Advance Datasheet Revision: April 2015 - Northrop Grumman©2015 Northrop Grumman Systems Corporation...

Advance Datasheet Revision: April 2015

APN236 34.5-35.5 GHz GaN Power Amplifier

Web: http://www.as.northropgrumman.com/mps ©2015 Northrop Grumman Systems Corporation

Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]

Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.

Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by

this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of

Industry and Security export license.

Product Features

RF frequency: 34.5 to 36.5 GHz

Linear Gain: 16 dB typ.

Psat (est): 40 dBm typ.

PAE @ Psat typ.: 24%

Die Size: 7.155 sq. mm.

0.2um GaN HEMT Process

4 mil SiC substrate

DC Power: 28 VDC @ 996 mA

Product Description The APN236 monolithic GaN HEMT amplifier

is a broadband, balanced two-stage power

device, designed for use Military Radar

Systems. To ensure rugged and reliable

operation, HEMT devices are fully

passivated. Both bond pad and backside

metallization are Au-based that is compatible

with epoxy and eutectic die attach methods.

Applications

Military Radar Systems

Performance Characteristics (Ta = 25°C)

Absolute Maximum Ratings (Ta = 25°C)

X = 2700 um Y = 2650 um

Page 1

Specification Min Typ Max Unit

Frequency 34.5 35.5 GHz

Linear Gain 15 16 dB

Input Return Loss 14 16 dB

Output Return Loss 9 11 dB

P1dB (Pulsed)* 38 dBm

P1dB (CW)** 37.5 dBm

Psat (Pulsed)* 40 dBm

Psat (CW)** 39.5 dBm

PAE @ Psat 24 %

Vd1, Vd1a, Vd2, Vd2a 28 V

Vg1, Vg1a, Vg2, Vg2a -3.5 V

Id1+ Id1a 256 mA

Id2,+Id2a 740 mA

Parameter Min Max Unit

Vd1, Vd1a, Vd2, Vd2a 20 28 V

Id1+ Id1a 320 mA

Id2+ Id2a 920 mA

Vg1, Vg1a, Vg2, Vg2a -5 0 V

Input drive level TBD dBm

Assy. Temperature 300 deg. C

(TBD seconds)

* On –Wafer

** Fixture









0

2

4

6

8

10

12

14

16

18

20

30 31 32 33 34 35 36 37 38 39 40

Gain

(d

B)

Frequency (GHz)

0

5

10

15

20

25

30

35

40

45

32 33 34 35 36 37 38

Po

ut

(dB

m),

Gain

(d

B),

PA

E%

Frequency (GHz)

Linear Gain (dB) Gain @ Pin=0 dBmPGain @ Pin=31 dBm Pout @ Pin=31dBmP1dB (dBm) Psat (dBm)PAE% @ PSat Max PAE%

-30

-25

-20

-15

-10

-5

0

30 31 32 33 34 35 36 37 38 39 40

Inp

ut

Retu

rn L

oss (

dB

)

Frequency (GHz)

-30

-25

-20

-15

-10

-5

0

30 31 32 33 34 35 36 37 38 39 40

Ou

tpu

t R

etu

rn L

oss (

dB

)

Frequency (GHz)

Linear Gain vs. Frequency

Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)

Vd1, Vd1a, Vd2, Vd2a = 28 V, Id1 + Id1a = 256 mA, Id2 + Id2a = 740 mA*

Input Return Loss vs. Frequency

Power, Gain, PAE% vs. Frequency

Output Return Loss vs. Frequency

* Pulsed-Power On-Wafer

Page 2









0

5

10

15

20

25

30

35

40

45

32 33 34 35 36 37 38

Po

ut

(dB

m),

Gain

(d

B),

PA

E%

Frequency (GHz)

Linear Gain (dB) Gain @ Pin=0 dBmPGain @ Pin=31 dBm Pout @ Pin=31dBmP1dB (dBm) Psat (dBm)PAE% @ PSat Max PAE%

0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

0 2 4 6 8 101214161820222426283032

Po

ut

(dB

m)

Gain

(d

B)

Input Power (dBm)

Gain @ 33GHz Gain @ 34GHz

Gain @ 35GHz Gain @ 36GHz

Gain @ 37GHz Pout @ 33GHz

Pout @ 34GHz Pout @ 35GHz

Pout @ 36 GHz Pout @ 37 GHz

Pout

Gain

0

5

10

15

20

25

30

35

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

PA

E%

Input Power (dBm)

33GHz

34GHz

35 GHz

36 GHz

37 GHz

0

100

200

300

400

500

600

700

800

900

1000

0

100

200

300

400

500

600

700

800

900

1000

0 2 4 6 8 101214161820222426283032

Id2 (

mA

)

Id1 (

mA

)

Input Power (dBm)

Id1 @ 33GHz Id1 @ 34GHzId1 @ 35 GHz Id1 @ 36 GHzId1 @ 37 GHz Id2 @ 33GHzId2 @ 34GHz Id2 @ 35 GHzId2 @ 36 GHz Id2 @ 37 GHz

Pout & Gain Vs. vs. Pin

Id vs. Pin

PAE% vs. Pin

* On-Wafer Pulsed-Power

Page 3

Pout, Gain & PAE% vs. Frequency











0

100

200

300

400

500

600

700

800

900

1000

0

100

200

300

400

500

600

700

800

900

1000

0 2 4 6 8 101214161820222426283032

Id2 (

mA

)

Id1 (

mA

)

Input Power (dBm)

Id1@34GHz [email protected]@35GHz [email protected]@36GHz Id2@[email protected] Id2@[email protected] Id2@36GHz

0

5

10

15

20

25

30

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

PA

E%

Input Power (dBm)

34GHz

34.5GHz

35GHz

35.5GHz

36GHz

0

5

10

15

20

25

30

35

40

45

32 33 34 35 36 37 38

Po

ut

(dB

m),

Gain

(d

B),

PA

E%

Frequency (GHz)

Gain0dBm P1dB (dBm)

P3dB(dBm) PAE% @ P3dB

MAX PAE% Psat(dBm)

PAE% @ Psat

0

4

8

12

16

20

24

28

32

36

40

44

0

2

4

6

8

10

12

14

16

18

20

22

0 2 4 6 8 10 12 14 1618 2022 24 26 28 30 32

Po

ut

(dB

m)

Gain

(d

B)

Input Power (dBm)

Gain@34GHz [email protected]

Gain@35GHz [email protected]

Gain@36GHz Pout@34GHz

[email protected] Pout@35GHz

[email protected] Pout@36GHz

PoutGain

Pout & Gain Vs. vs. Pin

Id vs. Pin

PAE% vs. Pin

* CW Fixture

Page 4

Pout, Gain & PAE% vs. Frequency

Measured Fixture Performance Characteristics (Typical Performance at 25°C)










* Pulsed-Power On-Wafer

Page 5

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

8.0 0.788 -175.150 0.056 -69.128 0.002 -149.171 0.624 145.730

8.5 0.792 177.549 0.054 -50.533 0.003 100.724 0.595 126.795

9.0 0.782 169.211 0.081 -26.971 0.005 98.959 0.528 102.406

9.5 0.767 160.468 0.171 -9.116 0.006 84.303 0.455 75.452

10.0 0.743 148.982 0.425 -13.926 0.002 39.443 0.386 43.034

10.5 0.685 136.345 1.041 -37.959 0.004 45.457 0.307 6.553

11.0 0.606 120.640 2.053 -72.411 0.005 78.299 0.252 -24.432

11.5 0.461 101.870 3.697 -111.478 0.004 -19.991 0.229 -50.326

12.0 0.305 82.279 5.877 -156.942 0.006 22.788 0.215 -71.266

12.5 0.140 57.241 7.944 156.616 0.006 -11.884 0.209 -83.304

13.0 0.033 -7.924 9.536 110.075 0.004 -57.805 0.223 -95.152

13.5 0.107 -101.508 10.221 65.248 0.007 -38.639 0.217 -111.473

14.0 0.192 -119.288 10.070 25.403 0.002 -170.834 0.204 -115.664

14.5 0.245 -134.405 10.015 -11.781 0.002 -161.559 0.172 -119.745

15.0 0.273 -143.902 10.061 -47.813 0.002 64.799 0.174 -116.071

15.5 0.254 -141.837 9.979 -83.956 0.004 125.238 0.186 -115.597

16.0 0.259 -133.613 9.615 -121.442 0.004 51.271 0.205 -120.465

16.5 0.348 -122.232 8.968 -159.474 0.005 5.375 0.227 -134.886

17.0 0.477 -126.098 8.065 162.641 0.005 -6.692 0.200 -153.352

17.5 0.569 -132.862 6.836 125.406 0.008 -53.726 0.144 -179.669

18.0 0.662 -139.509 5.673 90.341 0.004 -176.720 0.062 117.915

18.5 0.725 -148.466 4.646 55.355 0.003 -141.496 0.101 25.350

19.0 0.769 -155.321 3.720 20.982 0.007 -102.598 0.209 -8.918

19.5 0.807 -160.898 2.978 -12.195 0.002 -161.597 0.322 -25.318

20.0 0.845 -166.839 2.350 -46.408 0.006 111.398 0.433 -39.840

20.5 0.865 -171.744 1.839 -81.138 0.002 -135.188 0.545 -54.065

21.0 0.895 -176.622 1.404 -118.400 0.005 -152.650 0.647 -65.974

21.5 0.910 178.326 1.002 -159.002 0.005 76.670 0.747 -76.390

22.0 0.925 173.710 0.627 159.607 0.009 87.246 0.832 -89.068

22.5 0.923 169.561 0.341 122.484 0.005 -140.272 0.873 -99.611

23.0 0.931 165.925 0.173 92.298 0.010 115.686 0.903 -108.257

23.5 0.934 162.265 0.087 68.801 0.005 68.757 0.918 -116.042

24.0 0.940 159.140 0.043 52.012 0.007 102.110 0.933 -122.749

Freq GHz S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang

27.0 0.062 -129.237 0.551 90.459 0.010 177.923 0.116 160.920

27.5 0.077 -125.081 0.649 76.292 0.005 -126.794 0.113 141.866

28.0 0.089 -124.663 0.761 61.180 0.007 171.615 0.114 139.036

28.5 0.106 -125.311 0.902 45.683 0.007 -17.647 0.107 126.936

29.0 0.117 -130.964 1.065 29.516 0.017 67.959 0.070 111.208

29.5 0.128 -130.821 1.249 12.396 0.006 -1.088 0.062 103.935

30.0 0.143 -136.975 1.476 -4.753 0.009 -8.184 0.049 96.472

30.5 0.149 -142.520 1.751 -22.671 0.009 -29.238 0.039 86.803

31.0 0.154 -145.023 2.077 -41.829 0.012 61.068 0.036 90.848

31.5 0.163 -149.449 2.479 -61.162 0.022 -38.946 0.022 90.737

32.0 0.157 -158.027 3.009 -81.541 0.009 -39.383 0.042 68.986

32.5 0.156 -156.492 3.673 -104.231 0.010 -36.304 0.076 44.451

33.0 0.175 -166.626 4.510 -129.040 0.008 -38.664 0.097 24.045

33.5 0.158 -169.736 5.423 -157.652 0.005 -73.290 0.166 -7.068

34.0 0.171 -172.923 6.199 171.300 0.009 170.415 0.206 -33.959

34.5 0.170 -179.975 6.789 138.762 0.007 162.191 0.287 -57.177

35.0 0.163 170.699 6.843 104.802 0.005 -44.847 0.285 -88.319

35.5 0.133 159.436 6.597 72.388 0.002 -169.966 0.288 -114.610

36.0 0.099 160.157 5.923 41.110 0.002 -152.664 0.200 -131.942

36.5 0.096 176.977 5.214 11.642 0.019 97.367 0.148 -151.591

37.0 0.097 174.694 4.457 -14.876 0.007 -64.029 0.135 -143.436

37.5 0.098 173.890 3.794 -39.019 0.013 90.975 0.101 -140.993

38.0 0.103 170.171 3.254 -62.351 0.001 -124.170 0.109 -124.125

38.5 0.091 163.837 2.792 -84.302 0.005 53.455 0.104 -119.409

39.0 0.080 159.494 2.428 -105.377 0.016 25.244 0.108 -120.721

39.5 0.053 165.906 2.147 -125.734 0.013 15.571 0.127 -126.500

40.0 0.050 -166.535 1.912 -146.866 0.015 -40.561 0.116 -140.360

40.5 0.056 -156.522 1.704 -167.600 0.017 117.350 0.145 -129.641

41.0 0.084 -150.528 1.553 171.997 0.019 73.426 0.146 -138.203

41.5 0.106 -158.190 1.443 150.600 0.005 -23.626 0.184 -133.685

42.0 0.121 -168.906 1.381 127.874 0.008 72.289 0.201 -139.224

42.5 0.133 169.169 1.348 100.131 0.006 126.788 0.188 -141.730

43.0 0.105 162.178 1.254 66.104 0.023 165.530 0.197 -136.312











806 µm

Die Size and Bond Pad Locations (Not to Scale)

2650 µm

825 µm

2598 µm

2700 µm

X = 2700 25 µm Y =2650 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm

Biasing/De-Biasing Details:

APN236 must be biased the top and bottom of the die.

Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V

b. Know your devices’ breakdown voltages

c. Use a power supply with both voltage and current limit.

d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to

your test fixture.

i. Apply negative gate voltage (-5 V) to ensure that all devices are off

ii. Ramp up drain bias to ~10 V

iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating

current is achieved

iv. Ramp up drain to operating bias

v. Gradually increase gate bias voltage while monitoring drain current until the operating current

is achieved

e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):

i. Gradually decrease drain bias to 0 V.

ii. Gradually decrease gate bias to 0 V.

iii. Turn off supply voltages

f. Repeat de-bias procedure for each amplifier stage

Page 6

406 µm

RFIN

GND

GND

RFOUT

GND

GND

GN

D

GN

D

VD

1A

VG

1A

VD

2A

VG

2A

GN

D

GN

D

GN

D

GN

D

VD

1

VG

1

VD

2

VG

2

GN

D

GN

D

1206 µm

1806 µm

806 µm 406 µm

1206 µm

1806 µm









RFIN

GND

GND

RFOUT

GND

GND

GN

D

GN

D

VD

1A

VG

1A

VD

2A

VG

2A

GN

D

GN

D

GN

D

GN

D

VD

1

VG

1

VD

2

VG

2

GN

D

GN

D

Recommended Assembly Notes

1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils

from the amplifier.

2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.

3. Part must be biased from both sides as indicated.

4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device

is to be used, do NOT use the 0.1uF , 50V Capacitors.

Mounting Processes

Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be

mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of

AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum

recommended temp during die attach is 320oC for 30 seconds.

Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the

pick up tool.

CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN

CHIPS.

Suggested Bonding Arrangement

RF

Output

Substrate

RF

Input

Substrate

= 100 pF, 15V (Shunt)

= 10 Ohms, 30V (Series)

= 0.01uF, 15V (Shunt)

PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,

ASSEMBLING OR BIASING THESE MMICS!

= 0.1uF, 15V (Shunt)

= 100 pF, 50V (Shunt)

= 0.01uF, 50V (Shunt)

= 0.1uF, 50V (Shunt) [4]

Page 7

Approved for Public Release: Northrop Grumman Case 15-0877, 05/01/15

VG2

VG1

VD1 [4]

[4]

VD2

VG2a

VG1a

VD1a

[4]

VD2a

[4]

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Advance Datasheet Revision: April 2015 - Northrop Grumman©2015 Northrop Grumman Systems Corporation...

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