Advances in MaterialsProblem Solving With the
Electron Microscope
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Cambridge University Press978-1-107-41335-1 - Materials Research Society Symposium Proceedings: Volume 589:Advances in Materials Problem Solving with the Electron MicroscopeEditors: Jim Bentley, Charles Allen, Uli Dahmen and Ivan PetrovFrontmatterMore information
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Cambridge University Press978-1-107-41335-1 - Materials Research Society Symposium Proceedings: Volume 589:Advances in Materials Problem Solving with the Electron MicroscopeEditors: Jim Bentley, Charles Allen, Uli Dahmen and Ivan PetrovFrontmatterMore information
MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 589
Advances in MaterialsProblem Solving With the
Electron Microscope
Symposium held November 30-December 3, 1999, Boston, Massachusetts, U.S.A.
EDITORS:
Jim BentleyOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.
Charles AllenArgonne National Laboratory
Argonne, Illinois, U.S.A.
Uli DahmenLawrence Berkeley National Laboratory
Berkeley, California, U.S.A.
Ivan PetrovUniversity of Illinois
Urbana, Illinois, U.S.A.
IMIRIS1Materials Research Society
Warrendale, Pennsylvania
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Cambridge University Press978-1-107-41335-1 - Materials Research Society Symposium Proceedings: Volume 589:Advances in Materials Problem Solving with the Electron MicroscopeEditors: Jim Bentley, Charles Allen, Uli Dahmen and Ivan PetrovFrontmatterMore information
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CONTENTS
Preface xiii
Materials Research Society Symposium Proceedings xiv
MAGNETIC MA TERIALS
*Microstructural Characterization of Longitudinal MagneticRecording Media 3
Robert Sinclair, Dong-Won Park, Claus Habermeier, and Kai Ma
Electron Holography of Nanostructured Magnetic Materials 13R.E. Dunin-Borkowski, B. Kardynal, M.R. McCartney,M.R. Scheinfein, and David J. Smith
Flux Mapping and Magnetic Behavior of Grain Boundaries in Nd-Fe-BMagnets 19
V.V. Volkov and Yimei Zhu
CRYSTALLOGRAPHY AND DEFECTS
*LEEM Investigations of bcc Metals Grown Heteroepitaxially onSapphire 27
W. Swiech, M. Ondrejcek, R.S. Appleton, C.S. Durfee,M. Mundschau, and C.P. Flynn
^Electron Backscatter Diffraction: A Powerful Tool for PhaseIdentification in the SEM 39
J.R. Michael and R.P. Goehner
Measuring the Thin Film Strain Tensor Near Aluminum GrainBoundaries via a New Image Processing Approach to CBEDHOLZ Patterns 51
J. Inoue, A.F. Schwartzman, and L.B. Freund
*Controlled Environment Transmission Electron Microscopy 57I.M. Robertson
* Invited Paper
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Analysis of the Atomic Scale Defect Chemistry in OxygenDeficient Materials by STEM 69
Y. Ito, S. Stemmer, R.F. Klie, N.D. Browning, A. Sane,and T.J. Mazanec
Energy Dispersive X-ray Spectrometry With the Transition EdgeSensor Microcalorimeter: A Revolutionary Advanced in MaterialsMicroanalysis 75
Dale Newbury, David Wollman, Kent Irwin, Gene Hilton,and John Martinis
Surface Sensitivity Effects With Local Probe Scanning Auger-ScanningElectron Microscopy 81
D.T.L. van Agterveld, G. Palasantzas, and J.Th.M. De Hosson
X-ray Elemental Mapping of Multi-Component Steels 87Adam J. Papworth and David B. Williams
High Sensitivity Convergent Beam Electron Diffraction for theDetermination of the Tetragonal Distortion of Epitaxial Films 93
C. Schuer, M. Leicht, T. Marek, and H.P. Strunk
Determination of Coherency Strain Fields Around CoherentParticles in Ni-Al Alloys by HREM and CBED 99
H.A. Calderon, L. Calzado, C. Kisielowski, C.Y. Wang, andR. Kilaas
An Electron Microscope Study of Diffusion Assisted DislocationProcesses in Inter metallic Gamma TiAl 105
F. Appel, U. Lorenz, and M. Oehring
Specimen Current Imaging of Delamination in Ceramic Filmson Metal Substrates in the SEM I l l
S. Rangarajan and A.H. King
In Situ Observation of Melting and Solidification 117H. Saka, S. Arai, S. Muto, H. Miyai, and S. Tsukimoto
Site Occupancy Determination by ALCHEMI of Nb and Cr inY-TiAl and Their Effects on the a to y Massive Phase Transformation 123
T.M. Miller, L. Wang, W.H. Hofmeister, J.E. Wittig, andI.M. Anderson
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Electron Channeling X-ray Microanalysis for Cation Configurationin Irradiated Magnesium Aluminate Spinel 129
S. Matsumura, T. Soeda, NJ. Zaluzec, and C. Kinoshita
In Situ Study of Zirconia Stabilization by Anion Exchange(N for O) Using High-Temperature, Controlled AtmosphereElectron Diffraction 135
Renu Sharma, Eberhard Schweda, and Dirk Naedele
Environmental Scanning Electron Microscopy as a Tool toStudy Shrinkage Microcracks in Cement-Based Materials 141
J. Bisschop and J.G.M. van Mier
Microcharacterization of Heterogeneous Specimens ContainingTire Dust 147
Marina Camatini, Gaia M. Corbetta, Giovanni F. Crosta,Tigran Dolukhanyan, Giampaolo Giuliani, and Changmo Sung
MICROELECTRONIC MA TERIALS
Experimental Methods and Data Analysis for Fluctuation Microscopy 155P.M. Voyles, M.M.J. Treacy, J.M. Gibson, H-C. Jin, andJ.R. Abelson
Microdiffraction, EDS, and HREM Investigation for Phase IdentificationWith the Electron Microscope 161
P. Ruterana and A. Redjaimia
Energy-Loss Filtered Imaging of Segregation-Induced InterfaceBroadening in SiGe/Si p-Channel MOSFET Device Structures 167
D.J. Norris, A.G. Cullis, T.J. Grasby, and E.H.C. Parker
Atomic-Scale Imaging of Dopant Atom Distributions Within
Silicon 5-Doped Layers 173R. Vanfleet, D.A. Muller, H.J. Gossmann, P.H. Citrin, andJ. Silcox
In Situ Annealing Transmission Electron Microscopy Study ofPd/Ge/Pd/GaAs Interfacial Reactions 179
F. Radulescu, J.M. McCarthy, and E.A. Stach
Incoherent High-Resolution Z-Contrast Imaging of Silicon andGallium Arsenide Using HAADF-STEM 185
Y. Kotaka, T. Yamazaki, Y. Kikuchi, and K. Watanabe
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The Atomic Structure of Mosaic Grain Boundary Dislocations inGaN Epitaxial Layers 191
V. Potin, G. Nouet, P. Ruterana, and R.C. Pond
Interface Structure and Zn Diffusion in the CdTe/ZnTe/Si SystemGrown by MBE 197
S-C.Y. Tsen, David J. Smith, P.A. Crozier, S. Rujirawat,G. Brill, and S. Sivananthan
Relationship Between Structure and Luminescent Properties ofEpitaxial Grown Y2O3:Eu Thin Films on LaAlO3 Substrates 203
H-J. Gao, G. Duscher, X.D. Fan, S.J. Pennycook, D. Kumar,K.G. Cho, P.H. Holloway, and R.K. Singh
PARTIALLY ORDERED ANDNANOPHASE MATERIALS
Imaging Heterophase Molecular Materials in the Environmental SEM 211B.L. Thiel, A.M. Donald, D.J. Stokes, I.C. Bache, andN. Stelmashenko
A New Approach Towards Property Nanomeasurements Using In Situ TEM 217Z.L. Wang, P. Poncharal, W.A. de Heer, and R.P. Gao
Electron Microscopy of Single Molecules 223D.E. Luzzi and B.W. Smith
Nanocrystal Thickness Information From Z-STEM: 3-D Imaging inOne Shot 229
A.V. Kadavanich, T. Kippeny, M. Erwin, S.J. Rosenthal, andS.J. Pennycook
Epitaxy and Atomic Structure Determination of Au/TiC>2 Interfacesby Combined EBSD and HRTEM 235
F. Cosandey and P. Stadelmann
Theoretical Explanation of Pt Trimers Observed by Z-Contrast STEM 241Karl Sohlberg, Sokrates T. Pantelides, and Stephen J. Pennycook
Ion-Implanted Amorphous Silicon Studied by Variable Coherence TEM 247J-Y. Cheng, J.M. Gibson, P.M. Voyles, M.M.J. Treacy, andD.C. Jacobson
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Analytical High-Resolution TEM Study on Au/TiO2 Catalysts 253T. Akita, K. Tanaka, S. Tsubota, and M. Haruta
High-Resolution Scanning Electron Microscopy and Microanalysisof Supported Metal Catalysts 259
Jingyue Liu
On-Particle EDS Analysis of Bimetallic, Carbon-Supported Catalysts 265Deborah L. Boxall, Edward A. Kenik, and Charles M. Lukehart
INTERFACES IN METALSAND CERAMICS
Structure Refinement of S-Phase Precipitates in Al-Cu-Mg Alloysby Quantitative HRTEM 273
R. Kilaas, V. Radmilovic, and U. Dahmen
^Quantitative Mapping of Concentrations and Bonding States byEnergy Filtering TEM 279
J. Mayer and J.M. Plitzko
Combined HRTEM and EFTEM Study of Precipitates in Tungstenand Chromium-Containing TiB2 289
W. Mader, B. Freitag, K. Kelm, R. Telle, and C. Schmalzried
High Spatial Resolution X-ray Microanalysis of Radiation-InducedSegregation in Proton-Irradiated Stainless Steels 295
E.A. Kenik, J.T. Busby, and G.S. Was
Investigation of Copper Segregation to the Z5(310)/[001] SymmetricTilt Grain Boundary in Aluminum 301
Jiirgen M. Plitzko, Geoffrey H. Campbell, Wayne E. King, andStephen M. Foiles
STEM Analysis of the Segregation of Bi to Z19a Grain Boundaries in Cu 307W. Sigle, L-S. Chang, W. Gust, and M. Ruhle
^Investigating Atomic Scale Phenomena at Materials Interfaces WithCorrelated Techniques in STEM/TEM 311
N.D. Browning, A.W. Nicholls, E.M. James, I. Arslan, Y. Xin,K. Kishida, and S. Stemmer
•Invited Paper
IX
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Atomic Scale Analysis of Cubic Zirconia Grain Boundaries 323E.C. Dickey, X. Fan, M. Yong, S.B. Sinnott, and S.J. Pennycook
SEM/EDX Spectrum Imaging and Statistical Analysis of aMetal/Ceramic Braze 329
Paul G. Kotula, Michael R. Keenan, and Ian M. Anderson
Characterization of the Interface Between Lanthanum Hexa-Aluminateand Sapphire by Exit Wave Reconstruction 335
B. Wessler, A. Steinecker, and W. Mader
Atomic and Electronic Structure Analysis of £=3,9 and 27 Boundary,
and Multiple Junction in P-SiC 341K. Tanaka and M. Kohyama
Electronic Effects on Grain Boundary Structure in bcc Metals 347Geoffrey H. Campbell, Wayne E. King, James Belak,John A. Moriarty, and Stephen M. Foiles
Structural Study of a [100] 45° Twist Plus 7.5° Tilt Grain Boundary inAluminium by HREM 353
M. Shamsuzzoha, P.A. Deymier, and David J. Smith
Atomic Structure of Gold and Copper Boundaries 359C.J.D. Hetherington
Formation of A1N Films on Ti/TiN Arc-Layer Interface With Al-0.5%CuInterconnects Evaluated by XPS and Energy-Filtered-TEM 365
J. Gazda, J. Zhao, P. Smith, and R.A. White
Effects of "As Deposited" and Alloying Temperatures on theDistribution of Cu in 0.5%Cu-Al Films 371
P.L. Smith and J. Gazda
Interfacial Interaction Between Cr Thin Films and Oxide Glasses 377N. Jiang and J. Silcox
Characterization of Intergranular Phases in Doped ZirconiaPolycrystals 383
N.D. Evans, P.H. Imamura, J. Bentley, and M.L. Mecartney
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The Effect of Different Oxidizing Atmospheres on the InitialKinetics of Copper Oxidation as Studied In Situ UHV-TEM 389
Mridula D. Bharadwaj, Anu Gupta, J. Murray Gibson,and Judith C.Yang
Bonding in Ion-Implanted Carbon Films Characterized by TEMSpectrum Lines and Energy-Filtered Imaging 395
J. Bentley, K.C. Walter, and N.D. Evans
Author Index 401
Subject Index 403
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PREFACE
Symposium Q, "Advances in Materials Problem Solving With the Electron Microscope,"was held November 30-December 3 at the 1999 MRS Fall Meeting in Boston, Massachusetts.More than 100 papers were presented in ten sessions including four poster sessions. Thesessions were well attended and the discussions were lively.
The symposium was motivated by the remarkable advances that continue to be made inelectron microscope instrumentation and techniques for applications to materials science.Characterization problems can now be tackled that were beyond reach just a few years ago. Theadvances include quantitative high resolution imaging, atomic-resolution Z-contrast imaging,elemental mapping by energy-filtered TEM or spectrum imaging, atomic resolution EELS forcomposition and bonding, quantitative CBED, site occupancy determination by ALCHEMI,electron holography, EBSP in the SEM for phase identification and orientation imagingmicroscopy, low-voltage microanalysis of bulk specimens, and in-situ experiments of dynamicphenomena. The aim of the symposium was to emphasize how these recent developments inelectron microscopy are being used to solve materials problems.
For the most part, the sessions were organized to feature different groups of materials ormicrostructural components rather than electron microscope techniques or instrumentation.Attendees heard discussions of low-energy electron microscopy of surfaces, crystallography,defects, specimen preparation, and interfaces in metals and ceramics. Technologicalapplications ranged over magnetic materials, microelectronic materials, partially ordered andnanophase materials, polymers, ceramics, metallic alloys, concrete, biomaterials, and glasses.
The symposium organizers are grateful to the following for assisting in chairing sessions:I.M. Anderson, N.D. Browning, V.P. Dravid, C.P. Flynn, RJ. Gottschall, R. Hull, K.M.Krishnan, M.R. Libera, J. Mayer, J.R. Michael, D.J. Miller, I.M. Robertson, M. Sarikaya, R.Sinclair, D.J. Smith, A. Thust, R.D. Twesten, G.C. Weatherly, and Y. Zhu. Many of thesecolleagues also presented invited talks.
Symposium support was provided by Argonne National Laboratory, Lawrence BerkeleyNational Laboratory, Oak Ridge National Laboratory, the University of Illinois, JEOL USA,Inc. and Fischione Instruments, Inc. The symposium organizers and the Materials ResearchSociety gratefully acknowledge their support. Finally, special thanks go to the helpful MRSstaff.
Jim BentleyCharles AllenUli DahmenIvan Petrov
June 2001
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 557— Amorphous and Heterogeneous Silicon Thin Films: Fundamentals toDevices—1999, H.M. Branz, R.W. Collins, H. Okamoto, S. Guha, R. Schropp,1999, ISBN: 1-55899-464-5
Volume 558— Flat-Panel Displays and Sensors—Principles, Materials and Processes, F.R. Libsch,B. Chalamala, R. Friend, T. Jackson, H. Ohshima, 2000, ISBN: 1-55899-465-3
Volume 559— Liquid Crystal Materials and Devices, T.J. Bunning, S.H. Chen, L.C. Chien,T. Kajiyama, N. Koide, S-C.A. Lien, 1999, ISBN: 1-55899-466-1
Volume 560— Luminescent Materials, J. McKittrick, B. DiBartolo, K. Mishra, 1999,ISBN: 1-55899-467-X
Volume 561— Organic Nonlinear Optical Materials and Devices, B. Kippelen, H.S. Lackritz,R.O. Claus, 1999, ISBN: 1-55899-468-8
Volume 562— Polycrystalline Metal and Magnetic Thin Films, D.E. Laughlin, K.P. Rodbell,O. Thomas, B. Zhang, 1999, ISBN: 1-55899-469-6
Volume 563— Materials Reliability in Microelectronics IX, C.A. Volkert, A.H. Verbruggen,D.D. Brown, 1999, ISBN: 1-55899-470-X
Volume 564— Advanced Interconnects and Contacts, D.C. Edelstein, T. Kikkawa, M.C. Oztttrk,K-N. Tu, E J. Weitzman, 1999, ISBN: 1-55899-471-8
Volume 565— Low-Dielectric Constant Materials V, J. Hummel, K. Endo, W.W. Lee, M. Mills,S-Q. Wang, 1999, ISBN: 1-55899-472-6
Volume 566— Chemical-Mechanical Polishing—Fundamentals and Challenges, S.V. Babu,S. Danyluk, M. Krishnan, M. Tsujimura, 2000, ISBN: 1-55899-473-4
Volume 567— Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, H.R. Huff,C.A. Richter, M.L. Green, G. Lucovsky, T. Hattori, 1999, ISBN: 1-55899-474-2
Volume 568— Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions,H-J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka, 1999,ISBN: 1-55899-475-0
Volume 569— In Situ Process Diagnostics and Modelling, O. Auciello, A.R. Krauss, E.A. Irene,J.A. Schultz, 1999, ISBN: 1-55899-476-9
Volume 570— Epitaxial Growth, A-L. Barabasi, M. Krishnamurthy, F. Liu, T.P. Pearsall, 1999,ISBN: 1-55899-477-7
Volume 571— Semiconductor Quantum Dots, S.C. Moss, D. Ila, H.W.H. Lee, D.J. Norris, 2000,ISBN: 1-55899-478-5
Volume 572— Wide-Bandgap Semiconductors for High-Power, High-Frequency andHigh-Temperature Applications—1999, S.C. Binari, A.A. Burk, M.R. Melloch,C. Nguyen, 1999, ISBN: 1-55899-479-3
Volume 573— Compound Semiconductor Surface Passivation and Novel Device Processing,H. Hasegawa, M. Hong, Z.H. Lu, S.J. Pearton, 1999, ISBN: 1-55899-480-7
Volume 574— Multicomponent Oxide Films for Electronics, M.E. Hawley, D.H.A. Blank, C-B. Eom,D.G. Schlom, S.K. Streiffer, 1999, ISBN: 1-55899-481-5
Volume 575— New Materials for Batteries and Fuel Cells, D.H. Doughty, L.F. Nazar, M. Arakawa,H-P. Brack, K. Naoi, 2000, ISBN: 1-55899-482-3
Volume 576— Organic/Inorganic Hybrid Materials II, L.C. Klein, L.F. Francis, M.R. DeGuire,J.E. Mark, 1999, ISBN: 1-55899-483-1
Volume 577— Advanced Hard and Soft Magnetic Materials, M. Coey, L.H. Lewis, B-M. Ma,T. Schrefl, L. Schultz, J. Fidler, V.G. Harris, R. Hasegawa, A. Inoue, M.E. McHenry,1999, ISBN: 1-55899-485-8
Volume 578— Multiscale Phenomena in Materials—Experiments and Modeling, D.H. Lassila,I.M. Robertson, R. Phillips, B. Devincre, 2000, ISBN: 1-55899-486-6
Volume 579— The Optical Properties of Materials, J.R. Chelikowsky, S.G. Louie, G. Martinez,E.L. Shirley, 2000, ISBN: 1-55899-487-4
Volume 580— Nucleation and Growth Processes in Materials, A. Gonis, P.E.A. Turchi, A.J. Ardell,2000, ISBN: 1-55899-488-2
Volume 581— Nanophase and Nanocomposite Materials III, S. Komarneni, J.C. Parker, H. Hahn,2000, ISBN: 1-55899-489-0
Volume 582— Molecular Electronics, S.T. Pantelides, M.A. Reed, J. Murday, A. Aviram, 2000,ISBN: 1-55899-490-4
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Volume 583— Self-Organized Processes in Semiconductor Alloys, A. Mascarenhas, B. Joyce,T. Suzuki, D. Follstaedt, 2000, ISBN: 1-55899-491-2
Volume 584— Materials Issues and Modeling for Device Manofabrication, L. Merhari, L.T. Wille,K. Qonsalves, M.F. Qyure, S. Matsui, L.J. Whitman, 2000, ISBN: 1-55899-492-0
Volume 585— Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth andProcessing, S. Moss, E.H. Chason, B.H. Cooper, T. Diaz de la Rubia, J.M.E. Harper,R. Murti, 2000, ISBN: 1-55899-493-9
Volume 586— Interfacial Engineering for Optimized Properties II, C.B. Carter, E.L. Hall,C.L. Briant, S. Nutt, 2000, ISBN: 1-55899-494-7
Volume 587— Substrate Engineering—Paving the Way to Epitaxy, D.P. Norton, D.Q. Schlom,N. Newman, D.H. Matthiesen, 2000, ISBN: 1-55899-495-5
Volume 588— Optical Microstructural Characterization of Semiconductors, J. Piqueras,T. Sekiguchi, M.S. Unlu, N.M. Kalkhoran, 2000, ISBN: 1-55899-496-3
Volume 589— Advances in Materials Problem Solving with the Electron Microscope, J. Bentley,U. Dahmen, C. Allen, I. Petrov, 2000, ISBN: 1-55899-497-1
Volume 590— Applications of Synchrotron Radiation Techniques to Materials Science V,S.R. Stock, D.L. Perry, S.M. Mini, 2000, ISBN: 1-55899-498-X
Volume 591— Nondestructive Methods for Materials Characterization, T. Matikas, N. Meyendorf,Q. Baaklini, R. Gilmore, 2000, ISBN: 1-55899-499-8
Volume 592— Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon andRelated Structures, H.J. von Bardeleben, D.A. Buchanan, A.H. Edwards, T. Hattori,2000, ISBN: 1-55899-500-5
Volume 593— Amorphous and Nanostructured Carbon, J. Robertson, J.P. Sullivan, O. Zhou,T.B. Allen, B.F. Coll, 2000, ISBN: 1-55899-501-3
Volume 594— Thin Films—Stresses and Mechanical Properties VIII, R. Vinci, O. Kraft, N. Moody,P. Besser, E. Shaffer II, 2000, ISBN: 1-55899-502-1
Volume 595— GaN and Related Alloys—1999, R. Feenstra, T. Myers, M.S. Shur, H. Amano, 2000,ISBN: 1-55899-503-X
Volume 596— Ferroelectric Thin Films VIII, R.W. Schwartz, S.R. Summerfelt, P.C. Mclntyre,Y. Miyasaka, D. Wouters, 2000, ISBN: 1-55899-504-8
Volume 597— Thin Films for Optical Waveguide Devices and Materials for Optical Limiting,K. Nashimoto, B.W. Wessels, J. Shmulovich, A.K-Y. Jen, K. Lewis, R. Pachter,R. Sutherland, J. Perry, 2000, ISBN: 1-55899-505-6
Volume 598— Electrical, Optical, and Magnetic Properties of Organic Solid-StateMaterials V, S.P. Ermer, J.R. Reynolds, J.W. Perry, A.K-Y. Jen, Z. Bao, 2000,ISBN: 1-55899-506-4
Volume 599— Mineralization in Natural and Synthetic Biomaterials, P. Li, P. Calvert, R.J. Levy,T. Kokubo, C.R. Scheid, 2000, ISBN: 1-55899-507-2
Volume 600— Electroactive Polymers, Q.M. Zhang, T. Furukawa, Y. Bar-Cohen, J. Scheinbeim,2000, ISBN: 1-55899-508-0
Volume 601— Superplasticity—Current Status and Future Potential, P.B. Berbon, M.Z. Berbon,T. Sakuma, T.G. Langdon, 2000, ISBN: 1-55899-509-9
Volume 602— Magnetoresistive Oxides and Related Materials, M. Rzchowski, M. Kawasaki,A.J. Millis, M. Rajeswari, S. von Molnar, 2000, ISBN: 1-55899-510-2
Volume 603— Materials Issues for Tunable RF and Microwave Devices, Q. Jia, F.A. Miranda,D.E. Oates, X. Xi, 2000, ISBN: 1-55899-511-0
Volume 604— Materials for Smart Systems HI, M. Wun-Fogle, K. Uchino, Y. Ito, R. Gotthardt,2000, ISBN: 1-55899-512-9
Volume 605— Materials Science of Microelectromechanical Systems (MEMS) Devices II,M.P. deBoer, A.H. Heuer, S.J. Jacobs, E. Peeters, 2000, ISBN: 1-55899-513-7
Volume 606— Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, A.C. Jones,J. Veteran, S. Kaushal, D. Mullin, R. Cooper, 2000, ISBN: 1-55899-514-5
Volume 607— Infrared Applications of Semiconductors III, B.J.H. Stadler, M.O. Manasreh,I. Ferguson, Y-H. Zhang, 2000, ISBN: 1-55899-515-3
Volume 608— Scientific Basis for Nuclear Waste Management XXIII, R.W. Smith, D.W. Shoesmith,2000, ISBN: 1-55899-516-1
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Cambridge University Press978-1-107-41335-1 - Materials Research Society Symposium Proceedings: Volume 589:Advances in Materials Problem Solving with the Electron MicroscopeEditors: Jim Bentley, Charles Allen, Uli Dahmen and Ivan PetrovFrontmatterMore information