A Bolometer Array Instrument for Millimeter Wavelength

Philippe Camus, CNRS-CRTBT (Grenoble)

Milano, July 6th, 2001

Bolometric Millimeter Camera

• Sunyaev-Zel’dovich effect• High-Z objects and star formation regions imaging at 1mm=> wavelength 1.2mm /2.1mm

Which detector at 2.1mm?

IRAM 30m

• Field 5X5 arcmin• 256 pixel@2.1mm• 1024 pixel@1.2mm

Today and future Instruments

MAMBO (IRAM 30m)37 bolometer array on

Si3N4 membrane(MPfir)

NAME Size(#Pixel)

Wavelength T Detectors

Suzie I(CSO 10.4m)

6 1.1-1.4-2.1mm

300mK NTD+diamant

+nylonSuzie I.5

(CSO 10.4m)12 300mK Spider Web

SHARC(CSO 10.4m)

24 350-450-850

300mK Si impl.Bo+Si

SCUBA(JCMT 15m)

9137

350/450850

100mK

MAMBO(IRAM 30m)

37 1.2mm 300mK NTD-Ge+Si3N4

BOLOCAM(CSO 0.4m/LMT 50m)

151 2.1 - 1.4-1mm

300mK Spider Web

SCUBA2(JCMT 15m)

2000010000

450850

250mK TES+SquidMux

Optical Layout

Cryostat

• Dilution 100-300mK• Adaptation to ‘any’ detector Arrays

20x10-3

15

10

5

0

V

20x10-9

151050

A

Bolo @296mK Bolo @300-310mK Bolo @350mK Membrane @293mK Membrane @342mK

NbSi Bolometer (CSNSM/Service d’Aéronomie)

Bolometer on thin Si3N4 Memebrane 5X5mm e=100nm

Thin film geometry optimisation(typ. 100X400 e=100nm) NEP = 5.10-16 W/Hz 1/2 @300mK

or 5.10-17 W/Hz 1/2 @100mK

Small Array Development(6X6 detectors)

NbSi layer co-evaporation& Lithography

Objective 8X8 bolometers

R(T) de neuf echantillons NbSi

0

1

2

3

4

5

6

390 720 725 800

T(mK)

V(Volt)

Chaque couleur correspond à un des neufs échantillons mesurés(Grenoble 28/04/01)

Electronic Read-Out

• Multiplexing is required to reduce the number of output amplifiers (JFET)

• Low dissipation/low temperature operation (HEMTor MOSFET?)

• Objective of 8 detector/amplifier