Date post: | 13-Jan-2016 |
Category: |
Documents |
Upload: | bernadette-walters |
View: | 216 times |
Download: | 0 times |
A review of computer modelling of
rare earth doped mixed metal fluoride materials
Robert A JacksonLennard-Jones Laboratories
School of Physical and Geographical Sciences Keele University, Keele, Staffordshire ST5 5BG, UK
With particular thanks to:Mario Valerio, Jomar Amaral, Marcos Rezende,Marcos Couto dos Santos, Jose de Lima (UFS);
Elizabeth Maddock (Keele), David Plant (Keele/AWE)
2
TR2010, Aracaju, Brazil, April 2010
Plan of talk
• What materials are involved?
• What is the motivation?
• Methodologies employed
• Review of results
• Future work
3
TR2010, Aracaju, Brazil, April 2010
What materials?
• Mainly mixed metal fluorides and oxides• They do not have to have complex structures –
e.g. BaLiF3:
• For optical applications, doping is usually necessary. Rare earth (RE) ions are typically used, as their emission wavelengths are suitable for optical applications (in the m range).
inverted perovskite structure
4
TR2010, Aracaju, Brazil, April 2010
How important is doping to enhance optical properties?
• The picture shows a sample of amethyst, which is quartz, SiO2 doped with Fe3+ ions from Fe2O3.
• The value of the quartz is drastically increased by the presence of a relative small number* of Fe3+ ions!
*’As much iron as would fit on the head of a pin can colour one cubic foot of quartz’
http://www.gemstone.org/gem-by-gem/english/amethyst.html
5
TR2010, Aracaju, Brazil, April 2010
Optical Materials: motivation
• We are interested in understanding the behaviour and properties of materials with applications in a range of devices:
• Solid state lasers, where the laser frequency can be ‘tuned’ by changing the dopant.
• Scintillator devices for detecting electromagnetic or particle radiation.
• Nonlinear optical devices, frequency doublers and optical waveguides.
6
TR2010, Aracaju, Brazil, April 2010
Methodology
Calculations are done in 2 stages:1. Standard energy minimisation/Mott-Littleton
calculations to establish location of dopants and charge compensation mechanisms, involving calculation of solution energies.*
2. Crystal field or QM calculations to access electronic properties and optical transitions.
* Some new developments will be mentioned later.
7
TR2010, Aracaju, Brazil, April 2010
Derivation of interatomic potentials
• For the first stage of the calculation, interatomic potentials are required.
• These can be fitted empirically, transferred from other systems or calculated directly.
• Buckingham potentials plus electrostatic terms are normally employed:
V(r) = A exp (-r/) - Cr-6 + q1q2/r
• A, and C are parameters to be fitted
8
TR2010, Aracaju, Brazil, April 2010
Calculation of defect properties & solution energies
• Defect properties (incorporation of dopant ions) are modelled using the Mott-Littleton approximation.
• Here the dopant ion and surrounding ions are modelled explicitly, with more distant ions being treated as a dielectric continuum.
• The method is well-established for modelling defects in inorganic materials.
9
TR2010, Aracaju, Brazil, April 2010
Mott-Littleton approximation
Region IIons are strongly perturbed by the defect and are relaxed explicitly with respect to their Cartesian coordinates.
Region IIIons are weakly perturbed and therefore their displacements, with the associated energy of relaxation, can be approximated.
Region IIa
Defect
Region I
© Mark Read (AWE)
10
TR2010, Aracaju, Brazil, April 2010
Solution energies
• Solution energies include all the energy terms involved in the doping process, including lattice energies and charge compensation terms:
e.g. in LiCaAlF6, for substitution of M3+ cations at the Al3+ site, no charge compensation is needed
For substitution at other sites, there are a range of charge compensation schemes:
11
TR2010, Aracaju, Brazil, April 2010
Solution energy expressions
• M3+ substitution at the Al3+ site in LiCaAlF6
MF3 + AlAl → MAl + AlF3
Esol = -Elatt(MF3) + E(MAl) +Elatt (AlF3)
• M3+ substitution at the Li+ site in LiCaAlF6 with Li+ vacancy compensation:
MF3 + 3LiLi → M••Li + 2V’Li + 3LiF
Esol = -Elatt(MF3) + E(M••Li) + 2E(V’Li) +3Elatt (LiF)
12
TR2010, Aracaju, Brazil, April 2010
Typical sequence of a modelling study
1. Derivation of an interatomic potential for each material, and for the RE-lattice interactions.
2. Calculation of intrinsic defect properties of the material to allow prediction of intrinsic disorder.
3. Calculation of solution energies, used to predict the location of the RE dopants.
4. Calculation of optical properties using crystal field methods.
* Example: ‘Computer modelling of BaY2F8: defect structure, rare earth doping and optical behaviour’ by Amaral et al, Applied Physics B 81 (2005) 841- 846
13
TR2010, Aracaju, Brazil, April 2010
Review of materials
• Since 1995 (my first visit to Aracaju!), we have studied a range of rare-earth doped fluoride materials, particularly:BaLiF3
LiCaAlF6/LiSrAlF6
BaY2F8
‘KYF’ (KYF4, K2YF5 and KY3F10)
• And more recently, BaMgF4 and YLiF4
14
TR2010, Aracaju, Brazil, April 2010
Case study 1: Nd- and Tb-doped BaY2F8*
• BaY2F8, when doped with RE ions, in this case Nd3+ and Tb3+, has applications as a scintillator for radiation detection.
• This material has been the focus of a joint experimental and modelling study.
• Modelling can (i) predict location of dopant ions, and (ii) predict optical properties.
* Based on: ‘Structural and optical properties of Nd- and Tb-doped BaY2F8’ by Valerio et al, Optical Materials 30 (2007) 184–187
15
TR2010, Aracaju, Brazil, April 2010
Potential fitting and solution energy calculations
M3+ doping at the Y3+ site in BaY2F8
MF3 + YY → MY + YF3
Esol= -Elatt(MF3)+ E(MY)+ Elatt(YF3)
Calculated values for Nd, Tb are:
0.64 eV, 0.32 eV
exp calc % diff
a/Å 6.98 6.96 -0.44
b/Å 10.52 10.67 1.42
c/Å 4.26 4.20 -1.61
/ 99.7 98.4 -1.31
16
TR2010, Aracaju, Brazil, April 2010
Crystal field calculations
• The RE ions are predicted to substitute at the Y sites, and relaxed coordinates of the RE ion and the nearest neighbour F ions are used as input for a crystal field calculation.
• Crystal field parameters Bkq are calculated,
which can then be used in two ways – (i) assignment of transitions in measured optical spectra, and (ii) direct calculation of predicted transitions.
17
TR2010, Aracaju, Brazil, April 2010
How good is the method?
• In the OM paper, measured and calculated transitions were compared, and a typical agreement of between 3-5% was observed:
transition Exp. /cm-1 Calc. /cm-1
5D4 7F4
17181 17724
18037 18041
5D4 7F5
18116 19111
19900 19364
18
TR2010, Aracaju, Brazil, April 2010
Summary of case study 1
• The method described has been shown to be able to calculate optical transitions for RE dopant ions in BaY2F8, and reasonable agreement has been obtained with experimental data, implying that it can be used predictively.
19
TR2010, Aracaju, Brazil, April 2010
Case study 2: rare earth doped BaLiF3*
• The study looked at the doping of BaLiF3 with rare earth ions, with a view to identifying the substitution sites and charge compensation mechanisms.
• It was found that the RE ions divided into 4 groups with slightly differing behaviour.
* Based on: ‘Computer modelling of rare-earth dopants in BaLiF3’, by R A Jackson et al, J. Phys.: Condens. Matter 13 (2001) 2147–2154
20
TR2010, Aracaju, Brazil, April 2010
Case study 2 - continued
• The rare-earth ions can be classified into four groups according to the solution energies:
• Group I, La–Nd: substitution at the Ba site with Ba vacancy compensation
• Group II, Sm–Eu: The lowest-energy process is the same as for group I, but the second-lowest-energy process change
• Group III, Gd–Tb: The lowest-energy process is the same as for group I, but the second-lowest-energy process changes •
• Group IV, Dy–Lu (except Ho): Substitution at the Li site becomes more favourable.
21
TR2010, Aracaju, Brazil, April 2010
Study 2 conclusions
• The main conclusions were the preferred substitution sites and the relative ease of doping, which was useful for the experimental work at the time.
22
TR2010, Aracaju, Brazil, April 2010
Case study 3: rare earth doped LiCaAlF6/LiSrAlF6*
• Both materials are used in optical applications. Considering RE doping, there are 3 cation sites!
* Based on: ‘Computer modelling of defect structure and rare earth doping in LiCaAlF6 and LiSrAlF6’, by J B Amaral, D F Plant et al, J. Phys.: Condens. Matter 15 (2003) 2523–2533
23
TR2010, Aracaju, Brazil, April 2010
LiCaAlF6
MAl MCa/Sr-VLi’ MCa/Sr
-Fi’ MLi-VCa/Sr’’
Defect
Fi’ at (¼ ¼ 0)
Fi’ at (½ ½ 0)
Fi’ at (¾½ 0)
Ce 3.96 1.89 1.97 2.11 2.15 1.45
Nd 3.56 1.90 1.95 2.08 2.59 1.90
Eu 2.95 1.92 2.59 2.09 2.11 1.92
Yb 2.37 1.97 2.11 2.12 2.10 5.25
LiSrAlF6
Ce 3.64 2.34 1.99 1.96 1.99 2.36
Nd 3.27 2.46 2.28 5.45 2.01 2.48
Eu 2.71 2.59 2.39 2.12 2.13 5.29
Yb 2.18 2.80 2.89 2.55 2.27 nc
J B Amaral, D F Plant, M E G Valerio and R A Jackson, J. Phys.: Condens. Matter, 15 (2003) 2523
Solution energies for 4 rare earth dopants
24
TR2010, Aracaju, Brazil, April 2010
Case study 4: modelling rare earth doping in the KYF
family
• KYF4, K2YF5 and KY3F10 were considered
• RE ions substitute preferentially at the Y site in all cases.
• In KYF4 a split between Y1 & Y2 sites is observed for some ions.
KYF4
a = b = 14.060 Åc = 10.103 Å
K+ Y3+ F-
RE3+ KY3F10 K2YF5 KYF4 (Y1 site) KYF4 (Y2 site)
La 0.68 0.97 1.00 0.51
Ce 0.56 0.84 0.87 0.43
Pr 0.44 0.70 0.73 0.36
Nd 0.36 0.62 0.65 0.31
Sm 0.13 0.29 0.30 0.08
Eu 0.17 0.33 0.35 0.18
Gd 0.13 0.22 0.23 0.12
Tb 0.04 0.10 0.10 0.02
Dy 0.10 0.11 0.11 0.09
Ho 0.06 0.19 0.22 0.13
Er 0.01 0.03 0.04 0.04
Tm 0.10 0.00 -0.01 0.08
Yb 0.02 0.07 0.09 0.09
Lu 0.17 0.02 0.01 0.16
)()( 33 MFEYFEME lattlattYsol
26
TR2010, Aracaju, Brazil, April 2010
Further work on the KYF materials
• In addition, surface energies were calculated, making it possible to:
1. Predict morphologies of the doped and undoped materials.
2. Study possible segregation of dopants from the bulk to the surface.
• This work will be presented at EURODIM2010 in Pécs, Hungary (http://eurodim2010.szfki.hu)
27
TR2010, Aracaju, Brazil, April 2010
Extra (non RE) case study: Th in LiCaAlF6/LiSrAlF6
• 229Th is being investigated for use in ‘nuclear clocks’; its first nuclear excited state is (unusually) only ~ 8 eV above the ground state, and can be probed by VUV radiation.
• Nuclear clocks promise up to 6 orders of magnitude improvement in precision over next generation atomic clocks!
28
TR2010, Aracaju, Brazil, April 2010
Practical considerations
• The 229Th nucleus needs to be embedded in a VUV-transparent crystal for use in devices.
• Metal fluorides, e.g. LiCaAlF6/LiSrAlF6 have been identified as being suitable.
• A modelling study was therefore carried out.*
* Details in ‘Computer modelling of thorium doping in LiCaAlF6 and LiSrAlF6: application to the development of solid state optical frequency devices’ by Jackson et al, Journal of Physics: Condensed Matter 21 (2009) 325403
29
TR2010, Aracaju, Brazil, April 2010
Modelling Th in LiCaAlF6/LiSrAlF6 – (i)
• In previous work potentials were fitted to the host lattices, and defect properties obtained, including the location of RE dopants (more of a challenge than in BaY2F8!)*
• The challenge was to determine the optimal location of a Th4+ ion in the material.
• Charge compensation will be needed wherever substitution occurs, and resulting defects might affect optical properties.
* See ‘Computer modelling of defect structure and rare earth doping in LiCaAlF6 and LiSrAlF6’ by Amaral, Plant, et al, J. Phys.: Condensed Matter 15 (2003) 2523–2533
30
TR2010, Aracaju, Brazil, April 2010
Modelling Th in LiCaAlF6/LiSrAlF6 – (ii)
• Having fitted a Th4+ - F- potential to the ThF4 structure, solution energies were calculated for doping at the Li (+1), Ca/Sr (+2) and Al (+3) sites, with a range of charge compensation mechanisms.
• The lowest energy scheme was found to correspond to location at a Ca2+/Sr2+ site with charge compensation by F- interstitials.
• Crystal growth studies are in progress, but delayed by scarcity/cost* of 229Th, and politics!
* $50k/mg
31
TR2010, Aracaju, Brazil, April 2010
Future work: concentration dependent solution energies
• In modelling the doping of materials, we make extensive use of the concept of solution energies to determine location of dopants, charge compensation mechanisms etc.
• We are developing new methods which enable us to calculate concentration dependent solution energies up to a limit.
• These should overcome one problem with predictions based on solution energies, which are currently limited to isolated defects.
32
TR2010, Aracaju, Brazil, April 2010
Concentration dependent solution energies
• The basis of the technique is to model, directly, the process for preparing the doped materials:
• e.g. producing doped BaAl2O4:
0.5x M2O3 + BaO + (1 - 0.5x) Al2O3 BaAl2-xMxO4
• We calculate the solution energy of the process by calculating the energy of the reaction directly.
• The left hand side is straightforward; for the right hand side we assume (for solution at the Al site):
E [BaAl2-xMxO4]= (1–0.5x) Elatt(BaAl2O4) + x E(MAl)
33
TR2010, Aracaju, Brazil, April 2010
Acknowledgements
Keele University Centre for the Environmental, Physical and Mathematical Sciences