4DTrackingDetectors:MonolithicFastTimingSiliconDetectors
JessicaMetcalfe
ArgonneNa*onalLaboratory
1July7,2016 JessicaMetcalfe
EIC Considerations
2July7,2016 JessicaMetcalfe
Luminosity• upto1034• expect~1-2interacGonsperevent• Pileupshouldnotbeanissue,sGllneedtoidenGfyprimaryvertex
• Bunchcrossing~10ns• FastreadoutorGmestamptoidenGfybunchcrossingforanevent
Vertexing• Hadronbeamspotβ=5cmParGcleidenGficaGon• Gmeofflight• dE/dx
RadiaGondamage• Max1x10151MeVneq/cm2
• Assuming~1%ofworstdoseatHL-LHC• Tobeconfirmed
MaterialBudget• Keepaslowaspossible
Fast Timing Silicon Detectors
3July7,2016 JessicaMetcalfe
Proposal:
4DTrackingDetectors:MonolithicFastTimingSiliconDetectors
• Siliconalreadyhassmallpixels(10-50μm)forhighspaGalresoluGon• AddGmingresoluGon• be`erthanbunchcrossing• ForvertexandtrackreconstrucGon• ForparGcleID
• MAPSmayreducecostandradiaGonlength5DDetector:x,y,z,Gme,energy• AddasanopGonforanEMcalorimeter
Currentlyunderinves<ga<onbyItaliangroups(INFN,Trento,Torino,…),London,andUCSantaCruz
Neverdonebefore
Timing for Particle ID
4July7,2016 JessicaMetcalfe
ParGcleID:• Expectedenergyrangeofcharged
parGclesisupto10GeV• UsingtheGmeofflight,pion,kaon,and
protonscanbeidenGfiedduetomassdifferencesforagivenmomentum
• Kaon-pionseparaGonrequiresresoluGonsontheorderof10psat10GeV
K-πTOF10ps@8GeV
Timing for Particle ID
5July7,2016 JessicaMetcalfe
ParGcleID:CombinedwithdE/dxforenhancedparGcleID
Timing for Track Reconstruction
6July7,2016 JessicaMetcalfe
ParGclesfromthestruckparton->Jetsubstructure• IdenGficaGonofsecondary/terGaryverGces• ParGcleidenGficaGon• HighresoluGontracking
• FragmentaGonfuncGon/structurefuncGon
IP
D*+
π+
parGcle cτπ± 7.8mπ0 25nmK± 3.7mK0S 2.7cmK0L 15.3mD± 312μmD0 123μm
Ultra Fast Silicon Detectors
7July7,2016 JessicaMetcalfe
Howdoweachievefast/mingontheorderof10ps?• CurrenttradiGonalsilicontechnologieshaveriseGme~1-10nsdeterminedbythedrio
velocityinanelectricfield1)Fasterspeedsachievedbyreducingthelengthe-hpairstravel->ThinSensors
Currentofoneelectron-holepair
NicoloCarGgliaCERNEPDetectorSeminar9/26/2014
Ultra Fast Silicon Detectors
8July7,2016 JessicaMetcalfe
Howdoweachievefast/mingontheorderof10ps?2)Createanavalancheregiontoachievelargergains
-+
IncomingchargedparGcle
-+-+
+-+
+-+
-
+-
-
dV/dt>300kV/cmCreatelargepotenGalgradientbyapplyingaregionofhighdopingconcentraGonND>1016/cm3
Gainfactor~>10xmorechargeobserved
Low Gain Amplifying Detectors (LGAD)
9July7,2016 JessicaMetcalfe
LGAD• amplificaGonregion,~5μmthick• thinlayerofBoronorGallium• modifiestheeffecGvedopingconcentraGonprofile->electricfieldprofiletocreatehighfieldgradient
• RadiaGontoleranceshownupto1014neq/cm2• notastolerantastradiGonalsiliconduetothehighreacGvityoftheaccelerantlayer
Sadrozinski,CPADMeeGng,Arlington2015
5μm
5μm
Fast Timing Silicon Detectors
10July7,2016 JessicaMetcalfe
SiliconDetectorR&DforEIC:
Timeresolu<on(inideallabcondi<ons)approaching10ps
Sadrozinski,CPADMeeGng,Arlington2015
Fast Timing Silicon Detectors
11July7,2016 JessicaMetcalfe
LimiGngFactors:ShotNoise• Mainfactoristheleakagecurrentinthebulk• MulGplicaGonregionalsoaddstothenoiseduetostochasGcnature• Signalenhancementfromgainincreasesmoreslowly(G)thanthenoiseincrease(√G2+x)
duetothegainfactorlimiGngtheoveralleffecGvenessofincreasingthegainontheS/NraGo->limitsgainfactor,G<20
Non-uniformfieldprofile• Reducestheamountofpeakchargecollected• DistortscollectedsignalbasedonwhereincidentparGclestrikes->Thin,squaregeometryelectrodesandhighresisGvitybulkforuniformelectricfieldprofile->Highfieldformaximaldriovelocity->lowcapacitancetominimizenoise->smallvolumestominimizeleakagecurrentandShotnoiseAnswer:CMOSMonolithicAcGvePixelSensors(MAPS)• ReduceeffecGvecapacitance->noise• Provideon-pixelamplificaGon->toleratelowerchargeamplitude->cangothinner
HVCMOS MAPS
12July7,2016 JessicaMetcalfe
HVCMOSMAPS(highvoltagecomplimentarymetaloxidesemiconductormonolithicacGvepixelsensor)• Lessexpensivebyx2thantradiGonalsiliconsensors• Integratedsensor+signalamplificaGon• UsecommerciallyavailableCMOSprocessingwithafewmodificaGons• Deepn-welltoisolateon-pixelelectronics• highresisGvitysubstratesforhighvoltagewithoutbreakdown
• Timingiscurrently~1ns• ApplygainlayerinHVCMOStoachieve10ps*ming?->neverdonebefore• inves*gatethepossibilitywithsimula*ons• CanuselessonslearnedfromLGAD
Fast Timing Silicon Detectors
13July7,2016 JessicaMetcalfe
4DSiliconTrackingDetectorDesignTargets
Tracker EMcalorimeter Bestachieved
Pixelsize 20-50μm 1cm ✔
TimeresoluGon 10ps 10-30ps 50ps
RadiaGontolerance(Neq/cm2) 1x1015(?) 1x1014 1x1014
Monolithicdesign yes yes no
o TargetvaluestobeconfirmedwithsimulaGonsincludedinthisproposal
Fast Timing Silicon Detectors
14July7,2016 JessicaMetcalfe
ProposedWork:Year1SimulaGonintensive1) Detectorsimula<ons• VerifytargetrequirementsforGming,pixelsize,radiaGondose• InvesGgateGmingimpactsonphysicsperformance• UsethesoowareframeworkfortheSiDdetector• SergeiChekanov@ANLisanexpertandwillsupervisestudent/postdoc• Submi`edseparateproposalfor(complimentary)simulaGonwork
• BenefitsofGming• VertexreconstrucGon• TrackreconstrucGon• ParGcleID• AsanEMcalorimeter• Inaforwarddetector
Fast Timing Silicon Detectors
15July7,2016 JessicaMetcalfe
Proposedwork:Year12)SensorSimula<on• SimulatetheLGADsensorusingSylvacoTCADand/orWeightField2.0(currentsooware
usedforLGADsimulaGons)• Customgeometries• Specifydifferentmaterials,non-uniformiGes• radiaGoneffects• ResponseofanincidentparGcle• DriocurrentgeneraGon• Diffusioncurrent
• ResponsetoradiaGondamage• Electronics->keytoincorporateMAPSdesign
• ExperGseatArgonneintheAPSdivision• AgreedtoshareknowledgeandSylvacolicense
Fast Timing Silicon Detectors
16July7,2016 JessicaMetcalfe
Proposedwork:Year13)SensorDesign• IdenGfychallengesandmethodstoimplementaMAPSdesign• EstablishcollaboraGonwithadesigner,TBD• IdenGfyfabricaGonsitethatmaybeabletoimplementtheparametersweneed• CMOSprocess• HighresisGvitysubstrate• Dopingforthegainlayer
Fast Timing Silicon Detectors
17July7,2016 JessicaMetcalfe
Proposedwork:Year13)LGADSensorTes<ng• CollaboratewithUCSantaCruztolearntotesttheirdevices• SetupDAQchain,mostlikelySAMPIX• ParGcipateintestbeams(travelfunds)• ProbestaGonmeasurements• IV,CV
• Laserand/orradioacGvesourcemeasurementstoinducesignalcharge• ChargecollecGonefficiency• TransientCurrentTechniqueforesGmaGngtheeffecGvedopingconcentraGon
• Year1and2:Establishproceduresformicroscopicanalysis• LeverageexperienceinMaterialScience(andNanoTechnologydivisions)• Scanninglasermicroscopy• Spectroscopictechniques• EffecGvedopingconcentraGon,typesofdefects,trappingcenters,resisGvity,
mobility,etc.
• SupporttointegrateLGADtoteststandandforMSDexperGseiswrappedintotheelectricalengineer(EE)andmechanicalengineer(ME)supportat~5weekseach
Fast Timing Silicon Detectors
18July7,2016 JessicaMetcalfe
PlanSummary:
PI postdocgrad
student EE MESensordesigner
TCADexpert
SimulaGonexpert
Materialexpert
Year1
DetectorSimulaGonevaluatetheimpactof4Ddetectoronphysicsperformanceusingfast/fullsimulaGon ✔ ✔ ✔
definetargetGmingresoluGon ✔ ✔ ✔ 4DSensorSimulaGon TCADsimulaGonofmonolithicLGADdevice ✔ ✔ ✔
4DSensorDesigndesign4DsensorconceptfortargetGmingresoluGon(expected10-30ps) ✔ ✔ ✔ ✔
4DSensorTesGng developlaboratoryteststand ✔ ✔ ✔ ✔ ✔ ✔
gainexperiencewithexisGngLGADdevices ✔ ✔ ✔ Year2 4DSensorDesign implementdesignconcepttotargetGming ✔ ✔ ✔ 4DSensorFabricaGonjoinmulG-projectwaferrunforproducGon ✔ ✔ ✔ 4DSensorTesGng laboratoryteststandcharacterizaGonmeasurements ✔ ✔ ✔ ✔ ✔
Year3 4DSensorTesGng irradiateandtest4Dsensorsamples ✔ ✔ ✔ ✔ ✔ performtestbeammeasurementswiththe4Dsensors ✔ ✔ ✔ ✔ ✔
4DBenchmarksassesspotenGalofthetechnologytomeetdesigntargetsforEIC ✔ ✔ ✔
definemaintechnologicalchallenges ✔ ✔ ✔ proposesoluGons ✔ ✔ ✔ 4DSensorDesign(OpGonal) implementsoluGonsinnewdesign ✔ ✔
Fast Timing Silicon Detectors
19July7,2016 JessicaMetcalfe
Budget• Allitemsrepresentfullyloadedcost
Cost($k):Year1 Year2 Year3
postdoc(50%) 65 65 65graduatestudent 20 20 20electricalengineer 20 10 10mechanicalengineer 20 10 10sensordesign 10 50 mulG-projectwaferrun 50materialsandsupplies 20 10 20travel 5 5 15TOTAL 160 220 140
4D: Fast Timing Silicon Detectors
20July7,2016 JessicaMetcalfe
Summary:• 4Ddetectorsareanovel,butgrowing,areainsilicondetectors• AmbiGousprogramtousefastGmingsilicondetectorsintheEIC• NowistheGmetoexploretechnologicaladvances
• ProposalaimstodeterminewhetherUltraFastSiliconDetectorsareworthinvesGnginfortheEIC• ClearlyidenGfydesigntargets• EstablishthephysicsbenefitfromGminginfo• SimulatecurrentLGADsensors• DrawaroadmaptowardUltraFastSiliconMAPS
4D Silicon
21July7,2016 JessicaMetcalfe
ThankYou
Timing for Vertexing
22July7,2016 JessicaMetcalfe
Timingprecision• VertexidenGficaGoninforwardregionswithGmingispossible• TimeofflighttodetectortoidenGfyvertex
• Exampleforadetectorat3.5minzfromIP
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0 1 2 3 4 5 6 7
<me(ps)
y(m)
TimingPrecision
10mm
5mm
1mm
=>Timingontheorderof10psforpar<cleID,vertexing,andtracking
4D Silicon
23July7,2016 JessicaMetcalfe
FromRikYoshida’stalkyesterday
4D Silicon
24July7,2016 JessicaMetcalfe
ElectricField
depth
p+strips
n+layer
n-typebulk
AcGveregion
TraversingParGcle
Holedrio
Electrondrio
~300μm
V-
-- -----+ -
++ +++++
ReminderofSiliconDetectorOpera<on:
• Diodewithp-njuncGon• Applybiasvoltagetocreatearegionofstablespacechargeandlinearelectricfield
• thisregionisthedepleGonregionoracGveareaofthesensor• MIPparGclecreateselectronholepairs
• driotostripimplantsandbackplane• signalisreadoutbyFront-Endelectronics
4D Silicon
25July7,2016 JessicaMetcalfe
NicoloCarGgliaCERNEPDetectorSeminar9/26/2014
4D Silicon
26July7,2016 JessicaMetcalfe
HowdoweachievefastGmingontheorderof10ps?• CurrenttradiGonalsilicontechnologieshaveriseGme~1-10nsdeterminedbythedrio
velocityinanelectricfield• Fasterspeedsachievedbyreducingthelengthe-hpairstravel->ThinSensors• Createanavalancheregion
NicoloCarGgliaCERNEPDetectorSeminar9/26/2014
4D Silicon
27July7,2016 JessicaMetcalfe
4D Silicon
28July7,2016 JessicaMetcalfe
MSD: Scanning Laser Microscopy
29July7,2016 JessicaMetcalfe