1. Product profile
1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
1.3 Applications
1.4 Quick reference data
BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 — 22 February 2008 Product data sheet
175 °C rated Logic level compatibleQ101 compliant Very low on-state resistance
12 V and 24 V loads Automotive systemsGeneral purpose power switching Motors, lamps and solenoids
Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitID drain current VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 4- - 26 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 59 W
Static characteristicsRDSon drain-source on-state
resistanceVGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 12 and 13
- 34 40 mΩ
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
ID = 26 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
- - 36 mJ
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[3] Refer to application note AN10273 for further information.
Table 2. PinningPin Symbol Description Simplified outline Graphic symbol1 S source
SOT669 (LFPAK)
2 S source
3 S source
4 G gate
mb D mounting base; connected to drain
mb
1 2 3 4
S
D
G
mbb076
Table 3. Ordering informationType number Package
Name Description VersionBUK9Y40-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V
VDGR drain-gate voltage RGS = 20 kΩ - 55 V
VGS gate-source voltage -15 15 V
ID drain current Tmb = 100 °C; VGS = 5 V; see Figure 1 - 18 A
Tmb = 25 °C; VGS = 5 V; see Figure 1 and 4 - 26 A
IDM peak drain current Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 - 106 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 59 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
ID = 26 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
- 36 mJ
EDS(AL)R repetitive drain-source avalanche energy
see Figure 3 [1][2][3]
- - J
Source-drain diodeIS source current Tmb = 25 °C - 26 A
ISM peak source current tp ≤ 10 μs; pulsed; Tmb = 25 °C - 106 A
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 2 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
03nn93
0
10
20
30
0 50 100 150 200Tmb (°C)
ID
(A)
Tmb (°C)0 20015050 100
03na19
40
80
120
Pder(%)
0
VGS 5VPder =
Ptot
Ptot(25°C)× 100 %
03np80
tAV (ms)10−3 10110−2 10−1
10−1
1
10
102
IAV(A)
10−2
(1)
(2)
(3)
(1) Single pulse;T j = 25 °C.
(2) Single pulse;T j = 150 °C.
(3) Repetitive.
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 3 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
5. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03nn94
10-1
1
10
102
103
1 10 102VDS (V)
ID
(A)
DC
tp = 10 μs
100 μs
1 ms10 ms100 ms
Limit RDSon = VDS / ID
Tmb = 25 °C; IDM is single pulse
Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-mb) thermal resistance
from junction to mounting base
see Figure 5 - - 2.5 K/W
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration
03nn95
10-2
10-1
1
10
10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Zth (j-mb)
(K/W)
δ = 0.5
0.2
0.1
0.05
single shot
0.02
tpT
P
t
tpT
δ =
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 4 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
6. Characteristics
Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsV(BR)DSS drain-source
breakdown voltageID = 0.25 mA; VGS = 0 V; Tj = 25 °C
55 - - V
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
50 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11
1.1 1.5 2 V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11
- - 2.3 V
IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.02 1 μA
VDS = 55 V; VGS = 0 V; Tj = 175 °C
- - 500 μA
IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 °C - 2 100 nA
VDS = 0 V; VGS = -15 V; Tj = 25 °C
- 2 100 nA
RDSon drain-source on-state resistance
VGS = 5 V; ID = 15 A; Tj = 175 °C; see Figure 12 and 13
- - 84 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C - 32 36 mΩ
VGS = 4.5 V; ID = 15 A; Tj = 25 °C - - 45 mΩ
VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 12 and 13
- 34 40 mΩ
Source-drain diodeVSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C;
see Figure 16- 0.85 1.2 V
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = -10 V; VDS = 30 V; Tj = 25 °C
- 45 - ns
Qr recovered charge - 25 - nC
Dynamic characteristicsQG(tot) total gate charge ID = 15 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 14- 11 - nC
QGS gate-source charge - 2 - nC
QGD gate-drain charge - 5 - nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15
- 765 1020 pF
Coss output capacitance - 123 148 pF
Crss reverse transfer capacitance
- 71 97 pF
td(on) turn-on delay time VDS = 30 V; RL = 2.2 Ω; VGS = 5 V; RG(ext) = 10 Ω; Tj = 25 °C
- 17 - ns
tr rise time - 93 - ns
td(off) turn-off delay time - 35 - ns
tf fall time - 72 - ns
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 5 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of gate-source voltage
Fig 9. Forward transconductance as a function of drain current; typical values
VDS (V)0 1084 62
03np10
20
40
60
ID(A)
0
VGS (V) = 106.0
5.0
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.82.6
VGS (V)0 15105
03np09
30
40
50
RDSon(mΩ)
20
T j = 25 °C; tp = 300 s T j = 25 °C; ID = 15 A
03ng53
VGS (V)0 321
10−4
10−5
10−2
10−3
10−1
ID(A)
10−6
min typ max
ID (A)0 16124 8
03np07
20
15
25
30
gfs(S)
10
T j = 25 °C;VDS = VGS T j = 25 °C;VDS = 25V
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 6 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 11. Gate-source threshold voltage as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function of drain current; typical values
Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature
VGS (V)0 431 2
03np08
10
5
15
20
ID(A)
0
Tj = 25 °CTj = 175 °C
−60 1801200 60
03ng52
1.0
1.5
0.5
2.0
2.5
VGS(th)(V)
0
Tj (°C)
min
typ
max
VDS = 25V ID = 1 mA;VDS = VGS
ID (A)0 604020
03np11
30
60
90
RDSon(mΩ)
0
VGS (V) = 10
3.0 3.2 3.4 3.6 3.8 5.0
Tj (°C)−60 1801200 60
03nb25
0.8
1.6
2.4
a
0
T j = 25 °Ca =
RDSon
RDSon(25°C)
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 7 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
Fig 14. Gate-source voltage as a function of gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 16. Source current as a function of source-drain voltage; typical values
03np06
QG (nC)0 15105
2
3
1
4
5
VGS(V)
0
VDS = 14 V
VDS = 44 V
03np12
700
350
1050
1400
C(pF)
0
VDS (V)10−1 102101
Ciss
Coss
Crss
T j = 25 °C; ID = 15 A VGS = 0V ; f = 1 M H z
03np05
VSD (V)0 1.51.00.5
40
20
60
80
IS(A)
0
Tj = 175 °C
Tj = 25 °C
VGS = 0V
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 8 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
7. Package outline
Fig 17. Package outline SOT669 (LFPAK)
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT669 MO-235 04-10-1306-03-16
0 2.5 5 mm
scale
e
E1
b
c2
A2
A2 b cA eUNIT
DIMENSIONS (mm are the original dimensions)
mm 1.100.95
A3A1
0.150.00
1.201.01
0.500.35
b2
4.413.62
b3
2.22.0
b4
0.90.7
0.250.19
c2
0.300.24
4.103.80
6.25.8
H
1.30.8
L2
0.850.40
L
1.30.8
L1
8°0°
w yD(1)
5.04.8
E(1)
3.33.1
E1(1)D1
(1)
max
0.25 4.20 1.27 0.25 0.1
1 2 3 4
mountingbase
D1
c
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
E
b2
b3
b4
H D
L2
L1
A
Aw M
C
C
X
1/2 e
y C
θ
θ
(A )3
L
A
A1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 9 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesBUK9Y40-55B_3 20080222 Product data sheet - BUK9Y40-55B_2
Modifications: • The format of this data sheet has been redesigned to comply with the new identityguidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK9Y40-55B_2 20060411 Product data sheet - BUK9Y40_55B-01
BUK9Y40_55B-01 20040528 Product data sheet - -
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 10 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
9.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
9.3 DisclaimersGeneral — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nexperia.com
For sales office addresses, send an email to: [email protected]
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BUK9Y40-55B_3
Product data sheet Rev. 03 — 22 February 2008 11 of 12
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK9Y40-55BN-channel TrenchMOS logic level FET
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 12 Pinning information. . . . . . . . . . . . . . . . . . . . . . 23 Ordering information. . . . . . . . . . . . . . . . . . . . . 24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal characteristics . . . . . . . . . . . . . . . . . . 46 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 98 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 109 Legal information. . . . . . . . . . . . . . . . . . . . . . . 119.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 119.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1110 Contact information. . . . . . . . . . . . . . . . . . . . . 1111 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 22 February 2008