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Anti-Site Defects in p-Type Co2ZnO4: Better than Perfect

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Scientific Achievement The Center for Inverse Design (CID) demonstrates that intrinsic anti-site defects actually improve electrical properties of Doping Type II spinels, in agreement with prior CID prediction. Significance and Impact This work confirms a fundamental hole-generating process in Co 2 ZnO 4 , thereby enabling increased p-type conductivity via intentional non-equilibrium growth. Research Details p-type (hole-carrier) transparent conducting oxides are highly desired for photovoltaics and displays. However, to date, no high-performance materials are known. The CID previously predicted via theory that anti-site defects should be a net hole producer for a special class of III-II Normal spinels typified by Co 2 ZnO 4 and denoted Doping Type II. Resonant (variable beam energy) elastic X-ray diffraction (REXD) measurements done on as-deposited and annealed epitaxial Co 2 ZnO 4 films confirm this prediction. For Inverse spinel Co 2 NiO 4 , spin-dependent electronic structure calculations predict Co 2 NiO 4 to be a spin-polarized semi-metal. Consequentially, for Co 2 NiO 4 , decreasing defects through annealing is predicted to increase conductivity—just the opposite of the predicted effect for Doping Type II Co 2 ZnO 4 . This is also confirmed by REXD measurements. These new insights into the role of anti-site disorder underpin a new Design Principle whereby non-equilibrium growth is used to create beneficial disorder. Anti-Site Defects in p-Type Co 2 ZnO 4 : Better than Perfect P. Ndione, Y. Shi, V. Stevanovic, A. Zakutayev, S. Lany, P. Parilla, J. Perkins, J. Berry, D. Ginley, M. Toney, Advanced Functional Materials, submitted March 2013. Normal Spinel Co 2 ZnO 4 Perfect Structure with Anti-Site Defect Degree of inversion λ 0.0 0.67 0.5 1.0 1.5 Configura onal Entropy/k B 1.0 2.0 INVERSE As deposited T * = 2487 K As deposited T * = 2088 K Annealed T * = 776 K Annealed T * = 646 K 30 60 Co 2 NiO 4 Co 2 ZnO 4 Conduc vity (S/cm) NORMAL 0.22 0.42 0.86 (Top) Perfect and anti-site defect structures for normal spinel Co 2 ZnO 4 . (Bottom) Electrical conductivity in Normal spinel Co 2 ZnO 4 and Inverse spinel Co 2 NiO 4 .
Transcript
Page 1: Anti-Site Defects in p-Type Co2ZnO4: Better than Perfect

Scientific Achievement The Center for Inverse Design (CID) demonstrates that intrinsic anti-site defects actually improve electrical properties of Doping Type II spinels, in agreement with prior CID prediction.

Significance and Impact This work confirms a fundamental hole-generating process in Co2ZnO4, thereby enabling increased p-type conductivity via intentional non-equilibrium growth.

Research Details • p-type (hole-carrier) transparent conducting oxides are highly desired for photovoltaics

and displays. However, to date, no high-performance materials are known.

• The CID previously predicted via theory that anti-site defects should be a net hole producer for a special class of III-II Normal spinels typified by Co2ZnO4 and denoted Doping Type II.

• Resonant (variable beam energy) elastic X-ray diffraction (REXD) measurements done on as-deposited and annealed epitaxial Co2ZnO4 films confirm this prediction.

• For Inverse spinel Co2NiO4, spin-dependent electronic structure calculations predict Co2NiO4 to be a spin-polarized semi-metal.

• Consequentially, for Co2NiO4, decreasing defects through annealing is predicted to increase conductivity—just the opposite of the predicted effect for Doping Type II Co2ZnO4. This is also confirmed by REXD measurements.

• These new insights into the role of anti-site disorder underpin a new Design Principle whereby non-equilibrium growth is used to create beneficial disorder.

Anti-Site Defects in p-Type Co2ZnO4: Better than Perfect

P. Ndione, Y. Shi, V. Stevanovic, A. Zakutayev, S. Lany, P. Parilla, J. Perkins, J. Berry, D. Ginley, M. Toney, Advanced Functional Materials, submitted March 2013.

Normal Spinel Co2ZnO4 Perfect Structure with Anti-Site Defect

Degreeofinversionλ

0.0 0.67

0.5

1.0

1.5

Configura

onalEntropy/k B

1.0

2.0

INVERSE

Asdeposited

T*=2487K

Asdep

osited

T*=2088K

Annealed

T*=776K

Annealed

T*=646K

30

60

Co2NiO4Co2ZnO4

Conducvity(S/cm

)

NORMAL

0.22 0.42 0.86

(Top) Perfect and anti-site defect structures for normal spinel Co2ZnO4. (Bottom) Electrical conductivity in Normal spinel Co2ZnO4 and Inverse spinel Co2NiO4.

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