Application Note 4 NJG1133MD7
1/19
1.9GHz / 900MHz /1.8GHz Bands Application
4-1 Summary
The characterisitics of Band1, 8, 3 have evaluated as follows. The evaluation circuit structure and
measured data are reviewed.
4-2-1 Measurement data of assembled evaluation board
DC Characteristics
General conditions : VDD=2.85V, Ta=+25oC
LNA Supply Voltage VDD 2.85 V
Control Voltage 1 (High) VCTL1(H) 1.8 V
Control Voltage 1 (Low) VCTL1(L) 0 V
Control Voltage 2 (High) VCTL2(H) 1.8 V
Control Voltage 2 (Low) VCTL2(L) 0 V
Control Voltage 3 (High) VCTL3(H) 1.8 V
Control Voltage 3 (Low) VCTL3(L) 0 V
LNA Operating Current 1(1.9GHz Band High Gain Mode)
LNA Operating Current 2(900MHz Band High Gain Mode)LNA Operating Current 3
(1.8GHz Band High Gain Mode)LNA Operating Current 4(Low Gain Mode)
Control Current 1 ICTL1 VCTL1=1.8V 5.5 uA
Control Current 2 ICTL2 VCTL2=1.8V 5.6 uA
Control Current 3 ICTL3 VCTL3=1.8V 5.6 uA
VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
VCTL3=0V
IDD1
IDD2
IDD3
IDD4
Parameter Symbol Condition
VCTL1=0V, VCTL2=0V, VCTL3=1.8V
Units
2.57 mA
Measurement
Data
34.5
2.51
mA
mA
uA
2.27
Application Note 4 NJG1133MD7
2/19
4-2-2 Measurement data of assembled evaluation board
RF Characteristics 1 (1.9GHz Band High Gain Mode)
Small Signal Gain 1Exclude Input&Output PCB, Connector
Losses (0.45dB)Gain 1 16.5 ~ 16.9 dB
Noise Figure 1Exclude PCB, Connector
Losses (0.09dB)NF 1 1.13 ~ 1.39 dB
Input Power 1dB
Compression 1P-1dB(IN)_1 -9.3 ~ -9.1 dBm
Input 3rd Order
Intercept Point 1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3_1 -1.3 ~ -0.9 dBm
RF IN VSWR 1 VSWRi_1 1.70 ~ 1.86 -
RF OUT VSWR 1 VSWRo_1 2.17 ~ 2.44 -
RF Characteristics 2 (1.9GHz Band Low Gain Mode)
Small Signal Gain 2Exclude Input&Output PCB, Connector
Losses (0.45dB)Gain 2 -3.9 ~ -3.6 dB
Noise Figure 2Exclude PCB, Connector
Losses (0.09dB)NF 2 3.8 ~ 4.4 dB
Input Power 1dB
Compression 2P-1dB(IN)_2 +15.2 ~ +15.7 dBm
Input 3rd Order
Intercept Point 2
f1=fRF, f2=fRF+100kHz,
Pin=-20dBmIIP3_2 +12.3 ~ +12.6 dBm
RF IN VSWR 2 VSWRi_2 1.09 ~ 1.27 -
RF OUT VSWR 2 VSWRo_2 1.41 ~ 1.57 -
UnitsParameter Condition SymbolMeasurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=1920~1980MHz,
Units
Ta=+25oC, Zs=Zl=50ohm, with application circuit
General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=1920~1980MHz,
Measurement
Data
Application Note 4 NJG1133MD7
3/19
4-2-3 Measurement data of assembled evaluation board
RF Characteristics 3 (900MHz Band High Gain Mode)
Small Signal Gain 3Exclude Input&Output PCB, Connector
Losses (0.22dB)Gain 3 16.1 ~ 16.2 dB
Noise Figure 3Exclude PCB, Connector
Losses (0.06dB)NF 3 1.20 ~ 1.30 dB
Input Power 1dB
Compression 3P-1dB(IN)_3 -7.8 ~ -7.3 dBm
Input 3rd Order
Intercept Point 3
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3_3 +0.6 ~ +1.3 dBm
RF IN VSWR 3 VSWRi_3 1.78 ~ 1.96 -
RF OUT VSWR 3 VSWRo_3 1.48 ~ 1.66 -
RF Characteristics 4 (900MHz Band Low Gain Mode)
Small Signal Gain 4Exclude Input&Output PCB, Connector
Losses (0.22dB)Gain 4 -4.0 ~ -3.9 dB
Noise Figure 4Exclude PCB, Connector
Losses (0.06dB)NF 4 2.7 ~ 4.9 dB
Input Power 1dB
Compression 4P-1dB(IN)_4 +17.6 ~ +18.0 dBm
Input 3rd Order
Intercept Point 4
f1=fRF, f2=fRF+100kHz,
Pin=-20dBmIIP3_4 +11.6 ~ +13.3 dBm
RF IN VSWR 4 VSWRi_4 1.75 ~ 1.81 -
RF OUT VSWR 4 VSWRo_4 2.72 ~ 2.81 -
General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=925~960MHz,
Units
Ta=+25oC, Zs=Zl=50ohm, with application circuit
General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=925~960MHz,
Measurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
UnitsParameter Condition SymbolMeasurement
Data
Application Note 4 NJG1133MD7
4/19
4-2-4 Measurement data of assembled evaluation board
RF Characteristics 5 (1.8GHz Band High Gain Mode)
Small Signal Gain 5Exclude Input&Output PCB, Connector
Losses (0.41dB)Gain 5 15.7 ~ 15.9 dB
Noise Figure 5Exclude PCB, Connector
Losses (0.10dB)NF 5 1.35 ~ 1.41 dB
Input Power 1dB
Compression 5P-1dB(IN)_5 -7.8 ~ -7.1 dBm
Input 3rd Order
Intercept Point 5
f1=fRF, f2=fRF+100kHz,
Pin=-30dBmIIP3_5 +1.0 ~ +1.8 dBm
RF IN VSWR 5 VSWRi_5 1.76 ~ 1.93 -
RF OUT VSWR 5 VSWRo_5 1.78 ~ 1.79 -
RF Characteristics 6 (1.8GHz Band Low Gain Mode)
Small Signal Gain 6Exclude Input&Output PCB, Connector
Losses (0.41dB)Gain 6 -4.0 ~ -3.9 dB
Noise Figure 6Exclude PCB, Connector
Losses (0.10dB)NF 6 3.9 ~ 4.7 dB
Input Power 1dB
Compression 6P-1dB(IN)_6 +17.4 ~ +17.7 dBm
Input 3rd Order
Intercept Point 6
f1=fRF, f2=fRF+100kHz,
Pin=-16dBmIIP3_6 +13.3 ~ +14.1 dBm
RF IN VSWR 6 VSWRi_6 1.67 ~ 1.72 -
RF OUT VSWR 6 VSWRo_6 2.14 ~ 2.24 -
RF Characteristics 7
Gain Dynamic Range1
(1.9GHz Band)
(High Gain S21)-(Low Gain S21),
f=1920~1950MHz,
VCTL1=0V, VCTL2=0V, VCTL3=0V or 1.8V
GDR_1 20.1 ~ 20.5 dB
Gain Dynamic Range2
(900MHz Band)
(High Gain S21)-(Low Gain S21),
f=925~960MHz,
VCTL1=1.8V, VCTL2=0V, VCTL3=0V or 1.8V
GDR_2 20.0 ~ 20.2 dB
Gain Dynamic Range3
(1.8GHz Band)
(High Gain S21)-(Low Gain S21),
f=1805~1880MHz,
VCTL1=0V, VCTL2=1.8V, VCTL3=0V or 1.8V
GDR_3 19.6 ~ 19.8 dB
General condition : VDD=2.85V, Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter Condition SymbolMeasurement
DataUnits
General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1805~1880MHz,
Units
Ta=+25oC, Zs=Zl=50ohm, with application circuit
General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1805~1880MHz,
Measurement
Data
Ta=+25oC, Zs=Zl=50ohm, with application circuit
Parameter SymbolCondition
UnitsParameter Condition SymbolMeasurement
Data
Application Note 4 NJG1133MD7
5/19
4-3 Pin configuration
4-4 Truth table
VCTL terminal function
VCTL1, VCTL2:Band Select (1.9GHz Band or 900MHz Band or 1.8GHz Band)
VCTL3:RX ATT Select (High Gain mode or Low Gain mode)
(Top View)
13
RFIN2
RFIN1 RFOUT2
GND
VCTL2
VCTL3
VCTL1
Logic Circuit
RFOUT3
RFIN3
RFOUT1
1.8GHz Band
Bias Circuit
Bias Circuit
Bias Circuit
GND
1.9GHz Band
900MHz Band
6
5
7
14
12
13
GND 2 4 1 3
10 8 11 9 GND GND
“L”=0~0.3V、“H”=1.36~1.9V
VCTL1 VCTL2 VCTL3
(Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass
L L L OFF ON OFF ON OFF ONL L H ON OFF OFF OFF OFF OFFH L L OFF ON OFF ON OFF ONH L H OFF OFF ON OFF OFF OFFL H L OFF ON OFF ON OFF ONL H H OFF OFF OFF OFF ON OFFH H L OFF ON OFF ON OFF ON
H H H OFF OFF OFF OFF ON OFF
Control Voltage State
1.9GHz Band 900MHz Band 1.8GHz Band
Application Note 4 NJG1133MD7
6/19
4-5-1 Typical characteristics (1.9GHz Band High Gain Mode)
Condition: Ta=+25
oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
0
5
10
15
20
0
2
4
6
8
-40 -30 -20 -10 0 10Gain (dB)
IDD (mA)
Pin (dBm)
Gain
IDD
Band1(1.9GHz) @High Gain
Gain, IDD vs. Pin(f=1950MHz)
P-1dB(IN)=-9.3dBm
10
11
12
13
14
15
16
17
18
1.90 1.92 1.94 1.96 1.98 2.00
Band1(1.9GHz) @High Gain
OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm)
-3
-2
-1
0
1
2
3
4
5
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
Band1(1.9GHz) @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
0
0.5
1
1.5
2
2.5
3
3.5
4
4
6
8
10
12
14
16
18
20
1.80 1.85 1.90 1.95 2.00 2.05 2.10
Noise Figure (dB)
Gain (dB)
frequency (GHz)
NF
Gain
Band1(1.9GHz) @High Gain
NF, Gain vs. frequency(f=1.8~2.1GHz)
(Exclude PCB, Connector Losses)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-9.3dBm
Pout
Band1(1.9GHz) @High Gain
Pout vs. Pin(f=1950MHz)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band1(1.9GHz) @High Gain
Pout, IM3 vs. Pin(f1=1950MHz, f2=f1+100kHz)
IIP3=-1.2dBm
Application Note 4 NJG1133MD7
7/19
4-5-2 Typical characteristics (1.9GHz Band High Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V
Application Note 4 NJG1133MD7
8/19
4-5-3 Typical characteristics (1.9GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band1(1.9GHz) @Low Gain
Pout, IM3 vs. Pin(f1=1950MHz, f2=f1+100kHz)
IIP3=+12.5dBm
6
7
8
9
10
11
12
13
14
1.9 1.92 1.94 1.96 1.98 2
Band1(1.9GHz) @Low Gain
OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-20dBm)
7
8
9
10
11
12
13
14
15
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
Band1(1.9GHz) @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
0
2
4
6
8
10
12
14
-14
-12
-10
-8
-6
-4
-2
0
1.80 1.85 1.90 1.95 2.00 2.05 2.10
Noise Figure (dB)
Gain (dB)
frequency (GHz)
NF
Gain
Band1(1.9GHz) @Low Gain
NF, Gain vs. frequency(f=1.8~2.1GHz)
(Exclude PCB, Connector Losses)
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+15.4dBm
Pout
Band1(1.9GHz) @Low Gain
Pout vs. Pin(f=1950MHz)
-25
-20
-15
-10
-5
0
0
20
40
60
80
100
-40 -30 -20 -10 0 10 20Gain (dB)
IDD (uA)
Pin (dBm)
Gain
IDD
Band1(1.9GHz) @Low Gain
Gain, IDD vs. Pin(f=1950MHz)
P-1dB(IN)=+15.4dBm
Application Note 4 NJG1133MD7
9/19
4-5-4 Typical characteristics (1.9GHz Band Low Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V
Application Note 4 NJG1133MD7
10/19
4-5-5 Typical characteristics (900MHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
0
5
10
15
20
0
2
4
6
8
-40 -30 -20 -10 0 10Gain (dB)
IDD (mA)
Pin (dBm)
Gain
IDD
Band8(900MHz) @High Gain
Gain, IDD vs. Pin(f=942.5MHz)
P-1dB(IN)=-7.7dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band8(900MHz) @High Gain
Pout, IM3 vs. Pin(f1=942.5MHz, f2=f1+100kHz)
IIP3=+0.6dBm
6
8
10
12
14
16
18
20
22
900 920 940 960 980 1000
Band8(900MHz) @High Gain
OIP3, IIP3 vs. frequency(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm)
-4
-2
0
2
4
6
8
10
12
frequency (MHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
Band8(900MHz) @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
0
1
2
3
4
5
8
10
12
14
16
18
800 850 900 950 1000 1050 1100
Noise Figure (dB)
Gain (dB)
frequency (GHz)
NF
Gain
Band8(900MHz) @High Gain
NF, Gain vs. frequency(f=800~1100MHz)
(Exclude PCB, Connector Losses)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-7.7dBm
Pout
Band8(900MHz) @High Gain
Pout vs. Pin(f=942.5MHz)
Application Note 4 NJG1133MD7
11/19
4-5-6 Typical characteristics (900MHz Band High Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V
Application Note 4 NJG1133MD7
12/19
4-5-7 Typical characteristics (900MHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+17.7dBm
Pout
Band8(900MHz) @Low Gain
Pout vs. Pin(f=942.5MHz)
-25
-20
-15
-10
-5
0
-200
-100
0
100
200
300
-40 -30 -20 -10 0 10 20Gain (dB)
IDD (uA)
Pin (dBm)
Gain
IDD
Band8(900MHz) @Low Gain
Gain, IDD vs. Pin(f=942.5MHz)
P-1dB(IN)=+17.7dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band8(900MHz) @Low Gain
Pout, IM3 vs. Pin(f1=942.5MHz, f2=f1+100kHz)
IIP3=+12.3dBm
0
2
4
6
8
10
12
14
-9
-8
-7
-6
-5
-4
-3
-2
800 850 900 950 1000 1050 1100
Noise Figure (dB)
Gain (dB)
frequency (MHz)
NF
Gain
Band8(900MHz) @Low Gain
NF, Gain vs. frequency(f=800~1100MHz)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
Band8(900MHz) @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
-2
0
2
4
6
8
10
12
14
900 920 940 960 980 1000
Band8(900MHz) @Low Gain
OIP3, IIP3 vs. frequency(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm)
6
8
10
12
14
16
18
20
22
frequency (MHz)
OIP3
OIP3 (dBm)
IIP3
IIP3 (dBm)
Application Note 4 NJG1133MD7
13/19
4-5-8 Typical characteristics (900MHz Band Low Gain Mode)
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V
Application Note 4 NJG1133MD7
14/19
4-5-9 Typical characteristics (1.8GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-7.1dBm
Pout
Band3(1.7GHz) @High Gain
Pout vs. Pin(f=1842.5MHz)
0
5
10
15
20
0
2
4
6
8
-40 -30 -20 -10 0 10Gain (dB)
IDD (mA)
Pin (dBm)
Gain
IDD
Band3(1.7GHz) @High Gain
Gain, IDD vs. Pin(f=1842.5MHz)
P-1dB(IN)=-7.1dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band3(1.7GHz) @High Gain
Pout, IM3 vs. Pin(f1=1842.5MHz, f2=f1+100kHz)
IIP3=+1.4dBm
10
11
12
13
14
15
16
17
18
1.80 1.82 1.84 1.86 1.88 1.90
Band3(1.7GHz) @High Gain
OIP3, IIP3 vs. frequency(f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-30dBm)
-2
-1
0
1
2
3
4
5
6
frequency (GHz)
OIP3
OIP3 (dBm)
IIP3 IIP3 (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
4
6
8
10
12
14
16
18
20
1.70 1.75 1.80 1.85 1.90 1.95 2.00
Noise Figure (dB)
Gain (dB)
frequency (GHz)
NF
Gain
Band3(1.7GHz) @High Gain
NF, Gain vs. frequency(f=1.7~2.0GHz)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
Band3(1.7GHz) @High Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
Application Note 4 NJG1133MD7
15/19
4-5-10 Typical characteristics (1.8GHz Band High Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Application Note 4 NJG1133MD7
16/19
4-5-11 Typical characteristics (1.8GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+17.6dBm
Pout
Band3(1.7GHz) @Low Gain
Pout vs. Pin(f=1842.5MHz)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
Band3(1.7GHz) @Low Gain
Pout, IM3 vs. Pin(f1=1842.5MHz, f2=f1+100kHz)
IIP3=+13.5dBm
7
8
9
10
11
12
13
14
15
1.8 1.82 1.84 1.86 1.88 1.9
Band3(1.7GHz) @Low Gain
OIP3, IIP3 vs. frequency(f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm)
9
10
11
12
13
14
15
16
17
frequency (GHz)
OIP3
OIP3 (dBm) IIP3
IIP3 (dBm)
0
2
4
6
8
10
12
14
-14
-12
-10
-8
-6
-4
-2
0
1.70 1.75 1.80 1.85 1.90 1.95 2.00
Noise Figure (dB)
Gain (dB)
frequency (GHz)
NF
Gain
Band3(1.7GHz) @Low Gain
NF, Gain vs. frequency(f=1.7~2.0GHz)
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
Band3(1.7GHz) @Low Gain
k factor vs. frequency(f=50MHz~20GHz)
frequency (GHz)
k factor
-25
-20
-15
-10
-5
0
0
40
80
120
160
200
-40 -30 -20 -10 0 10 20Gain (dB)
IDD (uA)
Pin (dBm)
Gain
IDD
Band3(1.7GHz) @Low Gain
Gain, IDD vs. Pin(f=1842.5MHz)
P-1dB(IN)=+17.6dBm
Application Note 4 NJG1133MD7
17/19
4-5-12 Typical characteristics (1.8GHz Band Low Gain Mode)
Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V
S11, S22 S21, S12
VSWR Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
Application Note 4 NJG1133MD7
18/19
4-6 Block diagram, Application circuit
Parts ID Comments
L1, L2, L4 ~ L9 MURATA (LQP03T Series)
L3 TDK (MLK0603 Series)
C1 ~ C5 MURATA (GRM03 Series)
Parts List
(Top View)
RF OUT3
(Band 3)
RF OUT2
(Band 1)
RF OUT1
(Band 8)
VCTL3=0 or 1.8V
(RX ATT)
VCTL2=0 or 1.8V
(Band Sel2)
VCTL1=0 or 1.8V
(Band Sel1)
RF IN3
(Band 3)
RF IN2
(Band 1)
RF IN1
(Band 8)
13
RFIN2
RFIN1RFOUT2
GND
VCTL2
VCTL3
VCTL1
Logic
Circuit
RFOUT3
RFIN3
RFOUT1
Band 3 (1.7GHz)
Bias
Circuit
Bias
Circuit
Bias
Circuit
GND
Band 1 (1.9GHz)
Band 8 (900MHz)
6
5
7
14
12
13
GND2 41 3
10 811 9GNDGND
L1
12nH
L2
6.8nH
L3
10nH
L4
2.9nH
L5
2.2nH
L6
2.9nH
L7
3.3nH
L8
1.1nH
L9
3.0nH
VDD=2.85V
C1
1.5pF
C2
2.0pF
C3
0.01uF
C5
0.01uF
C4
2.0pF
Application Note 4 NJG1133MD7
19/19
4-7 Evaluation board
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)
PCB SIZE=35.4mm x 17.0mm
L7
L8
L1
L2
L3L4 L5
L6L9
C1
C2C3
C4C5
RF IN3
(1.8GHz Band)
RF OUT3
(1.8GHz Band)
RF IN1
(900MHz Band)
RF OUT1
(900MHz Band)
RF IN2
(1.9GHzBand)
RF OUT2
(1.9GHz Band)
(Top View)
VCTL3 VCTL2VCTL1
VDD
VDD
CAUTION
In order not to couple with terminal RFIN and RFOUT, please layout ground
pattern under the IC.