2N7002CK 60 V, 0.3 A N-channel Trench MOSFET2N7002CK_1 2 J 0 8;*+ Product data sheet Rev. 01 — 11...

1. Product profile

1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.

1.2 Featuresn Logic-level compatible

n Very fast switching

n Trench MOSFET technology

n ESD protection up to 3 kV

1.3 Applicationsn Relay driver

n High-speed line driver

n Low-side loadswitch

n Switching circuits

1.4 Quick reference data

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 — 11 September 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 60 V

ID drain current - - 300 mA

IDM peak drain current single pulse;tp ≤ 10 µs

- - 1.2 A

RDSon drain-source on-stateresistance

VGS = 10 V;ID = 500 mA

- 1.1 1.6 Ω

Nexperia 2N7002CK60 V, 0.3 A N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3

017aaa000

G

D

S

Table 3. Ordering information

Type number Package

Name Description Version

2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code [1]

2N7002CK LP*

© Nexperia B.V. 2017. All rights reserved2N7002CK_1

Product data sheet Rev. 01 — 11 September 2009 2 of 13


5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting padfor drain 1 cm2.

Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V

VGS gate-source voltage - ±20 V

ID drain current VGS = 10 V

Tamb = 25 °C - 300 mA

Tamb = 100 °C - 190 mA

IDM peak drain current Tamb = 25 °C; tp ≤ 10 µs - 1.2 A

Ptot total power dissipation Tamb = 25 °C [1] - 350 mW

Tj junction temperature 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Source-drain diode

IS source current Tamb = 25 °C - 200 mA

ISM peak source current Tamb = 25 °C; tp ≤ 10 µs - 1.2 A

ElectroStatic Discharge (ESD)

VESD electrostatic dischargevoltage

all pins;human body model;C = 100 pF;R = 1.5 kΩ

- 3 kV

Fig 1. Normalized total power dissipation as afunction of ambient temperature

Fig 2. Normalized continuous drain current as afunction of ambient temperature

Tamb (°C)−75 17512525 75−25

017aaa001

40

80

120

Pder(%)

0

Tamb (°C)−75 17512525 75−25

017aaa002

40

80

120

Ider(%)

0

Pder

Ptot

Ptot 25°C( )------------------------ 100%×= I der

I D

I D 25°C( )-------------------- 100%×=




6. Thermal characteristics

Tsp = 25 °C; IDM = single pulse; VGS = 10 V

Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function ofdrain-source voltage

Tamb = 25 °C; IDM = single pulse; VGS = 10 V

Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function ofdrain-source voltage

017aaa003

VDS (V)10−1 102101

1

10−1

10

ID(A)

10−2

Limit RDSon = VDS/ID

DC

tp = 10 µs

100 ms

100 µs

1 ms

10 ms

017aaa004

10−1

10−2

1

10

ID(A)

10−3

VDS (V)10−1 102101

Limit RDSon = VDS/ID

DC

tp = 10 µs

100 ms

100 µs

1 ms

10 ms

Table 6. Thermal characteristics


Rth(j-a) thermal resistance fromjunction to ambient

in free air [1] - 350 500 K/W




[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Rth(j-sp) thermal resistance fromjunction to solder point

- - 150 K/W

Table 6. Thermal characteristics …continued


Table 7. CharacteristicsTamb = 25 °C unless otherwise specified.


Static characteristics

V(BR)DSS drain-source breakdownvoltage

ID = 10 µA; VGS = 0 V

Tj = 25 °C 60 - - V

Tj = −55 °C 55 - - V

VGS(th) gate-source thresholdvoltage

ID = 250 µA; VDS = VGS;Tj = 25 °C

1 1.75 2.5 V

IDSS drain leakage current VDS = 60 V; VGS = 0 V

Tj = 25 °C - - 100 nA

Tj = 150 °C - - 1 µA

IGSS gate leakage current VGS = ±20 V; VDS = 0 V - - 5 µA

VGS = ±10 V; VDS = 0 V - 50 450 nA

VGS = ±5 V; VDS = 0 V - - 100 nA

RDSon drain-source on-stateresistance

VGS = 4.5 V;ID = 200 mA

Tj = 25 °C - 1.3 3 Ω

Tj = 150 °C - 2.8 4.4 Ω

VGS = 10 V; ID = 500 mA - 1.1 1.6 Ω

Dynamic characteristics

QG(tot) total gate charge ID = 200 mA;VDS = 10 V;VGS = 4.5 V

- 1.09 1.3 nC

QGS gate-source charge - 0.22 - nC

QGD gate-drain charge - 0.23 - nC

Ciss input capacitance VGS = 0 V; VDS = 25 V;f = 1 MHz

- 47.2 55 pF

Coss output capacitance - 11 20 pF

Crss reverse transfercapacitance

- 5 7.5 pF

td(on) turn-on delay time VDS = 15 V;RL = 15 Ω;VGS = 10 V;RG = 6 Ω

- 8 15 ns

tr rise time - 8 15 ns

td(off) turn-off delay time - 38 50 ns

tf fall time - 22 35 ns

Source-drain diode

VSD source-drain voltage IS = 200 mA; VGS = 0 V 0.47 0.79 1.1 V




Tj = 25 °C(1) VGS = 10 V

(2) VGS = 5 V

(3) VGS = 4.5 V

(4) VGS = 4 V

(5) VGS = 3.5 V

Tj = 25 °C; VDS = 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 5. Output characteristics: drain current as afunction of drain-source voltage; typicalvalues

Fig 6. Sub-threshold drain current as a function ofgate-source voltage

Tj = 25 °C(1) VGS = 4 V

(2) VGS = 4.5 V

(3) VGS = 5 V

(4) VGS = 10 V

ID = 500 mA

(1) Tj = 150 °C(2) Tj = 25 °C(3) Tj = −55 °C

Fig 7. Drain-source on-state resistance as a functionof drain current; typical values

Fig 8. Drain-source on-resistance as a function ofgate-source voltage; typical values

VDS (V)0 431 2

017aaa005

0.4

0.6

0.2

0.8

1.0

ID(A)

0.0

(2)(1) (3)

(4)

(5)

017aaa006

VGS (V)0 321

10−4

10−5

10−3

ID(A)

10−6

(2)(1) (3)

ID (A)0.0 1.00.80.4 0.60.2

017aaa007

1.5

1.0

2.0

2.5

RDSon(Ω)

0.5

(4)

(2)

(1)

(3)

VGS (V)0 1084 62

017aaa008

2

1

3

4

RDSon(Ω)

0

(1)

(2)

(3)




ID = 0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

Fig 9. Normalized drain-source on-state resistancefactor as a function of junction temperature

Fig 10. Gate-source threshold voltage as a function ofjunction temperature

VGS = 0 V; f = 1 MHz

(1) Ciss

(2) Coss

(3) Crss

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Tj (°C)−60 1801200 60

017aaa009

1.2

0.6

1.8

2.4

a

0.0

Tj (°C)−60 1801200 60

017aaa010

1

2

3

VGS(th)(V)

0

(2)

(1)

(3)

aRDSon

RDSon 25°C( )------------------------------=

017aaa011

VDS (V)10−1 102101

10

102

C(pF)

1

(2)

(1)

(3)




ID = 200 mA; VDD = 30 V; Tj = 25 °C VGS = 0 V

(1) Tj = 150 °C(2) Tj = 25 °C(3) Tj = −55 °C

Fig 12. Gate-source voltage as a function of gatecharge; typical values

Fig 13. Source current as a function of source-drainvoltage; typical values

017aaa012

QG (nC)0.0 1.20.80.4

4

6

2

8

10

VGS(V)

0

VSD (V)0.2 1.21.00.6 0.80.4

017aaa013

0.4

0.6

0.2

0.8

1.0

IS(A)

0.0

(1) (2) (3)




8. Package outline

Fig 14. Package outline SOT23 (TO-236AB)

UNITA1

max.bp c D E e1 HE Lp Q wv

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

04-11-0406-03-16

IEC JEDEC JEITA

mm 0.1 0.480.38

0.150.09

3.02.8

1.41.2

0.95

e

1.9 2.52.1

0.550.45

0.10.2

DIMENSIONS (mm are the original dimensions)

0.450.15

SOT23 TO-236AB

bp

D

e1

e

A

A1

Lp

Q

detail X

HE

E

w M

v M A

B

AB

0 1 2 mm

scale

A

1.10.9

c

X

1 2

3

Plastic surface-mounted package; 3 leads SOT23




9. Soldering

Fig 15. Reflow soldering footprint SOT23 (TO-236AB)

Fig 16. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5(3×)

0.6(3×)

0.6(3×)

0.7(3×)

3

1

3.3

2.9

1.7

1.9

2

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4(2×)

1.2(2×)

2.2

2.6

Dimensions in mm




10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002CK_1 20090911 Product data sheet - -




11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL http://www.nexperia.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intendedfor quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local Nexperia salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate andreliable.However,Nexperiadoesnotgiveany representationsorwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.

Right to make changes — Nexperia reserves the right tomakechanges to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use ofNexperia products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) may cause permanentdamage to the device. Limiting values are stress ratings only and operation ofthe device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.

Terms and conditions of sale — Nexperia products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nexperia.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by Nexperia. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from national authorities.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

11.4 TrademarksNotice: All referenced brands, product names, service names and trademarksare the property of their respective owners.

12. Contact information

For more information, please visit: http://www .nexperia.com

For sales office addresses, please send an email to: [email protected]

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.




13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description. . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 12 Pinning information . . . . . . . . . . . . . . . . . . . . . . 23 Ordering information . . . . . . . . . . . . . . . . . . . . . 24 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36 Thermal characteristics. . . . . . . . . . . . . . . . . . . 47 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 99 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1010 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1111 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1211.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1211.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1211.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1211.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 1212 Contact information. . . . . . . . . . . . . . . . . . . . . 1213 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 11 September 2009

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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET2N7002CK_1 2 J 0 8;*+ Product data sheet Rev. 01 — 11...

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