ST MicroelectronicsPower Devices for Solar Inverters

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ST 600 V SiC diodes

ST 600 V SiC diodes

One step ahead in power integration

No or negligible reverse recovery characteristics

Switching behavior independent of temperature

Particularly suitable in PFC boost diode function

SiC diodes boost the performance of PFC operations in hard switching conditions

SiC applications

Continuous mode PFC

High-frequency motor control

Electric vehicles

Solar inverters

Reliability-test boards

SiC repetitive IFSM reliability board

Repetitive IF of 40 A

on STPSC1006D

SiC high dV/dt reliability board

(dV/dt)off = 120 kV/s

Turn-on of the SiC diode

100 V/div

0V

Turn-off of the SiC diode

Key performance information

Key features at 25 °C, for all 600 V devices

STPSC406D

IFav 4 A

Qc 3 nC

VF (typ/max) 1.55 V/1.90 V

IFRM 14 A

STPSC606D

IFav 6 A

Qc 6 nC

VF (typ/max) 1.40 V/1.70 V

IFRM 27 A

STPSC806D

IFav 8 A

Qc 10 nC

VF (typ/max) 1.40 V/1.70 V

IFRM 30 A

STPSC1006D

IFav 10 A

Qc 12 nC

VF (typ/max) 1.40 V/1.70 V

IFRM 40 A

STPSC1206D

IFav 12 A

Qc 12 nC

VF (typ/max) 1.40 V/1.70 V

IFRM 65 A

ST 600 V SiC diode roadmap

February 08

Range extension

Package extension

Product qualification

Range and package extension

April 08

8/10 A diodes Qualification

April 09

4, 6 and 12 A diodesQualification

May 09

SMD:DPAK, D²PAK

2010

20 A TO-247

2010/11

1200v Extension

Best performances in all ranges

Power MOSFET families

Power MOSFET 600 V FDmesh II series 3 kW PV inverter

35 kHz phase shift modulation

Anti-islanding

MPPT

High efficiency: >95%

FDmesh II with integrated fast-recovery diode specifically targetedfor ZVS converters

STW55NM60ND for the best efficiency

3 kW PV inverter using FDmesh II power MOSFET series

PWM full-bridge inverter

Vgrid

D1

Llk LFTX

D2

M1 M3

M2 M4

M5

M6

Z1 Z3

Z4

LFVin

Z2

C1

C0

6 x STW55NM60ND4 x 600 V IGBT

Phase-shift controlled legs

FDmesh II MOSFETs for 3 kW PV inverters

DC-DC converter in best conditions is able to maintain efficiency well above 97% over a wide range of handled power

DC/DC Converter Efficiency

0.92

0.93

0.94

0.95

0.96

0.97

0.98

0 500 1000 1500 2000 2500 3000

Output Power [W]E

ffici

ency 200V

300V

390V

Overall system efficiency in best conditions is higher than 95% over a wide range of handled power

The latest high-voltage power MOSFET family

MDmesh series: continuous improvement

2006

MDmesh/FDmesh II - 45%MDmesh/FDmesh II - 45%

2000

MDmesh/FDmeshMDmesh/FDmesh

2009

MDmesh/FDmesh V - 65%MDmesh/FDmesh V - 65%

RDS(on) x area [normalized]

650 V MDmesh V: best RDS(on)*area

MDmesh V is the latest HV power MOSFET family belonging to the super-junction subcategory of devices

650 V devices with the best known RDS(on)

available in the most popular packages

targeted for best efficiency solar converters

FDmesh II MOSFETs for 3 kW PV inverters

Efficiency in a 3 kW boost converter using STW77N65M5 is above 99 % in the best working condition

Efficiency of 3 kW boost solar circuit mounting

STW77N65M5

94.6%

95.6%

96.6%

97.6%

98.6%

99.6%

100.6%

200 700 1200 1700 2200 2700 3200

Watt

STW77N65M5 aVin=340V

STW77n65M5 aVin=300V

STW77N65M5 aVin=200V

STW77N65M5 aVin=150V

MDmesh V extending to medium voltage

VDS(V)

Part numberRDS(on)

(mΩ)Package Application

650 STY112N65M5 22 Max-247 PV inverter (400 V DC bus)

650 STW77N65M5 38 TO-247 PV inverter (400 V DC bus)

650 STW60N65M5 57 TO-247*/TO-3PF* PV inverter (400 V DC bus)

650 STx42N65M5 79TO-220/TO-T20FP/

D2PAK/I2PAK/TO-247PV inverter (400 V DC bus)

250 STB50N25M5 65 D2PAKPV micro inverter (110 V

mains)

200STP80N20M5 20 TO-220*/D2PAK*

PV micro inverter (110 V mains)

*Coming soon

SuperMESH 5 900 to 1200 V MOSFET series

2007

SuperMESH3-30%SuperMESH3-30%

2001

SuperMESHSuperMESH

2009

SuperMESH 5-70%SuperMESH 5-70%

STP21N90K5: best RDS(on) in TO-220

RDS(on) x area [normalized]

1500 V MOSFET series for 3-Ф aux. SMPS

1500 V series by power range

From 5 W to 25 W: STx3N150in TO-3PF/ T0-247/TO-220

From 25 W to 50 W: STx4N150in TO-3PF/T0-247/TO-220

Higher power rating: STW9N150 2.5 Ω, 8 A

Enabling more efficient solutions

The ideal switches for solar inverters

New HF IGBT technology Advanced planar technology – double drift layer Improved VCE(sat) / Eoff trade-off Tight parameter distribution

New ultra-fast 600 V HF IGBTs, W series Extremely fast turn-off Switching frequency over 100 kHz

New very low drop 600 V IGBTs, XS series Enlarges previous S series benefits Lower VCE(sat)

New technologies to match the target

Lower switching losses

Tighter variation of switching energy (Eoff) versus temperature

Reduced overall power losses

Reliable high-frequency operation

Lower conduction losses

High reliability

Ultra-fast or SiC co-pack diode

Maximized efficiency in mixed-frequency converters

HF W series features and benefits XS and S series features and benefits

Ideal combo for mixed-frequency converters

Part numberIC @

100 °C (A)

VCE(sat)

@ VGE= 15 V (V)

Switching frequency

(kHz)

Anti-parallel diode

Package

STGF19NC60WD 19 2.1 Up to 70 Yes TO-220FP

STGP19NC60W(D) 22 2.1 Up to 70 No (Yes) TO-220

STGW19NC60W(D) 23 2.1 Up to 70 No (Yes) TO-247

STGW35HF60WD 35 1.9 Over 100 Yes TO-247

STGW45HF60WD* 45 1.9 Over 100 Yes TO-247

* Coming soon

IGBT ultra-fast W series

Part numberIC @

100 °C (A)

VCE(sat)

@ VGE= 15 V (V)

Anti-parallel diode

Package

STGF20NB60S 13 1.25 @ Ic = 20 A No TO-220FP

STGW35NB60S(D) 35 1.25 @ Ic = 20 A No (Yes) TO-247

STGW50NC60XSD 50 1.1 @ Ic = 30 A Yes – Ultra fast TO-247

STGW50NC60XSCD* 50 1.1 @ Ic = 30 A Yes - SiC TO-247

* Coming soon

IGBT very low drop S and XS series

Ideal combo for mixed frequency Example 1

High-frequency leg Low-frequency leg

Ultra-fast IGBT W series with ultra-fast or SiC anti-parallel

diodes

XS or S low drop IGBT series with

standard anti-parallel diode

MDmesh + Schottky + ultra-fast or SiC anti-parallel diode

MDmesh

Topology: Full-bridge mixed frequency

High-frequencyleg

Low-frequencyleg

High side Low side

Ultra-fast IGBT W series and fast anti-parallel diode

XS or S low drop IGBT series with ultra-fast or SiC anti-parallel diodes

Topology: Full-bridge mixed frequency

Low drop IGBT

Fast IGBT

High-frequencylow side

Low-frequencyhigh side

Ideal combo for mixed frequency Example 2

Inner switches Outer switchesClamp diodes, D5

and D6

XS or S low drop IGBT series and standard anti-parallel diode

Ultra-fast IGBT W series with ultra-fast

anti-parallel diodeUltra-fast or SiC diodes

XS or S low drop IGBT series and

standard anti parallel diode

MOSFETs – Fast diode

Ultra-fast or SiC diodes

Topology: Three level

Low drop IGBT

Fast IGBT

Fast IGBT

Low drop IGBT

Ideal combo for mixed frequency Example 3

Enabling more efficient solutions

Emitter switched bipolar transistors

Innovative devices for the best efficiency

ESBT features High-voltage and high-current capability Easy-to-drive gate structure Lower losses compared to IGBTs

Application benefits Increased efficiency (> 1% in a 15 kW system) Increased switching frequency of the converter, reducing the size of passive components Measurements with 15 kW 3-phase solar inverters with an ESBT/IGBT boost stage show the benefit of ESBT over IGBT

The ideal switch

• Low switching frequency due to base recombination of minority carriers

• High driving current

Weakness

• High switching frequency

• Easy to drive Strength

Power

bipolar

Power

MOSFET

ESBT

. The emitter-switching concept improves the trade-off between switchingand conduction losses mainly in high-voltage applications.

• Low VCESAT even for high-voltage breakdown (low conduction losses)

• High current capability even for high-voltage breakdown

• Very high breakdown voltage

Strength

• High RDS(on) for high-voltage breakdown

• Low current capability for high-voltagebreakdown

Weakness

ESBT driving network

The suggested driving network for full compatibility with a standard 3-pin voltage-driven device.

ESBT versus IGBT

Advantages Drawbacks

• Much lower Vcs sat or Vce sat

• Driving circuit more sophisticated

• Lower turn-on losses• Lower turn-off losses

• Higher static driving losses

Ic [

A]

Eoff

0

200

400

600

800

1000

1200

1400

1600

1800

0 1 2 3 4 5 6 7

Output Power [kW]

Energ

y [

uJ]

IGBT - Trench Field Stop

IGBT - NPT

ESBT

0 1 2 3 4 5 6 7

Eon

0

200

400

600

800

1000

1200

1400

Output Power [kW]

Ene

rgy

[uJ]

IGBT - Trench field stop

IGBT - NPT

ESBT

Output characteristics

Tj = 125°C

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5 3 3.5

Vce [V]

ESBT

IGBT - NPT

IGBT - Trench Field Stop

Solar inverter setup for evaluation of the performance gain

Two identical 15 kW solar inverters with ESBT or IGBT boost stage

Input current up to 40 A

High-efficiency three-level technology AC stage in IGBT technology

ESBT versus IGBT

Solar inverter efficiency and losses compared for ESBT and lGBT

ESBT boost stage efficiency gain of 0.7 % is approved

Reduced losses of up to 70 W by using ESBTs

Reduced cooling requirements with ESBT usage

ESBT versus IGBT