Efficiency Through Technology PRODUCT BRIEF 650V Ultra Juncon X2-Class HiPerFET TM Power MOSFETs FEBRUARY 2016 Opmized for soſt switching power conversion applicaons IXYS Corporaon (NASDAQ: IXYS), a global manufacturer of power semiconduc- tors and integrated circuits (ICs) for energy efficiency, power management, transportaon, medical, and motor control applicaons, announces an expan- sion of its Ultra Juncon Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current rangs ranging from 22A to 150A, these devices are opmized for soſt-switching resonant-mode power conversion applicaons. The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soſt recov- ery characteriscs, minimizing electromagnec interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and me, the body diodes can be ulized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Like other Ultra Juncon MOSFETs from IXYS, these new devices have been developed using a charge compensaon principle and proprietary process technology, resulng in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the posive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Suitable applicaons include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, roboc and servo control, baery chargers, 3-level solar inverters, and LED lighng. These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following internaonal standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current rangs of 22A, 34A, 120A, and 145A, respecvely. OVERVIEW www.ixys.com www.ixys.com FEATURES Low R DS(ON) and Q g Fast body diode dv/dt ruggedness Avalanche rated Low package inductance Internaonal standard packages APPLICATIONS Resonant mode power supplies High intensity discharge (HID) lamp ballast AC and DC motor drives DC-DC converters Roboc and servo control Baery chargers 3-level solar inverters LED lighng Unmanned Aerial Vehicles (UAVs) ADVANTAGES Higher efficiency High power density Easy to mount Space savings TO-263 D S G TO-220 SOT-227 PLUS247 TO-264 TO-247 PLUS264
Transcript
Effi ciency Through TechnologyP R O D U C T B R I E F
650V Ultra Junction X2-Class HiPerFETTM Power MOSFETs
FEBRUARY 2016
Optimized for soft switching power conversion applications
IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconduc-tors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, announces an expan-sion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications.
The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soft recov-ery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency.
Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, and LED lighting.
These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.
OVERVIEW
www.ixys.comwww.ixys.com
FEATURESLow RDS(ON) and Qg
Fast body diodedv/dt ruggednessAvalanche ratedLow package inductanceInternational standard packages
APPLICATIONSResonant mode power suppliesHigh intensity discharge (HID) lamp ballastAC and DC motor drivesDC-DC convertersRobotic and servo controlBattery chargers3-level solar invertersLED lightingUnmanned Aerial Vehicles (UAVs)
ADVANTAGESHigher efficiencyHigh power densityEasy to mountSpace savings
TO-263 D
SG
TO-220
SOT-227
PLUS247
TO-264
TO-247
PLUS264
1.3www.ixys.comFebruary 2016
Available Parts
PackageType
TO-263
TO-247
TO-220
TO-247
TO-247
TO-247
TO-247
TO-264
PLUS247
SOT-227
TO-264
PLUS247
SOT-227
PLUS264
ID25
TC = 25°C(A)
22
22
22
34
46
60
80
100
100
108
120
120
145
150
RDS(on)
maxTJ=25°C
(Ω)
0.145
0.145
0.145
0.1
0.069
0.052
0.038
0.03
0.03
0.024
0.024
0.024
0.017
0.017
Ciss
typ
(pF)
2190
2190
2190
3230
4570
6300
8300
10800
10800
14000
14000
14000
21000
21000
Qg(on)
typ
(nC)
37
37
37
56
98
108
140
183
183
240
240
240
355
355
trr
typ
(ns)
145
145
145
164
180
180
200
200
200
220
220
220
260
260
RthJC
max
(°C/W)
0.32
0.32
0.32
0.23
0.19
0.16
0.14
0.12
0.12
0.14
0.1
0.1
0.12
0.08
VDSS
(V)
650
650
650
650
650
650
650
650
650
650
650
650
650
650
PartNumber
IXFA22N65X2
IXFH22N65X2
IXFP22N65X2
IXFH34N65X2
IXFH46N65X2
IXFH60N65X2
IXFH80N65X2
IXFK100N65X2
IXFX100N65X2
IXFN120N65X2
IXFK120N65X2
IXFX120N65X2
IXFN150N65X2
IXFB150N65X2
PD
max
(W)
390
390
390
540
660
780
890
1040
1040
890
1250
1250
1040
1560
Application Circuits
Application Circuits Legend
Figure 1 represents a generalized High Intensity Discharge (HID) lamp ballast, which constitutes a Power Factor Correction (PFC) stage, gate drivers, microcon-troller, and an auxiliary power supply. The full-bridge can be constructed using 4 soft-switching IXFP22N65X2 X2-Class HiPerFET™ MOSFETs (M1, M2, M3, and M4).
Figure 1: High Intensity Discharge (HID) lamp ballast
VAC Input IgnitorLamp
M3
M1
M4
M2
Figure 3 depicts a generic solar inverter circuit comprised of a Power Factor Correction (PFC) boost converter and full-bridge power inverter stage. The input power from the solar panel enters the PFC converter and then the full-bridge inverter, before interfacing with the electrical grid. Four IXFH80N65X2 Ultra-Junction HiPerFET™ MOSFETs (M1, M2, M3, and M4) can be utilized to construct the full-bridge stage. The IXTH80N65X2 (M5), one of our previously released Ultra Junction devices optimized for hard-switching applications, can be used to realize the PFC.
Figure 3: Solar inverter
L1
SOLAR
PANEL
C1
D1PFC BoostConverter
Full BridgeInverter
Electric Grid
M1
M2
M5
M3
M4
PFC and Gate DriverController
Figure 2 illustrates a typical LLC resonant DC-DC converter. It consists of a half-bridge stage, control unit (power supply, MCU, and MOSFET gate driver),resonant tank, and a rectifier and filter stage. The resonant tank is made up of the inductors (Lr and Lm) and capacitor (Cr). Two Ultra Junction HiPerFET™ MOSFETs (IXFK120N65X2) are paired to form the LLC half-bridge resonant converter stage to ensure a fast, space-saving, and energy-efficient power switching operation.
Figure 2: LLC resonant half-bridge converter
Cr Lr
Lm
n:1:1
M1
M2
D1
CO RL
Vbus
D2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
