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Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm...

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Michael Spaid Cambrios Technologies Corpora5on September 21, 2011 9/27/11
Transcript
Page 1: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Michael  Spaid  Cambrios  Technologies  Corpora5on  

September  21,  2011  

9/27/11   1  

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Cambrios  Introduc5on  

•  Venture  funded  company  located  in  Sunnyvale  

•  40  people,  mostly  scien5sts/engineers  

•  Focused  on  one  innova5ve  material  for  more  than  5  years  

•  2  product  families  for  1st  market  (touch):  – ClearOhm™  Coated  Film  

– ClearOhm™  Ink  

•  Commercial  products  in  the  market  2  9/27/11  

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Cambrios  Technologies  Corpora5on  

9/27/11   3  

Cambrios  Technologies  Corp.  Sunnyvale  CA  

Cambrios  Technologies  K.K.  Tokyo  Japan  

Page 4: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Cambrios’  Products  

•  ClearOhmTM  Coa5ng  Materials  – Manufactured  in  Sunnyvale  

•  ClearOhmTM    Conduc5ve  Film  – Coated  in  Japan  

9/27/11   4  

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ClearOhm™  Coa5ng  Material  

•  Wet  coatable  dispersion  of  high  aspect  ra5o  metallic  nanostructures  

•  Compe55ve  op5cal  &  electrical  proper5es  as  compared  to  commercial  spuSered  conduc5ve  oxides    –  From  <10  ohms/square  to  300  ohm/square  

•  Low  processing  temperature  –  Compa5ble  with  most  substrates    

•  PET,  Polycarbonate,  PEN,  glass,  others  

•  Suitable  for  use  on  exis5ng  produc5on  equipment  –  Roll-­‐to-­‐roll  coa5ng  or  sheet  coa5ng  

9/27/11   5  

Page 6: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Transparent  Conductors  are  Everywhere  Today  

9/27/11   6  

Page 7: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Large  New  Markets  for  Transparent  Electrodes  

9/27/11   7  

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Cambrios  Opportunity  

9/27/11   8  

A  NEW  TYPE  OF  TRANSPARENT  CONDUCTIVE  MATERIAL  

LARGE  EMERGING  APPLICATIONS  CURRENT  FACILITY  CAN  SERVE  WHOLE  CONSUMER  ELECTRONICS  CATEGORIES  

Poten=al  to  produce  30,000,000  m2  coatable  material  in  5,000  sf  manufacturing  facility  

A  HUGE,  EXISTING  MARKET  FOR  A  SINGLE  MATERIAL  TYPE  

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Commercial  Priori5es  

•  Consumer  Electronics  – Touch  Panel  – LCD  – OLED  Display  

•  Cleantech  – OLED  Ligh5ng  – Thin  Film  Photovoltaics  

9/27/11   9  

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Technology  

9/27/11   10  

Page 11: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

ClearOhmTM  Layer  Structure  

Substrate  

1.  Coat  nanowire  layer  2.  Coat  overcoat  (op5onal,  applica5on  dependent)  

9/27/11   11  

Page 12: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Nanowire  Surface  Concentra5on  Determines  Sheet  Resistance  

15  Ohms/sq.  50  Ohms  /  sq.  

 Higher  Nanowires  Surface  Concentra5on  =  Lower  Sheet  Resistance  

*  %  Total  forward  transmission,  glass  as  reference  

9/27/11   12  

Page 13: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Engineered  Nanostructures:  Control  over  Material  Proper5es  

Independent  process  control  of  nanowire  length  and  diameter  

Lower  haze  Higher  haze  

9/27/11   13  

Page 14: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

ClearOhm™  Film:  A  BeSer  Transparent  Electrode    

14  

•  Vola5le  commodity  •  BriSle,  cracking  problems  • Weakly  conduc5ve  •  Expensive  material  •  Requires  Index  matching  •  Requires  High  Temperature  to  crystallize  •  Expensive  to  paSern  

•  Silver:  common  electronic  material  •  Completely  bend-­‐able  film,  ,  no  cracking,  high  manufacturing  yield  • Most  conduc5ve  metal;  crystalline  •  1%  surface  coverage  •  Deposited  by  wet  coa5ng  •  Etch,  Transfer,  or  Print    

ITO   ClearOhm™  Film  

9/27/11  

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ClearOhmTM  Film  Manufacturing  Process  

•  ClearOhmTM  film  is  created  by  a  roll-­‐to-­‐roll  wet  coa5ng  process  

•  Process  temperatures  are  <  120C  

9/27/11   15  

Mul$%Zone*Dryer**

Unwind*

Rewind*

Slot%Die*PET*Nanowire*Film*

Mul$%Zone*Dryer**

UV*cure*

Unwind*

Rewind*

PET*Nanowire*film*Overcoat* Slot%Die*

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Op5cal  Performance:  Transmission  

9/27/11   16  

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Op5cal  –  Electrical  Performance:  Haze  

G4  is  Cambrios’  most  op5cal  clear  material  

9/27/11   17  

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Op5cal-­‐Electrical  Performance:  Color  

G4  ClearOhmTM  Ink  has  a  more  neutral  color  rela5ve  to  G2  &  G3  

Results  on  Eagle  2000  glass,  reference  b*  =  0.34  

G2  G3  G4  

9/27/11   18  

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Op5cal  Proper5es:  Color  

9/27/11   19  

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ClearOhmTM  Film  Greatly  Reduces  Cracking  

9/27/11   20  

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ClearOhmTM  Film  Specifica5on  vs.  ITO  

ClearOhm  ITO   ClearOhm   ITO   ClearOhm  ITO  Resistance  (Ω/sq.)   250   270   130   150   80   NA  %  Transmission   92.4   90.8   92.3   90.8   92.1  %  Haze   0.6   0.7   0.7   0.7   0.9  yellowness  (b*)   0.9   2.5   1.2   2.2   1.5  Cracking   Pass   Fail   Pass   Fail   Pass  Reliability   Pass   Pass   Pass   Pass   Pass  

9/27/11   21  

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Commercial  Progress  

9/27/11   22  

Page 23: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Smart  Phones  on  the  Market  with  ClearOhmTM  Material  

23  9/27/11  

Page 24: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Sensor  Makers  &  Chip/Module  Makers:  Early  Adopters  

9/27/11   24  

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ClearOhmTM  Enabled  Func5onal  Films  

9/27/11   25  

Page 26: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

ClearOhmTM  Film  Reliability  

9/27/11   26  

Page 27: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Reliability:  ClearOhmTM  G4  Film  

9/27/11   27  

Recent  customer  film  qualifica5on  Bare  film  results  –  no  encapsula5on  in  the  device  stack  

50  um  PET  

ClearOhmTM  Layer  at  ~250  ohm/sq.  

Page 28: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Ag  Paste  Reliability  Simulated  Devices  

9/27/11   28  

Schema5c  of  the  Ag  paste  contact  

Top  View  

Cross  Sec5on  

50  um  PET,  F090716-­‐06  (O-­‐35-­‐39)  Toyobo  250-­‐5  Paste  With  laminate,  MD  

PaSerned  line  reliability  in  the  laminate  structure  is  excellent  

Results  on  50  um  PET  ClearOhmTM  Film  

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PaSerning  Methods  

9/27/11   29  

Page 30: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

PaSerning  ClearOhmTM  Film  

9/27/11   30  

Fully  Developed   In  Development  

Page 31: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Wet  Etching  ClearOhmTM  Film  •  Photoresist  or  screen  printable  

resist  is  applied  to  the  ClearOhmTM  film  to  protect  the  conduc5ve  regions  

•  The  etching  solu5on  penetrates  the  overcoat  layer  and  etches  the  nanowires  –  The  etch  rate  is  typically  very  slow  

at  room  temperature  –  Faster  etch  rates  are  achieved  at  

higher  temperature  •  The  etchant  is  removed  from  the  

overcoat  aqer  rinsing  with  DI  water  

•  The  reliability  of  the  etched  paSern  aqer  this  process  is  excellent  

9/27/11   31  

PET  

Overcoat  

Nanowires  

PET  

Resist  

PET  

Etchant    1.  Penetrates  overcoat  2.  Etches  nanowires  

PET  Rinse  &  strip  resist  

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Wet  Etching:    Full  Etch  and  “Par5al  Etch”  

9/27/11   32  

With  full  etch,  nanowires  are  completely  removed.  

With  par5al  etch,  cuts  made  in  nanowires.    Wires  stay,  but  the  material  is  non-­‐conduc5ve.  

ClearOhmTM  Film  Before  Etch  

ClearOhm™  Film  

PET  

Full  etch  process   Par5al  etch  process  

Page 33: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Low  Visibility  PaSern:  Par5al  Etch  Process  

•  For  projec5ve  capaci5ve  touch  panel  applica5ons,  low  visibility  transparent  conduc5ve  paSerns  are  essen5al  

•  In  the  non-­‐conduc5ve  region,  the  nanowires  are  cut  into  smaller  segments  

•  Compa5ble  with  coarse  paSerning  methods,  e.g.  screen  prin5ng  

9/27/11   33  

Etched      Unetched  

Nanowires  are  cut  into  disconnected  segments  

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Photo-­‐paSerning  on  Glass  Substrates  

9/27/11   34  

Coat  Metallic  Nanostructures  

Soq  Bake  

Standard  PhotopaZerning  Process  

Overcoat  

Hard  Bake  

DI  Rinse  /  Dry  Standard  Photolithography  Process  5  micron  resolu=on  demonstrated  Gen  II  glass  (37  x  47  cm)  

Page 35: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Laser  PaSerning  ClearOhmTM  Film  

9/27/11   35  

•  Op5mum  power  –  Invisible  PaSern  

•  No  damage  to  PET  

–  Complete  electrical  isola5on  

•  High  Power    Visible  PaSern  

-  Damage  to  PET  

  Complete  electrical  isola5on  

Page 36: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

ClearOhmTM  Material  TFT-­‐LCD  Displays  (Under  Development)  

9/27/11   36  

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DNS  Gen  5  Coa5ng  Trials  

SK  Series  Capable  of  processing  4th-­‐  to  8th-­‐genera5on  substrates  

Linearcoater®    

1.1  m  x  1.25  m  x  0.7  mm  ~10%  Nonuniformity  ~30  Ω/    

9/27/11   37  

Page 38: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Voltage-­‐Transmission  Curves  TN  Type  LCD  Cells  

9/27/11   38  200X  Microscope  Image  

Page 39: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Conformal  Via  Contact  

9/27/11   39  

TFT  (boSom  gate,  back  channel  etched)  

ITO  

SiNx  

Drain  Source  

Page 40: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

TFT-­‐LCD  Display  Demonstra5on*  

4.1”  QVGA  TFT-­‐LCD  Display  with  ClearOhmTM  Pixel  Electrode  

*Fabricated  by  TTLA,  Hsinchu,  Taiwan  

9/27/11   40  

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OLED  Ligh5ng  

9/27/11   41  

Page 42: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Gravure-­‐Printed  Anode  for  OLED  

Prin5ng  and  device  manufacture  performed  at    VTT  Technical  Research  Center  of  Finland  (Dr.  Riikka  Suhonen)  

9/27/11   42  

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9/27/11   43  

Page 44: Bay Area SID Talk September 2011 published Chapter/PDF and Images... · WetEtching(ClearOhm TMFilm • Photoresist(or(screen(printable(resistis(applied(to(the(ClearOhmTM(film(to(protectthe(

Op#cal  Characteriza#on  

lines  down  to  0.3mm  width  

openings  down  to  0.9mm    

9/27/11   44  

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Printable  Demonstra5ons  

9/27/11   45  

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Printable  ClearOhmTM  Ink:  Feasibility  Established  

•  Ink-­‐jet  •  Screen  Prin5ng  •  Gravure  Prin5ng  •  Reverse  Offset  Prin5ng  

9/27/11   46  

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Summary:  Cambrios  2011  

•  Commercial  li]off:  products  for  mul5touch  –  First  consumer  electronic  product  launch  in  1Q2011  

•  Visibility  on  growth  in  other  applica=ons  –  LCD,  OLED,  PV  

•  New  standard  in  transparent  electrodes  –  Large  exis5ng  market  with  needs  for  a  beSer  solu5on  

–  Rapidly  emerging,  huge  new  market  categories  

9/27/11   47  


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