Dr. Victor Veliadis
Deputy Executive Director and CTO, PowerAmerica
Professor ECE North Carolina State University, Raleigh, NC USA
Accelerating Adoption of Wide Bandgap Semiconductor Technologies
PowerAmerica is a U.S. Department of Energy WBG Semiconductor Manufacturing Institute
• The U.S Department of Energy launched the PowerAmericaInstitute under the initiative of “National Network of Manufacturing Institutes (NNMI)” to Accelerate Adoption Wide Band Gap (WBG) power devices
• PowerAmerica started operations in 2015 with $140M funds over 5 years, and is managed by North Carolina State University in Raleigh, NC USA
• PowerAmerica addresses gaps in technology to enable manufacturing that contributes to its mission of realizing manufacturing jobs creation and energy savings through accelerated large-scale adoption of WBG semiconductor devices in power electronic systems
Veliadis, PowerAmerica Proprietary
Strategic DOE/PowerAmerica BP3 Funding Allocation Addresses Gaps in Technology to Enable WBG Manufacturing
BP3: July 2017 – June 2018
Veliadis, PowerAmerica Proprietary
USCi Fabricates 1200 V Planar MOSFETs on
150-mm Wafers at X-FAB
Objective: Develop 40mOhm, 1200V planar MOSFET
• Breakdown values on target
• Vth lower than target
• On-state behavior looks good
• Basic TO247 Rel test data looks good –
see table
• Basic Switching and UIS tests look good
Test stress conditionduratio
n sample
size status
HTGBVGS=+20V, VDS=0,
Ta=150C 1000hrs 77 Pass
HTGBRVGS=-10V, VDS=0,
Ta=150C 1000hrs 77 Pass
HTRBVDS=960V, VGS=0,
Ta=150C 1000hrs 77 Pass
ABB Fabricates 3.3 kV SiC Schottky Diodes
and MOSFETs on 150-mm Wafers at X-FAB
Top view of a 3.3kV SiC JBS diode wafer in process
ABB Processes SiC diodes and MOSFETs on 150 mm SiC wafers for the first time:
Process routers developed in collaboration with XFAB
3.3 kV rated SiC Schottky and MOSFET wafers fully processed with encouraging yields (testing underway)
Pathways determined for cost reduction in future volume manufacturing
Next Steps: Test a statistically relevant number of dies to evaluate yield/performance
Schematic cross section of 3.3kV SiC JBS diode
Objective: Qualify 150-mm Si foundry for SiC processing
Wolfspeed Foundry Fabricates 3.3 kV/40 m SiC MOSFETs and 10 kV/15 A SiC JBS Diodes
8.10 mm
8.1
0 m
m
6.2 mm
6.2
mm
10kV/15A SiC JBS Diode 100% Passed 1000 hr HTRB at 175C & 8 kV (80% 10 kV)
0
2
4
6
8
10
0 200 400 600 800 1000
Leak
age
Cu
rre
nt
(µA
)
Hours
8.86 mm
4.82
mm
3.3 kV/40 mΩ SiC MOSFET Die 100% Passed 1000 hr HTRB at
175C & 2.64 kV (80% 3.3 kV)
Objective: Qualify 3.3 kV/40 m MOSFETs and 10 kV/20 A SiC JBS Diodes
Wolfspeed Foundry Fabrication and Qualification of 3.3 kV/45 m and 10 kV/350 m SiC MOSFETs is Underway
Tight RDS,ON Distribution Very Low Blocking Leakage Current
• All 3x 3.3 kV/45 m SiC MOSFET Qualification Fabrication Lots Completed with Good Yields• 3x25 3.3 kV/45 m SiC MOSFET JEDEC Qualification Activity Underway
4.9mm
7.7mm
3.3 kV/45 mSiC MOSFET
• All 3x 10 kV/350 m SiC MOSFET Qualification Fabrication Lots Completed with Good Yields• 3x25 10 kV/350 m SiC MOSFET JEDEC Qualification Activity Underway
10 kV/350 mSiC MOSFET
8.1mm
8.1
mm
Wolfspeed Develops 3.3-kV and 10-kV SiC Modules
with Customizable Device Configuration
3.3 kV Industry Standard Footprint Module with Low Inductance
Monolith Announces Fully Qualified 1200V SiC Schottky
Diodes Fabricated on 150-mm Wafers at X-FAB
Objective: Develop manufacturable, high yielding and low-cost 1200 V SiC Schottky diodes with best-in-class performance and reliability at X-FAB’s 150-mm SiC foundry.
Monolith is working with Littelfuse in bringing the fully qualified 1200V, 5A and 10A diodes to market
Monolith is currently working on expanding diode portfolio – current rating and packages
GeneSiC Fabricates 1200 V / 200 A Schottky
Diodes on 150-mm Wafers at X-FAB Texas
Multiple Devices
5 µA at 1200 V
Data from 5 Devices
1200 V / 200 A SiC packaged Schottky Diode engineering samples demonstrated with good yields at at X-FAB’s 150-mm SiC foundry
• PowerAmerica seeks public input on applied research topics addressing
gaps in knowledge and technology to enable manufacturing that will
contribute to its mission of realizing manufacturing jobs creation and
energy savings through accelerated large-scale adoption of wide bandgap
semiconductor devices in power electronic systems.
• PowerAmerica is NOT seeking to support development of:
Materials
WBG semiconductor technology areas which have not yet
demonstrated technical feasibility
Fabrication approaches for technologies that have already been
demonstrated to be suitable for high-volume manufacturing
PowerAmerica is Issuing a Request for Information (RFI)
to Develop its Funding Period 4 Request for Proposals
https://www.poweramericainstitute.org/news/poweramerica-request-for-information-rfi-now-open-for-public-input/