Bunch shorting scheme andscheme of extraction kicker in the ATF
DR using RF technology
Vladimir VogelKEK
April 25, 2005
C and X band 10nSec, (5.0 nSec)
Load
714 MHz
11.2 nSec
10 nSec RF11424MHz
714 MHz
Wave length (mm)0 5 10 15 20 25
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
Septum, or small voltage kicker
E=E0(1+0.015)
E=E0+(20Mev +/- 2%) 4, p-p
z=4mm,E=20Mev,= 10 nSec, f=450MHz E=1.5%
U=sin(C-band)+0.32*sin(X-band) = 90 degree
Wave length (mm)0 5 10 15 20 25 30 35 40 45 50 55
Am
pitu
de
-1.5
-1.0
-0.5
0.0
0.5
1.0
5= 20mm
Bunch length, = 4mm
714 MHz 714 MHz
Wave length (mm)0 5 10 15 20 25
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
C band
20 0
0
0
*cos( ) * ( ) 1UUaddN
U
N
Accelerate voltage
Accelerate phase
Harmonic number
Present Bunch length
Start
Length (mm)0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110
Eef
f (kV
)
0
40
80
120
160
200
240
280
320
360
400
C band, 8mm-4mm
100kV
0 kV
z ~ (Urf)^0.5
*2* *shE R P L =1 m, P = 4 kW, U = 167 kV
Single cell cavity, for 150kV, P=60 kW !
11ns
RF
377ns
10 MW X- band Klystronf = 4%
High group velocityC- band AC
Low reflection10 MW load
modulator, U=230kV, I=525A
e-
~10MW
377*2820=1.063ms
HV
RF
Low efficiency layout,Paver. = 600 kW
1ns
High group velocityX- band AC
10 MW C - band Klystronf = 8%
60 ns
15ns
11ns
HV
RF
377ns
10 MW KlystronC-bandf = 8%
3 db hybrid40MW
(377-15) nsdelay line
10 MW +/-90 degree phase shifterTsw. < 377ns
High group velocityC-band and X-band AC
Low reflection10 MW load
IGBT induction type modulator, U=230kV, I=350A
e-
10MW
~10MW
1 2 3 4
377*4=1508ns
HV
RF
High efficiency layout,Paver. = 68kW
1MW 1MW 1MW 1MW
1MW KlystronX-band f = 4%
Propagation of TE01 and TE02 modes through cooper circular waveguide,D120mm x L110m. Experimental results:
TE01 efficiency 97.10 %TE02 efficiency 90.63%
Loss:TE01 - 2.90% (theory 2.36% )TE02 – 8.96% (theory 8.62%)
S.Kazakov, A.Lunin, 2003
Passband of X-band travelling-wave mixed-mode window
X-band TW mixed-mode window
S.Kazakov
Passband of X-band pillbox window
X-band pillbox window
S.Kazakov
PPM#4A, F = 11424MHz, Pout ~ 30 MW
Time (Sec)-1.0e-8 -5.0e-9 0.0 5.0e-9 1.0e-8 1.5e-8 2.0e-8 2.5e-8 3.0e-8 3.5e-8 4.0e-8
Pin
, Pou
t (V
)
-0.4
-0.3
-0.2
-0.1
0.0
PinPout L2Pout L1
August 31, 2004
PPM#4a, U = 500kV, Tp= 30, 40, 100 nSec, Pin=-17dbm, -6dbm
Frequency (MHz) -11000MHz320 340 360 380 400 420 440 460 480 500 520 540
Pou
t L1,
L2
0
50
100
150
200
250
300
350
L1 (Pin -17dbm) 40 nSec L2 (Pin -17dbm) 40nSec L1 (Pin -6dbm) 30 nSec L2 (Pin -6dbm) 30nSec L1 (Pin -8dbm) 100hSec L1 (Pin -8dbm) 100nSec (L1+L2)/2
(mV
)
4000mm
U=230kV, I=350A, T=60nSec,Trise~60 nSec
ILC bunch spacing in DR = 11.2 (5.6) nS, DR circumference 9.52 (4.76) km
• Four Structure, L=0.5 m, Vgr~0.15, a/~ 0.3, E = 4*5 =20 Mev
• Four Klystrons, pulse length ~ 10 nSec, f = 8%, Pout ~10 MW
• Repetition rate (2.65/4) MHz, (with delay lines), Pav.=4*10kW
• IGBT modulator for 4 klystrons, 230kV, 350A, Pav=60kW
• DR one turn time ~ 34.7 uS, damp. ~ 25 mS, Ndr = 735*4, (LC X-band N = ~12 000, a/)