TIP41/TIP41A/TIP41B
/TIP41C —
NPN
Epitaxial Silicon Transistor
© 2TIP
July 2008
TIP41/TIP41A/TIP41B/TIP41CNPN Epitaxial Silicon Transistor
Features• Complementary to TIP42/TIP42A/TIP42B/TIP42C
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C
40 60 80100
VVVV
VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C
40 60 80100
VVVV
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1. Base 2. Collector 3. Emitter
008 Fairchild Semiconductor Corporation www.fairchildsemi.com41/TIP41A/TIP41B/TIP41C Rev. A 1
TIP41/TIP41A/TIP41B
/TIP41C —
NPN
Epitaxial Silicon Transistor
© 2TIP
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage: TIP41: TIP41A: TIP41B: TIP41C
IC = 30mA, IB = 0
40 60 80100
VVVV
ICEO Collector Cut-off Current: TIP41/41A: TIP41B/41C
VCE = 30V, IB = 0 VCE = 60V, IB = 0
0.7 0.7
mAmA
ICES Collector Cut-off Current: TIP41: TIP41A: TIP41B: TIP41C
VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0
400400400400
μAμAμAμA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A
3015 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA, f = 1MHz 3.0 MHz
008 Fairchild Semiconductor Corporation www.fairchildsemi.com41/TIP41A/TIP41B/TIP41C Rev. A 2
TIP41/TIP41A/TIP41B
/TIP41C —
NPN
Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.comTIP41/TIP41A/TIP41B/TIP41C Rev. A 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 100001
10
100
1000
VCE = 4V
h FE,
DC
CU
RR
ENT
GAI
N
IC[mA], COLLECTOR CURRENT
1 10 100 1000 1000010
100
1000
10000
IC/IB = 10
VCE(sat)
VBE(sat)
V BE(
sat),
VC
E(sa
t)[m
V],
SA
TUR
ATI
ON
VO
LTA
GE
IC[mA], COLLECTOR CURRENT
1 10 1000.1
1
10
100
TIP41C VCEO MAX.TIP41B VCEO MAX.TIP41A VCEO MAX.TIP41 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
I C[A
], C
OLL
ECTO
R C
UR
REN
T
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 1750
20
40
60
80
100
P C[W
], P
OW
ER
DIS
SIP
ATI
ON
TC[oC], CASE TEMPERATURE
TIP41/TIP41A/TIP41B
/TIP41C —
NPN
Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.comTIP41/TIP41A/TIP41B/TIP41C Rev. A 4
Mechanical Dimensions
TO220
TIP41/TIP41A/TIP41B
/TIP41C N
PN Epitaxial Silicon Transistor
TIP41/TIP41A/TIP41B
/TIP41C
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.comTIP41/TIP41A/TIP41B/TIP41C Rev. A 5
