1 C3D04060E Rev. F, 08-2016

C3D04060ESilicon Carbide Schottky Diode

Z-Rec® Rectifier

Features

• 600-VoltSchottkyRectifier• OptimizedforPFCBoostDiodeApplication• ZeroReverseRecoveryCurrent• ZeroForwardRecoveryVoltage• High-FrequencyOperation• Temperature-IndependentSwitchingBehavior• ExtremelyFastSwitching• PositiveTemperatureCoefficientonVF

Benefits

• ReplaceBipolarwithUnipolarRectifiers• EssentiallyNoSwitchingLosses• HigherEfficiency• ReductionofHeatSinkRequirements• ParallelDevicesWithoutThermalRunaway

Applications

• SwitchModePowerSupplies(SMPS)• BoostdiodesinPFCorDC/DCstages• FreeWheelingDiodesinInverterstages• AC/DCconverters

Package

TO-252-2

Part Number Package Marking

C3D04060E TO-252-2 C3D04060

PIN1

PIN2CASE

VRRM = 600 V

IF (TC=135˚C) = 6 A

Qc =   10 nC

Maximum Ratings (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Value Unit Test Conditions Note

VRRM RepetitivePeakReverseVoltage 600 V

VRSM SurgePeakReverseVoltage 600 V

VDC DCBlockingVoltage 600 V

IF ContinuousForwardCurrent13.5

64

ATC=25˚CTC=135˚CTC=155˚C

Fig.3

IFRM RepetitivePeakForwardSurgeCurrent 1712 A TC=25˚C,tP=10ms,HalfSineWave

TC=110˚C,tP=10ms,HalfSineWave

IFSM Non-RepetitivePeakForwardSurgeCurrent 2519 A TC=25˚C,tp=10ms,HalfSineWave

TC=110˚C,tp=10ms,HalfSineWaveFig.8

IF,Max Non-RepetitivePeakForwardSurgeCurrent 220160 A TC=25˚C,tP=10µs,Pulse

TC=110˚C,tP=10µs,PulseFig.8

Ptot PowerDissipation 5222.5 W TC=25˚C

TC=110˚CFig.4

dV/dt DiodedV/dtruggedness 200 V/ns VR=0-600V

∫i2dt i2tvalue 3.11.8 A2s TC=25˚C,tP=10ms

TC=110˚C,tP=10ms

TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C

2 C3D04060E Rev. F, 08-2016

40

60

80

100

Re

ve

rse

Le

ak

ag

e C

urr

en

t, I

RR

(uA

)

TJ = 175 °C

TJ = 125 °C

TJ = 75 °C

0

20

0 200 400 600 800 1000 1200

Re

ve

rse

Le

ak

ag

e C

urr

en

t, I

Reverse Voltage, VR (V)

TJ = -55 °C

TJ = 25 °C

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VF ForwardVoltage 1.41.7

1.72.4 V IF=4ATJ=25°C

IF=4ATJ=175°CFig.1

IR ReverseCurrent 510

25100 μA VR=600VTJ=25°C

VR=600VTJ=175°CFig.2

QC TotalCapacitiveCharge 10 nCVR=400V,IF=4Adi/dt=500A/μsTJ=25°C

Fig.5

C TotalCapacitance23118.515

pFVR=0V,TJ=25°C,f=1MHzVR=200V,TJ=25˚C,f=1MHzVR=400V,TJ=25˚C,f=1MHz

Fig.6

EC CapacitanceStoredEnergy 1.4 μJ VR=400V Fig.7

Note: This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol Parameter Typ. Unit Note

RθJC ThermalResistancefromJunctiontoCase 2.9 °C/W Fig.9

Typical Performance

Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics

4

6

8

10

12

Fow

ard

Cu

rre

nt,

IF

(A)

TJ = -55 °C

TJ = 25 °C

TJ = 75 °C

TJ = 175 °C

TJ = 125 °C

0

2

4

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fow

ard

Cu

rre

nt,

I

Foward Voltage, VF (V)

I F (

A)

VF (V) VR (V)

I R (

mA)

3 C3D04060E Rev. F, 08-2016

20

25

30

35

40

45

50

I F(A

)

10% Duty20% Duty30% Duty50% Duty70% DutyDC

0

5

10

15

25 50 75 100 125 150 175

TC (°C)

Figure3.CurrentDerating Figure4.PowerDerating

20

30

40

50

60

PTOT(W

)0

10

20

25 50 75 100 125 150 175

TC (°C)

Typical Performance

6

8

10

12

14

16

Ca

pa

citi

ve

Ch

arg

e,

QC

(nC

)

Conditions:TJ = 25 °C

0

2

4

0 100 200 300 400 500 600 700

Ca

pa

citi

ve

Ch

arg

e,

Q

Reverse Voltage, VR (V)

100

150

200

250

Ca

pa

cita

nce

(p

F)

Conditions:TJ = 25 °CFtest = 1 MHzVtest = 25 mV

0

50

0 1 10 100 1000

Ca

pa

cita

nce

(p

F)

Reverse Voltage, VR (V)

I F(p

eak)

(A

)

TC ˚C TC ˚C

PTo

t (W

)C

(p

F)

VR (V)

QC (

nC

)

VR (V)

Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage

4 C3D04060E Rev. F, 08-2016

1.5

2

2.5

3

3.5

4

Ca

pa

cita

nce

Sto

red

En

erg

y, E

C( µµ µµ

J)

0

0.5

1

0 100 200 300 400 500 600 700

Ca

pa

cita

nce

Sto

red

En

erg

y, E

Reverse Voltage, VR (V)

Typical Performance

100

1,000

I FS

M(A

)

TJ_initial = 25 °CTJ_initial = 110 °C

1010E-6 100E-6 1E-3 10E-3

Time, tp (s)

Figure7.CapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrentversuspulseduration(sinusoidalwaveform)

tp (s)

I FS

M (

A)

VR (V)

E C(m

J)

Figure9.TransientThermalImpedance

100E-3

1

Ther

mal

Res

istan

ce (

o C/W

)

0.5

0.3

0.1

0.05

10E-31E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Time, tp (s)

0.02

0.01

SinglePulse

Ther

mal

Res

ista

nce

(˚

C/

W)

T (Sec)

5 C3D04060E Rev. F, 08-2016

Recommended Solder Pad Layout

Part Number Package Marking

C3D04060E TO-252-2 C3D04060

TO-252-2

Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering

SYMBOL MILLIMETERSMIN MAX

A 2.159 2.413A1 0 0.13b 0.64 0.89

b2 0.653 1.143b3 5.004 5.6c 0.457 0.61

c2 0.457 0.864D 5.867 6.248

D1 5.21 -E 6.35 7.341

E1 4.32 -e 4.58 BSC H 9.65 10.414L 1.106 1.78

L2 0.51 BSC L3 0.889 1.27L4 0.64 1.01θ 0° 8°

Tjb June 2015 MX+DI+PSI

Tjb June 2015 MX+DI+PSI

PackageTO-252-2

Package Dimensions

66 C3D04060E Rev. F, 08-2016

Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafficcontrolsystems.

Notes

• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i

RelatedLinks

Diode Model

VT RT

Diode Model CSD04060

Vf T = VT + If*RT

VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3)

Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C

VfT=VT+If*RT

VT=1.00+(TJ*-1.1*10-3)RT=0.069+(TJ*8.3*10-4)

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.:

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