We make it visible.

AURIGA® SeriesInformation Beyond Resolution

CrossBeam® Workstat ions (FIB-SEM )

Carl Zeiss M icroscopyElectron and Ion BeamMicroscopes

More than 160 years of experience in optics has laid the

foundation for pioneering light, electron and ion beam

microscopes from Carl Zeiss. Superior integration of imaging

and analytical capabilities provides information beyond

resolution, unlocking the best kept secrets of your sample.

With a broad technology portfolio Carl Zeiss provides

instruments both tailored to your requirements and adaptable

to your evolving needs. With our highly versatile application

solutions we endeavor to be your partner of choice.

Regional demo centers provide you with access to our

applications expertise developed in collaboration with world-

class partners in industry and academia. Global customer

support is provided by the Carl Zeiss Group together with an

extensive network of authorized dealers.

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AURIGA® SeriesInformation Beyond Resolution

Unique Imaging

■ Imaging of non-conductive specimens using all standard

detectors with local charge compensation

■ Simultaneous detection of topographical and compositional

information with a unique detector scheme including

EsB®-technology

■ Investigation of magnetic samples with GEMINI® objective

lens design

Advanced Analyt ics

■ Analysis of non-conducting materials with local charge

compensation

■ Multi-purpose chamber with 15 accessory ports

■ Optimum chamber geometry for the simultaneous integration

of EDS, EBSD, STEM, WDS, SIMS etc.

Precise Processing

■ Innovative FIB technology with best-in-class resolution

(<2.5 nm)

■ High resolution live FE-SEM monitoring of the entire

preparation process

■ Advanced gas processing technology for ion and e-beam

assisted etching and deposition

Future Assured

■ Expandable platform concept based on GEMINI® FE-SEM

technology

■ Modular building blocks for value-adding functionality

SEM

Scanning Electron Microscopes

FE-SEM

Field Emission - Scanning Electron Microscopes

HIM

Helium Ion Microscopes

CrossBeam®

CrossBeam® Workstations (FIB-SEM)

TEM

Transmission Electron Microscopes

1µm

Annular milling: Nanometer-scale structuring by

direct ion beam writing, e.g. for atom probe tips.

The image shows a very sharp Si tip

(radius < 20nm) trimmed from Si posts which

were fabricated by reactive ion etching.

2µm

Secondary ion detector: Visualisation of the

intergranular corrosion in a Ni based superalloy by

detection of secondary ions. The image was taken

using a FIB current of 3nA.

10µm

3D EBSD data cube of an electrodeposited

Ni film providing microstructural information

such as grain orientation.

Dimensions: 10µm x 4µm x 5µm.

Local charge compensation produces a significant

increase in the analytical data. EDS spectra of

a ZrO2 sample taken at 15kV with (blue) and

without (yellow) local charge compensation.

All emission lines above approx. 6kV are only

accessible with local charge compensation.

3D anode reconstruction of a solid oxide fuel

cell illustrating the distribution of the different

phases. The pores are in blue, Ni in green

and the YSZ phase is translucent.

Courtesy of J. Wilson, Northwestern University,

USA.

■ 3D imaging and analysis of non-conducting materials

with local charge compensation

■ Patterning of complex nanostructures and high resolution

ion imaging based on innovative FIB technology

■ Simultaneous detection of topographical and

compositional information with unique GEMINI® detector

scheme

■ Maximum information out of the sample with a system

designed for advanced analytics: 3D EBSD, EDS, WDS,

SIMS etc.

Applicat ions in M aterials AnalysisInformation Beyond Resolution

Small image: no local charge compensation.

Chamber SE image of an uncoated fibre adhesive (used in modern shipbuilding) taken at 5 kV with local charge compensation.

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Applicat ions in M aterials AnalysisInformation Beyond Resolution

Semiconductor Technology

■ 3D surface sensitive imaging with fast FIB cross section

milling and low voltage high resolution optics design

■ Perfect sample characterization using integrated and

optional analysis technology such as STEM or EBSD

■ Creation of complex nanopatterns with advanced focused

ion beam and gas processing instrumentation

■ Full workflow control and throughput enhancement in

TEM sample preparation by high resolution live imaging

and software-based process automation

Cross section through the front contact of a Si wafer-based solar cell. The image was taken with in-lens SE detector at 2 kV. Courtesy of Dr. F. Machalett, ersol

Solar Energy AG, Erfurt, Germany.

High-angle annular orientation dark field (HAAoDF)

STEM image of a semiconductor device showing

Cu metal lines and W plugs with grain orientation

contrast. Imaged at 30 kV.

Layer stack and morphology of a CdTe based thin film solar cell. The images show

a cross section taken with in-lens SE detector at 2 kV (left) and a 2D EBSD map of the

CdTe absorber film (right). Courtesy of Prof. W. Jaegermann, TU Darmstadt, Germany.

2µm 200nm

3D nanopatterning based on greyscale bitmap

image. Example shows a "NanoLincoln"

(large image) and the original photograph of

the Lincoln Memorial (inset).

Quantitative three-dimensional EDS map of

Ag(SnO2, In2O3), a lead-free solder alloy.

This 3D reconstruction was calculated from

117 individual EDS elemental maps recorded

automatically over 14 hours.

Yellow: tin, green: indium, blue: oxygen.

5µm2µm

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1µm

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Applicat ions in Life SciencesInformation Beyond Resolution

■ Full sample information with large area / large volume

milling and high resolution imaging

■ Vivid high depth of focus imaging of biological samples

with no additional preparation using the local charge

compensation method

■ Unsurpassed depth resolution in tomography applications

with highly sophisticated milling control

■ Access to accurate structural information with 3D

reconstruction

3D view of a 5x5 x5µm section of a drosophila

larval brain at 5 nm isotropic resolution.

A complete wiring diagram of the brain can be

constructed when one images its entire volume.

Sub 10nm resolution along z-axis is crucial

for neuronal wiring diagram reconstruction.

Courtesy of C. Shan Xu, Janelia Farm Research

Campus, HHMI, USA.

Detail image of uncoated fly in the eye region.

Imaged at 3.4kV with local charge compensation

and in-lens SE detector.

Counting synapses using FIB/SEM microscopy: A true revolution for ultrastructural volume reconstruction.

3D mapping of mouse brain with high z-resolution by serial FIB slicing and SEM imaging. The exemplary cross section is one of a large image stack with 20nm

slice thickness and a pixel size of 4 nm. The image was taken with the EsB® detector at 2kV.

3D reconstruction of chromosomes based on

real-time movie. The individual frames were

acquired with in-lens SE detector at 2kV.

Courtesy of Prof. G. Wanner, Munich, Germany.

100µm

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Image shows AURIGA®

with a 4“ stage.

■ Based on a fully modular concept, the AURIGA®

CrossBeam® workstations can be tailored to the

individual customer’s applications – today and in the

future.

■ Starting with a high-performance FE-SEM platform,

the system can be upgraded with a wide variety

of hardware and software options, such as FIB, GIS,

local charge compensation system and different

detectors.

GEMINI® FE-SEM column

with in-lens SE detector for high

resolution and contrast imaging

FE-SEM Plat form

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AURIGA® vacuum chamber

with 15 free accessory ports2

FIB column

for fast and precise sample modification

- Canion column for multi-purpose

applications

- Cobra column with best-in-class FIB

resolution

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Gas inject ion system

for a wide range of versatile gas processes

- Single GIS

- Multi GIS with up to 5 precursor materials

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Airlock

for fast and convenient sample transfer

- 80mm or

- 100mm maximum specimen size

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Local charge compensat ion and

in-sit u sample cleaning

- Multi GIS integrated or

- Charge compensator

6 In-lens EsB® detector

for the highest material contrast

Further Opt ions

Ion detector, STEM, 4QBSD, EDS, EBSD,

WDS, SIMS etc.

CrossBeam® Components Opt ions

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AURIGA® Series Custom-Tailored and Future Assured

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Focused Ion Beam – the essential CrossBeam® component

WDS for highest sensitivity chemical analysis

Electron flood gun for charge control during ion beam preparation

Charge compensation for charge control in SEM imaging and analysis

EDX for fastest chemical analysis

STEM detector for TEM like imaging and quality control

EBSD for crystallographic mapping

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Multichannel GIS for maximum precursor flexibility on a single flange

Single needle GIS for high angle sample access

Manipulators for sample modification and probing

4QBSD detector for high efficiency and angle selective material

characterization

EsB® detector for finest z resolution without topographic artefacts in

FIB nanotomography

Cathodoluminescence detection for optical material characterization

Cryo stage and transfer for access to frozen or beam sensitive material

Airlock solution (80mm ) for fast and efficient sample transfer

Airlock solution (200 mm) for fast and efficient sample transfer

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AURIGA® & AURIGA® 60Flexibility Taken to Extreme

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Modern materials research is

characterized by a great complexity of

tasks. Chemical composition,

crystallographic orientation, complete

morphology, and electrical attributes

are only some of the questions

scientists and engineers seek answers

to. Their success depends on a

detailed insight into topography and

structure of the samples examined.

On the other hand, in developing novel

materials specimens often have

to be extremely precisely processed.

To address these demands, the

AURIGA® CrossBeam® workstation

series has been designed to

accommodate an optimum number

of accessories/ detectors only

depending on the size of the vacuum

chamber.

Due to a large 6” stage vacuum

chamber, the AURIGA® 60 essentially

broadens the application spectrum of

the Carl Zeiss CrossBeam® technology.

Up to 23 analytical or other

accessories for diverse chemical or

physical experiments can be mounted

on the chamber, e.g. different

detectors or a cryogenic transfer unit.

Thanks to a modular setup the system

is capable of being simply and flexibly

upgraded. So, one can start with a

stand-alone FE-SEM platform that can

be upgraded stepwise to a fully

equipped CrossBeam® workstation.

The highly versatile and flexible

functionality of AURIGA® 60 enables

new perspectives in 3D-imaging leading

to fascinating insights into the building

blocks of life or novel materials

for future technological applications.

CrossBeam® Workstat ions (FIB-SEM) AURIGA® & AURIGA® 60

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CrossBeam® Concept

Fast and precise sample

mod if icat ion

The ever increasing requirements on

sample throughput and precision

of milled objects are met by integrating

the most innovative focused ion beam

technology. High brightness liquid metal

ion sources combined with state-of-

the-art electrostatic lens design deliver

an excellent imaging resolution

combined with high current ion beam

densities and up to 50 nA total beam

current.

Deposition of conducting or non-

conducting materials, as well as

enhanced and selective etching, can

be performed with either the

electron or ion beam when combined

with the highly flexible gas injection

technology.

Instrument usage can be optimized

by the "on-board" automation tool

set that is easily adapted to specific

customer requirements using

straightforward setup wizards and

an intuitive scripting language.

High resolut ion process cont rol

High resolution live electron imaging

for excellent site specific control

of the milling process is based on an

advanced optical design that provides

a practically magnetic field-free

sample environment. Consequently,

a change in the settings of the electron

optical system will not interfere at

all with the FIB processing; even more

importantly there will be no

compromises in terms of SEM resolution

or ease-of-use of operation while

monitoring and controlling the ion

beam processing in real time.

Flexible imaging

Topographical and compositional

sample information are conveyed

simultaneously by high resolution

scanning electron imaging of secondary

and backscattered electrons.

Structural and material information on

crystalline samples or oxidation

layers can be obtained when operating

in FIB imaging mode and detecting

secondary ions generated during ion

beam scanning of the specimen.

Key components of the AURIGA® CrossBeam®:

GEMINI® electron optical column (center), focused ion beam (left) and gas injection system (right).

GEMINI® Elect ron Opt ics

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Superb imaging and analysis

Imaging of modern compound

materials requires an electron optical

system capable of delivering high

resolution images with excellent

contrast even at very low beam

energies. The advanced optical system

design of the GEMINI® meets this

requirement with its unique beam

booster approach, providing

decreasing lens aberration coefficients

with decreasing beam energy.

Imaging of magnetic materials, such

as ferromagnetic steel or rare

earths, can be easily achieved with

an objective lens designed for

minimum magnetic field at the sample.

High voltage material characterization

by EDS, EBSD or other advanced

techniques is based on a system

designed for analytics.

With its short analytical working

distance of down to 5 mm and an

optics design that provides optimised

beam current conditions and hence

signal to noise ratios, the system is

ideally suited for any kind of material

investigation.

Ease of use by design

Being able to easily adjust parameters

such as the beam voltage and field of

view is of key importance in optimizing

an instrument for maximum resolution

and contrast imaging. Faster time to

result can be achieved with an optical

system design providing truly

continuous adjustment of magnificati-

on, no tedious re-alignments after

a change in beam energy, and a

system control that automatically

provides optimized values for beam

aperture selection.

Instant topography and

composit ion

Topographical and compositional

information is obtained simultaneously

thanks to the unique detector

architecture that allows parallel

detection of secondary and back-

scattered electrons. Two secondary

electron detectors – chamber mounted

and in-lens – guarantee maximum

topography information for samples

of various heights and shapes.

The optional EsB® detector provides

highest material contrast with energy-

filtered detection of backscattered

electrons.

The beam booster advantage: decreasing lens

aberrations with decreasing beam voltage for high

resolution imaging at very low landing energies.

Magnetic field leakage of the GEMINI® lens

compared to a traditional single pole lens design.

A minimum magnetic field is required for the

high resolution investigation of magnetic materials

and undistorted ion beam operation.

Electromagneticaperture changer

Field lens

Annular SE detector

Beam booster

Magnetic lens

Scan coils

Specimen

UB

Upe

Uex

Electrostatic lens

Usup

Annular BSE detector

UF

Schematic view of the

GEMINI® column.

With its minimum mechanical

degrees of freedom,

the system is designed for

maximum ease of use.

Local Charge Compensat ionUnique Technology

Imaging and analysis of charging

samples

The local charge compensator is

essential to ensure maximum

information gain for insulating materials.

This system enables convenient SEM

imaging across the entire range of

acceleration voltages, better milling

results by suppressing FIB-deflections,

superior high kV analytics, such as EDS

or EBSD, with no information loss, as

well as the use of all standard detectors.

The design of the local charge

compensation system is based on a

gas which is locally injected into

the area of interest and ionized by

collisions with charged particles.

This ionisation results in the desired

removal of specimen charging and

can also be used for in-situ sample

cleaning.

Sample

Charge Compensator

Pneumatic retraction

mechanism

Gas needle

EsB® detector

In-lens detector

Fast change between local charge compensation and high vacuum operation is guaranteed by a simple pneumatic retraction mechanism

for the gas injection system.

The sample surface is charged up by electron

irradiation. The gas flow is turned on and the gas

molecules (light green) form a local gas cloud

above the sample surface.

SE and BSE emitted from the sample surface ionize

the gas molecules. The sample surface is neutralized

when the resulting positive ions (darkgreen) hit

the sample. Full imaging and analytical capabilities

are thus enabled.

EsB® Backscat tered Elect ron Detect ionUnique Technology

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Online composit ional informat ion

Acquiring data about sample

composition by direct imaging provides

a quick and easy way to obtain

material information. The GEMINI®

column features the so called Energy

and Angle Selective EsB® detector that

allows an almost pure compositional

image to be obtained by filtering out

unwanted surface information.

This compositional information is

extracted by blocking secondary

electrons from the EsB® detector by

a negatively biased filtering grid.

Signal mixing

The possibility of adjusting the filtering

strength of the EsB® detector and the

simultaneous acquisition of secondary

electrons by the in-lens and chamber

mounted SE detectors enable optimum

real-time signal mixing.

Filtering grid technology for maximum compositional contrast information.

The filtering rejects secondary electrons and only the backscattered electrons pass through

to the upper EsB® detector.

FIBSEMEssent ial Specif icat ions

AURIGA® & AURIGA® 60Technical Data

Resolut ion

Magnif icat ion

Probe Current

Accelerat ion Volt age

Emit t er

Gas Inject ion System

Stage

Airlock

Detectors

Chamber

System Cont rol

Space Requirement

GEMINI® column

1.0 nm @ 15 kV

1.9 nm @ 1 kV

Values measured at optimum working distance

12x – 1000 kx

4pA – 20nA (100nA optional )

0.1 – 30kV

Schottky Field Emitter

a) Multi GIS for up to 5 precursors (Pt, C, W, insulator, fluorine, further gases on request)

b) Multi GIS for up to 4 precursors with integrated local charge compensation system

(use of all standard detectors possible)

c) Single GIS system for 1 precursor (Pt, further gases on request)

d) Fully automated and pneumatic retractable gas injector for local charge compensation

and in-situ sample cleaning (use of all standard detectors possible)

6-axis super eucentric, all motorized stage

Motion range X,Y = 100mm

Z = 55mm, (50mm = AURIGA® 60)

Z = 10 mm, (13 mm = AURIGA® 60)

Tilt = -10 – 60°, (-15 – 70° = AURIGA® 60) Rotation = 360° continuous

Analytical working distance = 5 – 8.5 mm

80 mm / 100 mm manual airlock with specimen exchange position

In-lens: High efficiency annular type SE detector

Chamber: Everhart-Thornley type SE detector

In-lens: EsB® detector with filtering grid for BSE detection, filtering voltage 0 – 1500 V

Chamber: Combined Secondary Electron Secondary Ion (SESI) detector

based on scintillator photomultiplier system

Solid state or scintillator type BSD detector

GEMINI® multimode BF/DF STEM detector

330mm (Ø), 266 mm height, (520mm (Ø), 307 mm height = AURIGA® 60)

15 accessory ports, (23 accessory ports = AURIGA® 60) for various options including STEM, 4QBSD, EBSD,

EDS, WDS, SIMS, GIS systems, local charge compensation and sample manipulation systems

2 x IR CCD-cameras included for sample viewing

Integrated SmartSEM® user interface based on Windows® operating system, controlled by mouse,

keyboard, joystick and control panel (optional)

2 x 19’’ TFT monitors included

Minimum footprint: 2.3m x 2.7 m, (2.4m x 4.2m x 2.3m = AURIGA® 60)

Minimum working area: 3.0m x 4.0m, (Recommended room size: 4.0 m x 6.0 m x 2.3m (h) = AURIGA® 60)

Cobra column: < 2.5nm @ 30kV

Canion column: < 7nm @ 30kV

300 x – 500 kx

1 pA – 50nA

< 1.0 – 30 kV

Ga Liquid metal ion source (LMIS)

= upgrades

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Would you like to have a product demonstration? Are you looking

for application support? Please do not hesitate to contact us for

an appointment to visit one of our superbly equipped demo centers.

We look forward to seeing you.

For more informat ion please visit us at w w w.zeiss.com/microscopy

Global Sales and Service Netw orkCarl Zeiss Microscopy

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Carl Zeiss M icroscopy GmbH07745 Jena, Germany microscopy@zeiss.com www.zeiss.com/microscopy We make it visible.