© 2005 ASM
Breakthrough Technologies: From R&D to Manufacturing
Ivo RaaijmakersCTO Front-end Operations and Director of R&D
Semicon West, San Francisco, July 18, 2007
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 2
ASM Front-end R&D InvestmentsThrough good Years and bad Years…
• Average R&D intensity over the five year period 2002-2006 is 19%, up from 16% in the previous five year period
• Industry averages are around 17% for 2002-2004 period, up from about 15% for the 1997-2001 five year period(1)
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&E
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RD&E
(1) Semi White Paper, October 2005
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 3
ASM has created a powerful IP Portfolio
• Since 2002, 80 – 100 original inventions are filed per year• Best in class in terms of the number of issued patents per
invested R&D dollar
0
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ear-
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First Filed Patents per Year
Front-End Operations
© 2005 ASM July 18, 2007 4
ASM has created a powerful IP PortfolioNot only in Quantity but also in Quality
• ASM shares a position in the “top 10 patent companies” (as determined by IEEE Spectrum), all of whichare >10 times the size of ASM
• Many fundamentalpatents in important growth areas, includingAtomic Layer Deposition, epitaxy and plasma processing
• Large future revenuepotential in core and non-core markets
IEEE Spectrum, November 2006
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 5
Product Lines are the Gateways between ASM Technology and our Customers
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace
RTPProducts
CorporateR&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Polygon, Epsilon, Levitor, Eagle, and Dragon are registered ASM owned trademarks. A400, A412, PEALD and ALCVD are our trademarks
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 6
Transistor Products (TP)Polygon® and Pulsar®
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace
RTP Products
CorporateR&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 7
Early Investments in ALCVD™ High-k Gate Stacks: 1999 - 2002
ASM Proprietary and Confidential Information
ASM International
© ASM International 2000 IJR 07/03/2007/1 ®
ASM Microchemistry
• Suntola invented Atomic Layer CVD (ALCVD), then called Atomic Layer Epitaxy (ALE); basic patents issued in 1977 - 1983.
• Microchemistry was founded in 1987. Location: Espoo(close to Helsinki)
• Microchemistry was acquired in July 1999 fromFortum and is now ASM Microchemistry
• Size: ≈ 50 people, of which 15 in R&D, 10 in engineering
• Installed base: ≈ 25 systems; mainly R&D and FPD• Good fit to ASM: CVD, next generation technology1999
ASM Proprietary and Confidential Information
ASM International
Copyright © ASM International N.V. 2000IJR 07/03/2007/21
®
C.M.Perkins et al., Semiconductor Research Corporation Fellowship Meeting, Austin, Sebtember 1999
ALCVD ZrO2/NH3/Cleaning Oxide/Si
• Nitridation improves Performance of the Gate Stack (Lower EOT, Lower Leakage)
• End-structure has 1.3 nm Interfacial Silicate/Oxynitirde (EOT 1.4 nm)
Copyright © ASM 2002 Single Wafer RTCVD /49
Confidential and Proprietary Information
FRONT-END OPERATIONS
Metal Gates: ALCVD WCN and TiN on ALCVD HfO2
2002
Acquisition of Microchemistry
First Atomically Engineered High-k
GatestacksFirst High-k/Metal
Gatestacks
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 8
ALCVD™ High-k Gatestacks: 45 nm Production Technology
Polygon® 8300300/200mm Cluster
Pulsar® 3000ALD Reactor
EmerALD™ 3000PEALD™ Reactor
High-k Dielectric
Metal Electrode
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 9
ALCVD™ High-k Gatestacks: 45 nm Production Technology
• Excellent repeatability, and consistently low particle adders assure high yield
• ASM’s Pulsar is the only reactor today with a reliable solid source for HfCl4 based ALCVD chemistries
0 500 1000 1500 2000 2500 3000 3500Wafers Processed
Thic
knes
s, N
on-u
nifo
rmity
or
Par
ticle
Add
ers
Thickness Repeatability
Uniformity Repeatability
Particle Adders
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 10
ALCVD™ High-k Gatestacks and Metal GatesReady for the Future
ALD HfO2 (2nm) +PEALD TiN (5nm)
5 nm
SiON
PEALD TiN
Swerts, ALD Conference (2006)
• Conformality for both dielectric and metal will be a requirement for 3D devices
• ALCVD is the only realistic option
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 11
Capacitor Products (CP)Stellar™
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace RTPCorporate
R&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 12
Early Investments in PEALD™
2002 - 2004
Strictly for ASM Internal Use
Front-End Operations
Copyright © ASM International N.V. 2002 IJR 07/03/2007/24
®
Genitech, Inc.Daejon, South Korea
• Supplier of Plasma Enhanced ALD equipmentHigh quality films at lower temperatures & from a larger varietyof precursorsBarrier layers & certain dielectric films
• Superfill CVD™ processPreferential deposits inside small featuresSeed layers for copper electroplating
• Exclusive technology, marketing, license and OEM agreement
Genitech sells combined technology in KoreaASM sells combined technology everywhere else2002
Strictly for ASM Internal Use
Front-End Operations
Copyright © ASM International N.V. 2002 IJR 07/03/2007/34
®
Genitech PEALD Reactor
Front-End Operations
© 2005 ASM 07/13/2005ASM Proprietary Information 20
Polygon: PEALD for RF/AMSRF and Decoupling Capacitors
AHA MIM Capacitors
1.E-091.E-081.E-071.E-061.E-051.E-041.E-031.E-021.E-011.E+00
0 2 4 6 8 10 12 14
Capacitance Density (fF/um2)
Leak
age
Cur
rent
(A
/cm
2)
ALDPEALD
• Low temperature process for all BEOL insertions• Wide range of capacitance densities• Low leakage PEALD™ films (compared to ALD)2004
Acquisition of Genitech
Demonstrated advantagesof PEALD for some Applications
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 13
Stellar™ 3000: World’s first PEALD™
System. Introduced Dec 2006
• Advanced Plasma- Enhanced ALD (PEALD) for high-k capacitors
• Dielectrics• Metal electrodes
• Two parallel single wafer reactors• Choice of Lateral Flow or Showerhead
Flow designs in the same platform• High throughput and small foot
print• Designed for low CoO, high volume
manufacturing
Matching Network
inlet
Showerhead electrode
Heater Wafer
outlet
Matching Network
inlet
Showerhead electrode
Heater Wafer
outlet
inlet outlet
electrode
Heater
distrib
Matching Network
Plasma
inlet outlet
electrode
Heater
distrib
Matching Network
Plasma
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 14
Stellar™ 3000: Target Applications
• BEOL MIM Capacitors• RF MIM capacitors• Decoupling MIM capacitors• eDRAM
• High-k for LCD• High-k for CMOS Image Sensors• DRAM high-k dielectrics
MIM Capacitor eDRAM CIS
Al Al
AlM - Electrode
M - ElectrodeAl V
ia
Via
I - Dielectric
Al Al
AlM - Electrode
M - ElectrodeAl V
ia
Via
I - Dielectric
YearM
arke
t Siz
e
DRAM
Hi-k Gate
PEALD
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 15
Vertical Batch Furnace (VF)A400™ and A412™
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace RTPCorporate
R&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 16
A412™: Productivity and InnovationAlmost Tripled VF Revenue in last 5 years
24 hrs
Waf
ers
Out
in o
ne D
ay
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube ATube B
Tube ATube B
150
300
900
600
1200
1500
1800
2100
24 hrs
Waf
ers
Out
in o
ne D
ay
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube ATube B
Tube ATube B
150
300
900
600
1200
1500
1800
2100
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube ATube B
Tube ATube B
150
300
900
600
1200
1500
1800
2100
Innovation• Furnaces are NOT old
technology• 2002-2005: addition of LT
processes• 2006-2010: addition of
ALCVD processes• Platform Roadmap (COO,
CT, performance,…)
AB
A412 Application Space
0
5
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20
25
30
35
2002 2006 2010Year
Num
ber o
f App
licat
ions Low Pressure Processes
Atmosheric Processes
Productivity• One A412 = upto 60 kwpm
(2.5 hr process, 90% available, 150 wafer boat)
• About 40% lower capexper m2 as competitors
• Dual boat/dual reactor system
• Large global installed base and support organization
Front-End Operations
© 2005 ASM July 18, 2007ASM and UoH Proprietary Information 17
Early Investments in New Chemistry Developments – Patents Issued
ASM Proprietary and Confidential Information
ASM International
Copyright © ASM International N.V. 2000IJR 07/05/2007/43
®
XTEM of ALCVD ZrO2 on HSG
100% Step Coverage
ASM Proprietary and Confidential Information
ASM International
Copyright © ASM International N.V. 2000IJR 07/05/2007/45
®
Mikko Ritala et al: ATOMIC LAYER DEPOSITION OF HIGH-k OXIDES, ECS 2000
ALCVD™ of SrTiO3Step Coverage
• 325 C Deposition Temperature
• Step Coverage close to 100%2000
20032006
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 18
A412™ Innovation: Improved High-k Capacitor Dielectric for DRAM
• Patented, thermally stable ALCVD chemistry and process
• Linear growth at 0.57 nm/cc:• 6 nm ZrO2 = 100 cycles
• Uniform deposition over batch• >95 % coverage in 1:40 AR trench• High t’put for low COO DRAM fabs
GPC
y = 0.57x + 5.8333
0
10
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30
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60
70
80
90
100
0 20 40 60 80 100 120 140 160
# cycles
Thic
knes
s (Å
)
Growth Per CycleTop
0.92% 1s; 62.1Å
Middle
0.95% 1s; 60.9Å
Bottom
1.36%1s;61.4Å
-200
-150
-100
-50
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Y-co
ord
-200-150-100 -50 0 50 100 150 200
X-coord
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ord
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-50
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ord
-200-150 -100 -50 0 50 100 150 200
X-coord
WTW: 1% 1s
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 19
A412™ Innovation: Silcore for Low Temp. Deposition of Thin Smooth Amorphous Silicon
• Possible Applications of thin smooth a-Si• Stacked gates for NVM• Quantum dot NVM• Hardmask for metal gate
Positive TOF-SIMS Imaging
0
500000
1000000
1500000
2000000
2500000
0 20 40 60 80 100
Film Thickness (A)
Inte
nsity
(cou
nts)
SiTi
ASM Proprietary and Confidential Information
Front-end Operations
Copyright © ASM International N.V. 2002 IJR 07/05/2007/42
®
New Technology RTCVDVery Smooth Si Layers on Oxide at 450C
2002
Single Wafer Feasibility
Batch Productivity
2007
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 20
Rapid Thermal Processing (RTP)Levitor®
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace
RTPProducts
CorporateR&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 21
Levitor® in Production Today in DRAM and Logic Fabs
• Emissivity independent • Demonstrated yield advantages
• More uniform spike anneal: less variability in transistor parameters
• Better control and process window for NiSi anneals (FuSi, Source/ Drain)
• Mature system and processes• System availablity >90%
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 22
Advantages of Conductive Heating (Levitor®) over Radiative Heating (Lamps)
-100 -50 0 50 100
-100
-50
0
50
100
113
117
121
125
129
133
137
141
145
149
153
157
161
165
169
173
-100 -50 0 50 100
-100
-50
0
50
100
5.48% 1σ 1.18% 1σ
Radiative heating180ºC/s
Conductive heatingLevitor ~ 300°C/s
90 95 100 105 110 115 120 125 130-10
-5
0
5
10
15
20
25
30
-125-120-115-110-105-100-95-90
-25
-20
-15
-10
-5
0
5
ΔT = 43°C ! ΔT < 1°C
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 23
Epitaxy Products Epsilon® 3x00 and 2x00
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace RTPCorporate
R&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM and TI Proprietary Information 24
Early Investments in Selective Epitaxial Technologies
ASM Proprietary and Confidential Information
ASM International
Copyright © ASM International N.V. 2000IJR 07/05/2007/6
®
ASMI Research and DevelopmentApplications driving ASM Technology - 2
• Shallow Junctions: scale S/D Junction Depth and Extrinsic Series Resistance
Elevated Source/Drain StructuresReduce Thermal Budget S/D activation, Spike Anneal
• HBT Transistors: increase Switching Speed with Low Cost, Manufacturing Worthy Processes
Mixed Deposition of SiGe, SiGe(C)Selective Epitaxial SiGe and SiGe(C)
Front-end Operations
Copyright © ASM International N.V. 2003 IJR 07/05/2007/30
®
ASM Proprietary and Confidential Information
SEG : Faceting and Geometry
2000
Front-end Operations
Copyright © ASM International n.v., July 07 - 14 - IJRASM
®
Elevated Source Drain and Silicide Contacts Selective Epitaxy
ESD Epi
SpacersGate
Courtesy of TI
2003Early work on Selective Epitaxy
Aimed at HBT’s and Elevated Source/Drain
Use of strain to enhance Transistor Performance
Front-End Operations
© 2005 ASM July 18, 2007Contains ASM Proprietary Information 25
20% SiGe Selective EpiIn Production Today at multiple Locations
• Mobility scaling increases Id,sat while not increasing dynamic power dissipation
• Parameters that affect strain and mobility:1. Recess depth2. Ge concentration for PMOS (C
for NMOS)3. Under etch, over fill, …
10-10
10-9
10-8
10-7
10-6
10-5
10-4
200 300 400 500 600 700
SiGe S/DReferenceI O
FF[A
/μm
] @ V
GS=0
.2V
ION
[μΑ/μm] @ VGS
=-0.8V
25%
1
Intel, IEDM 2003
22
2
,VC
LWI isatd μ=
2VfCP ii =
…and decreasing transistor power consumption
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 26
NMOS and PMOS Require different EpitaxialMaterials and Processes
• Epitaxial Stressors in Source/Drain• Selective SiGe for uniaxial compressive strain (pMOS)• Selective SiC for uniaxial tensile strain (nMOS)
• High levels of n-type & p-type in-situ doping
SiGeSiGe
CompressiveStrain
45nm SiC:P SiC:P
Tensile Strain
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 27
Improving NMOS Performance
Traditional ASM Patented Approach
Front-End Operations
© 2005 ASM July 18, 2007ASM and Soitec Proprietary Information 28
Early Investments in Epitaxial Technologies for Global Strain (sSOI) with Soitec
Front end Operations
Copyright © ASM International N.V. 2003 IJR 07/05/2007/22
®
ASM Proprietary and Confidential Information
Engineered SubstratesThe Ultimate Silicon Substrate
StrainedStrained Si on Si on insulatorinsulatorSiGeStrained Si
BOX
Si substrate
20% Ge bufferTDD = 1x105 cm-2
30% Ge bufferTDD = 8x104 cm-2
40% Ge bufferTDD = 9x104 cm-2
2006
www.soitec.com, accessed July 6, 2007
2003
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 29
PECVD Eagle® and Dragon®
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace RTPCorporate
R&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 30
ASM’s Positioning on Low-k Scaling and New Materials Introduction
Front-end Operations
Copyright © ASM International n.v., July 07 - 20 - IJRASM
®
Third Generation InterconnectThree Generations of Aurora
0
2
4
6
8
10
12
0 1 2 3 4 5
DesorptionAdsorption
C: CVD SiOC
Pore Radius Distribution
6 A, 6 - 7% 8 - 9 A, ≈30% 8 A, 15 - 20%
Aurora 2.7 Aurora ULK Aurora ELK
• Suite of Aurora® based Materials:• 3 generations with k-values from 3.0 down to 2.5• Conservative position on k-value scaling• The low-k material with the best integration properties
ASM Proprietary and Confidential Information
Front-end Operations
Copyright © ASM International N.V. 2002 IJR 07/06/2007/57
®
ASM BEOL RoadmapMainstream Approach
Design
ProcessTechnology Materials
• Established Aurora dielectric technology, scalable to k ≈ 2
• ASM’s BEOL Metal Technology targeted for 65 nm and extendable to 45 and 32 nm
• Concurrent and evolutionary improvements on dielectric, barrier materials, with design optimization will bring us to 45/32nm
20032002
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 31
Three Generations of Aurora® Low-kHigh Volume Production
• And one more is qualified…• Effective k value reductions are achieved by a succession of
• Bulk k –value scaling from 3.0 to 2.5• Integration scheme improvements
1.00
1.50
2.00
2.50
3.00
3.50
4.00
1999
2001
2003
2005
2007
2009
2011
2013
2015
2017
2019
2021
Year Production Start
Effe
ctiv
e k-
Valu
e
ITRS 1999ITRS 2001ITRS 2003ITRS 2005ASM HVM Tool Availability
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 32
ASM Choice for 32 nm: Aurora® ULK LD
2
2.5
3
3.5
ASM AuroraULK
PorousLow-k
MorePorousLow-k?
Bul
k k-
valu
e af
ter
Inte
grat
ion
After IntegrationAs Deposited
• Material with a low “as deposited” k-value may be more susceptible to damage
• Pore sealing strategies usually increase k-value to a certain depth
• This will become especially important at small spacing
0102030405060708090
100
30 50 70 90 110Distance (nm)
Ato
mic
con
cent
ratio
n (a
.u.) O
C
SiC(N)
Low-k
C
O
ASM choice: Robust integrationLow damage duringEtch and cleans
Front-End Operations
© 2005 ASM July 18, 2007Contains ASM Proprietary Information 33
Aurora® Low-k for DRAM
Al CuSiO Low-k
Low-k Ultra Low-kAl CuSiO Low-k
Low-k Ultra Low-kAl CuSiO Low-k
Low-k Ultra Low-k
ALCVD WNC, Rh, Ru; Superfill CVD CuHAR Contact
Low-k with low damage susceptibilityM1 Pitch
Eagle XP, Low cost chemistry and integration scheme
CostSolutionChallenge
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 34
Various Low-k PrecursorsCost and Thermal Stability
3MS
DMDMOS
OMCTS
TMCTS
StabilityHigher Lower
Prec
urso
r Cos
tLo
wH
igh
Best DRAM Low-k
Candidate
Front-End Operations
© 2005 ASM July 18, 2007Contains ASM Proprietary Information 35
PECVD: Advanced Patterning with Nano-Carbon Polymer (NCP™) Hard-Mask
Roadmap:• Increasing aspect ratio of mask
needed• Increasing number of
applications• More 3D structures, HAR• Smaller feature sizes
Process Flow• NCP/ARC deposition• Resist coat and develop• Etch NCP hardmask• Etch Oxide• Strip remaining resist
and hardmask
J.M.Park, IEDM 2002
SiO2
NCP (300nm)
193 nm ARC
Resist (200nm)
ResistThickness (nm)
Hard MaskThickness (nm)
500100015002000
Device NodeProduction
Year
LithographyProcessComparison
LithographyTechnology
0.14 0.12 0.09 0.07 0.05 0.03
2001 2003 2005 2007 2009
Single Layer ResistBi Layer Resist
Hard Mask Resist (Carbon Film)
KrF 248nm ArF 193nm F2 or EPL, EUVL
100200
300400500 2500
ResistThickness (nm)
Hard MaskThickness (nm)
500100015002000
Device NodeProduction
Year
LithographyProcessComparison
LithographyTechnology
0.14 0.12 0.09 0.07 0.05 0.03
2001 2003 2005 2007 2009
Single Layer ResistBi Layer Resist
Hard Mask Resist (Carbon Film)
KrF 248nm ArF 193nm F2 or EPL, EUVL
100200
300400500 2500
Soft Rigid
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 36
NCP™ HardmaskMany Applications in Memory Devices
Metal Contact DRAM
Metal Contact Flash
Storage Node Poly
Bit Line
Bit Line Contact
Self-aligned Contact
Gate Electrode
Isolation
Metal 1
HT - NCP
LT - NCPTR - NCP
Legend
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 37
Corporate R&D
Our Customers
Capacitor Products
PECVD Products
Epitaxy Products
Transistor Products
Vertical Furnace RTPCorporate
R&D
LP / RTCVD
AL / MOCVD
Epitaxy
Thermal Process
Plasma Process
A400/412
Levitor
Epsilon
Polygon/Pulsar
Eagle
Dragon
Proc
ess
Tech
nolo
gyPl
atfo
rms
Prod
uct P
latfo
rms
Prod
uct L
ines
Front-End Operations
© 2005 ASM July 18, 2007 38
The use of the 3rd Dimension will change the Industry
Improvements in speed, cost and
power consumption
3D Processor/Memory Stacking
Intel, ISS 2007; VLSI 2006(top), Samsung IEDM 2006 (Bottom)
3D in the Front-end of Line
Improvements in drive current and density
3D SystemIntegration
Improvements infunctionality
and formfactor
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 39
Summary and Conclusions (1 of 2)
• Transistor Products (Polygon® and Pulsar®)• High-k Production Technology. ASM has enabled the biggest
change in CMOS since 40 years with its Pulsar® ALCVD™ Reactor• Multiple metal gate options available to control VT• FinFET integration performed with IMEC
• Capacitor Products (Stellar™)• World’s first manufacturing worthy PEALD™ system• High-k dielectrics and metal electrodes for today’s and tomorrow’s
capacitor needs• PEALD™ reactors on two platforms for single film or integrated film
deposition• Vertical Furnace (A412™ and A400™)
• Many innovative new processes developed, continued interest to implement these in batch because of productivity
• HVM workhorse for all market segments: one system manages up to 60kwpm output!
Front-End Operations
© 2005 ASM July 18, 2007ASM Proprietary Information 40
Summary and Conclusions (2 of 2)
• RTP (Levitor®)• Superior throughput; Low COO RTP system• Unconditional temperature uniformity
• Epitaxy (Epsilon®)• PMOS strain engineering with selective Si:Ge in HVM at multiple
sites• NMOS strain engineering with selective Si:C in development with
multiple customers• Bi-axial strained sSOI in manufacturing at wafer supplier
• PECVD (Eagle® and Dragon®)• 3rd generation Aurora® low-k materials qualified for 45 and 32nm• Low damage susceptibility during Dual Damascene processing• Best, and lowest cost film for extending low-k to DRAM• Porous ELK (k<2.5) being investigated for integration• NCP™: Unique Nano Carbon Polymer hardmask for patterning
with (immersion) litho