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A New Laser Source for SEE Testing ESA/ESTEC, Noordwijk, The Netherlands Presented by Isabel López-Calle ESA/ ESTEC/ TEC-QEC Section & Complutense University of Madrid
A New Laser Source for SEE Testing
ESA/ESTEC, Noordwijk, The Netherlands
Presented by Isabel López-Calle ESA/ ESTEC/ TEC-QEC Section & Complutense University of Madrid
2/16
Challenge
Selection of space components capable of withstanding the harsh radiation environment for which they operate in
Solar Protons &
Heavy Ions
Galactic Cosmic Rays
Trapped Particles in
Van Allen Belts Issues
Development of radiation hard components and evaluation of EEE components suitable for flight on spacecraft. Solution
LASER SYSTEM FOR Simulation of SPACE ENVIRONMENT as a complementary tool for EEE component SEE characterization/screening
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
3/17
Electrical Properties
Ionizing Radiation Non Ionizing Radiation
Metal Immune from the point of view of their electrical properties.
Immune from the point of view of their electrical properties.
Semiconductor
Generation of electron/hole pairs: Transient currents inside a device.
Creation of energy states in the band-gap, resulting in the alteration of electrical parameters.
Insulator Charge trapping and insulator break-down.
Immune from the point of view of their electrical properties. except opto-electronics
Radiation Effects or Induced Damage on Materials
By LASER SOURCE
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
4/16
HARD ERROR COMPLETE DEVICE DESTRUCTION
SOFT ERROR
Am
plitu
d (V
)
Tiempo (µs)
Amplitud
Duración
LM124 Amp. Op.
Vout
Time (µs)
Am
plitu
de (V
)
Duration
Amplitude By LASER SOURCE
SEE RADIATIONS EFFECTS ON Devices
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
5/16
• Pulso Láser (W0, tp, E, λ)• Interacción electromagnética ionizante
• Partícula Ionizante (E, M)• Interacción coulombiana ionizante
LASER SOURCE
HEAVY ION
• Ionizing Particle (Energy, Mass) • Coulombian Interaction
• Laser Pulse (spot, duration, energy, wavelength) • Electromagnetic Interaction
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
Ion Induced Charge Distribution simulated by a laser pulse
ION (Energy, Mass) LASER (Pulse Energy, Spot Size) ~ r d d w0
~
The laser pulse, as for an ionising particle, generates charge along a track in the semiconductor. However, the shape of charge distribution is understood to be different. Althought the shape of the charge distribution is different, the laser pulse parameters may be tune such that the Single Event Effects observed are the same.
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1.E-081.E-071.E-061.E-051.E-041.E-031.E-021.E-011.E+001.E+011.E+021.E+031.E+041.E+051.E+061.E+07
250 450 650 850 1050 1250 1450
Charge deposition depth @ 400 nm 0.1 µm @ 800 nm 12 µm @ 1000 nm 156 µm @ 1060 nm 900 µm
Wavelength (nm)
Absorption Coefficient of Silicon
α (1
/cm
)
hc /1107 nm = 1.12 eV = E GAP
SPA
TPA
Wavelenght Adventages Disadventages
SPA (Single Photon Absorption)
Linear photo-absorption (Very well characterized
by the absorption coefficient α)
Charge deposition close to the irradiation surface (depends on
the wavelenght)
TPA (Two Photon Absorption)
Charge deposition at any depth in the device
Non-Linear absorption (not well characterized
but experimentally proven)
Green, M.A. and Keevers, M. "Optical properties of intrinsic silicon at 300 K ", Progress in Photovoltaics, p.189-92, vol.3, no.3; (1995)
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
7/16
Data Acquisition Module - Capture Data Synchronization - Printed Circuit Boards - Device Microphotograph - Device Characterization - Data Analysis - One shot System
Irradiation System
Work developed since 2008 …
Ionizing Radiation
Results
Further Job
Conclusion
Introduction
Laser System Set-up
Theoretical Model
1
2
3
4
5 2) Pumped LASER “Millenia” Nd:Vanadato 5W, 532 nm
1) Femtosecond Oscilator “Tsunami” Ti:Zafiro 430 mW, 800 nm, 80 MHz, 50 fs/pulso
3) Pumped LASER “Empower” Nd:YLF 20 mJ/pulso, 527nm, 1 KHz 4 )Regenerative Amplifier “Spitfire” Ti:Zafiro 3.6 mJ/pulso, 800 nm, 1 KHz, 35 fs/pulso
5) Optical Parametric Amplifier “OPA”. Tunable Wavelength from UV (300 nm) to IR (3 μm)
Femtosecond LASER Pulse
8/16
Ionizing Radiation
Results
Further Job
Conclusion
Introduction
Theoretical Model
Laser System Set-up
Tunable wavelength @
LabView to control all the system by means of the GPIB protocol.
Scan over entire integrated circuit or selected areas.
Irradiation System
LASER SPOT
9/16
Ionizing Radiation
Results
Further Job
Conclusion
Introduction
Theoretical Model
Laser System Set-up
Irradiation System
10/16
Comparison between heavy ion irradiation (a) and laser irradiation at UCM (b) over LM124.
a)
b) LASER at UCM shows similar results
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
Heavy ions irradiations LM124 (CP) - Voltage follower
LM324 (PP) – Voltage follower
3 2
1
Y. Boulghassoul. et al. IEEE Trans. Nucl. Sci. vol. 49. pp. 3090-2096. Dec 2002
LM124 ion cocktail: Br, Mg, Cl
TPA Laser Irradiation
Am
plitu
de (V
) Am
plitu
de (V
)
Pulse width (µs)
11/16
a)
b)
Example of 2D (a) and 3D (b) sensitive map after a complete LASER scan over LM124
New representations for analysing the
data.
This is one of the strengths of the laser testing.
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
“Hot Spots” have been detected
3
1
2 1 2
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
12/16
LM111 – Voltage comparator SEE laser test @ 800 nm
Theoretical Model
The most sensitive transistor changes as a function of the input stage
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
Tiempo (µs)
Transitorio Positivo (Vin>0)
Amplitude SET (V)
Same Pulse Energy = 40 pJ Amplitude SET (V)
VIN < 0 Vout = VCC
Q1 is the most sensitive area
VIN > 0 Vout = VEE
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
Transitorio Negativo (Vin<0)
Negative SET
Positive SET
Time ( us)
Time ( us) O
utpu
t Vol
tage
(V)
Out
put V
olta
ge (V
)
Q2 is the most sensitive area
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
13/16
LM111 – Voltage comparator SEE laser test @ 800 nm
Theoretical Model
The most sensitive transistor changes as a function of the input stage
Amplitude SET (V)
Same Pulse Energy = 40 pJ Amplitude SET (V)
Same configuration
TPA @ 1300 nm back-side irradiation
TPA @ 1300 nm & backside irradiation
SPA @ 800 nm fron-side irradiation
The metal layer has been avoided with TPA backside irradiation
14/16
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction COTS SRAM screening map.
Sensitive memory cell blocks have been detected
“Hot Spots” have been detected Alliance LOW POWER CMOS SRAM 64 Kbytes
15/16
The laser irradiation becomes a complementary and useful tool to evaluate the radiation tolerance of the electronic devices
Complementary tool: For the core SEE irradiation testing, today, the laser test system can not replace the heavy facility. Reduce cost of screening activities: When the comparison between HI
and Laser is available because of prior tests. Lasers may be used for additional SEE testing.
Detecting ‘hot spots’: Lasers are excellent tools to identify sensitive nodes in components and subsequently improve radiation hardness in rad. hard EEE component development work.
Theoretical Model
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
Some publications related with SEE Laser testing at UCM-Spain
Peak Detector Effect in Low-Dropout Regulators – RADECS 2012
Laser Tests on a Power Operational Amplifier – RADECS 2011
Modification of the LM124 Single Event Transients by Load Resistors – TNS 2010
Influence of the Bias Conditions on the Single Event Transients of the LM311 Voltage Comparator – RADECS 2010
Two-Photon Absorption (TPA) Backside Pulsed Laser Tests in the LM324 – RADECS 2009
16/16
Where are we?
www.ucm.es/info/electron/sensor/en_welcome.htm
THANKS FOR YOUR ATTENTION
Ionizing Radiation
Laser System Set-up
Results
Further Job
Conclusion
Introduction
Theoretical Model
A New Laser Source for SEE Testing
ESA/ESTEC, Noordwijk, The Netherlands
Presented by Isabel López-Calle ESA/ ESTEC/ TEC-QEC Section & Complutense University of Madrid
