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C-DAC All Rights Reserved
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SoC Design Process
Specification Realization Verification Fabrication Testing
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Know the Specifications
Functionality Speed Area Power Cost Time to market.
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Realizing the Functionality
High Level Design Design Capture in C, C++,
SystemC or SystemVerilog
RTL Design Verilog / VHDL
Schematic Design
FFgates
FF
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Realizing the Functionality
PROCESSINGLOGIC
ADC
FLASH
RAM
ROM
PLL
PERIPHERAL
OUTPUTINPUT
clock
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Verifying the Functionality
Simulation, Debugging of the RTL
Confirms the realized functionality against the required functionality
Generation of Golden RTL
VCS, NCSIM, Modelsim
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Implementing the Functionality “Mapping to Hardware logic”
Primitives Simple Gates, Flip flops, Complex gates etc.
Hard macros Memories, PLLs, Analog/RF IPs
Where to get all these hardware logic?
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Choosing the Resources
Foundry Semiconductor fabrication plant (fab) is a factory where
Integrated circuits are manufactured Accepts the design as GDSII and delivers the IC in die form.
IP Cores : Any reusable unit of logic, cell, or chip layout design
EDA Tools Category of software tools for designing electronic systems
such as Printed Circuit Boards and Integrated Circuits
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The Foundry Menu
Technology Feature size of the smallest length that can be
manufactured with that particular technology (usually gate length)
“The masks for different layer have grids of squares that are either "on" or "off“, the size of each square will be half of the
specified size”. Process
Nominal High speed Low power
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Choosing from Foundry Menu Follow your Specification
Frequency of Operation Area Operating voltage Power requirement Yield
Seek the availability of the required Third party IPs
Cost
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Semiconductor Technology selection
5V 5V
Vt = 1V
VOUT2
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Propagation Delay of Digital Abstraction
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Propagation Delay of Digital Abstraction
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Impact of Technology Scaling
Speed of operation
Area of Chip
Power consumption
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Selecting the Process
Regular process High speed process
Propagation delay will be minimum Power consumption higher
Low power process Multi Vt transistors
Leakage power consumption low Propagation delay will be high
Multi voltage transistors Reduced dynamic power
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MOSFET as a Switch
Digital circuits : MOSFET as a switch.
VGS >= VT : Switch is ON
VGS < VT : Switch is OFF
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MOSFET as a Switch
MOSFET: Not an Ideal switch since RON ≠ ‘0’
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MOSFET switch behavior
VS = 5V, VT = 1V, RON = 1K RL= 15K
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The “Static Discipline” Need for Static Discipline : Ensures proper switching action
VS VS
M1 M2
To Switch ON the MOSFET
VIN >= VT
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Increasing the Device Speed
Reduce RL ??
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Process Finalizing
Reduce VT LOW VT CELLS
The device won’t turn off abruptly when VGS drops below VT
High VT cells consumes less leakage power but operates at lower speed.
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Foundry / IP Vendor Deliverables For Hardware Mapping Primitive Cell Behavioral Models (Verilog)
Describes the functionality of the Cell. Primitive Cell Abstract Timing Models (.Lib)
Describes the functionality, propagation delay & power consumption of the cells.
Primitive Cell Abstract layout (LEF) Describes the pin position for ASIC layout
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Need for Abstract Models
outputinput
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Mapping to Hardware : Synthesis Golden Register Transfer level (RTL)
Functionality to be implemented Timing libraries (.Lib)
Mapping to Foundry supported primitive cells Design Constraints (.sdc)
Speed, Power, Area Synopsys “Design compiler” , Cadence “RTL
Compiler”
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Logical DRC Constraints
Max Transitions (Max Trans) Maximum allowable slew for the gates
Max Capacitance (Max Cap) Maximum allowable load capacitance for the
gates Max Fan-out
Maximum number of fan-out for a gate.
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Constraints (SDC)
Speed Clock frequency
Power Area
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How the synthesis tool Infer hardware Infers the Input /Output pins Infers the registers Infer the combinational gates Clock treated as Ideal clock Splits the entire design into 4 groups
Input 2 Register (I2C) Register 2 Register (C2C) Register 2 Output (C2O) Input 2 Output (I2O)
Maps the cells according to the constraints
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Synthesized Logic for 800 MHz
A BC
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Static Timing Analysis
A
B
C
C L K8 0 0 M H z
D e la y o f F lipFlo p
D e la y o f A ND g a te
S e tu p t im e fo r FF
C L K
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Static Timing analysis (set-up violation)
A
B
C
C L K1 G H z
D e la y o f FlipFlo p
D e la y o f A ND g a te
S e tu p t im e fo r FF
C L K
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Timing Library
Models cell delay as function of “input slew” and “output load”
Models cell power Switching power as function of “input slew” and
“output load”
Leakage power
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Synthesis Place and Route Mapped Netlist
Mapped to a specific foundry library Constraints
SDC LEF
Layout of the cells in Abstract form Details of Metals and Via
Timing Library .lib
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P&R :Floorplanning
Arranging all the modules and macros
Objectives Minimize area Reduce wirelength Maximize routability Determine shapes of flexible
blocks Constraints
Shape of each block Area of each block Pin locations for each block Aspect ratio
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Placement The process of arranging circuit components
on a layout surface Inputs : Set of fixed modules, netlist Output : Best position for each module based
on various cost functions Cost functions include wirelength, wire
routability, performance
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Good placement vs Bad placement
Good placement No congestion Shorter wires Less metal levels Smaller delay Lower power dissipation
Bad placement Congestion Longer wire lengths More metal levels Longer delay Higher power dissipation
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Routing Connect the various standard cells using
wires Objective
100% connectivity of a system Minimize area Minimize wirelength
Constraints Number of routing layers Design rules Timing (delay)
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Global Routing vs Detailed Routing
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Clock Tree Synthesis Why Clock needs buffering?
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Setup Timing
Skew
CLK FF1
CLK FF2
FF2_in
FF1_in
T in_to_FF1_out + T FF1_out_to_FF2_in + T set_up_FF2 = < TCLK + TSKEW
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Hold Timing
CLK FF1
CLK FF2
FF2_in
FF1_in
T in_to_FF1_out + T FF1_out_to_FF2_in >= Thold_FF2 + TSKEW
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Setup & Hold Timing
Hold Violation is Independent of Clock Frequency
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Power Routing Creation of power grid to ensure Power Integrity
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Physical Verification: Design Rule Check Determines whether the physical layout of a particular chip layout
satisfies a series of recommended parameters called Design Rules
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Semiconductor Manufacturing Yield Percentage ratio of “good dies” over total dies manufactured
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Appendix: Inside a Semiconductor foundry
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Appendix: Semiconductor Technology Nodes
10 µm — 1971 3 µm — 1975 1.5 µm — 1982 1 µm — 1985 800 nm (.80 µm) — 1989 600 nm (.60 µm) — 1994 350 nm (.35 µm) — 1995 250 nm (.25 µm) — 1998 180 nm (.18 µm) — 1999 130 nm (.13 µm) — 2000 90 nm — 2002 65 nm — 2006 45 nm — 2008 32 nm — 2010 22 nm — 2012