acknowledgments

• Funding Supports – MOST, NTHU, TSMC, ITE, TXC

• Chip Manufacturing – CIC, TSMC, UMC, NDL

• Prof. Weileun Fang, Prof. Michael S.-C. Lu, and all my

graduate students


62/62


Thanks for your attention!!

Date post:	07-Aug-2018
Category:	Documents
Upload:	denghuei
View:	215 times
Download:	0 times

2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And...

Documents