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2016-04-11 Flyer High-Q Si-Embedded 3D Inductors...Si-Embedded-Spiral-Inductor Solenoidal-Inductor...

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FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY HIGH-Q SI-EMBEDDED 3D INDUCTORS Air coils for power electronics General description A CMOS-compatible Si-embedded integra- ted inductor concept with high-Q factor is available to realize monolithic integration of power converters for portable electro- nics applications. The buried inductor is fully insulated from the Si-substrate by an oxide layer and can be manufactured with electroplated Cu. The Si-embedded spiral design suggests the highest Q-factor and integration density. Features • Fully CMOS-compatible • Monolithic integration along with active electronics or silicon capacitors or as stand-alone bare die Easy design of inductance and Q-factor Core less design suitable for operation above 1MHz (f Res ≥ 300MHz*) Low parasitic capacitance, e.g. as low as 208fF* 1 Diced planar-spiral inductors with air core and Al winding on Si-substrate Fraunhofer Institute for Integrated Systems and Device Technology IISB Schottkystraße 10 91058 Erlangen Germany Contact: PD Dr.-Ing. Tobias Erlbacher Phone: +49 9131 761 319 Fax: +49 9131 761 360 [email protected] www.iisb.fraunhofer.de 1 1 Advantages • Considerably smaller footprint compared to conventional inductors Higher Q-factor (Q > 200*) compared to the planar RF inductors (Q = 7*) • Lower power consumption of integrated circuits (DF = 0.0045*) No polarization losses allow for faster switching under high currents compared to ferrite-based inductors Benefits High-profit due to an innovative product • Increased market volume from expanded product options • Reduced assembly effort by monolithic integration * for a 1µH inductor 1
Transcript
Page 1: 2016-04-11 Flyer High-Q Si-Embedded 3D Inductors...Si-Embedded-Spiral-Inductor Solenoidal-Inductor Toroidal-Inductor Solenoidal Indu Table 1 indicates key geometrical, technological

F R A U N H O F E R I N S T I T U T E F O R I N T E G R AT E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y

HIGH-Q SI-EMBEDDED 3D INDUCTORSAir coils for power electronics

General description

A CMOS-compatible Si-embedded integra-

ted inductor concept with high-Q factor is

available to realize monolithic integration

of power converters for portable electro-

nics applications. The buried inductor is

fully insulated from the Si-substrate by an

oxide layer and can be manufactured with

electroplated Cu. The Si-embedded spiral

design suggests the highest Q-factor and

integration density.

Features

• Fully CMOS-compatible

• Monolithic integration along with active

electronics or silicon capacitors or as

stand-alone bare die

• Easy design of inductance and Q-factor

• Core less design suitable for operation

above 1MHz (fRes ≥ 300MHz*)

• Low parasitic capacitance, e.g. as low as

208fF*

1 D i ce d p lanar- s p i r a l

in du c t or s w i t h a i r co r e an d

A l w in d ing on S i - sub s t r at e

Fraunhofer Institute forIntegrated Systems andDevice Technology IISB

Schottkystraße 10

91058 Erlangen

Germany

Contact: PD Dr.-Ing. Tobias Erlbacher

Phone: +49 9131 761 319

Fax: +49 9131 761 360

[email protected]

www.iisb.fraunhofer.de

11

Advantages

• Considerably smaller footprint compared

to conventional inductors

• Higher Q-factor (Q > 200*) compared to

the planar RF inductors (Q = 7*)

• Lower power consumption of integrated

circuits (DF = 0.0045*)

• No polarization losses allow for faster

switching under high currents compared

to ferrite-based inductors

Benefits

• High-profit due to an innovative product

• Increased market volume from expanded

product options

• Reduced assembly effort by monolithic

integration

* for a 1µH inductor

1

Page 2: 2016-04-11 Flyer High-Q Si-Embedded 3D Inductors...Si-Embedded-Spiral-Inductor Solenoidal-Inductor Toroidal-Inductor Solenoidal Indu Table 1 indicates key geometrical, technological

Tech

nolog

yM

ater

ialCor

e

Area [

mm

2 ]Vo

lume [

mm

3 ]Ind

ucta

nce [

µH]

Induc

tanc

e den

sity [

nH/m

m3 ]

Serie

s res

istan

ce [Ω

]

Para

sitic

capa

citan

ce [f

F]

Reso

nanc

e fre

quen

cy [M

Hz]

Quality

facto

r at 5

MHz

Dissipa

tion

facto

r at 5

MHz

CU Air core

Planar-spiral on Si-surface

1.28 0.64 1.0 1562 0.20 10142 50 157 0.006

Multi-layer inductor

19.2 3.92 1.04 264 4.23 174 375 7.61 0.13

CU Ferrite core

24.2 5.19 1.10 212 0.16 208 333 221 0.005

Si-embedded spiral

CU Air core

1.28 0.64 0.06 8.75 0.20 181 5000 0.88 1.14CU Air core

Fig. 1 displays inductance density in terms of

quality factor for solenoidal-, toroidal- and

spiral-inductors.

Spiral-inductors are given in planar and

Si-embedded models. Number of turns in all

architectures is set to be 24.

2 D et a i l e d image of a h igh - Q p lanar-

s p i r a l in du c t or on a s i l i con sub s t r at e

Performance Characteristics

0 20 40 60 80 100 120 140

Quality factor

50

100

150

200

250

300

Inte

grat

ion

dens

ity (n

H/m

m3 )

Planar-Spiral-Inductor

Si-Embedded-Spiral-Inductor

Solenoidal-Inductor

Toroidal-Inductor

Soolenoidal Indu

Table 1 indicates key geometrical, technological and electrical parameters

of different inductor technologies

2 2


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