A new large signal compact model: Quasi-Physical Zone ...

微波毫米波集成电路与系统实验室Microwave and Millimeter-wave Technology(MMT) Lab

A new large signal compact model:Quasi-Physical Zone Division model

Dr. Yuehang XuEmail:[email protected]

MOS-AK Beijing compact modeling workshop


Content

I. BackgroundII. QPZD modelIII. ApplicationsIV. Conclusion


Microwave and Millimeter-wave Technology (MMT) Group

Since 20031.Emerging Electronic Devices

2.MMICs3.RF microsystem

GaN HEMTs

Flexible CNT FETs

Flexible GFET

Diamond FETs GaAs/GaN/InPMMIC T/R modules



InP HBT model @300GHzWIN 0.25um GaN HEMTs model

0.4um/0.25/0.15/0.1μm GaN HEMTs model

Diamond FETs

RF G-NEMS Compact model

10GHz


5



I. Background

Device design Circuits design

(Compact model)

Unified model=physics+ accuracy?

Fully physical

Lack of accuracy

Physics-based & Empirical

Very good accuracy


Compact model coalition(CMC)

Angelov model

I. Background

Physical Compact model: ASM-HEMT, MVSG, ….


¾ Anvanced Angelov modelI. Background

2.

¾ p

2. Scalable model:¾ Nonlinear

Rth=f(Nf,Wf,Pdiss.)¾ Ipk0 in the Ids

1. Improved electrothermal model with both Self-Heating and Ambient Temperature Effects


Harmonic tuned HPA

¾ Anvanced Angelov modelI. Background


Physical compact models: ¾ Advantages :More intuitive in physics; Less fitting parameters;

Naturally scalable;¾ Methods:

z Surface potential model 9UC Berkeley&IIT ：S. Khandelwal (ASM-HEMT)9Tsinghua &UESTC: Y. Wang & Y. Xu(2016EUMW, 2017 IMS, IEEE T-MTT,2018)

z Charge based model 9MIT: Antoniadis/Radhakrishna ( MVSG)9CEA-LETI: F. Martin9UESTC: Y.Xu (2018 IMS)

z Zone division model 9North Carolina State University：R. Trew9UESTC：Y. Xu (2017 IMS, IEEE T-MTT, 2017)

I. Background


¾ Improved ASM-HEMT model

I. Background

Self‐heating Effects

)]11(1[)(0TT

PT Teoe ��| PP

)1( 221 VVleo EmEm �� PP

))(())((

0 dsqdsdssubdsqsubs

gspinchoffgsgspinchoffgsqsurfgsgseff

VVVVkVVVVkVV

��

��

trapping Effects


¾ Improved MVSG model

I. Background

� �0

( )tanh ,

0

,

dsq dsthv thc ds dsq

dsqth dsq

thc ds dsq

V VV V V

VV V

V V V

§ ·�' � d° ¨ ¸¨ ¸ z® © ¹

° !¯


For the Source/Drain Neutral Zone Z1/Z3,

To further reduce the N. of fitting parametersII. Quasi-Physical Zone Division (QPZD) model

D. Hou, G. L. Bilbro, and R. J. Trew, IEEE Trans.Electron Devices, 2013.

Calculation of ns(Vgs):


In the Intrinsic FET Zone

4*50um at room temperature without self-heating

¾ For GaN HEMT, there is only three variables: Ec(T), λ,and Imax(T).

¾ Let Imax is self-heating -independent, Ec become Ec’.

II. Quasi-Physical Zone Division (QPZD) model


Self-heating

5 fitting parameters for self-heating



Ambient temperature


7 fitting parameters for Ambient temperature effects



0.15-μm GaN HEMTs

4 × 50 μm device for f1 = 30 GHz and f2= 30.001 GHz, Vgs = −2 V and Vds = 25 V, deep class AB.


[4] K. S. Yuk, G. R. Branner, and D. J. McQuate, IEEE Trans. Microw. Theory Techn, 2009.[8] I. Angelov et al., in Proc. Eur. Microw. Conf.,2013.[16]S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, IEEE J. Electron Devices Soc., 2017.[18]Q. Wu, Y. Xu, Z. Wang, L. Xia, B. Yan, and R. Xu, IEEE IMS., USA, 2017[22]G. L. Bilbro and R. J. Trew, IEEE Trans. Electron Devices, 2015.[30] Y. Xu et al, IEEE Trans. Microw. Theory Techn,2017.

7



III. Applications

（a）2×125μm （b）6×100μm （c）8×125μm

4*125um, Vgs=-3V, Vds=25V


III. Applications

¾ Yield analysis based on physical parameters


III. Applications

Yield analysis based on physical parameters


(a) Extracted from measurements (b) Simulated

III. Applications

Yield analysis based on physical parameters


III. Applications


III. Applications


¾ We have developed an new quasi-physical compactmodel for AlGaN/GaN HEMT, which shows less fittingparameters.

¾ Future works will be focus on Fully compact physicalmodel with no fitting parameters, calling unified model, inthe perspective RF microeletronic systems and meet therequirements of 5G communication systems.

IV. Conclusion


References¾ Advanced Angelov model1. C. Wang, Y. Xu*, et al., "An Electrothermal Model for Empirical Large-Signal Modeling of AlGaN/GaN HEMTs Including

Self-Heating and Ambient Temperature Effects," IEEE Transactions on Microwave Theory & Techniques, vol. 62, pp.2878-2887, 2014.

2. Y. Xu*, C. Wang, et al., "A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC” IEEE Transactions on Microwave Theory & Techniques, vol. 65, no.8, pp. 2836-2846, 2017.

3. X. Zhao, Y. Xu*et. al， Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-WaveAlGaN/GaN HEMTs ， IEEE Transactions on Microwave Theory & Techniques, vol. 65, no.7, pp. 2836-2846, 2017.

¾ Improved ASM-HEMT model1. Q. Wu, Y. Xu*,, "A surface potential large signal model for AlGaN/GaN HEMTs," in 2016 11th European Microwave

Integrated Circuits Conference (EuMIC), 2016, pp. 349-352.2. Q. Wu, Y. Xu*, et. al, “Implementation of self-heating and trapping effects in surface potential model of AlGaN/GaN

HEMTs,” IEEE International Microwave Symposium (IMS), Honolulu, USA, Jun. 2017.3. Q. Wu, Y. Xu*, et al., A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs, IEEE Transactions on

Microwave Theory & Techniques, 2018

¾ Improved MVSG model1. Yonghao Jia, Y. Xu*，Y.Guo*, Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in

AlGaN/GaN HEMTs. ,” IEEE International Microwave Symposium (IMS), USA, Jun. 2018.

¾ QPZD model1. Z. Wen, Y. Xu*, et. al, “A new compact model for AlGaN/GaN HEMTs including self-heating effects,” IEEE International

Microwave Symposium (IMS), Honolulu, USA , Jun. 2017.2. Z. Wen, Y. Xu*, et al., A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs， IEEE Transactions on

Microwave Theory & Techniques，2017


Acknowledgement


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A new large signal compact model: Quasi-Physical Zone ...

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