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BOB ZenerDiodes for ESD/EOS Protection SBS...ESD Protecting Diode 3. Species of Zener Diodes 6....

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BOB SBS TGS Zener Diodes for ESD/EOS Protection 4. GaN-based LEDs need ESD/EOS Protection 1. Basic Functions of Zener Diode GaN Epi Structure ESD damaged LEDs ESD Endurance Dead & Degraded LEDs by ESD Strike ESD/EOS : 38 % Fabrication : 26 % Assembly : 14 % Mobile Ion : 3 % Good : 4 % Unknown: 15 % 10 -3 10 -2 10 -1 RT 120 °C Zener voltage (Vz ) Leakage current (I leak @ -4 V) ESD strength (> ±8 kV) Current drivability (>100 mA) Temperature coefficient (ΔVz/ΔT < a few mV/K) Zener breakdown - Tunneling probability(Θ) - Tunneling current(J n ) J n =qv R n Θ v R : Richardson velocity Key Device Parameters = Θ ε 2 3 * 2 3 4 exp g E q m h 60 80 100 2. ESD/EOS Models and Standards 5. Configuration for LED Protection -10 -8 -6 -4 -2 0 2 4 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 150 °C 180 °C Current (A) Voltage (V) I leak Tunneling Rz Vz -10 -8 -6 -4 -2 0 2 4 -100 -80 -60 -40 -20 0 20 40 60 Current (mA) Voltage (V) HBM MM IEC61000-4-2 : HBM + CDM IEC61000-4-4 : EFT Strong Transient Voltage (ESD, Surge, EFT) Weak Clamped Voltage Reverse Forward Bypass Excess Current Circuit /Device to protect V P ~ ±8 kV V C <~ 20 V Light emitting chip ESD Protecting Diode 6. Effective Protection of GaN-based LEDs 3. Species of Zener Diodes IEC61000-4-5 : Lightning Surge CDM Single Chip Dual Pad Series Connection (Cathode to cathode) LED Zener Single Chip Dual Pad Series Connection (Anode to Anode) Zener LED Single Chip Dual Pad Parallel Connection Zener LED General Connection of Zener Diode with LED chip Zener LED Double Pad Structure Single Pad Structure N-Substrate P + P + P-Substrate N + N + N-Substrate P + P-Substrate N + Triple Pad Structure Unidirectional 10 -5 Room Temp. 10 -1 ESD(HBM) Strength LED only : ±0.3 ~±7 kV LED+Zener : > ±8 kV P-Substrate N + N + N + N-Substrate P + P + P + P-Substrate P + N - N-Substrate N + P - Triple Pad Structure Bidirectional 0 1 2 3 4 5 6 7 8 9 10 -9 10 -8 10 -7 10 -6 Reverse Voltage 5 V 6 V 10 V Reverse Leakage Current (A) ESD Voltage (kV) Before ESD Zap with Zener diode ESD ±8kV, 5 times without Zener diode -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 25 °C 70 °C 110 °C ESD : ± 8.0 kV, 5 times Current (A) Voltage (V) LED+Zener LED only Various Applications 2008~2010 A Company of Faith and Modesty Sigetronics, Inc. http://www.sigetronics.com Various Applications
Transcript
Page 1: BOB ZenerDiodes for ESD/EOS Protection SBS...ESD Protecting Diode 3. Species of Zener Diodes 6. Effective Protection of GaN-based LEDs CDM IEC61000-4-5 : Lightning Surge Single Chip

BOBSBSTGS

Zener Diodes for ESD/EOS Protection

4. GaN-based LEDs need ESD/EOS Protection1. Basic Functions of Zener Diode

GaN Epi Structure ESD damaged LEDs ESD Endurance

Dead & Degraded LEDs by ESD StrikeESD/EOS : 38 %Fabrication : 26 %

Assembly : 14 %

Mobile Ion : 3 %Good : 4 %

Unknown: 15 %

10-3

10-2

10-1

RT 120 °C

Zener voltage (Vz )Leakage current (Ileak @ -4 V)ESD strength (> ±8 kV)Current drivability (>100 mA)Temperature coefficient (ΔVz/ΔT < a few mV/K)

Zener breakdown

- Tunneling probability(Θ)

- Tunneling current(Jn)

Jn=qvRn ΘvR: Richardson velocity

Key Device Parameters

⎟⎟⎟

⎜⎜⎜

⎛−=Θ

ε

23

*234exp gE

qmh

60

80

100

2. ESD/EOS Models and Standards 5. Configuration for LED Protection

-10 -8 -6 -4 -2 0 2 410-12

10-11

10-10

10-9

10-8

10-7

10-6

10-5

10-4 150 °C 180 °C

Cur

rent

(A)

Voltage (V)

Ileak

Tunneling

Rz

Vz

-10 -8 -6 -4 -2 0 2 4-100

-80

-60

-40

-20

0

20

40

60

Cur

rent

(mA

)

Voltage (V)

HBM

MM

IEC61000-4-2 : HBM + CDM

IEC61000-4-4 : EFT

Strong TransientVoltage(ESD, Surge, EFT) Weak

Clamped Voltage

Reverse

Forward

BypassExcessCurrent

Circuit/Deviceto protect

VP ~ ±8 kVVC <~ 20 V

Light emitting chip

ESD Protecting Diode

6. Effective Protection of GaN-based LEDs3. Species of Zener Diodes

IEC61000-4-5 : Lightning SurgeCDM

Single Chip DualPad Series Connection(Cathode to cathode)

LED

Zener

Single Chip DualPad Series Connection(Anode to Anode)

Zener

LED

Single Chip DualPad Parallel Connection

Zener

LED

GeneralConnection of ZenerDiode with LED chip

Zener

LED

6 Effective Protection of GaN based LEDs3 Species of Zener Diodes

Double Pad StructureSingle Pad Structure

N-Substrate

P+ P+

P-Substrate

N+ N+

N-Substrate

P+

P-Substrate

N+

Triple Pad Structure

Unidirectional

10-5

Room Temp. 10-1

ESD(HBM) Strength

LED only : ±0.3 ~±7 kV

LED+Zener : > ±8 kV

P-Substrate

N+ N+N+

N-Substrate

P+ P+P+

P-Substrate

P+

N-

N-Substrate

N+

P-

Triple Pad StructureBidirectional

0 1 2 3 4 5 6 7 8 910-9

10-8

10-7

10-6

Reverse Voltage 5 V 6 V 10 V

Rev

erse

Lea

kage

Cur

rent

(A)

ESD Voltage (kV)

BeforeESD Zap

with Zener diodeESD ±8kV, 5 times

without Zener diode

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 410-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

25 °C 70 °C 110 °C

ESD : ± 8.0 kV, 5 times

Cur

rent

(A)

Voltage (V)

LED+ZenerLED only

Various Applications

2008~2010 A Company of Faith and Modesty Sigetronics, Inc. http://www.sigetronics.com

Various Applications

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