Attivita’ sul microvertice a Torino

Commissione scientifica 3, Genova 21 settembre 2009

Daniela Calvo

Micro-Vertex-Detector requirements

p p 0.1 mm

Beam pipe

Primary vertex

secondary vertex

• Good spatial resolution in r-phi– Momentum measurement of

pions from D* decays

• Good spatial resolution specially in z– Vertexing, D-tagging

• Good time resolution – rms 6 ns (at 50 MHz clock)

with 2·107 ann/s

• Triggerless readout

• Energy loss measurement– dE/dx for PID

Low material budget– low momentum of particles

(from some hundreds of MeV/c)

(<1% X0 for each layer)

• Radiation hardness (~4·1013 n 1MeV eq /cm2 )

(half year data taking, 15 GeV/c antip-p)– Different radiation load

MVD layout

Micro Vertex Detector4 barrels

Inner layers: hybrid pixelsOuter layers: double sided strips

and 6 forward disks4 disks: hybrid pixels

2 disks: pixel and strips mixed

Custom Pixel Detector:

100 m x 100 m pixel sizes; ~ 1000 FE readout chip (114x110 pixels); continuous data transmission without trigger maximum event rate per cm2:

~ 12.3 MHz for pbar-Au at 15 GeV/c max. chip data rate : ~ 0.8 Gb/s (40 bit/pixel) energy loss measurement: time over threshold;

dynamic range: 100 fC

By G. Giraudo

By G. Giraudo 40 cm

30

cm

D. Calvo

Overview

Status of the activities for the pixel detector in Torino

Assembly layout

Electronics and cables

Mechanics and cooling

Standard hybrid technology

ASIC developed by the 130 nm CMOS technology with triggerless readout.Up to now the readout is in 250 nm CMOS technology (see LHC experiment with trigger )

THIN PIXEL SENSORS(< 150 m) realized with EPITAXIAL SILICON material (suggested by Boscardin-FBK)(At LHC: thickness of 200 m; at RD50 diodes with epitaxial material )

= 0.01÷ 0.02 ·cmd = some hundreds of m

Carbon fiber mechanical support

Cooling system

Carbon foam supportto improve power dissipation

The thinning starts from this side, reducing the substrate to tens of m.

Several processes for defining geometry and for obtaining pixel sensorsare made on this side

= 3 ÷ 4 K·cmd = 25 ÷150 m

Bump bondingreadout chip

silicon Cz substrate

epitaxial silicon layer

Assembly layout

2-chip module

ToPiX readout chips

0603 supply filtercapacitors

Sensor

Controller chipPower cable Data cable 0805 bias filtercapacitor

Multilayer bus structure

Assembly scheme

By R. wheadon

Keeping cables out of active region means that some modules may require two designs according to which end the cables have to be connected

Layout of forward disks

Possibility of daisy-chaining controllers to save on cables (where data rates allow)

Controller chips serve two or three ToPiX readout chips

For outer layer of barrel would need to daisy-chain two 6-chip modules (power and controller chips) to keep cables out of active region

By R. wheadon

Electronics and cables

Technology LM -> DM (the HEP mainstream)• LM: 6 (thin) + 2 (thick) metal layers• DM: 3 (thin) + 2 (thick) + 3 (RF) metal layer

– RF layer shows lower resistivity and helps power routing– RF layer gives more precise capacitance – shared bus among adjacent columns

Upgrade of ToPix

25 m 100 m

Clock from 50 MHz to 160 MHz– time stamp bin: ~6ns

– new columns and receivers to be redesigned

– new simulations

SEU protection: DICE cells -> triple redundance?– twice size increase in the digital part of the chip -> rescaling of the analog part

Upgrade of ToPix

Upgrade of the analog part of ToPix - I

Adaptation for the clock @ 160MHz

In order to keep the same clock_cylces to injected_charge ratio as ToPix2 (clock@50MHz), the discharging current value has to be proportionally increased from 5 nA to 16 nA.

QinClock

frequencyToT

Clock cycles

Clk_cy/Qin

30 fC 50 MHz 6.094 ns 304 10.1

30 fC 160 MHz 2.000 ns 320 10.7

Simulation result of analog output signal with the 2 different clock values

Upgrade of the analog part of ToPix - II

Compact leakage compensation stage

Layout compatible with the DM process

ToT

(To

T (

s)s)

Leakage current (nA) Leakage current (nA)

ToT variation due to the leakage currentSimulation: Qin = 80fCdToT/dIleak=-1.53ns/nA

Baseline variation of 0.6mV when the leakage current increases from 10nA to 100nA. (~2mV)

Equivalent fluence values on the diodes : 5.13x1013, 1.54x1014, 5.13x1014n(1MeVeq)/cm2 corresponding to 1, 3 and 10 years of PANDA lifetime

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

Epi-50 Epi-75 Epi-100

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ltage

[ A

/ cm

3 ] Pre-irradiation 1 year 3 years 10 years

The radiation damage constant is

= J= 7.6(0.3)x10-17 A/cm for all diodes.

Lekage current < 50 nA/pixel (100 mx100m size, 100 m thick)

Results from radiation damage test of epi-diodes: the radiation damage constant

R&D – electronics and connections

Readout chipDetector Module controller

Opticaltransceiver

cable

to counting room/daq

Development in progress with prototypes Study of the architecture in progress( test of high frequency cable)

Development in progress in other collaboration

PCB -BUS

First prototypes

Preliminary bus scheme

By R. Wheadon

Cable prototype – testing board layout

1 m differential cable

Al

AlKapton(SU8)

connectors

pads

Cable prototype –preliminary simulation

By Paolo De Remigis

Updates from pixel cooling

Responsible: S. ColiINFN - Torino

Results from test

New prototype done 12 resistors on 4 rows, 2 rows x side “disk body” by POCO-HTC foam 2 tubes embedded (øe2mm, øi1.84mm)

TEMPERATURE PROFILE

COOLING TEST RESULTS –IR IMAGES

Results from simulations

1 W/cm2

0.3 ℓ/minwater 18.5 oC

POCO-HTC K (75, 245, 245) W/mKFEM RESULTS

INPUT DATA

Cooling system for disks

Disk split in two halves along the mid-planeMaterial for heat dissipation: foam POCO-HTCEmbedded cooling capillary between the two halvesAll elements grued with thermal glueProblem: large glueing area -> test have to be performed

Results with different material for coolingPOCO FOAMDensity: 0.55 g/cm3

POCO HTCDensity: 09 g/cm3

Pyrolytic GraphiteDensity: 2.2 g/cm3

Total power: 90 WCoolant Temperature: 20°C

Max. Reached TemperaturePoco Foam: 23°CPOCO HTC: 21.7°CPG: 23.3 °C

Cooling pipe scheme1 tube Ø62tubes Ø8

2xØ4

1 manifold 21

6xØ4 1 manifold 61

6xØ4

1 manifold 61

4 manifolds 41

2 manifolds 41

6 tubes Ø6

2xØ4

6xØ46xØ4

1 manifold 61

1 manifold 21

1 manifold 611 tube Ø62tubes Ø8

By B. Giraudo

Updates from MVD Mechanics

Responsible: G. GiraudoINFN - Torino

MVD layout

>250 mm

Ø 20.4 mmØ 20.4 mm

Fittings for cooling pipes

Ancillary parts as special fittings and curves can becommon parts made from Ryton R-7-220 by injection mould

7 mm diameter16 mm length3 bar maximum pressure

Mechanics details

~1,3 mm~1,3 mm

25 mm (20 mm)25 mm (20 mm)

Primary target

Responsible: F. IazziPolitecnico and INFN - Torino

Primary target

The target will be built through the following steps:Step 1The target production starts from a disk shaped basis of Cu, (sizes:14mm diameter and 0.5 mm thickness), on which a carbon layer 20 m thick will be deposited Remarks:•the density of the layer is not the graphite density, but close to that: it will be measured (we will use the back-scattering technique) •the thickness of the layer can be chosen without major constraints in the range 10-40 m and will be measured by optical techniques with good precision (better than 5%), after the depositionStep 2After the deposition the carbon layer will be masked along the wires and the rest of the carbon will be wet-etched and taken away. The result will be a Cu disk having 3 wires of about 14 mm x 20 x 20 m2 glued on.The distances between the 3 wires could be 3.5 mm in order to avoid the beam spot overlapping on 2 wiresStep 3 (see fig. 2, where the ring is in violet, wires in black/white)The Cu disk will be wet etched and taken away unless a ring (external diameter 14 mm, internal 12 mm), which will be previously masked. The result will be a ring with 3 C wires like a guitar.Step 4 The Cu ring with wires will be inserted inside a Al local frame, whose aim will be to manage the plugging of the target into the beam pipe

side view

13 15

.5

6

Al

Cu

C

14

frontal view

14

152

14

13

3.53.5 2.52.5

Next step and conclusions

Richieste capitolo Missioni Interne

Richieste capitolo Missioni EstereMISSIONI ESTERE:•Partecipazione ai 4 meetings di collaborazione con cariche ufficiali: 4 pp al Coordination Board: (Calvo, Filippi, Marcello, Iazzi) e 1 pp al Technical Board (Calvo) (i meeting generali sono programmati a 5 gg). 5gg+viaggio x 4 meetings x 5pp: 25 keuro•Partecipazione ai meetings del microvertice e della meccanica dell’esperimento con presenza del coordinatore meccanica mvd (G. Giraudo) e responsabile cooling ( S. Coli) e partecipanti al FEE tag (D. Calvo e A. Rivetti). 3gg +viaggio x 7 meeting x 3 pp: 13 keuro•settimana di lavoro a Julich per microelettronico con sviluppo logica di controllo in collaborazione. 5gg+viaggio x 1 p: 1.5 Keuro•lavoro di integrazione della meccanica e del cooling dei pixel e delle strips intorno alla beam pipe e targhetta, con il routing (1 sett. a Julich, 1 sett.a Bonn, 1 sett.al GSI). 5gg+viaggio x 2 pp x 3 incontri: 5 Keuro•contatti scientifici del responsabile locale mvd con il responsabile mvd a Bonn, per scrittura TDR. 4 gg+viaggio x5 contatti x 1p: 3 Keuro•2 Physics meetings ( Iazzi e’ partecipante). 2gg+viaggio x 2 contatti x 1 p:1.5 keuromeetings di aggiornamento software di una settimana per 2 persone presso GSI. 5 •gg+viaggio x 1 corso x 2 pp: 3 keuro•dottorando al GSI per lavoro sulle simulazioni, circa 10 giorni: 1.5 keuro•contatto con Fraunofher Institute per bump bonding dei sensori. 2gg+viaggio x 1p: 1.5 keuro•contatti scientifici con gruppi europei (fisica e tecnologia). 3 gg+viaggio x 3 contatti x 2 pp: 3 keuro•1 settimana di progettazione meccanica della regione ipernucleare- beam pipe a Julich. 5 gg+viaggio x1 pp: 1 Keuro•Meeting per sviluppo targhetta e beam pipe per la parte ipenucleare. 2gg+viaggio x 2 contatti x 1 p:1.5 keuro•partecipazione a due congressi internazionali per presentare i risultati del mvd: 5 gg+viaggio x 1p x 2 congressi: 3.5 keuro •test TID con X al CERN per ToPix3 ( sj alla disp. sorgente e chip). 7gg+viaggio x 1 misura x 2 pp: 2 keuro•test con protoni (circa 23 GeV) per studiare i sensori epi (sj all’ass.fascio) con spessore fino a 100 micron. 7gg+viaggio x 1 misura x 4pp, compresa installazione: 4 keuro•test a Bonn (elsa) di radiation lenght di carbon foam ( sj. ass fascio): 5gg+viaggio x 1 misura x 2 pp: 2.5 keuro Totale M.E.: 62.5 kEuro + 8.5 kEuro sj

Richieste capitolo CONSUMO

sj sj

Richieste capitolo INVENTARIO

f.t.e. nel 2010 a Torino

Calvo Daniela: 80%Busso Luigi: 30%De Mori Francesca: 20%Filippi Alessandra: 30%Marcello Simonetta:70%Kugathasan Thanushan: 100% Szymanska Katarzyna: 100%Iazzi Felice: 100%De Remigis Paolo (elettronica): 60%Mazza Giovanni (microelettronica):30%Rivetti Angelo (microelettronica):20%Wheadon Richard (sensori/elettronica):20%Coli Silvia (meccanica/tecnologia):70%Giraudo Giuseppe (meccanica/tecnologia):70%

= 8fte

E personale tecnico INFN-TorinoLaboratorio di Elettronica e Laboratorio

tecnologico/Officina meccanica